arXiv subjects

Yin-Zhong Wu

Publications and source records attributed to Yin-Zhong Wu.

29 records · Page 2Linked to original sources

arXiv2007

Simulations on the electromechanical poling of ferroelectric ceramics

Based on the two-step-switching model, the process of electromechanical poling of a ferroelectric ceramics is simulated. A difference of the remnant polarizations between two poling protocols (mechanical stress is applied before and after the application of poling field) is found from our simulations, which is also observed in experiment. An explanation is given to illustrate why the remnant polarization for the case that mechanical stress is loaded after the application of electric field is larger than the case that mechanical stress is loaded before the application of electric field. Our simulation results supply a proof for the validity of the two-step-switching model in the electromechanical poling of polycrystalline ferroelectric ceramics.

cond-mat.mtrl-sci↗

arXiv2007

Charge-to-spin conversion of electron entanglement states and spin-interaction-free solid-state quantum computation

Without resorting to spin-spin coupling, we propose a scalable spin quantum computing scheme assisted with a semiconductor multiple-quantum-dot structure. The techniques of single electron transitions and the nanostructure of quantum-dot cellular automata (QCA) are used to generate charge entangled states of two electrons, which are then converted into spin entanglement states using single-spin rotations only. Deterministic two-qubit quantum gates are also manipulated using only single-spin rotations with the help of QCA. A single-shot readout of spin states can be carried out by coupling the multiple dot structure to a quantum point contact. As a result, deterministic spin-interaction-free quantum computing can be implemented in semiconductor nanostructure.

cond-mat.mes-hall↗

arXiv2007

Implementing controlled-NOT gate based on free spin qubits with semiconductor quantum-dot array

Based on electron spins in semiconductor quantum dots as qubits, a new quantum controlled-NOT(CNOT) gate is constructed in solid nanostructure without resorting to spin-spin interactions. Single electron tunneling technology and coherent quantum-dot cellular automata architecture are used to generate an ancillary charge entangled state. Using the ancillary charge entangled state as an intermediate state, we obtain a spin entangled state and design a CNOT gate by using only single spin rotations.

quant-ph↗

arXiv2005

Free spin quantum computation with semiconductor nanostructures

Taking the excess electron spin in a unit cell of semiconductor multiple quantum-dot structure as a qubit, we can implement scalable quantum computation without resorting to spin-spin interactions. The technique of single electron tunnelings and the structure of quantum-dot cellular automata (QCA) are used to create a charge entangled state of two electrons which is then converted into spin entanglement states by using single spin rotations. Deterministic two-qubit quantum gates can also be manipulated using only single spin rotations with help of QCA. A single-short read-out of spin states can be realized by coupling the unit cell to a quantum point contact.

quant-ph↗

arXiv2004

Universal quantum computation with electron spins in quantum dots based on superpositions of spacetime paths and Coulomb blockade

Using electrostatic gates to control the electron positions, we present a new controlled-NOT gate based on quantum dots. The qubit states are chosen to be the spin states of an excess conductor electron in the quantum dot; and the main ingredients of our scheme are the superpositions of space-time paths of electrons and the effect of Coulomb blockade. All operations are performed only on individual quantum dots and are based on fundamental interactions. Without resorting to spin-spin terms or other assumed interactions, the scheme can be realized with a dedicated circuit and a necessary number of quantum dots. Gate fidelity of the quantum computation is also presented.

quant-ph↗

arXiv2004

The Effects of the interfacial Pseudo-spin Coupling Fluctuation on the Dielectric Property of a Ferroelectric Superlattice

Using effective-field theory with correlations, we investigate the effects of interfacial pseudo-spin coupling fluctuations on the susceptibility and polarization of ferroelectric superlattices within the framework of transverse Ising model. It is found that the interfacial coupling fluctuations increase the susceptibility in the low temperature region. For a strong interfacial coupling, the phase transition temperature decreases with the strength of fluctuations of the interfacial coupling. The dependence of the susceptibility on the superlattice period of $BaTiO_{3}/SrTiO_{3}$ are plotted for different interfacial coupling fluctuations strength. At room temperature, when the interfacial coupling fluctuation increases, the peak position of the susceptibility will shift to a large superlattice period.

cond-mat.mtrl-sci↗

arXiv2002

The Effects of a Non-Ferroelectric Slab on the Polarization and the Susceptibility of the Ferroelectric Multilayer

The polarization and the susceptibility of a ferroelectric multilayer with a non-ferroelectric slab are investigated within the framework of transverse Ising model with a four-spin interaction term. The effect of the thickness and the position of the non-ferroelectric slab are investigated in this paper. We find that the increase of the thickness of the non-ferroelectric will decrease the polarization and the susceptibility of the film. If the position of the non-ferroelcetric slab shifts from the center of the film to the surface, the number of the peaks of the susceptibility will change. And a step-like polarization curve is found.

cond-mat.mtrl-sci↗

arXiv2002

Electron self-energy and effective mass in a single heterostructure

In this paper, we investigate the electron self-energy and effective mass in a single heterostructure using Green-function method. Numerical calculations of the electron self-energy and effective mass for GaAs/AlAs heterostructure are performed. The results show that the self energy (effective mass) of electron, which incorporate the energy of electron coupling to interface-optical phonons and half three-dimension LO phonons, monotonically increase(decrease) from that of interface polaron to that of 3D bulk polaron with the increase of the distance between the position of the electron and interface.

cond-mat.mtrl-sci↗

arXiv2002

Long-range Effects on the Pyroelectric Coefficient and Dielectric Susceptibility of a Ferroelectric Bilayer

Long-range effects on the pyroelectric coefficient and susceptibility of a ferroelectric bilayer with a ferroelectric interfacial coupling are investigated by use of the transverse Ising model within the framework of mean-field theory. The effects of the interfacial coupling and the transverse field on the pyroelectric coefficient and susceptibility of the bilayer are investigated by taking into account the long-range interaction. It is found that the pyroelectric coefficient and susceptibility increase with the decrease of the magnitude of the long-range interaction and the interfacial coupling when the temperature is lower than the phase transition temperature. We also find that the strong long-range interaction, the large transverse field and weak interfacial coupling can lead to the disappearance of some of the peaks of the pyroelectric coefficient and susceptibility of the ferroelectric bilayer. The phase transition temperature increases with the increase of the strength of the long-range interaction, which is similar to the results obtained in ferroelectric multi-layers or superlattice.

cond-mat.mtrl-sci↗

arXiv2002

Long-range Effects on the Pyroelectric Coefficient of Ferroelectric Superlattice

Long-range effects on the pyroelectric coefficient of a ferroelectric superlattice consisting of two different ferroelectric materials are investigated based on the Transverse Ising Model. The effects of the interfacial coupling and the thickness of one period on the pyroelectric coefficient of the ferroelectric superlattice are studied by taking into account the long-range interaction. It is found that with the increase of the strength of the long-range interaction, the pyroelectric coefficient decreases when the temperature is lower than the phase transition temperature; the number of the pyroelectric peaks decreases gradually and the phase transition temperature increases. It is also found that with the decrease of the interfacial coupling and the thickness of one period, the phase transition temperature and the number of the pyroelectric peaks decrease.

cond-mat.mtrl-sci↗

arXiv2001

Long-range Effect on the Curie Temperature of Ferroelectric Films

In this paper, the Curie temperature of ferroelectric films is studied using spin-1/2 transverse Ising model with long-range interaction within the framework of the effective-field theory. The dependence of the Curie temperature on the thickness of the film, the surface interaction and the transverse field were investigated. It is assumed that the long-range interaction decays with the distance between the pseudo-spins as a power law. The dependence of the Curie temperature and the critical transverse field on the long-range exponent are obtained.

cond-mat.mtrl-sci↗