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Yang Cui

Publications and source records attributed to Yang Cui.

22 records · Page 2Linked to original sources

Petahertz Spintronics

The enigmatic coupling between electronic and magnetic phenomena was one of the riddles propelling the development of modern electromagnetism. Today, the fully controlled electric field evolution of ultrashort laser pulses permits the direct and ultrafast control of electronic properties of matter and is the cornerstone of light-wave electronics. In sharp contrast, because there is no first order interaction between light and spins, the magnetic properties of matter can only be affected indirectly on the much slower tens-of-femtosecond timescale in a sequence of optical excitation followed by the rearrangement of the spin structure. Here we record an orders of magnitude faster magnetic switching with sub-femtosecond response time by initiating optical excitations with near-single-cycle laser pulses in a ferromagnetic layer stack. The unfolding dynamics are tracked in real-time by a novel attosecond time-resolved magnetic circular dichroism (atto-MCD) detection scheme revealing optically induced spin and orbital momentum transfer (OISTR) in synchrony with light field driven charge relocation. In tandem with ab-initio quantum dynamical modelling, we show how this mechanism provides simultaneous control over electronic and magnetic properties that are at the heart of spintronic functionality. This first incarnation of attomagnetism observes light field coherent control of spin-dynamics in the initial non-dissipative temporal regime and paves the way towards coherent spintronic applications with Petahertz clock rates.

physics.app-ph↗

Realization of Room-Temperature Phonon-limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample quality enables us to quantitatively extract the mobility components limited by Coulomb impurities, intrinsic and surface optical phonons, and study their scaling with temperature, carrier density and dielectric constant. The excellent agreement between our theoretical analysis and experimental data demonstrates unambiguously that room-temperature phonon-limited transport is achieved in monolayer MoS2, which is a necessary factor for electronic device applications.

cond-mat.mtrl-sci↗

High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics

The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm2/Vs (337 cm2/Vs) is reached at room temperature (low temperature) for monolayer WS2. A theoretical model for electron transport is also developed.

cond-mat.mtrl-sci↗