arXiv subjects

Y. Zhu

Publications and source records attributed to Y. Zhu.

103 records · Page 6Linked to original sources

arXiv2008

Diverging Giant Magnetoresistance in the Limit of Infinitely Conducting Spacer

The relevance of pair-breaking by exchange and dipolar fields, and by injected spins in a low carrier density cuprate Y$_{1-x}$Pr$_x$Ba$_2$Cu$_3$O$_7$ sandwiched between two ferromagnetic La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ layers is examined. At low external field ($H_{ext}$), the system shows a giant magnetoresistance(MR), which diverges deep in the superconducting state. We establish a distinct dipolar contribution to MR near the switching field(H$_c$) of the magnetic layers. At H$_{ext} \gg$ H$_c$, a large positive MR, resulting primarily from the motion of Josephson vortices and pair breaking by the in-plane field, is seen.

cond-mat.supr-con↗

arXiv2008

Novel electronic structure induced by a highly strained oxide interface with incommensurate crystal fields

The misfit oxide, Bi$_{2}$Ba$_{1.3}$K$_{0.6}$Co$_{2.1}$O$_{y}$, made of alternating rocksalt-structured [BiO/BaO] layers and hexagonal CoO$_{2}$ layers, was studied by angle-resolved photoemission spectroscopy. Detailed electronic structure of such a highly strained oxide interfaces is revealed for the first time. We found that under the two incommensurate crystal fields, electrons are confined within individual sides of the interface, and scattered by umklapp scattering of the crystal field from the other side. In addition, the high strain on the rocksalt layer raises its chemical potential and induces large charge transfer to the CoO$_{2}$ layer. Furthermore, a novel interface effects, the interfacial enhancement of electron-phonon interactions, is discovered. Our findings of these electronic properties lay a foundation for designing future functional oxide interfaces.

cond-mat.str-el↗

arXiv2007

Nanoscale grains, high irreversibility field, and large critical current density as a function of high energy ball milling time in C-doped magnesium diboride

Magnesium diboride (MgB2) powder was mechanically alloyed by high energy ball milling with C to a composition of Mg(B0.95C0.05)2 and then sintered at 1000 C in a hot isostatic press. Milling times varied from 1 minute to 3000 minutes. Full C incorporation required only 30-60 min of milling. Grain size of sintered samples decreased with increased milling time to less than 30 nm for 20-50 hrs of milling. Milling had a weak detrimental effect on connectivity. Strong irreversibility field (H*) increase (from 13.3 T to 17.2 T at 4.2 K) due to increased milling time was observed and correlated linearly with inverse grain size (1/d). As a result, high field Jc benefited greatly from lengthy powder milling. Jc(8 T, 4.2 K) peaked at > 80,000 A/cm2 with 1200 min of milling compared with only ~ 26,000 A/cm2 for 60 min of milling. This non-compositional performance increase is attributed to grain refinement of the unsintered powder by milling, and to the probable suppression of grain growth by milling-induced MgO nano-dispersions.

cond-mat.supr-con↗

arXiv2007

Effect of Number of Walls on Plasmon Behavior in Carbon Nanotubes

We investigate the physical parameters controlling the low energy screening in carbon nanotubes via electron energy loss spectroscopy and inelastic x-ray scattering. Two plasmon-like features are observed, one near 9 eV (the so-called pi plasmon) and one near 20 eV (the so-called pi+sigma plasmon). At large nanotube diameters, the pi+sigma plasmon energies are found to depend exclusively on the number of walls and not on the radius or chiral vector. The observed shift indicates a change in the strength of the screening and in the effective interaction at inter-atomic distances, and thus this result suggests a mechanism for tuning the properties of the nanotube.

cond-mat.other↗

arXiv2005

Electron energy-loss spectroscopy study of electron-doping in MgB$_2$

The electronic structure of electron-doped polycrystalline Mg$_{1-x}$Al$_{x}$(B$_{1-y}$C$_{y}$)$_2$ was examined by electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) and first-principle electronic structure calculations. We found significant changes in the boron $K$ edge fine structure, suggesting the two bands of the B $K$ edge, the $σ$ and the $π$ band are being simultaneously filled as the electron doping concentration of Mg$_{1-x}$Al$_{x}$(B$_{1-y}$C$_{y}$)$_2$ was increased. Our density-functional theory calculations confirm the filling of the $σ$ band states close to the Fermi level, which is believed to cause the loss of superconductivity in highly doped MgB$_2$, since the electron-phonon coupling of these states is thought to be responsible for the high superconducting transition temperature. Our results do not show significant differences in the electronic structure for electron doping on either the Mg or the B site, although many superconducting properties, such as $T_c$ or H$_{c_2}$ differ considerably for C- and Al- doped \MB. This behavior can not be satisfactorily explained by band filling alone, and effects such as interband scattering are considered.

cond-mat.supr-con↗

arXiv2005

Enhanced flux pinning in YBa2Cu3O7-d films by nano-scaled substrate surface roughness

Nano-scaled substrate surface roughness is shown to strongly influence the critical current density Jc in YBCO films made by pulse-laser-deposition on the crystalline LaAlO3 substrates consisting of two separate twin-free and twin-rich regions. The nano-scaled corrugated surface was created in the twin-rich region during the deposition process. Using magneto-optical imaging techniques coupled with optical and atomic force microscopy, we observed an enhanced flux pinning in the YBCO films in the twin-rich region, resulted in \~30% increase in Jc, which was unambiguously confirmed by the direct transport measurement.

cond-mat.supr-con↗

arXiv2004

Defect Structure of the High-Dielectric-Constant Perovskite Cacu3ti4o12

Using transmission electron microscopy (TEM) we studied CaCu3Ti4O12, an intriguing material that exhibits a huge dielectric response, up to kilohertz frequencies, over a wide range of temperature. Neither in single crystals, nor in polycrystalline samples, including sintered bulk- and thin-films, did we observe the twin domains suggested in the literature. Nevertheless, in the single crystals, we saw a very high density of dislocations with a Burger vector of [110], as well as regions with cation disorder and planar defects with a displacement vector 1/4[110]. In the polycrystalline samples, we observed many grain boundaries with oxygen deficiency, in comparison with the grain interior. The defect-related structural disorders and inhomogeneity, serving as an internal barrier layer capacitance (IBLC) in a semiconducting matrix, might explain the very large dielectric response of the material. Our TEM study of the structure defects in CaCu3Ti4O12 supports a recently proposed morphological model with percolating conducting regions and blocking regions.

cond-mat.mtrl-sci↗

arXiv2004

Aluminum Oxide Layers as Possible Components for Layered Tunnel Barriers

We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures at temperatures up to 550 deg C. Post-annealing at temperatures above 300 deg C results in a significant decrease of the tunneling conductance of thermally-grown barriers, while plasma-grown barriers start to change only at annealing temperatures above 450 deg C. Fitting the experimental I-V curves of the junctions using the results of the microscopic theory of direct tunneling shows that the annealing of thermally-grown oxides at temperatures above 300 deg C results in a substantial increase of their average tunnel barriers height, from ~1.8 eV to ~2.45 eV, versus the practically unchanged height of ~2.0 eV for plasma-grown layers. This difference, together with high endurance of annealed barriers under electric stress (breakdown field above 10 MV/cm) may enable all-AlOx and SiO2/AlOx layered "crested" barriers for advanced floating-gate memory applications.

cond-mat.mtrl-sci↗

arXiv2003

Nanoscale-SiC doping for enhancing Jc and Hc2 in the Superconducting MgB2

The effect of nanoscale-SiC doping of MgB2 was investigated using transport and magnetic measurements. It was found that there is a clear correlation between the critical temperature Tc, the resistivity r, the residual resistivity ratio, RRR = R(300K)/R(40K), the irreversibility field H* and the alloying state in the samples. SiC-doping introduced many nano-scale precipitates, provoking an increase of r(40K) from 1 mW-cm (RRR = 15) for the clean limit sample to 300 mW-cm (RRR = 1.75) for the SiC-doped sample, leading to significant enhancement of Hc2 and H* with only minor effect on Tc. EELS analysis revealed a number of nano-scale impurity phases: Mg2Si, MgO, MgB4, BOx, SixByOz, BC and unreacted SiC in the doped sample. TEM study showed an extensive domain structure of 2-4nm domains induced by SiC doping. The Jc for the 10% nano-SiC doped sample increased substantially at all fields and temperatures compared to the undoped samples, due to the strong increase in Hc2 and H* produced by SiC doping.

cond-mat.supr-con↗

arXiv2003

Temperature Dependence of Resistivity of $Sr_2CoMoO_{6-δ}$ Films

We investigate the temperature dependence of the resistivity and magnetoresistance of a polycrystalline $Sr_2CoMoO_{6-δ}$ film deposited on (100)-$SrTiO_3$ substrate prepared by the pulsed laser deposition method. X-ray diffraction, Raman and magnetoresistance results demonstrate clearly the coexistence of a ferromagnetic metallic and an antiferromagnetic (or paramagnetic) insulating domain. Percolative transition between these two phases as the temperature varies, which is believed to induce a metal-insulator transition at around $T_C$, has been directly observed in our measurements of the temperature dependence of the sample resistivity. Thus we have provided new direct evidence that a phase separation scenario also exists in the ordered double-perovskite structure materials.

cond-mat.mtrl-sci↗

arXiv2003

Experimental probing of the anisotropy of the empty p states near the Fermi level in MgB2

We have studied the Boron K-edge in the superconductor MgB2 by electron energy loss spectroscopy (EELS) and experimentally resolved the empty p states at the Fermi level that have previously been observed within an energy window of 0.8eV by soft x-ray absorption spectroscopy. Using angular resolved EELS, we find that these states at the immediate edge onset have pxy character in agreement with predictions from first-principle electronic structure calculations.

cond-mat.supr-con↗

arXiv2002

Low temperature superlattice in monoclinic PZT

TEM has shown that the strongly piezoelectric material Pb(Zr0.52Ti0.48)O3 separates into two phases at low temperatures. The majority phase is the monoclinic phase previously found by x-ray diffraction. The minority phase, with a nanoscale coherence length, is a slightly distorted variant of the first resulting from the anti-phase rotation of the oxygen octahedra about [111]. This work clears up a recent controversy about the origin of superlattice peaks in these materials, and supports recent theoretical results predicting the coexistence of ferroelectric and rotational instabilities.

cond-mat.mtrl-sci↗

arXiv2001

Microstructure and Structural Defects in MgB2 Superconductor

We report a detailed study of the microstructure and defects in sintered polycrystalline MgB2. Both TEM and x-ray data reveal that MgO is the major second-phase in our bulk samples. Although MgB2 and MgO have different crystal symmetries, being P6/mmm and Fm-3m, respectively, their stacking sequence of Mg and B (or O) and lattice spacings in certain crystallographic orientations are very similar. The size of MgO varies from 10~500nm, and its mismatch with the MgB2 matrix can be a source for dislocations. Dislocations in MgB2 often have a Burgers vector of <100>. 1/3<1-10> and 1/3<210> partial dislocations and their associated stacking faults were also observed. Since both dislocations and stacking faults are located in the (001) basal plane, flux pinning anisotropy is expected. Diffuse scattering analysis suggests that the correlation length along the c-axis for defect-free basal planes is about 50nm. (001) twist grain-boundaries, formed by rotations along the c-axis, are major grain boundaries in MgB2 as a result of the out-of-plane weak bonding between Mg and B atoms. An excess of Mg was observed in some grain boundaries. High-resolution nano-probe EELS reveals that there is a difference in near edge structure of the boron K-edge acquired from grain boundaries and grain interiors. The change at the edge threshold may be suggestive of variation of the hole concentration that would significantly alter boundary superconductivity.

cond-mat.supr-con↗