arXiv subjects

Yi-Teng Huang

Publications and source records attributed to Yi-Teng Huang.

10 recordsLinked to original sources

arXiv2026

Carrier Localization in Pnictogen-Based Chalcohalides from Defect-Bound Hot Polarons

Pnictogen-based solar absorbers have gained prominence as promising nontoxic and stable alternatives to lead-halide perovskites (LHPs), but are severely limited by carrier localization, preventing their performance from approaching those of LHPs. Recent efforts have uncovered routes to overcome carrier localization, but these early efforts only considered intrinsic factors. Herein, we push beyond these limited early efforts, examining the role of defects, not only on cold carriers but also hot carriers. Focusing on the structurally one-dimensional pnictogen chalcohalide BiSBr, we find that whilst this material intrinsically does not exhibit carrier localization, vacancies introduced during synthesis or post-treatment lead to pronounced extrinsic self-trapping via the formation of defect-bound hot polarons-excited charge-carriers strongly coupled to local defect-induced vibrational modes. These above-gap defect states divert hot carriers from cooling to the band edge, thus depleting the mobile carrier population. Our findings establish the key role of defect-bound hot polarons in mediating extrinsic localization and offer new mechanistic insights into the interplay between defects, lattice coupling, and excited-state charge-carrier transport, which are critical to designing efficient perovskite-inspired solar absorbers.

cond-mat.mtrl-sci↗

arXiv2026

Rapid Atmospheric Vapor Deposition of H:In2O3 Transparent Conducting Oxide Thin Films

Transparent conducting oxides (TCOs) are essential for the optoelectronics industry, but there is a critical gap in cost-effective methods to rapidly deposit low sheet resistance, high transmittance films without damaging delicate materials, including emerging soft semiconductors like metal-halide perovskites. In this work, atmospheric pressure chemical vapor deposition (AP-CVD) is used to synthesise H:In2O3 films with 7.20+/-0.01 Ohm/sq sheet resistance (0.50+/-0.06 mOhm.cm resistivity) and transmittance up to 89% in the near-infrared (NIR), surpassing commercial sputter-deposited indium tin oxide. The growth rate is 40x higher than atomic layer deposition (ALD), and the AP-CVD films are fully processed under atmospheric conditions at only 140 C. Comparison of secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis with changes in carrier concentration indicate that H dopants are introduced from the water oxidant. There is an increase in mobility form 40+/-10 cm2/Vs to 160+/-30 cm2/Vs when changing from O2 to H2O as the oxidant, which is attributed to H dopants passivating oxygen vacancies that act as carrier scattering centers. This work establishes AP-CVD as a promising method for manufacturing high figure-of-merit TCOs in a rapid, scalable and cost-effective manner, using mild growth conditions compatible with thermally-sensitive materials.

cond-mat.mtrl-sci↗

arXiv2026

Band-Like Transport and Cation Off-Centring in Ag/Bi-Based Solar Absorbers

Ag(I)-Bi(III)-based semiconductors have gained substantial attention as nontoxic, stable alternatives to lead-halide perovskites for optoelectronics, but are widely limited by carrier localization, which severely restricts diffusion lengths. The most efficient Ag/Bi solar absorber is AgBiS2, but diffusion lengths in nanocrystal films are <50 nm. Carrier localization in this rock-salt (Fm-3m) system is believed to arise from cation disorder, and so we herein investigate the layered cation-ordered analogue. Through beyond-DFT simulations combined with neutron and X-ray powder diffraction, we reveal that off-centring of Ag+ and Bi3+ cations is energetically-favoured in this cation-ordered phase. Despite local distortions in the AgS6 and BiS6 octahedra, band-like transport takes place, which, surprisingly, also occurs in the cation-disordered rock-salt phase when these materials are made as bulk powders. The cubic-phase powders have the same degree of cation disorder as the nanocrystals that have carrier localization, which suggests that extrinsic factors play a determining role. We ascribe the intrinsic band-like transport of both phases of AgBiS2 to its close packing, ensuring high electronic dimensionality. These insights offer pathways for designing solar absorbers avoiding carrier localization limitations, and call for future efforts to enhance the efficiency of AgBiS2 photovoltaics to focus on large-grained thin films, or improved nanocrystal surface passivation.

cond-mat.mtrl-sci↗

arXiv2026

Ligand Engineering for Precise Control of Ultrathin CsPbI3 Nanoplatelet Superlattices for Efficient Light-Emitting Diodes

Strongly-confined perovskite nanoplatelets (PeNPLs) offer opportunities not found in conventional isotropic nanocubes, especially in producing linearly polarized light, as well as enhancing outcoupling through control over the transition dipole moment. But this requires ultrathin nanoplatelets with three or fewer monolayers of PbI6 octahedra across the thickness, which are challenging to synthesise uniformly, and their luminescence is strongly affected by surface defects. Together, these limit the performance of ultrathin PeNPLs in light-emitting diodes (LEDs). Here, we address these challenges with an ancillary ligand engineering strategy. We demonstrate that ligands with phosphoryl functional groups strongly bind to the perovskite surface, while having an organic backbone that is not sterically bulky ensures high ligand density. By modulating nucleation and growth, these ancillary ligands lead to monodisperse PeNPLs that stack more uniformly when self-assembled into superlattices, with suppressed agglomeration. As a result, from edge-up PeNPL superlattices, we achieve enhanced degree of polarization, while from face-down PeNPL superlattices, we achieve enhanced outcoupling that results in LEDs with 13.1% external quantum efficiency, the highest reported for ultrathin PeNPL LEDs. This work establishes ancillary ligand-induced synthesis as a decisive route to achieve uniform nanoplatelets with robust orientation control, enabling full utilization of the multifunctionality of anisotropic PeNPLs.

physics.optics↗

arXiv2024

Multifaceted nature of defect tolerance in halide perovskites and emerging semiconductors

Lead-halide perovskites (LHPs) have shot to prominence as efficient energy conversion materials that can be processed using cost-effective fabrication methods. A widely-quoted reason for their exceptional performance is their ability to tolerate defects, enabling long charge-carrier lifetimes despite high defect densities. Realizing defect tolerance in broader classes of materials would have a substantial impact on the semiconductor industry. Significant effort has been made over the past decade to unravel the underlying origins of defect tolerance to design stable alternatives to LHPs comprised of nontoxic elements. However, it has become clear that understanding defect tolerance in LHPs is far from straightforward. This review discusses the models proposed for defect tolerance in halide perovskites, evaluating the experimental and theoretical support for these models, as well as their limitations. We cover attempts to apply these models to identify materials beyond the lead-halide system that could also exhibit defect tolerance, and the successes and pitfalls encountered over the past decade. Finally, a discussion is made of some of the important missing pieces of information required for a deeper understanding and predictive models that enable the inverse design of defect tolerant semiconductors.

cond-mat.mtrl-sci↗

arXiv2024

Additive engineering for Sb$_2$S$_3$ indoor photovoltaics with efficiency exceeding 17%

Indoor photovoltaics (IPVs) have attracted increasing attention for sustainably powering Internet of Things (IoT) electronics. Sb$_2$S$_3$ is a promising IPV candidate material with a bandgap of ~1.75 eV, which is near the optimal value for indoor energy harvesting. However, the performance of Sb$_2$S$_3$ solar cells is limited by nonradiative recombination, closely associated with the poor-quality absorber films. Additive engineering is an effective strategy to improved the properties of solution-processed films. This work shows that the addition of monoethanolamine (MEA) into the precursor solution allows the nucleation and growth of Sb$_2$S$_3$ films to be controlled, enabling the deposition of high-quality Sb$_2$S$_3$ absorbers with reduced grain boundary density, optimized band positions and increased carrier concentration. Complemented with computations, it is revealed that the incorporation of MEA leads to a more efficient and energetically favorable deposition for enhanced heterogeneous nucleation on the substrate, which increases the grain size and accelerates the deposition rate of Sb$_2$S$_3$ films. Due to suppressed carrier recombination and improved charge-carrier transport in Sb$_2$S$_3$ absorber films, the MEA-modulated Sb$_2$S$_3$ solar cell yields a power conversion efficiency (PCE) of 7.22% under AM1.5G illumination, and an IPV PCE of 17.55% under 1000 lux white light emitting diode (WLED) illumination, which is the highest yet reported for Sb$_2$S$_3$ IPVs. Furthermore, we construct high performance large-area Sb$_2$S$_3$ IPV modules to power IoT wireless sensors, and realize the long-term continuous recording of environmental parameters under WLED illumination in an office. This work highlights the great prospect of Sb$_2$S$_3$ photovoltaics for indoor energy harvesting.

cond-mat.mtrl-sci↗

arXiv2024

Factors Enabling Delocalized Charge-Carriers in Pnictogen-Based Solar Absorbers: In-depth Investigation into CuSbSe2

Inorganic semiconductors based on heavy pnictogen cations (Sb3+ and Bi3+) have gained significant attention as potential nontoxic and stable alternatives to lead-halide perovskites for solar cell applications. A limitation of these novel materials, which is being increasingly commonly found, is carrier localization, which substantially reduces mobilities and diffusion lengths. Herein, the layered příbramite CuSbSe2 is investigated and discovered to have delocalized free carriers, as shown through optical pump terahertz probe spectroscopy and temperature-dependent mobility measurements. Using a combination of theory and experiment, it is found that the underlying factors are: 1) weak coupling to acoustic phonons due to low deformation potentials, as lattice distortions are primarily accommodated through rigid inter-layer movement rather than straining inter-atomic bonds, and 2) weak coupling to optical phonons due to the ionic contributions to the dielectric constant being low compared to electronic contributions. This work provides important insights into how pnictogen-based semiconductors avoiding carrier localization could be identified.

cond-mat.mtrl-sci↗

arXiv2023

Fast near-infrared photodetectors based on nontoxic and solution-processable AgBiS2

Solution-processable near-infrared (NIR) photodetectors are urgently needed for a wide range of next-generation electronics, including sensors, optical communications and bioimaging. However, there is currently a compromise between low toxicity and slow (<300 kHz cut-off frequency) organic materials versus faster detectors (>300 kHz cut-off frequency) based on compounds containing toxic lead or cadmium. Herein, we circumvent this trade-off by developing solution-processed AgBiS2 photodetectors with high cut-off frequencies under both white light (>1 MHz) and NIR (approaching 500 kHz) illumination. These high cut-off frequencies are due to the short transit distances of charge-carriers in the AgBiS2 photodetectors, which arise from the strong light absorption of these materials, such that film thicknesses well below 120 nm are adequate to absorb >65% of near-infrared to visible light. By finely controlling the thickness of the photoactive layer, we can modulate the charge-collection efficiency, achieve low dark current densities, and minimize the effects of ion migration to realize fast photodetectors that are stable in air. These outstanding characteristics enable real-time heartbeat sensors based on NIR AgBiS2 photodetectors. # equal contribution, * corresponding authors

cond-mat.mtrl-sci↗

arXiv2023

Direct Linearly-Polarised Electroluminescence from Perovskite Nanoplatelet Superlattices

Polarised light is critical for a wide range of applications, but is usually generated by filtering unpolarised light, which leads to significant energy losses and requires additional optics. Herein, the direct emission of linearly-polarised light is achieved from light-emitting diodes (LEDs) made of CsPbI3 perovskite nanoplatelet superlattices. Through use of solvents with different vapour pressures, the self-assembly of perovskite nanoplatelets is achieved to enable fine control over the orientation (either face-up or edge-up) and therefore the transition dipole moment. As a result of the highly-uniform alignment of the nanoplatelets, as well as their strong quantum and dielectric confinement, large exciton fine-structure splitting is achieved at the film level, leading to pure-red LEDs exhibiting a high degree of linear polarisation of 74.4% without any photonic structures. This work unveils the possibilities of perovskite nanoplatelets as a highly promising source of linearly-polarised electroluminescence, opening up the development of next-generation 3D displays and optical communications from this highly versatile, solution-processable system.

physics.optics↗

arXiv2020

Perovskite-Inspired Materials for Photovoltaics -- From Design to Devices

Lead-halide perovskites have demonstrated astonishing increases in power conversion efficiency in photovoltaics over the last decade. The most efficient perovskite devices now outperform industry-standard multi-crystalline silicon solar cells, despite the fact that perovskites are typically grown at low temperature using simple solution-based methods. However, the toxicity of lead and its ready solubility in water are concerns for widespread implementation. These challenges, alongside the many successes of the perovskites, have motivated significant efforts across multiple disciplines to find lead-free and stable alternatives which could mimic the ability of the perovskites to achieve high performance with low temperature, facile fabrication methods. This Review discusses the computational and experimental approaches that have been taken to discover lead-free perovskite-inspired materials, and the recent successes and challenges in synthesizing these compounds. The atomistic origins of the extraordinary performance exhibited by lead-halide perovskites in photovoltaic devices is discussed, alongside the key challenges in engineering such high-performance in alternative, next-generation materials. Beyond photovoltaics, this Review discusses the impact perovskite-inspired materials have had in spurring efforts to apply new materials in other optoelectronic applications, namely light-emitting diodes, photocatalysts, radiation detectors, thin film transistors and memristors. Finally, the prospects and key challenges faced by the field in advancing the development of perovskite-inspired materials towards realization in commercial devices is discussed.

physics.app-ph↗