arXiv subjects

Y. P. Sun

Publications and source records attributed to Y. P. Sun.

At least 55 records · Page 3Linked to original sources

arXiv2015

Structure and Control of Charge Density Waves in Two-Dimensional 1T-TaS2

The layered transition metal dichalcogenides host a rich collection of charge density wave (CDW) phases in which both the conduction electrons and the atomic structure display translational symmetry breaking. Manipulating these complex states by purely electronic methods has been a long-sought scientific and technological goal. Here, we show how this can be achieved in 1T-TaS2 in the two-dimensional (2D) limit. We first demonstrate that the intrinsic properties of atomically-thin flakes are preserved by encapsulation with hexagonal boron nitride in inert atmosphere. We use this facile assembly method together with TEM and transport measurements to probe the nature of the 2D state and show that its conductance is dominated by discommensurations. The discommensuration structure can be precisely tuned in few-layer samples by an in-plane electric current, allowing continuous electrical control over the discommensuration-melting transition in 2D.

cond-mat.mes-hall↗

arXiv2015

Unusual ferromagnetic critical behavior owing to short-range antiferromagnetic correlations in antiperovskite Cu1-xNMn3+x(0.1<x<0.4)

For ferromagnets, varying from simple metals to strongly correlated oxides,the critical behaviors near the Curie temperature (TC) can be grouped into several universal classes. In this paper, we report an unusual critical behavior in manganese nitrides Cu1-xNMn3+x(0.1<x<0.4). Although the critical behavior below TC can be well described by mean field (MF) theory, robust critical fluctuations beyond the expectations of any universal classes are observed above TC in x=0.1. The critical fluctuations become weaker when x increases, and the MF-like critical behavior is finally restored at x=0.4. In addition, the paramagnetic susceptibility of all the samples deviates from the Curie-Weiss (CW) law just above TC. This deviation is gradually smeared as x increases. The short-range antiferromagnetic ordering above TC revealed by our electron spin resonance measurement explains both the unusual critical behavior and the breakdown of the CW law.

cond-mat.str-el↗

arXiv2015

Tunable negative thermal expansion related with the gradual evolution of antiferromagnetic ordering in antiperovskite manganese nitrides Ag1-xNMn3+x (0<x<0.6)

The thermal expansion and magnetic properties of antiperovskite manganese nitrides Ag1-xNMn3+x were reported. The substitution of Mn for Ag effectively broadens the temperature range of negative thermal expansion and drives it to cryogenic temperatures. As x increases, the paramagnetic (PM) to antiferromagnetic (AFM) phase transition temperature (TN) decreases. At x~0.2, the PM-AFM transition overlaps with the AFM to glass-like state transition. Above x=0.2, two new distinct magnetic transitions were observed: one occurs above room temperature from PM to ferromagnetic (FM), and the other one evolves at a lower temperature (T*) below which both AFM and FM orderings are involved. Further electron spin resonance measurement suggests that the broadened volume change near T* is closely related with the evolution of Γ5g AFM ordering.

cond-mat.str-el↗

arXiv2014

Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer

The electronic structure of WTe2 bulk and layers are investigated by using the first principles calculations. The perfect electron-hole (n-p) charge compensation and high carrier mobilities are found in WTe2 bulk, which may result in the large and non-saturating magnetoresistance (MR) observed very recently in the experiment [Ali et al., Nature 514, 205 (2014)]. The monolayer and bilayer of WTe2 preserve the semimetallic property, with the equal hole and electron carrier concentrations. Moreover, the very high carrier mobilities are also found in WTe2 monolayer, indicating that the WTe2 monolayer would have the same extraordinary MR effect as the bulk, which could have promising applications in nanostructured magnetic devices.

cond-mat.mes-hall↗

arXiv2014

Electron-doped phosphorene: A potential monolayer superconductor

We predict by first-principles calculations that the electron-doped phosphorene is a potential BCS-like superconductor. The stretching modes at the Brillouin-zone center are remarkably softened by the electron-doping, which results in the strong electron-phonon coupling. The superconductivity can be introduced by a doped electron density ($n_{2D}$) above $1.3 \times10^{14}$ cm$^{-2}$, and may exist over the liquid helium temperature when $n_{2D}>2.6 \times10^{14}$ cm$^{-2}$. The maximum critical temperature is predicted to be higher than 10 K. The superconductivity of phosphorene will significantly broaden the applications of this novel material.

cond-mat.supr-con↗

arXiv2014

Transport and Capacitance properties of Charge Density Wave in few layer 2H-TaS2 Devices

We carefully investigated the transport and capacitance properties of few layer charge density wave (CDW) 2H-TaS2 devices. The CDW transition temperature and the threshold voltage vary from device to device, which is attributed to the interlayer interaction and inhomogeneous local defects of these micro-devices based on few layer 2H-TaS2 flakes. Semiconductivity rather than metallic property of 2H-TaS2 devices was observed in our experiment at low temperature. The temperature dependence of the relative threshold voltage can be scaled to (1- T / Tr )^0.5+delta with delta=0.08 for the different measured devices with presence of the CDWs. The conductance-voltage and capacity-voltage measurements were performed simultaneously. At very low ac active voltage, we found that the hysteresis loops of these two measurements exactly match each other. Our results point out that the capacity-voltage measurements can also be used to define the threshold depinning voltage of the CDW, which give us a new method to investigate the CDWs.

cond-mat.mes-hall↗

arXiv2014

Coexistence of superconductivity and charge-density-wave domain in $1T$-Fe$_x$Ta$_{1-x}$SSe

A series of $1T$-Fe$_x$Ta$_{1-x}$SSe (0 $\leq x \leq$ 0.1) single crystals was fabricated via the chemical-vapor-transport (CVT) method and investigated by structure, transport, and magnetic measurements along with the density-functional-theory (DFT) calculations. The superconductivity (SC) in parent $1T$-TaSSe can be gradually suppressed by Fe-substitution ($x\leq0.03$), accompanied by the disappearance of charge-density-wave (CDW). DFT calculations show that the Fe-substitution effectively inhibits the CDW superstructure and thereby the CDW domains are destroyed. With further increasing $x$ ($x>0.03$), the disorder-induced scattering increases, and the system enters into the possible Anderson localization (AL) state. Our results prove the SC develops in the CDW phase and coexists with the CDW domain in $1T$-TaSSe system.

cond-mat.supr-con↗

arXiv2014

Enhanced thermoelectric performance of phosphorene by strain-induced band convergence

The newly emerging monolayer phosphorene was recently predicted to be a promising thermoelectric material. In this work, we propose to further enhance the thermoelectric performance of phosphorene by the strain-induced band convergence. The effect of the uniaxial strain on the thermoelectric properties of phosphorene was investigated by using the first-principles calculations combined with the semi-classical Boltzmann theory. When the zigzag-direction strain is applied, the Seebeck coefficient and electrical conductivity in zigzag direction can be greatly enhanced simultaneously at the critical strain of 5% where the band convergence is achieved. The largest ZT value of 1.65 at 300 K is then achieved conservatively estimated by using the bulk lattice thermal conductivity. When the armchair-direction strain of 8% is applied, the room-temperature ZT value can reach 2.12 in the armchair direction of phosphorene. Our results indicate that strain induced band convergence could be an effective method to enhance the thermoelectric performance of phosphorene.

cond-mat.mes-hall↗

arXiv2014

CuSe-based layered compound Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$ as a quasi-two-dimensional metal

We have investigated the physical properties of a new layered oxyselenide Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$, which crystallizes in an unusual intergrowth structure with Cu$_{2}$Se$_{2}$ and Bi$_{2}$YO$_{4}$ layers. Electric transport measurement indicates that Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$ behaves metallic. Thermal transport and Hall measurements show that the type of the carriers is hole-like and it may be a potential thermoelectric material at high temperatures. First principle calculations are in agreement with experimental results and show that Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$ is a quasi-2D metal. Further theoretical investigation suggests the ground states of the Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$-type can be tuned by designing the blocking layers, which will enrich the physical properties of these compounds.

cond-mat.mtrl-sci↗

arXiv2014

Large thermoelectric power factors in black phosphorus and phosphorene

The electronic properties of the layered black phosphorus (black-P) and its monolayer counterpart phosphorene are investigated by using the first-principles calculations based on the density functional theory (DFT). The room-temperature electronic transport coefficients are evaluated within the semi-classical Boltzmann theory. The electrical conductivity exhibits anisotropic behavior while the Seebeck coefficient is almost isotropic. At the optimal doping level and room temperature, bulk black-P and phosphorene are found to have large thermoelectric power factors of 118.4 and 138.9 μWcm-1K-2, respectively. The maximum dimensionless figure of merit (ZT value) of 0.22 can be achieved in bulk black-P by appropriate n-type doping, primarily limited by the reducible lattice thermal conductivity. For the phosphorene, the ZT value can reach 0.30 conservatively estimated by using the bulk lattice thermal conductivity. Our results suggest that both bulk black-P and phosphorene are potentially promising thermoelectric materials.

cond-mat.mtrl-sci↗

arXiv2014

Study of negative thermal expansion in the frustrated spinel ZnCr2Se4

The origin of negative thermal expansion (NTE) in the bond frustrated ZnCr2Se4 has been explored. ESR and FTIR document an ideal paramagnetic state above 100 K, below which ferromagnetic clusters coexist with the paramagnetic state down to TN. By fitting the inverse susceptibility above 100 K using a modified paramagnetic Curie-Weiss law, an exponentially changeable exchange integral J is deduced. In the case of the variable J, magnetic exchange and lattice elastic energy couple with each other effectively via magnetoelastic interaction in the ferromagnetic clusters, where NTE occurs at a loss of exchange energy while a gain of lattice elastic one.

cond-mat.str-el↗

arXiv2013

Prediction of superconductivity of $3d$ transition-metal based antiperovskites via magnetic phase diagram

We theoretically studied the electronic structure, magnetic properties, and lattice dynamics of a series of $3d$ transition-metal antiperovskite compounds AXM$_{3}$ by density function theory. Based on the Stoner criterion, we drew the magnetic phase diagram of carbon-based antiperovskites ACM$_{3}$. In the phase diagram, compounds with non-magnetic ground state but locating near the ferromagnetic boundary are suggested to yield sizeable electron-phonon coupling and behave superconductivity. To approve this deduction, we systematically calculated the phonon spectra and electron-phonon coupling of a series of Cr-based antiperovskites ACCr$_{3}$ and ANCr$_{3}$. The results show that AlCCr$_{3}$, GaCCr$_{3}$, and ZnNCr$_{3}$ could be moderate coupling BCS superconductors. The influence of spin fluctuation on superconductivity are discussed. Furthermore, other potential superconducting AXM$_{3}$ including some new Co-base and Fe-based antiperovskite superconductors are predicted from the magnetic phase diagram.

cond-mat.supr-con↗

arXiv2012

Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4

The correlation between colossal magnetocapacitance (CMC) and colossal magnetoresistance (CMR) in CdCr2S4 system has been revealed. The CMC is induced in polycrystalline Cd0.97In0.03Cr2S4 by annealing in cadmium vapor. At the same time, an insulator-metal transition and a concomitant CMR are observed near the Curie temperature. In contrast, after the same annealing treatment, CdCr2S4 displays a typical semiconductor behavior and does not show magnetic field dependent dielectric and electric transport properties. The simultaneous occurrence or absence of CMC and CMR effects implies that the CMC in the annealed Cd0.97In0.03Cr2S4 could be explained qualitatively by a combination of CMR and Maxwell-Wagner effect.

cond-mat.mtrl-sci↗

arXiv2012

Fe-doping induced superconductivity in charge-density-wave system 1T-TaS2

We report the interplay between charge-density-wave (CDW) and superconductivity of 1$T$-Fe$_{x}$Ta$_{1-x}$S$_{2}$ ($0\leq x \leq 0.05$) single crystals. The CDW order is gradually suppressed by Fe-doping, accompanied by the disappearance of pseudogap/Mott-gap as shown by the density functional theory (DFT) calculations. The superconducting state develops at low temperatures within the CDW state for the samples with the moderate doping levels. The superconductivity strongly depends on $x$ within a narrow range, and the maximum superconducting transition temperature is 2.8 K as $x=0.02$. We propose that the induced superconductivity and CDW phases are separated in real space. For high doping level ($x>0.04$), the Anderson localization (AL) state appears, resulting in a large increase of resistivity. We present a complete electronic phase diagram of 1$T$-Fe$_{x}$Ta$_{1-x}$S$_{2}$ system that shows a dome-like $T_{c}(x)$.

cond-mat.supr-con↗

arXiv2012

Suppression of superconductivity in layered Bi4O4S3 by Ag doping

We report X-ray diffraction, magnetization and transport measurements for polycrystalline samples of the new layered superconductor Bi4-xAgxO4S3 (0 0.10. Accordingly, the resistivity changes from a metallic behavior for x<0.1 to a semiconductor-like behavior for x>0.1. The analysis of Seebeck coefficient shows there are two types of electron-like carriers dominate at different temperature regions, indicative of a multiband effect responsible for the transport properties. The suppression of superconductivity and the increased resistivity can be attributed to a shift of the Fermi level to the lower-energy side upon doping, which reduces the density of states at EF. Further, our result indicates the superconductivity in the parent Bi4O4S3 is intrinsic and the dopant Ag prefers to enter the BiS2 layers, which may essentially modify the electronic structure.

cond-mat.supr-con↗

arXiv2012

Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3

Polycrystalline sample of the new layered superconductor Bi4O4S3 is successfully synthesized by solid-state reaction method by using Bi, S and Bi2O3 powders with one step reaction. The superconducting transition temperature (Tconset=4.5 K), the zero resistance transition temperature (Tc0=4.07 K) and the diamagnetic transition temperature (4.02 K at H=10 Oe) were confirmed by electrical transport and magnetic measurements. Also, our results indicate a typical type II-superconductor behavior. In addition, a large thermoelectric effect was observed with a dimensionless thermoelectric figure of merit (ZT) of about 0.03 at 300K, indicating Bi4O4S3 can be a potential thermoelectric material.

cond-mat.supr-con↗

arXiv2010

Vortex Phase Diagram of Layered Superconductor Cu0.03TaS2 for H || c

The magnetization and anisotropic electrical transport properties have been measured in high quality Cu0.03TaS2 single crystal. A pronounced peak effect has been observed, indicating that the high quality and homogeneity are vital to peak effect. A kink has been observed in the magnetic field H dependence of the in-plane resistivity ρab for H || c, which corresponds to a transition from activated to diffusive behavior of vortex liquid phase. In the diffusive regime of the vortex liquid phase, the in-plane resistivity ρab shows ρab $\propto$ H0.3 relation, which does not follow the Bardeen-Stephen law for free flux flow. Finally, a simplified vortex phase diagram of Cu0.03TaS2 for H || c is given.

cond-mat.supr-con↗

arXiv2009

Superconductivity and single crystal growth of Ni0:05TaS2

Superconductivity was discovered in a Ni0:05TaS2 single crystal. A Ni0:05TaS2 single crystal was successfully grown via the NaCl/KCl flux method. The obtained lattice constant c of Ni0:05TaS2 is 1.1999 nm, which is significantly smaller than that of 2H-TaS2 (1.208 nm). Electrical resistivity and magnetization measurements reveal that the superconductivity transition temperature of Ni0:05TaS2 is enhanced from 0.8 K (2H-TaS2) to 3.9 K. The charge-density-wave transition of the matrix compound 2H-TaS2 is suppressed in Ni0:05TaS2. The success of Ni0:05TaS2 single crystal growth via a NaCl/KCl flux demonstrates that NaCl/KCl flux method will be a feasible method for single crystal growth of the layered transition metal dichalcogenides.

cond-mat.supr-con↗