arXiv subjects

Yann Canvel

Publications and source records attributed to Yann Canvel.

8 recordsLinked to original sources

arXiv2026

Concatenated continuous driving of silicon qubit by amplitude and phase modulation

The rate of coherence loss is lower for a qubit under the Rabi drive than a freely evolving qubit $T_{2}^{\rm{Rabi}}>T_{2}^*$. Building on this principle, concatenated continuous driving (CCD) keeps the qubit under continuous drive to suppress noise and manipulate dressed states by either phase or amplitude modulation. In this work, we propose a variant of CCD which simultaneously modulates both the amplitude and phase of the driving field to generate a circularly polarized field in the rotating frame of the carrier frequency. This circular-modulated CCD(CMCCD) cancels the counter-rotating term in the second rotating frame, eliminating a systematic pulse-area error that arises from an imperfect rotating wave approximation for fast gates. Numerical simulations demonstrate that the proposed CMCCD achieves higher gate fidelity than conventional CCD schemes. We further implement and compare different CCD protocols using an electron spin-qubit in an isotopically purified $^{28}$Si-MOS quantum dot and evaluate its robustness by applying static detuning and Rabi frequency errors. The robustness is significantly improved compared with the standard Rabi drive, showing the effectiveness of this scheme for qubit arrays with variation in qubit frequency, coupling to the Rabi drive, and low-frequency noise. The proposed scheme can be applied to various physical systems, including trapped atoms, cold atoms, superconducting qubits, and NV centers.

quant-ph↗

arXiv2026

A current source with metrological precision made on a 300mm silicon MOS process

Although the measurement of current is now defined with respect to the electronic charge, producing a current standard based on a single-electron source remains challenging. The error rate of a source must be below 0.01 ppm, and many such sources must be operated in parallel to provide practically useful values of current in the nanoampere range. Achieving a single electron source using an industrial grade 300 mm wafer silicon metal oxide semiconductor (MOS) process could offer a powerful route for scaling, combined with the ability for integration with control and measurement electronics. Here, we present measurements of such a single-electron source indicating an error rate of 0.008 ppm, below the error threshold to satisfy the SI Ampere, and one of the lowest error rates reported, implemented using a gate-defined quantum dot device fabricated on an industry-grade silicon MOS process. Further evidence supporting the accuracy of the device is obtained by comparing the device performance to established models of quantum tunnelling, which reveal the mechanism of operation of our source at the single particle level. The low error rate observed in this device motivates the development of scaled arrays of parallel sources utilising Si MOS devices to realise a new generation of metrologically accurate current standards.

cond-mat.mes-hall↗

arXiv2025

Long coherence silicon spin qubit fabricated in a 300 mm industrial foundry

Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fabricated in a state-of-the-art 300 mm nanoelectronics foundry and demonstrate substantially enhanced coherence, achieving a Hahn-echo time of $T_2^{\text{Hahn}} = 4\,\mathrm{ms}$ for singlet--triplet oscillations. Employing noise spectroscopy and noise correlation measurements, we identify detuning noise with an amplitude of $δ\varepsilon_{\mathrm{rms}} = 2.2\,μ\mathrm{eV}$ (integrated over 90 s) and observe strong zero-phase correlations between two spatially separated spin qubits. The singlet--triplet basis intrinsically rejects these common-mode fluctuations, yielding a pronounced suppression of dephasing. Our results suggest that exploiting the versatility of silicon quantum dots to adapt the qubit encoding to the microscopic noise landscape represents a promising strategy for advancing scalable quantum information processing.

cond-mat.mes-hall↗

arXiv2025

Eight-Qubit Operation of a 300 mm SiMOS Foundry-Fabricated Device

Silicon spin qubits are a promising platform for quantum computing due to their high coherence, controllability, and CMOS manufacturability, yet scalable implementations have so far been limited to a few qubits. Here, to take a step towards larger qubit systems, we tune and coherently control an eight-dot linear array of silicon spin qubits fabricated in a 300~mm CMOS-compatible foundry process, establishing operational scalability beyond the two-qubit regime. All eight qubits are successfully tuned and characterized as four double-dot pairs, exhibiting Ramsey dephasing times $T_2^*$ up to 41(2)$~\mu$s and Hahn-echo coherence times $T_2^{\mathrm{Hahn}}$ up to 1.31(4)$~$ms. Readout of the central four qubits is achieved via a cascaded charge-sensing protocol, enabling high-fidelity measurements of the entire multi-qubit array in a two step process. Additionally, we demonstrate a two-qubit gate operation between adjacent qubits with low phase noise. We show that silicon spin qubit arrays can be scaled to medium-sized arrays of 8 qubits while maintaining system coherence.

quant-ph↗

arXiv2025

Characterization of NbTiN/HZO/NbTiN MIM Capacitors for high frequency AC Clock & Power Distribution Network for Superconducting Digital Circuits

A resonant clock-power distribution network is critical for scaling energy efficient superconducting digital technology to practical high integration density circuits. High-k, tunable capacitors enable implementation of a resonant power delivery network supporting circuits with up to 400 Mdevices/cm2. We report the cryogenic characterization of Metal-Insulator-Metal capacitors using a Hafnium Zirconium Oxide (HZO) ferroelectric insulating layer and Niobium Titanium Nitride (NbTiN) superconducting electrodes. The fabricated chip includes capacitor arrays for low frequency characterization and a half-wave transmission line resonator for RF characterization. A specific capacitance of 3 uF/cm2, DC leakage current of 10-8 A/cm2 at 2 V and a constant 5 percent tunability up to 4 GHz were measured at 2.6 K.

cond-mat.supr-con↗

arXiv2024

A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations

Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially viable quantum computing with potentially millions of qubits on a single chip. Here, we show precise qubit operation of a silicon two-qubit device made in a 300 mm semiconductor processing line. The key metrics including single- and two-qubit control fidelities exceed 99% and state preparation and measurement fidelity exceeds 99.9%, as evidenced by gate set tomography (GST). We report coherence and lifetimes up to $T_\mathrm{2}^{\mathrm{*}} = 30.4$ $\mu$s, $T_\mathrm{2}^{\mathrm{Hahn}} = 803$ $\mu$s, and $T_1 = 6.3$ s. Crucially, the dominant operational errors originate from residual nuclear spin carrying isotopes, solvable with further isotopic purification, rather than charge noise arising from the dielectric environment. Our results answer the longstanding question whether the favourable properties including high-fidelity operation and long coherence times can be preserved when transitioning from a tailored academic to an industrial semiconductor fabrication technology.

cond-mat.mes-hall↗

arXiv2024

High-coherence superconducting qubits made using industry-standard, advanced semiconductor manufacturing

The development of superconducting qubit technology has shown great potential for the construction of practical quantum computers. As the complexity of quantum processors continues to grow, the need for stringent fabrication tolerances becomes increasingly critical. Utilizing advanced industrial fabrication processes could facilitate the necessary level of fabrication control to support the continued scaling of quantum processors. However, these industrial processes are currently not optimized to produce high coherence devices, nor are they a priori compatible with the commonly used approaches to make superconducting qubits. In this work, we demonstrate for the first time superconducting transmon qubits manufactured in a 300 mm CMOS pilot line, using industrial fabrication methods, with resulting relaxation and coherence times already exceeding 100 microseconds. We show across-wafer, large-scale statistics studies of coherence, yield, variability, and aging that confirm the validity of our approach. The presented industry-scale fabrication process, using exclusively optical lithography and reactive ion etching, shows performance and yield similar to the conventional laboratory-style techniques utilizing metal lift-off, angled evaporation, and electron-beam writing. Moreover, it offers potential for further upscaling by including three-dimensional integration and additional process optimization using advanced metrology and judicious choice of processing parameters and splits. This result marks the advent of more reliable, large-scale, truly CMOS-compatible fabrication of superconducting quantum computing processors.

quant-ph↗

arXiv2022

Low charge noise quantum dots with industrial CMOS manufacturing

Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale uniformity and high device yield, but off the shelf transistor processes cannot be directly transferred to qubit structures due to the different designs and operation conditions. To therefore leverage the know-how of the micro-electronics industry, we customize a 300mm wafer fabrication line for silicon MOS qubit integration. With careful optimization and engineering of the MOS gate stack, we report stable and uniform quantum dot operation at the Si/SiOx interface at milli-Kelvin temperature. We extract the charge noise in different devices and under various operation conditions, demonstrating a record-low average noise level of 0.61 $μ$eV/${\sqrt{Hz}}$ at 1 Hz and even below 0.1 $μ$eV/${\sqrt{Hz}}$ for some devices and operating conditions. By statistical analysis of the charge noise with different operation and device parameters, we show that the noise source can indeed be well described by a two-level fluctuator model. This reproducible low noise level, in combination with uniform operation of our quantum dots, marks CMOS manufactured MOS spin qubits as a mature and highly scalable platform for high fidelity qubits.

cond-mat.mes-hall↗