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Yating Zhang

Publications and source records attributed to Yating Zhang.

24 records · Page 2Linked to original sources

Masking Orchestration: Multi-task Pretraining for Multi-role Dialogue Representation Learning

Multi-role dialogue understanding comprises a wide range of diverse tasks such as question answering, act classification, dialogue summarization etc. While dialogue corpora are abundantly available, labeled data, for specific learning tasks, can be highly scarce and expensive. In this work, we investigate dialogue context representation learning with various types unsupervised pretraining tasks where the training objectives are given naturally according to the nature of the utterance and the structure of the multi-role conversation. Meanwhile, in order to locate essential information for dialogue summarization/extraction, the pretraining process enables external knowledge integration. The proposed fine-tuned pretraining mechanism is comprehensively evaluated via three different dialogue datasets along with a number of downstream dialogue-mining tasks. Result shows that the proposed pretraining mechanism significantly contributes to all the downstream tasks without discrimination to different encoders.

cs.CL↗

Which is conducive to high responsivity in a hybrid graphene-quantum dot transistor: Bulk- or layer- heterojunction

Heterojunction, a photoelectric conversion center, plays a critical role in photo detection. A compare study is performed on field effect phototransistors (FEpT) with two typical heterojunctions based on graphene and PbSe quantum dots (QDs) hybrid, including layer-heterojunction (LH) and bulk-heterojunction (BH). LH-FEpT exhibits a higher mobility (μn) 677 cm2V-1s-1, whereas μn of BH-FEpT is as low as 314 cm2V-1s-1, however the higher responsivity (106 A/W) is achieved by the former. Because R is proportional to the product of mobility and transfer rate, and high transfer rate of LH-FEpT overcompensates the shortage of low mobility. Although large area of heterojunction and high mobility benefit high density of photo-induced carriers, lack of transport mechanism becomes to the main constrain factor in BH-FEpT. Therefore, LH-FEpT is a better candidate of near infrared (NIR) photo detectors.

cond-mat.mtrl-sci↗

A comparing study on optoelectronic properties of phototransistors based on MEH-PPV and PbS QD hybrids with bulk- and layer-heterojunction

As the responsivity (R) of a thin film photo detector is proportional to the product of the photo-induced carrier density (n) and mobility (u) (Z. Sun, Z. Liu, J. Li, G.-a. Tai, S. Lau and F. Yan, Adv. Mater., 24, 5878, 2012), which of the types is conducive to photo detection, choosing between layer-heterojunction (LH) and bulk-heterojunction (BH) field effect phototransistors (FEpTs), is still unknown. A comparison study is performed based on an MEH-PPV and PbS QDs hybrid.

cond-mat.mes-hall↗

High-performance controllable ambipolar infrared phototransistors based on graphene-quantum dot hybrid

The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode devices. In this paper, we presented and fabricated conveniently-controlled grapheme / PbS QD hybrid FETs. Through the investigation on electric and optoelectronic properties, the ambipolar FETs (normally OFF) can be switched ON by raising gate voltage (VG) up to 3.7 V and -0.8 V in the first and third quadrants. Near these thresholds (VT) each carrier species shows comparable mobility (~ 300 cm2V-1s-1). Photo-responsivity reach ~ 107 A/W near each threshold and it will linearly increases with (VG-VT). These hybrid FETs become strongly competitive candidates for devices in flexible integrated circuits with low cost, large area, low-energy consumption and high performances.

physics.ins-det↗

Abnormal temperature dependence of mobility in conjugated polymer / nanocrystal composite: experiment and theory

Instead of normal non-Arrhenius relationship, the carrier mobility $ln(μ)$ v.s. $1/T^2$ showed abnormal dependence in an MEH-PPV / InP nanocrystal composite system that a critical temperature $(T_c)$ behavior is prominent in temperature range of 233 K to 333 K. Here, in the model of variable range hopping theory, an analytical model is developed within a Gaussian trap distribution, which is successfully implemented on that phenomenon. The results show that Tc becomes the transition temperature as long as trap-filling factor (FF) ~1, which means a transition point from Boltzmann to Fermi distribution. Furthermore, the model predicts an universal relationship of $ln(μ)$ on $1/T^2$ determined by FF in any disordered system with traps.

cond-mat.mes-hall↗

Carrier Dynamics in Submonolayer InGaAs/GaAs Quantum Dots

Carrier dynamics of submonolayer (SML) InGaAs/GaAs quantum dots (QDs) were studied by micro-photoluminecence (MPL), selectively excited photoluminescence (SEPL), and time-resolved photoluminescence (TRPL). MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon modes. TRPL reveal shorter recombination lifetimes and longer capture times for the QDs with higher emission energy. This suggests that the smallest SML QDs are formed by perfectly vertically correlated 2D InAs islands, having the highest In content and the lowest emission energy, while a slight deviation from the perfectly vertical correlation produces larger QDs with lower In content and higher emission energy.

cond-mat.mes-hall↗