arXiv subjects

Yang Lv

Publications and source records attributed to Yang Lv.

34 records · Page 2Linked to original sources

arXiv2024

On Error Correction for Nonvolatile Processing-In-Memory

Processing in memory (PiM) represents a promising computing paradigm to enhance performance of numerous data-intensive applications. Variants performing computing directly in emerging nonvolatile memories can deliver very high energy efficiency. PiM architectures directly inherit the vulnerabilities of the underlying memory substrates, but they also are subject to errors due to the computation in place. Numerous well-established error correcting codes (ECC) for memory exist, and are also considered in the PiM context, however, they typically ignore errors that occur throughout computation. In this paper we revisit the error correction design space for nonvolatile PiM, considering both storage/memory and computation-induced errors, surveying several self-checking and homomorphic approaches. We propose several solutions and analyze their complex performance-area-coverage trade-off, using three representative nonvolatile PiM technologies. All of these solutions guarantee single error correction for both, bulk bitwise computations and ordinary memory/storage errors.

cs.ET↗

arXiv2023

Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn

Topological semimetal materials have become a research hotspot due to their intrinsic strong spin-orbit coupling which leads to large charge-to-spin conversion efficiency and novel transport behaviors. In this work, we have observed a bilinear magnetoelectric resistance (BMER) of up to 0.1 nm2A-1Oe-1 in a singlelayer of sputtered semimetal Pt3Sn at room temperature. Different from previous observations, the value of BMER in sputtered Pt3Sn does not change out-of-plane due to the polycrystalline nature of Pt3Sn. The observation of BMER provides strong evidence of the existence of spin-momentum locking in the sputtered polycrystalline Pt3Sn. By adding an adjacent CoFeB magnetic layer, the BMER value of this bilayer system is doubled compared to the single Pt3Sn layer. This work broadens the material system in BMER study, which paves the way for the characterization of topological states and applications for spin memory and logic devices.

cond-mat.mtrl-sci↗

arXiv2023

Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal

Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk states and topological surface states with intriguing transport properties for spintronics. Here, we fabricate highly-ordered metallic Pt3Sn and Pt3SnxFe1-x thin films via sputtering technology. Systematic angular dependence (both in-plane and out-of-plane) study of magnetoresistance presents surprisingly robust quadratic and linear negative longitudinal magnetoresistance features for Pt3Sn and Pt3SnxFe1-x, respectively. We attribute the anomalous negative longitudinal magnetoresistance to the type-II Dirac semimetal phase (pristine Pt3Sn) and/or the formation of tunable Weyl semimetal phases through symmetry breaking processes, such as magnetic-atom doping, as confirmed by first-principles calculations. Furthermore, Pt3Sn and Pt3SnxFe1-x show the promising performance for facilitating the development of advanced spin-orbit torque devices. These results extend our understanding of chiral anomaly of topological semimetals and can pave the way for exploring novel topological materials for spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Observation of the unidirectional magnetoresistance in antiferromagnetic insulator Fe2O3/Pt bilayers

Unidirectional magnetoresistance (UMR) has been observed in a variety of stacks with ferromagnetic/spin Hall material bilayer structures. In this work, we reported UMR in antiferromagnetic insulator Fe2O3/Pt structure. The UMR has a negative value, which is related to interfacial Rashba coupling and band splitting. Thickness-dependent measurement reveals a potential competition between UMR and the unidirectional spin Hall magnetoresistance (USMR). This work revealed the existence of UMR in antiferromagnetic insulators/heavy metal bilayers and broadens the way for the application of antiferromagnet-based spintronic devices.

cond-mat.mtrl-sci↗

arXiv2022

Bone tumor suppression in rabbits by hyperthermia below the clinical safety limit using aligned magnetic bone cement

Demonstrating highly efficient alternating current (AC) magnetic field heating of nanoparticles in physiological environments under clinically safe field parameters has remained a great challenge, hindering clinical applications of magnetic hyperthermia. In this work, we report exceptionally high loss power of magnetic bone cement under clinical safety limit of AC field parameters, incorporating DC field-aligned soft magnetic Zn0.3Fe2.7O4 nanoparticles with low concentration. Under an AC field of 4 kA/m at 430 kHz, the aligned bone cement with 0.2 wt% nanoparticles achieved a temperature increase of 30 C in 180 s. This amounts to a specific loss power value of 327 W/gmetal and an intrinsic loss power of 47 nHm^2/kg, which is enhanced by 50-fold compared to randomly oriented samples. The high-performance magnetic bone cement allows for the demonstration of effective hyperthermia suppression of tumor growth in the bone marrow cavity of New Zealand White Rabbits subjecting to rapid cooling due to blood circulation, and significant enhancement of survival rate.

physics.med-ph↗

arXiv2021

Bipolar electric field switching of perpendicular magnetic tunnel junctions through voltage controlled exchange coupling

Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier of ferromagnetic layer via electric field effect and efficiently switches p-MTJs only with a unipolar behavior. Here we demonstrate a bipolar electric field effect switching of 100-nm p-MTJs with a synthetic antiferromagnetic free layer through voltage-controlled exchange coupling (VCEC). The switching current density, ~1.1x10^5 A/cm^2, is one order of magnitude lower than that of the best-reported spin-transfer torque devices. Theoretical results suggest that electric field induces a ferromagnetic-antiferromagnetic exchange coupling transition of the synthetic antiferromagnetic free layer and generates a field-like interlayer exchange coupling torque, which cause the bidirectional magnetization switching of p-MTJs. A preliminary benchmarking simulation estimates that VCEC dissipates an order of magnitude lower writing energy compared to spin-transfer torque at the 15-nm technology node. These results could eliminate the major obstacle in the development of spin memory devices beyond their embedded applications.

physics.app-ph↗

arXiv2019

Neighborhood-Enhanced and Time-Aware Model for Session-based Recommendation

Session based recommendation has become one of the research hotpots in the field of recommendation systems due to its highly practical value.Previous deep learning methods mostly focus on the sequential characteristics within the current session,and neglect the context similarity and temporal similarity between sessions which contain abundant collaborative information.In this paper,we propose a novel neural networks framework,namely Neighborhood Enhanced and Time Aware Recommendation Machine(NETA) for session based recommendation. Firstly,we introduce an efficient neighborhood retrieve mechanism to find out similar sessions which includes collaborative information.Then we design a guided attention with time-aware mechanism to extract collaborative representation from neighborhood sessions.Especially,temporal recency between sessions is considered separately.Finally, we design a simple co-attention mechanism to determine the importance of complementary collaborative representation when predicting the next item.Extensive experiments conducted on two real-world datasets demonstrate the effectiveness of our proposed model.

cs.IR↗

arXiv2019

Experimental Demonstration of Probabilistic Spin Logic by Magnetic Tunnel Junctions

The recently proposed probabilistic spin logic presents promising solutions to novel computing applications. Multiple cases of implementations, including invertible logic gate, have been studied numerically by simulations. Here we report an experimental demonstration of a magnetic tunnel junction-based hardware implementation of probabilistic spin logic.

cs.ET↗

arXiv2018

Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures

Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque switching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator device configurations studied so far in this context, namely ferromagnetic metal/topological insulator bilayers and magnetically doped topological insulators, suffer from current shunting by the metallic layer and low Curie temperature, respectively. Here, we report large USRMR in a new material category - magnetic insulator/topological insulator bi-layered heterostructures. Such structures exhibit USRMR that is about an order of magnitude larger than the highest values reported so far in all-metal Ta/Co bilayers. We also demonstrate current-induced magnetization switching aided by an Oersted field, and electrical read out by the USRMR, as a prototype memory device.

cond-mat.mes-hall↗

arXiv2018

L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions

Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an antiferromagnetic layer to these MTJs was recently predicted to facilitate ultra-fast magnetization switching. Here, we report a demonstration of a bulk perpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a (001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ru spacer. The L10 FePd P-SAFM structure shows a large bulk PMA (~10.2 Merg/cc) and strong antiferromagnetic coupling (~2.60 erg/cm2). Full perpendicular magnetic tunnel junctions (P-MTJs) with a L10 FePd P-SAFM layer are then fabricated. Tunneling magnetoresistance ratios of up to ~25% (~60%) are observed at room temperature (5K) after post-annealing at 350 C. Exhibiting high thermal stabilities and large Ku, the bulk P-MTJs with an L10 FePd P-SAFM layer could pave a way for next-generation ultrahigh-density and ultra-low-energy spintronic applications.

cond-mat.mtrl-sci↗

arXiv2018

LEARN: Learned Experts' Assessment-based Reconstruction Network for Sparse-data CT

Compressive sensing (CS) has proved effective for tomographic reconstruction from sparsely collected data or under-sampled measurements, which are practically important for few-view CT, tomosynthesis, interior tomography, and so on. To perform sparse-data CT, the iterative reconstruction commonly use regularizers in the CS framework. Currently, how to choose the parameters adaptively for regularization is a major open problem. In this paper, inspired by the idea of machine learning especially deep learning, we unfold a state-of-the-art "fields of experts" based iterative reconstruction scheme up to a number of iterations for data-driven training, construct a Learned Experts' Assessment-based Reconstruction Network ("LEARN") for sparse-data CT, and demonstrate the feasibility and merits of our LEARN network. The experimental results with our proposed LEARN network produces a competitive performance with the well-known Mayo Clinic Low-Dose Challenge Dataset relative to several state-of-the-art methods, in terms of artifact reduction, feature preservation, and computational speed. This is consistent to our insight that because all the regularization terms and parameters used in the iterative reconstruction are now learned from the training data, our LEARN network utilizes application-oriented knowledge more effectively and recovers underlying images more favorably than competing algorithms. Also, the number of layers in the LEARN network is only 12, reducing the computational complexity of typical iterative algorithms by orders of magnitude.

physics.med-ph↗

arXiv2017

Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material

The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x) thin films in BixSe(1-x)/CoFeB heterostructures by using a dc planar Hall method. Remarkably, the spin Hall angle (SHA) was found to be as large as 18.83, which is the largest ever reported at room temperature (RT). Moreover, switching of a perpendicular CoFeB multilayer using SOT from the BixSe(1-x) has been observed with the lowest-ever switching current density reported in a bilayer system: 2.3 * 105 A/cm2 at RT. The giant SHA, smooth surface, ease of growth of the films on silicon substrate, successful growth and switching of a perpendicular CoFeB multilayer on BixSe(1-x) film opens a path for use of BixSe(1-x) topological insulator (TI) material as a spin-current generator in SOT-based memory and logic devices.

cond-mat.mes-hall↗

arXiv2017

Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures

The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments at room temperature. However, memory or logic spin devices based upon such switching require a non-optimal three terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two terminal device geometry is now possible by exploiting the recent discovery of a unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and (at low temperature) in magnetically doped topological insulator heterostructures. We report the observation of unidirectional spin Hall magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure-of-merit (magnetoresistance per current density per total resistance) that is comparable to the highest reported values in all-metal Ta/Co bilayers.

cond-mat.mes-hall↗

arXiv2014

Room Temperature Spin Pumping in Topological Insulator Bi2Se3

Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling and the existence of spin-textured topological surface states which could be potentially exploited for spintronics. Here, we investigate spin pumping from a metallic ferromagnet (CoFeB) into a 3D topological insulator (Bi2Se3) and demonstrate successful spin injection from CoFeB into Bi2Se3 and the direct detection of the electromotive force generated by the inverse spin Hal effect (ISHE) at room temperature. The spin pumping, driven by the magnetization dynamics of the metallic ferromagnet, introduces a spin current into the topological insulator layer, resulting in a broadening of the ferromagnetic resonance (FMR) linewidth. We find that the FMR linewidth more than quintuples, the spin mixing conductance can be as large as 3.4*10^20m^-2 and the spin Hall angle can be as large as 0.23 in the Bi2Se3 layer.

cond-mat.mes-hall↗

arXiv2012

Spin polarization separation of reflected light at Brewster angle

A novel spin polarization separation of reflected light is observed, when a linearly polarized Gaussian beam impinges on an air-glass interface at Brewster angle. In the far-field zone, spins of photons are oppositely polarized in two regions along the direction perpendicular to incident plane. Spatial scale of this polarization is related to optical properties of dielectric and can be controlled by experimental configuration. We believe that this study benefits the manipulation of spins of photons and the development of methods for investigating optical properties of materials.

physics.optics↗

arXiv2012

Variation of polarization distribution of reflected beam caused by spin separation

The variation of polarization distribution of reflected beam at specular interface and far field caused by spin separation has been studied. Due to the diffraction effect, we find a distinct difference of light polarization at the two regions. The variation of polarization distribution of reflected light provides a new method to measure the spin separation displacement caused by Spin Hall Effect of light.

physics.optics↗