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arXiv · 0705.4386

Temperature dependence of the impurity-induced resonant state in Zn-doped Bi_2Sr_2CaCu_2O$_{8+δ}$ by Scanning Tunneling Spectroscopy

H. Kambara·Y. Niimi·M. Ishikado·S. Uchida·Hiroshi Fukuyama
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Abstract

We report on the temperature dependence of the impurity-induced resonant state in Zn-doped Bi_2Sr_2CaCu_2O$_{8+δ}$ by scanning tunneling spectroscopy at 30 mK < T < 52 K. It is known that a Zn impurity induces a sharp resonant peak in tunnel spectrum at an energy close to the Fermi level. We observed that the resonant peak survives up to 52 K. The peak broadens with increasing temperature, which is explained by the thermal effect. This result provides information to understand the origin of the resonant peak.

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H. Kambara, Y. Niimi, M. Ishikado, S. Uchida, Hiroshi Fukuyama. 2007-08-02. Temperature dependence of the impurity-induced resonant state in Zn-doped Bi_2Sr_2CaCu_2O$_{8+δ}$ by Scanning Tunneling Spectroscopy. https://doi.org/10.1103/physrevb.76.052506

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