arXiv subjects

Yin-Zhong Wu

Publications and source records attributed to Yin-Zhong Wu.

At least 19 recordsLinked to original sources

arXiv2026

Decoherence of ergotropy of a relativistic battery as a probe of motion-selected Unruh thermality in Minkowski spacetime

We put forward a physical model of a relativistic Unruh-DeWitt battery moving along a general accelerated trajectory, including a linear motion and a circular motion with a reflecting boundary. The maximal amount of quantum work extraction, defined as the ergotropy, serves as a witness to Unruh effect modified by motion trajectories. It is found out that for a very low Unruh temperature, linear motion yields a high amount of ergotropy, while for a high temperature, circular motion becomes optimal for estimating the Unruh effect. For a specific acceleration, the ergotropy is the same for two different trajectories. The behavior demonstrates that, in a certain condition, one can simulate the work extraction of the accelerated battery in a linear motion by exploring the battery in circular motion. The observed ergotropy for the thermality is closely related to quantum coherence affected by spacetime vacuum fluctuations. In the presence of a reflecting boundary plane, we study different ways for the dynamics of the ergotropy. When the battery moves near the boundary, the prominent oscillation of the ergotropy will happen and exhibit some large instantaneous peaks. The interesting phenomenon results from the protection of quantum coherence for the accelerated battery in the vicinity of the boundary. Far away from the boundary, the oscillation behavior can be suppressed and the ergotropy rapidly arrives at a steady value. By contrast, the circular motion contributes to prolonging the oscillation evolution. The asymptotic amount of the ergotropy can rise progressively up to a saturation value with increasing the distance from the circular trajectory to the boundary plane. From the perspective of energy transfer, optimized quantum work extraction for the accelerated battery moving along a selected motion with a boundary plane is advantageous for probing Unruh thermality.

gr-qc↗

arXiv2025

Coherent quantum work extraction of a relativistic battery as a probe for acceleration-induced Unruh thermality

We propose a physical scheme of a uniformly accelerated Unruh-DeWitt battery and utilize quantum work extraction as a probe to witness the thermal nature of the Unruh effect induced by the accelerated motion. By employing the open quantum system approach, we analyze the coherent and incoherent components of the ergotropy which is the maximum amount of quantum work extraction of the relativistic battery driven by a coherent field. It has been proved that the steady values of coherent quantum work extraction in the asymptotic condition is only determined by the acceleration-dependent Unruh temperature. The asymptotic behavior of coherent ergotropy can demonstrate the thermal nature of the Unruh effect with respect to the Kubo-Martin-Schwinger condition. Under the circumstance of the Unruh effect, we explore the effect of the phase of the coherent charging field on the dynamics of coherent ergotropy when the battery approaches to the same thermal equilibrium state. The variation in the phase of the coherent driving field can improve the energy storage capacity of a relativistic battery. From viewpoint of energy transfer, the relativistic battery is helpful to examine the Unruh thermality.

gr-qc↗

arXiv2025

Valley Polarization and Anomalous Valley Hall Effect in Altermagnet Ti2Se2S with Multipiezo Properties

Recently, altermagnets demonstrate numerous newfangle physical phenomena due to their inherent antiferromagnetic coupling and spontaneous spin splitting, that are anticipated to enable innovative spintronic devices. However, the rare two-dimensional altermagnets have been reported, making it difficult to meet the requirements for high-performance spintronic devices on account of the growth big data. Here, we predict a stable monolayer Ti2Se2S with out-of-plane altermagnetic ground state and giant valley splitting. The electronic properties of altermagnet Ti2Se2S are highly dependent on the onsite electron correlation. Through symmetry analysis, we find that the valleys of X and Y points are protected by the mirror Mxy symmetry rather than the time-reversal symmetry. Therefore, the multipiezo effect, including piezovalley and piezomagnetism, can be induced by the uniaxial strain. The total valley splitting of monolayer Ti2Se2S can be as high as ~500 meV. Most interestingly, the direction of valley polarization can be effectively tuned by the uniaxial strain, based on this, we have defined logical "0", "+1", and "-1" states for data transmission and storage. In addition, we have designed a schematic diagram for observing the anomalous Hall effect in experimentally. Our findings have enriched the candidate materials of two-dimensional altermagnet for the ultra-fast and low power consumption device applications.

cond-mat.mtrl-sci↗

arXiv2025

Stacking, Strain-Engineering Induced Altermagnetism, Multipiezo Effect, and Topological State in Two-Dimensional Materials

Altermagnetism, as a newly identified form of unconventional antiferromagnetism, enables the removal of spin degeneracy in the absence of net magnetization that provides a platform for the low power consumption and ultra-fast device applications. However, the rare attention has been paid to the relationship between stacking, strain and altermagnet, multipiezo effect and topological state. Here, we propose a mechanism to realize the altermagnet, multipiezo effect, and topological state in two-dimensional materials by the stacking and strain engineering. Based on the analysis of symmetry, we find that the spin splitting feature related to the Ut, PTt, MzUt, or MzPTt symmetries in altermagnet multilayers. In addition, we find that the stacking engineering can effectively realize the transform from antiferromagnetism to altermagnetism and semiconductor to metal for the Jauns bilayer V2SeTeO. More interestingly, the strain not only induces an intriguing multipiezo effect, encompassing the piezovalley, piezomagnetism and piezoelectric, but also achieves the abundant topological phase. Our findings offer a generalized direction for manipulating the spin splitting, valley polarization, and topological states, promoting practical application of valleytronic and spintronic devices based on two-dimensional altermagnets.

cond-mat.mtrl-sci↗

arXiv2025

Coexisting Triferroic and Multiple Types of Valley Polarization by Structural Phase Transition in Two-Dimensional Materials

The multiferroic materials, which coexist magnetism, ferroelectric, and ferrovalley, have broad practical application prospects in promoting the miniaturization and integration of spintronic and valleytronic devices. However, it is rare that there are triferroic orders and multiple types of valley polarization in a real material. Here, we propose a mechanism to realize triferroic order coexistence and multiple types of valley polarization by structural phase transition in two-dimensional (2D) materials. The 1T and 2H phase OsBr2 monolayers exhibit non-magnetic semiconductor and ferromagnetic semiconductor with valley polarization up to 175.49 meV, respectively. Interestingly, the 1T phase OsBr2 bilayer shows the tri-state valley polarization due to lattice symmetry breaking, while the valley polarization of 2H phase bilayer originates from the combined effect of time-reversal symmetry breaking and spin-orbit coupling. Furthermore, the valley polarization and ferroelectric polarization of 1T phase AB stackings and 2H phase AA stackings can be manipulated via interlayer sliding. Importantly, we have verified that the 2H phase can be transformed to 1T phase by Li+ ion intercalation, while the 2H phase can occur the structural phase transition into the 1T phase by infrared laser induction. Our work provides a feasible strategy for manipulating valley polarization and a design idea for nano-devices with nonvolatile multiferroic properties.

cond-mat.mtrl-sci↗

arXiv2024

Ferroelectric tuning of the valley polarized metal-semiconductor transition in Mn2P2S3Se3/Sc2CO2 van der Waals heterostructures and application to nonlinear Hall effect devices

In order to promote the development of the next generation of nano-spintronic devices, it is of great significance to tune the freedom of valley in two-dimensional (2D) materials. Here, we propose a mechanism for manipulating the valley and nonlinear Hall effect by the 2D ferroelectric substrate. The monolayer Mn2P2S3Se3 is a robust antiferromagnetic valley polarized semiconductor. Importantly, the valley polarized metal-semiconductor phase transition of Mn2P2S3Se3 can be effectively tuned by switching the ferroelectric polarization of Sc2CO2. We reveal the microscopic mechanism of phase transition, which origins from the charge transfer and band alignment. Additionally, we find that transformed polarization direction of Sc2CO2 flexibly manipulate the Berry curvature dipole. Based on this discovery, we present the detection valley polarized metal-semiconductor transition by the nonlinear Hall effect devices. These findings not only offer a scheme to tune the valley degree of freedom, but also provide promising platform to design the nonlinear Hall effect devices.

cond-mat.mtrl-sci↗

arXiv2024

Coexisting Magnetism, Ferroelectric, and Ferrovalley Multiferroic in Stacking-Dependent Two-Dimensional Materials

The two-dimensional (2D) multiferroic materials have widespread of application prospects in facilitating the integration and miniaturization of nanodevices. However, it is rarely coupling between the magnetic, ferroelectric, and ferrovalley in one 2D material. Here, we propose a mechanism for manipulating magnetism, ferroelectric, and valley polarization by interlayer sliding in 2D bilayer material. Monolayer GdI2 exhibits a ferromagnetic semiconductor with the valley polarization up to 155.5 meV. More interestingly, the magnetism and valley polarization of bilayer GdI2 can be strongly coupled by sliding ferroelectricity, appearing these tunable and reversible. In addition, we uncover the microscopic mechanism of magnetic phase transition by spin Hamiltonian and electron hopping between layers. Our findings offer a new direction for investigating 2D multiferroic in the implication for next-generation electronic, valleytronic, and spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Transition metal single-atom anchored on MoSi2N4 monolayer as highly efficient electrocatalyst for hydrogen evolution reaction

Single-atom catalysts are considered as a promising method for efficient energy conversion, owing to their advantages of high atom utilization and low catalyst cost. However, finding a stable two-dimensional structure and high hydrogen evolution reaction (HER) performance is a current research hotspot. Herein, based on the first-principles calculations, we identify the HER properties of six catalysts (TM@MoSi2N4, TM = Sc, Ti, V, Fe, Co, and Ni) comprising transition metal atoms anchored on MoSi2N4 monolayer. The results show that the spin-polarized states appear around the Fermi level after anchoring TM atoms. Therefore, the energy level of the first available unoccupied state for accommodating hydrogen drops, regulating the bonding strength of hydrogen. Thus, the single transition metal atom activates the active site of the MoSi2N4 inert base plane, becoming a quite suitable site for the HER. Based on ΔGH*, the exchange current density and volcano diagram of the corresponding catalytic system were also calculated. Among them, V@MoSi2N4 (ΔGH* = -0.07 eV) and Ni@MoSi2N4 (ΔGH* = 0.06 eV) systems show efficient the HER property. Our study confirms that the transition metal atom anchoring is an effective means to improve the performance of electrocatalysis, and TM@MoSi2N4 has practical application potential as a high efficiency HER electrocatalyst.

cond-mat.mtrl-sci↗

arXiv2023

Built-in electric field and strain tunable valley-related multiple topological phase transitions in VSiXN$_4$ (X= C, Si, Ge, Sn, Pb) monolayers

The valley-related multiple topological phase transitions attracted significant attention due to their providing significant opportunities for fundamental research and practical applications. However, unfortunately, to date there is no real material that can realize valley-related multiple topological phase transitions. Here, through first-principles calculations and model analysis, we investigate the structural, magnetic, electronic, and topological properties of VSiXN$_4$ (X = C, Si, Ge, Sn, Pb) monolayers. VSiXN$_4$ monolayers are stable and intrinsically ferrovalley materials. Intriguingly, we found that the built-in electric field and strain can induce valley-related multiple topological phase transitions in the materials from valley semiconductor to valley-half-semimetal, to valley quantum anomalous Hall insulator, to valley-half-semimetal, and to valley semiconductor (or to valley-metal). The nature of topological phase transition is the built-in electric field and strain induce band inversion between the d$_{xy}$/d$_{x2-y2}$ and d$_{z2}$ at obritals at K and K' valleys. Our findings not only reveal the mechanism of multiple topological phase transitions, but also provides an ideal platform for the multi-field manipulating the spin, valley, and topological physics. It will open new perspectives for spintronic, valleytronic, and topological nanoelectronic applications based on these materials.

cond-mat.mes-hall↗

arXiv2022

Single-atom anchored novel two-dimensional MoSi2N4 monolayers for efficient electroreduction of CO2 to formic acid and methane

Efficient and selective CO2 electroreduction into value-added chemicals and fuels emerged as a significant approach for CO2 conversion, however, it relies on catalysts with controllable product selectivity and reaction paths. In this work, by means of first-principles calculations, we identify five catalysts (TM@MoSi2N4, TM = Sc, Ti, Fe, Co and Ni) comprising transition-metal atoms anchored on a MoSi2N4 monolayer, whose catalytic performance can be controlled by adjusting the d-band center and occupation of supported metal atoms. During CO2 reduction, the single metal atoms function as the active sites activates the MoSi2N4 inert basal-plane, and as-designed electrocatalysts exhibit excellent activity in CO2 reduction. Interestingly, HCOOH is the preferred product of CO2 reduction on the Co@MoSi2N4 catalyst with a rate-determining barrier of 0.89 eV, while the other four catalysts prefer to reduce CO2 to CH4 with a rate-determining barrier of 0.81-1.24 eV. Moreover, MoSi2N4 is an extremely-air-stable material, which will facilitate its application in various environments. Our findings provide a promising candidate with high activity, catalysts for renewable energy technologies, and selectivity for experimental work.

cond-mat.mes-hall↗

arXiv2018

Phase diagram of the spin-1/2 Heisenberg alternating chain in a magnetic field

By using the infinite time-evolving block decimation, we study quantum fidelity and entanglement entropy in the spin-1/2 Heisenberg alternating chain under an external magnetic field. The effects of the magnetic field on the fidelity are investigated, and its relation with the quantum phase transition (QPT) is analyzed. The phase diagram of the model is given accordingly, which supports the Haldane phase, the singlet-dimer phase, the Luttinger liquid phase and the paramagnetic phase. The scaling of entanglement entropy in the gapless Luttinger liquid phase is studied, and the central charge c = 1 is obtained. We also study the relationship between the quantum coherence, string order parameter and QPTs. Results obtained from these quantum information observations are consistent with the previous reports.

quant-ph↗

arXiv2015

Expansion dynamics in a one-dimensional hard-core boson model with three-body interactions

Using the adaptive time-dependent density matrix renormalization group method, we numerically investigate the expansion dynamics of bosons in a one-dimensional hard-core boson model with three-body interactions. It is found that the bosons expand ballistically with weak interaction, which are obtained by local density and the radius $R_n$. It is shown that the expansion velocity $V$, obtained from $R_n=Vt$, is dependent on the number of bosons. As a prominent result, the expansion velocity decreases with the enhancement of three-body interaction. We further study the dynamics of the system, which quenches from the ground state with two-thirds filling, the results indicate the expansion is also ballistic in the gapless phase regime. It could help us detect the phase transition in the system.

quant-ph↗

arXiv2014

Pinned interface dipole-induced tunneling electroresistance in ferroelectric tunnel junctions

Based on the structure predicted in a ferroelectric tunnel junction in the resent density functional theory study, we investigate the electron transport through the FTJ with asymmetric interfaces, i.e., one interface dipole is pinned and the other interface dipole is switchable. Tuneling electroresistance can be induced due to the nonswitchable interface dipole in FTJs with symmetric electrodes. Compared with the dependence relationship between TER and the polarization of switchable interface, TER is not sensitive to the variation of the polarization of pinned interface. A large TER can be achieved when the pinned polarization points to the ferroelectric film and low interface dielectric constants. In addition, effect of electrode on TER in the structure is also discussed.

cond-mat.mtrl-sci↗

arXiv2014

Interfacial dead layer effects on current-voltage characteristics in asymmetric ferroelectric tunnel junctions

Current-voltage characteristics and $P-E$ loops are simulated in SrRuO$_{3}$/BaTiO$_{3}$/Pt tunneling junctions with interfacial dead layer. The unswitchable interfacial polarization is coupled with the screen charge and the barrier polarization self-consistently within the Thomas-Fermi model and the Landau-Devonshire theory. The shift of P-E loop from the center position and the unequal values of the positive coercive field and the negative coercive field are found, which are induced by the asymmetricity of interface dipoles. A complete J-V curve of the junction is shown for different barrier thickness, and the effect of the magnitude of interfacial polarization on the tunneling current is also investigated.

cond-mat.mtrl-sci↗

arXiv2014

Interface control of ferroelectricity in LaNiO3-BaTiO3 superlattices

LaNiO$_{3}$-BaTiO$_{3}$ superlattices with different types of interfaces are studied from first-principles density-functional theory. It is revealed that the ferroelectricity in the superlattice with (NiO$_2$)$^-$/(BaO)$^0$ interfaces is enhanced from that of the superlattice with (LaO)$^+$/(TiO$_2$)$^0$ interfaces. The origin lies at the polar discontinuity at the interface, which makes the holes localized within the (NiO$_2$)$^-$/(BaO)$^0$ interface, but drives a penetration of electrons into BaTiO$_3$ component near (LaO)$^+$/(TiO$_2$)$^0$ interface. Our calculations demonstrate an effective avenue to the robust ferroelectricity in BaTiO$_3$ ultrathin films.

cond-mat.mtrl-sci↗

arXiv2012

Quantum discord and entanglement in Heisenberg XXZ spin chain after quenches

Using the adaptive time-dependent density-matrix renormalization group method, the dynamics of entanglement and quantum discord of a one-dimensional spin-1/2 XXZ chain is studied when anisotropic interaction quenches are applied at different temperatures. The dynamics of the quantum discord and pairwise entanglement between the nearest qubits shows that the entanglement and quantum discord will first oscillate and then approach to a constant value. The quantum discord can be used to predict the quantum phase transition, while the entanglement cannot.

quant-ph↗

arXiv2009

Interfacial effects on the polarization of $BiFeO_{3}$ films

By considering an interfacial layer between the electrode and the $BiFeO_{3}$($BFO$) layer, the polarization and the hysteresis behavior of $BFO$ film are simulated. It is found that the non-ferroelectric interface will increase the coercive field, and remarkably suppress the polarization of the ultrathin film under low applied fields. Due to the competition between the interfacial effect and the internal compressive stress, the maximum polarization on the P-E loop of a $BFO$ film can be independent on the film thickness under an adequate applied field.

cond-mat.mtrl-sci↗

arXiv2007

Effects of anisotropic in-plane strains on the phase diagram of BaxSr1-xTiO3 thin film

Based on Landau-Devonshire (LD) phenomenological theory, phase diagram of epitaxial BST50/50 thin films on anisotropic in-plane strains is investigated. Different from BaTiO3 thin films, the paraelectric phase appears under the anisotropic misfit strains on BST50/50 thin films at the room temperature. The pyroelectric property of the BST films is also calculated, we find that the position of pyroelectric peak greatly depends on anisotropic misfit strains. Keywords: anisotropic in-plane strains; BST thin films; phase diagram

cond-mat.mtrl-sci↗