arXiv subjects

Yoichi Ando

Publications and source records attributed to Yoichi Ando.

At least 91 records · Page 5Linked to original sources

arXiv2016

Thermodynamic evidence for nematic superconductivity in Cu$_x$Bi$_2$Se$_3$

Unconventional superconductivity is characterized by the spontaneous symmetry breaking of the macroscopic superconducting wavefunction in addition to the gauge symmetry breaking, such as rotational-symmetry breaking with respect to the underlying crystal-lattice symmetry. Particularly, superconductivity with spontaneous rotational-symmetry breaking in the wavefunction amplitude and thus in bulk properties, not yet reported previously, is intriguing and can be termed "nematic" superconductivity in analogy to nematic liquid-crystal phases. Here, based on specific-heat measurements of the single-crystalline Cu$_x$Bi$_2$Se$_3$ under accurate magnetic-field-direction control, we report thermodynamic evidence for nematic superconductivity, namely, clear two-fold-symmetric behavior in a trigonal lattice. The results indicate realization of an "odd-parity nematic" state, feasible only by macroscopic quantum condensates and distinct from nematic states in liquid crystals. The results also confirm topologically non-trivial superconductivity in Cu$_x$Bi$_2$Se$_3$.

cond-mat.supr-con↗

arXiv2016

Switching of Charge-Current-Induced Spin Polarization in the Topological Insulator BiSbTeSe2

The charge-current-induced spin polarization is a key property of topological insulators for their applications in spintronics. However, topological surface states are expected to give rise to only one type of spin polarization for a given current direction, which has been a limiting factor for spin manipulations. Here we report that in devices based on the bulk-insulating topological insulator BiSbTeSe2, an unexpected switching of spin polarization was observed upon changing the chemical potential. The spin polarization expected from the topological surface states was detected in a heavily electron-doped device, whereas the opposite polarization was reproducibly observed in devices with low carrier densities. We propose that the latter type of spin polarization stems from topologically-trivial two-dimensional states with a large Rashba spin splitting, which are caused by a strong band bending at the surface of BiSbTeSe2 beneath the ferromagnetic electrode used as a spin detector. This finding paves the way for realizing the "spin transistor" operation in future topological spintronic devices.

cond-mat.mes-hall↗

arXiv2016

Metal-insulator transition and tunable Dirac-cone surface state in the topological insulator TlBi1-xSbxTe2 studied by angle-resolved photoemission

We report a systematic angle-resolved photoemission spectroscopy on topological insulator (TI) TlBi1-xSbxTe2 which is bulk insulating at 0.5 < x < 0.9 and undergoes a metal-insulator-metal transition with the Sb content x. We found that this transition is characterized by a systematic hole doping with increasing x, which results in the Fermi-level crossings of the bulk conduction and valence bands at x~ 0 and x~1, respectively. The Dirac point of the topological surface state is gradually isolated from the valence-band edge, accompanied by a sign reversal of Dirac carriers. We also found that the Dirac velocity is the largest among known solid-solution TI systems. The TlBi1-xSbxTe2 system thus provides an excellent platform for Dirac-cone engineering and device applications of TIs.

cond-mat.mes-hall↗

arXiv2016

Fermiology of possible topological superconductor Tl0.5Bi2Te3 derived from hole-doped topological insulator

We have performed angle-resolved photoemission spectroscopy on Tl0.5Bi2Te3, a possible topological superconductor derived from Bi2Te3. We found that the bulk Fermi surface consists of multiple three-dimensional hole pockets surrounding the Z point, produced by the direct hole doping into the valence band. The Dirac-cone surface state is well isolated from the bulk bands, and the surface chemical potential is variable in the entire band-gap range. Tl0.5Bi2Te3 thus provides an excellent platform to realize two-dimensional topological superconductivity through a proximity effect from the superconducting bulk. Also, the observed Fermi-surface topology provides a concrete basis for constructing theoretical models for bulk topological superconductivity in hole-doped topological insulators.

cond-mat.supr-con↗

arXiv2016

Work function of bulk-insulating topological insulator Bi2-xSbxTe3-ySey

Recent discovery of bulk insulating topological insulator (TI) Bi2-xSbxTe3-ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of work function in Bi2-xSbxTe3-ySey by high-resolution photoemission spectroscopy. The obtained work-function values (4.95-5.20 eV) show a systematic variation with the composition, well tracking the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.

cond-mat.mes-hall↗

arXiv2016

Unexpected Dirac-Node Arc in the Topological Line-Node Semimetal HfSiS

We have performed angle-resolved photoemission spectroscopy on HfSiS, which has been predicted to be a topological line-node semimetal with square Si lattice. We found a quasi-two-dimensional Fermi surface hosting bulk nodal lines, alongside the surface states at the Brillouin-zone corner exhibiting a sizable Rashba splitting and band-mass renormalization due to many-body interactions. Most notably, we discovered an unexpected Dirac-like dispersion extending one-dimensionally in k space - the Dirac-node arc - near the bulk node at the zone diagonal. These novel Dirac states reside on the surface and could be related to hybridizations of bulk states, but currently we have no explanation for its origin. This discovery poses an intriguing challenge to the theoretical understanding of topological line-node semimetals.

cond-mat.mes-hall↗

arXiv2016

Universal scaling for the spin-electricity conversion on surface states of topological insulators

We have investigated spin-electricity conversion on surface states of bulk-insulating topological insulator (TI) materials using a spin pumping technique. The sample structure is Ni-Fe|Cu|TI trilayers, in which magnetic proximity effects on the TI surfaces are negligibly small owing to the inserted Cu layer. Voltage signals produced by the spin-electricity conversion are clearly observed, and enhanced with decreasing temperature in line with the dominated surface transport at lower temperatures. The efficiency of the spin-electricity conversion is greater for TI samples with higher resistivity of bulk states and longer mean free path of surface states, consistent with the surface spin-electricity conversion.

cond-mat.mtrl-sci↗

arXiv2016

Superconductivity in Tl_{0.6}Bi_{2}Te_{3} Derived from a Topological Insulator

Bulk superconductivity has been discovered in Tl_{0.6}Bi_{2}Te_{3}, which is derived from the topological insulator Bi2Te3. The superconducting volume fraction of up to 95% (determined from specific heat) with Tc of 2.28 K was observed. The carriers are p-type with the density of ~1.8 x 10^{20} cm^{-3}. Resistive transitions under magnetic fields point to an unconventional temperature dependence of the upper critical field B_{c2}. The crystal structure appears to be unchanged from Bi2Te3 with a shorter c-lattice parameter, which, together with the Rietveld analysis, suggests that Tl ions are incorporated but not intercalated. This material is an interesting candidate of a topological superconductor which may be realized by the strong spin-orbit coupling inherent to topological insulators.

cond-mat.supr-con↗

arXiv2015

Direct Observation of Nonequivalent Fermi-Arc States of Opposite Surfaces in Noncentrosymmetric Weyl Semimetal NbP

We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) on noncentrosymmetric Weyl semimetal candidate NbP, and determined the electronic states of both Nb- and P-terminated surfaces corresponding to the "opposite" surfaces of a polar crystal. We revealed a drastic difference in the Fermi-surface topology between the opposite surfaces, whereas the Fermi arcs on both surfaces are likely terminated at the surface projection of the same bulk Weyl nodes. Comparison of the ARPES data with our first-principles band calculations suggests notable difference in electronic structure at the Nb-terminated surface between theory and experiment. The present result opens a platform for realizing exotic quantum phenomena arising from unusual surface properties of Weyl semimetals.

cond-mat.mes-hall↗

arXiv2015

Revealing puddles of electrons and holes in compensated topological insulators

Three-dimensional topological insulators harbour metallic surface states with exotic properties. In transport or optics, these properties are typically masked by defect-induced bulk carriers. Compensation of donors and acceptors reduces the carrier density, but the bulk resistivity remains disappointingly small. We show that measurements of the optical conductivity in BiSbTeSe$_2$ pinpoint the presence of electron-hole puddles in the bulk at low temperatures, which is essential for understanding DC bulk transport. The puddles arise from large fluctuations of the Coulomb potential of donors and acceptors, even in the case of full compensation. Surprisingly, the number of carriers appearing within puddles drops rapidly with increasing temperature and almost vanishes around 40 K. Monte Carlo simulations show that a highly non-linear screening effect arising from thermally activated carriers destroys the puddles at a temperature scale set by the Coulomb interaction between neighbouring dopants, explaining the experimental observation semi-quantitatively. This mechanism remains valid if donors and acceptors do not compensate perfectly.

cond-mat.mes-hall↗

arXiv2015

Superconducting Sn_{1-x}In_{x}Te Nanoplates

Recently, the search for Majorana fermions has become one of the most prominent subjects in condensed matter physics. This search involves explorations of new materials and hence offers interesting opportunities for chemistry. Theoretically, Majorana fermions may reside in various types of topological superconductor materials, and superconducting Sn_{1-x}In_{x}Te, which is a doped topological crystalline insulator, is one of the promising candidates to harbor Majorana fermions. Here, we report the first successful growth of superconducting Sn_{1-x}In_{x}Te nanoplates on Si substrates by a simple vapor transport method without employing any catalyst. We observed robust superconducting transitions in those nanoplates after device fabrication and found that the relation between the critical temperature and the carrier density is consistent with that of bulk single crystals, suggesting that the superconducting properties of the nanoplate devices are essentially the same as those of bulk crystals. With the help of nanofabrication, those nanoplates would prove useful for elucidating the potentially topological nature of superconductivity in Sn_{1-x}In_{x}Te to harbor Majorana fermions and thereby contribute to the future quantum technologies.

cond-mat.mes-hall↗

arXiv2015

Ferromagnetism in Cr-doped topological insulator TlSbTe2

We have synthesized a new ferromagnetic topological insulator by doping Cr to the ternary topological-insulator material TlSbTe2. Single crystals of Tl_{1-x}Cr_{x}SbTe2 were grown by a melting method and it was found that Cr can be incorporated into the TlSbTe2 matrix only within the solubility limit of about 1%. The Curie temperature θ_c was found to increase with the Cr content but remained relatively low, with the maximum value of about 4 K. The easy axis was identified to be the c-axis and the saturation moment was 2.8 μ_B (Bohr magneton) at 1.8 K. The in-plane resistivity of all the samples studied showed metallic behavior with p-type carriers. Shubnikov-de Hass (SdH) oscillations were observed in samples with the Cr-doping level of up to 0.76%. We also tried to induce ferromagnetism in TlBiTe2 by doping Cr, but no ferromagnetism was observed in Cr-doped TlBiTe2 crystals within the solubility limit of Cr which turned out to be also about 1%.

cond-mat.mtrl-sci↗

arXiv2015

Observation of Two-Dimensional Bulk Electronic States in a Superconducting Topological Insulator Heterostructure Cux(PbSe)5(Bi2Se3)6: Implications for Unconventional Superconductivity

We have performed angle-resolved photoemission spectroscopy (ARPES) on Cux(PbSe)5(Bi2Se3)6 (CPSBS; x = 1.47), a superconductor derived from a topological insulator heterostructure, to elucidate the electronic states relevant to the occurrence of possible unconventional superconductivity. Upon Cu intercalation into the parent compound (PbSe)5(Bi2Se3)6, we observed a distinct energy shift of the bulk conduction band due to electron doping. Photon-energy dependent ARPES measurements of CPSBS revealed that the observed bulk band forms a cylindrical electronlike Fermi surface at the Brillouin-zone center. The two-dimensional nature of the bulk electronic states suggests the occurrence of odd-parity Eu pairing or even-parity d-wave pairing, both of which may provide a platform of Majorana bound states in the superconducting state.

cond-mat.mes-hall↗

arXiv2015

Instantaneous Photon Drag Currents in Topological Insulators

Topological insulator materials have been extensively studied in the field of condensed matter physics because nontrivial topology in the electronic state gives rise to a novel spin-polarized Dirac dispersion on the surface. To describe the electrodynamics of topological insulators, it is crucial to understand coherent and incoherent dynamics of carriers both in bulk and surface states. We applied terahertz emission spectroscopy to an intrinsic three-dimensional topological insulator material, $Bi_{1.5} Sb_{0.5} Te_{1.7} Se_{1.3}$, to elucidate ultrafast photo-induced carrier dynamics. The emitted terahertz electric field strongly depended on the polarization and incident angle of the excitation pulse. A three-fold rotational symmetry was clearly confirmed in the dependence of terahertz emissions on the azimuthal angle. The origin of terahertz emissions should be instantaneous photon drag currents induced by the excitation of femtosecond pulses.

cond-mat.mtrl-sci↗

arXiv2015

Spin-Polarized Quantum Well States on Bi$_{2-x}$Fe$_x$Se$_3$

Low temperature scanning tunneling microscopy is used to image the doped topological insulator Bi$_{2-x}$Fe$_x$Se$_3$. Interstitial Fe defects allow the detection of quasiparticle interference (QPI), and the reconstruction of the empty state band structure. Quantitative comparison between measured data and density functional theory calculations reveals the unexpected coexistence of quantum well states (QWS) with topological surface states (TSS) on the atomically clean surface of Bi$_{2-x}$Fe$_x$Se$_3$. Spectroscopic measurements quantify the breakdown of linear dispersion due to hexagonal warping. Nonetheless, both QWS and TSS remain spin-polarized and protected from backscattering to almost 1 eV above the Dirac point, suggesting their utility for spin-based applications.

cond-mat.mtrl-sci↗

arXiv2015

Topological Crystalline Insulators and Topological Superconductors: From Concepts to Materials

In this review, we discuss recent progress in the explorations of topological materials beyond topological insulators; specifically, we focus on topological crystalline insulators and bulk topological superconductors. The basic concepts, model Hamiltonians, and novel electronic properties of these new topological materials are explained. The key role of symmetries that underlie their topological properties is elucidated. Key issues in their materials realizations are also discussed.

cond-mat.mtrl-sci↗

arXiv2014

Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3

We detected the spin polarization due to charge flow in the spin non-degenerate surface state of a three dimensional topological insulator by means of an all-electrical method. The charge current in the bulk-insulating topological insulator Bi1.5Sb0.5Te1.7Se1.3 (BSTS) was injected/extracted through a ferromagnetic electrode made of Ni80Fe20, and an unusual current-direction-dependent magnetoresistance gives evidence for the appearance of spin polarization which leads to a spin-dependent resistance at the BSTS/Ni80Fe20 interface. In contrast, our control experiment on Bi2Se3 gave null result. These observations demonstrate the importance of the Fermi-level control for the electrical detection of the spin polarization in topological insulators.

cond-mat.mtrl-sci↗

arXiv2014

Pb_{5}Bi_{24}Se_{41}: A New Member of the Homologous Series Forming Topological Insulator Heterostructures

We have synthesized Pb_{5}Bi_{24}Se_{41}, which is a new member of the (PbSe)_{5}(Bi2Se3)_{3m} homologous series with m = 4. This series of compounds consist of alternating layers of the topological insulator Bi2Se3 and the ordinary insulator PbSe. Such a naturally-formed heterostructure has recently been elucidated to give rise to peculiar quasi-two-dimensional topological states throughout the bulk, and the discovery of Pb_{5}Bi_{24}Se_{41} expands the tunability of the topological states in this interesting homologous series. The trend in the resistivity anisotropy in this homologous series suggests an important role of hybridization of the topological states in the out-of-plane transport.

cond-mat.mtrl-sci↗