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Yoichi Ando

Publications and source records attributed to Yoichi Ando.

At least 73 records · Page 4Linked to original sources

Quantum confinement of the Dirac surface states in topological-insulator nanowires

The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface states. Intriguingly, when a 3D TI is made into a nanowire, a gap opens at the Dirac point due to the quantum confinement, leading to a peculiar Dirac sub-band structure. This gap is useful for, e.g., future Majorana qubits based on TIs. Furthermore, these Dirac sub-bands can be manipulated by a magnetic flux and are an ideal platform for generating stable Majorana zero modes (MZMs), which play a key role in topological quantum computing. However, direct evidence for the Dirac sub-bands in TI nanowires has not been reported so far. Here we show that by growing very thin ($\sim$40-nm diameter) nanowires of the bulk-insulating topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ and by tuning its chemical potential across the Dirac point with gating, one can unambiguously identify the Dirac sub-band structure. Specifically, the resistance measured on gate-tunable four-terminal devices was found to present non-equidistant peaks as a function of the gate voltage, which we theoretically show to be the unique signature of the quantum-confined Dirac surface states. These TI nanowires open the way to address the topological mesoscopic physics, and eventually the Majorana physics when proximitised by an $s$-wave superconductor.

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Uniaxial-strain Control of Nematic Superconductivity in Sr$_{x}$Bi$_2$Se$_3$

Nematic states are characterized by rotational symmetry breaking without translational ordering. Recently, nematic superconductivity, in which the superconducting gap spontaneously lifts the rotational symmetry of the lattice, has been discovered. However the pairing mechanism and the mechanism determining the nematic orientation remain unresolved. A first step is to demonstrate control of the nematicity, through application of an external symmetry-breaking field, to determine the sign and strength of coupling to the lattice. Here, we report for the first time control of the nematic orientation of the superconductivity of Sr$_x$Bi$_2$Se$_3$, through externally-applied uniaxial stress. The suppression of subdomains indicates that it is the $Δ_{4y}$ state that is most favoured under compression along the basal Bi-Bi bonds. These results provide an inevitable step towards understanding the microscopic origin of the unique topological nematic superconductivity.

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Generalized Anderson's theorem for superconductors derived from topological insulators

A well-known result in unconventional superconductivity is the fragility of nodal superconductors against nonmagnetic impurities. Despite this common wisdom, Bi$_2$Se$_3$-based topological superconductors have recently displayed unusual robustness against disorder. Here we provide a theoretical framework which naturally explains what protects Cooper pairs from strong scattering in complex superconductors. Our analysis is based on the concept of superconducting fitness and generalizes the famous Anderson's theorem into superconductors having multiple internal degrees of freedom. For concreteness, we report on the extreme example of the Cu$_x$(PbSe)$_5$(Bi$_2$Se$_3$)$_6$ superconductor, where thermal conductivity measurements down to 50 mK not only give unambiguous evidence for the existence of nodes, but also reveal that the energy scale corresponding to the scattering rate is orders of magnitude larger than the superconducting energy gap. This provides a most spectacular case of the generalized Anderson's theorem protecting a nodal superconductor.

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Evidence for bulk nodal loops and universality of Dirac-node arc surface states in ZrGeXc (Xc = S, Se, Te)

We have performed angle-resolved photoemission spectroscopy (ARPES) on layered ternary compounds ZrGeXc (Xc = S, Se, and Te) with square Ge lattices. ARPES measurements with bulk-sensitive soft-x-ray photons revealed a quasi-two-dimensional bulk-band structure with the bulk nodal loops protected by glide mirror symmetry of the crystal lattice. Moreover, high-resolution ARPES measurements near the Fermi level with vacuum-ultraviolet photons combined with first-principles band-structure calculations elucidated a Dirac-node-arc surface state traversing a tiny spin-orbit gap associated with the nodal loops. We found that this surface state commonly exists in ZrGeXc despite the difference in the shape of nodal loops. The present results suggest that the spin-orbit coupling and the multiple nodal loops cooperatively play a key role in creating the exotic Dirac-node-arc surface states in this class of topological line-node semimetals.

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Nano-mosaic of Topological Dirac States on the Surface of Pb5Bi24Se41 Observed by Nano-ARPES

We have performed scanning angle-resolved photoemission spectroscopy with a nanometer-sized beam spot (nano-ARPES) on the cleaved surface of Pb5Bi24Se41, which is a member of the (PbSe)5(Bi2Se3)3m homologous series (PSBS) with m = 4 consisting of alternate stacking of the topologically-trivial insulator PbSe bilayer and four quintuple layers (QLs) of the topological insulator Bi2Se3. This allows us to visualize a mosaic of topological Dirac states at a nanometer scale coming from the variable thickness of the Bi2Se3 nano-islands (1-3 QLs) that remain on top of the PbSe layer after cleaving the PSBS crystal, because the local band structure of topological origin changes drastically with the thickness of the Bi2Se3 nano-islands. A comparison of the local band structure with that in ultrathin Bi2Se3 films on Si(111) gives us further insights into the nature of the observed topological states. This result demonstrates that nano-ARPES is a very useful tool for characterizing topological heterostructures.

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Large positive magneto-conductivity at microwave frequencies in the compensated topological insulator BiSbTeSe2

The bulk electronic properties of compensated topological insulators are strongly affected by the self-organized formation of charge puddles at low temperature, but their response in the microwave frequency range is little studied. We employed broadband impedance spectroscopy up to 5 GHz to address the ac transport properties of well-compensated BiSbTeSe2, where charge puddles are known to form as metallic entities embedded in an insulating host. It turns out that the average puddle size sets the characteristic frequency cut-off in the GHz range, across which the insulating dc behavior is separated from a metal-like high-frequency response of delocalized carriers within the puddles. The cut-off frequency is found to be controlled by a magnetic field, giving rise to a large positive magneto-conductivity observable only in the GHz range. This curious phenomenon is driven by the Zeeman energy which affects the local band filling in the disordered potential landscape to enhance the puddle size.

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Nematic Superconductivity in Cu1.5(PbSe)5(Bi2Se3)6

After the discovery of nematic topological superconductivity in CuxBi2Se3, carrier-doped topological insulators are established as a fertile ground for topological superconductors. The superconductor Cu1.5(PbSe)5(Bi2Se3)6 (CPSBS) contains Bi2Se3 blocks as a constitutional unit, but its superconducting gap appears to have nodes [S. Sasaki et al., Phys. Rev. B 90, 220504 (2014)], which is in contrast to the fully-opened gap in CuxBi2Se3 and the relation between the two superconductors remained an open question. Here we report our observation of clear two-fold symmetry in the in-plane magnetic-field-direction dependencies of the upper critical field and of the specific heat of CPSBS, where the direction of the maxima, which is different from that in CuxBi2Se3, indicates that the gap nodes are located in the mirror plane of the crystal lattice. This means that the topological nematic state with mirror-symmetry-protected nodes is realized in CPSBS.

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Phonon mode calculations and Raman spectroscopy of the bulk-insulating topological insulator BiSbTeSe$_2$

The tetradymite compound BiSbTeSe$_2$, is one of the most bulk-insulating three-dimensional topological insulators, which makes it important in the topological insulator research. It is a member of the solid-solution system Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$, for which the local crystal structure, such as the occupation probabilities of each atomic site, is not well understood. We have investigated the temperature and polarization dependent spontaneous Raman scattering in BiSbTeSe$_2$, revealing a much higher number of lattice vibrational modes than predicted by group theoretical considerations for the space group R$\bar{3}$m corresponding to an ideally random solid-solution situation. The density functional calculations of phonon frequencies show a very good agreement with experimental data for parent material Bi$_2$Te$_3$, where no disorder effects were found. In comparison to Bi$_2$Te$_3$ the stacking disorder in BiSbTeSe$_2$, causes a discrepancy between theory and experiment. Combined analysis of experimental Raman spectra and DFT calculated phonon spectra for different types of atomic orders showed coexistence of different sequences of layers in the material and that those with Se in the center and a local order of Se-Bi-Se-Sb-Te, are the most favored.

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Observation of Chiral Fermions with a Large Topological Charge and and Associated Fermi-Arc Surface States in CoSi

Topological semimetals materialize a new state of quantum matter where massless fermions protected by a specific crystal symmetry host exotic quantum phenomena. Distinct from well-known Dirac and Weyl fermions, structurally-chiral topological semimetals are predicted to host new types of massless fermions characterized by a large topological charge, whereas such exotic fermions are yet to be experimentally established. Here, by using angle-resolved photoemission spectroscopy, we experimentally demonstrate that a transition-metal silicide CoSi hosts two types of chiral topological fermions, spin-1 chiral fermion and double Weyl fermion, in the center and corner of the bulk Brillouin zone, respectively. Intriguingly, we found that the bulk Fermi surfaces are purely composed of the energy bands related to these fermions. We also find the surface states connecting the Fermi surfaces associated with these fermions, suggesting the existence of the predicted Fermi-arc surface states. Our result provides the first experimental evidence for the chiral topological fermions beyond Dirac and Weyl fermions in condensed-matter systems, and paves the pathway toward realizing exotic electronic properties associated with unconventional chiral fermions.

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Observation of Dirac-like energy band and unusual spectral line shape in quasi-one-dimensional superconductor Tl2Mo6Se6

We have performed high-resolution angle-resolved photoemission spectroscopy of the quasi-one-dimensional (1D) topological superconductor candidate Tl2Mo6Se6 consisting of weakly-coupled Mo3Se3 chains. We found a quasi-1D Fermi surface arising from a Dirac-like energy band, which is associated with the nonsymmorphic screw symmetry of the chains and predicted to trigger topological superconductivity. We observed a significant spectral-weight reduction over a wide energy range, together with a tiny Fermi-edge structure which exhibits a signature of a superconducting-gap opening below the superconducting-transition temperature. The observed quasi-1D Dirac-like band and its very small density of states point to an unconventional nature of superconductivity in Tl2Mo6Se6.

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Observation of band crossings protected by nonsymmorphic symmetry in the layered ternary telluride Ta3SiTe6

We have performed angle-resolved photoemission spectroscopy of layered ternary telluride Ta3SiTe6 which is predicted to host nodal lines associated with nonsymmorphic crystal symmetry. We found that the energy bands in the valence-band region show Dirac-like dispersions which present a band degeneracy at the R point of the bulk orthorhombic Brillouin zone. This band degeneracy extends one-dimensionally along the whole SR high-symmetry line, forming the nodal lines protected by the glide mirror symmetry of the crystal. We also observed a small band splitting near EF which supports the existence of hourglass-type dispersions predicted by the calculation. The present results provide an excellent opportunity to investigate the interplay between exotic nodal fermions and nonsymmorphic crystal symmetry.

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Scanning tunneling spectroscopy investigations of superconducting-doped topological insulators: Experimental pitfalls and results

Recently the doping of topological insulators has attracted significant interest as a potential route towards topological superconductivity. Because many experimental techniques lack sufficient surface sensitivity, however, a definite proof of the coexistence of topological surface states and surface superconductivity is still outstanding. Here we report on highly surface sensitive scanning tunneling microscopy (STM) and spectroscopy (STS) experiments performed on Tl-doped Bi$_2$Te$_3$, a three-dimensional topological insulator which becomes superconducting in the bulk at $T_{\rm C} = 2.3$\,K. Landau level spectroscopy as well as quasiparticle interference mapping clearly demonstrated the presence of a topological surface state with a Dirac point energy $E_{\textrm{D}} = -(118 \pm 1)$\,meV and a Dirac velocity $v_{\textrm{D}} = (4.7 \pm 0.1)\cdot 10^{5}$\,m/s. Tunneling spectra often show a superconducting gap, but temperature- and field-dependent measurements show that both $T_{\rm C}$ and $μ_0 H_{\rm C}$ strongly deviate from the corresponding bulk values. Furthermore, in spite of acritical field value which clearly points to type-II superconductivity, no Abrikosov lattice could be observed. Experiments performed on normal-metallic Ag(111) prove that the gapped spectrum is only caused by superconducting tips, probably caused by a gentle crash with the sample surface during approach. Nearly identical results were found for the intrinsically n-type compound Nb-doped Bi$_2$Se$_3$. Our results suggest that the superconductivity in superconducting-doped V-VI topological insulators does not extend to the surface where the topological surface state is located.

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Anomalous Fraunhofer patterns in gated Josephson junctions based on the bulk-insulating topological insulator BiSbTeSe2

One-dimensional Majorana modes are predicated to form in Josephson junctions based on three-dimensional topological insulators (TIs). While observations of supercurrents in Josephson junctions made on bulk-insulating TI samples are recently reported, the Fraunhofer patters observed in such TI-based Josephson junctions, which sometimes present anomalous features, are still not well understood. Here we report our study of highly gate-tunable TI-based Josephson junctions made of one of the most bulk-insulating TI materials, BiSbTeSe2, and Al. The Fermi level can be tuned by gating across the Dirac point, and the high transparency of the Al/BiSbTeSe2 interface is evinced by a high characteristic voltage and multiple Andreev reflections with peak indices reaching 12. Anomalous Fraunhofer patterns with missing lobes were observed in the entire range of gate voltage. We found that, by employing an advanced fitting procedure to use the maximum entropy method in a Monte Carlo algorithm, the anomalous Fraunhofer patterns are explained as a result of inhomogeneous supercurrent distributions on the TI surface in the junction. Besides establishing a highly promising fabrication technology, this work clarifies one of the important open issues regarding TI-based Josephson junctions.

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Charge puddles in the bulk and on the surface of the topological insulator BiSbTeSe$_2$ studied by scanning tunneling microscopy and optical spectroscopy

The topological insulator BiSbTeSe$_2$ corresponds to a compensated semiconductor in which strong Coulomb disorder gives rise to the formation of charge puddles, i.e., local accumulations of charge carriers, both in the bulk and on the surface. Bulk puddles are formed if the fluctuations of the Coulomb potential are as large as half of the band gap. The gapless surface, in contrast, is sensitive to small fluctuations but the potential is strongly suppressed due to the additional screening channel provided by metallic surface carriers. To study the quantitative relationship between the properties of bulk puddles and surface puddles, we performed infrared transmittance measurements as well as scanning tunneling microscopy measurements on the same sample of BiSbTeSe$_2$, which is close to perfect compensation. At 5.5 K, we find surface potential fluctuations occurring on a length scale $r_s = 40-50$ nm with amplitude $Γ= 8-14$ meV which is much smaller than in the bulk, where optical measurements detect the formation of bulk puddles. In this nominally undoped compound, the value of $Γ$ is smaller than expected for pure screening by surface carriers, and we argue that this arises most likely from a cooperative effect of bulk screening and surface screening.

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Topological superconductors: a review

This review elaborates pedagogically on the fundamental concept, basic theory, expected properties, and materials realizations of topological superconductors. The relation between topological superconductivity and Majorana fermions are explained, and the difference between dispersive Majorana fermions and a localized Majorana zero mode is emphasized. A variety of routes to topological superconductivity are explained with an emphasis on the roles of spin-orbit coupling. Present experimental situations and possible signatures of topological superconductivity are summarized with an emphasis on intrinsic topological superconductors.

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Gigantic negative magnetoresistance in a disordered topological insulator

With the recent discovery of Weyl semimetals, the phenomenon of negative magnetoresistance (MR) is attracting renewed interest. While small negative MR can occur due to the suppression of spin scattering or weak localization, large negative MR is rare in materials, and when it happens, it is usually related to magnetism. The large negative MR in Weyl semimetals is peculiar in that it is unrelated to magnetism and comes from chiral anomaly. Here we report that there is a new mechanism for large negative MR which is not related to magnetism but is related to disorder. In the newly-synthesized bulk-insulating topological insulator TlBi$_{0.15}$Sb$_{0.85}$Te$_2$, we observed gigantic negative MR reaching 98% in 14 T at 10 K, which is unprecedented in a nonmagnetic system. Supported by numerical simulations, we argue that this phenomenon is likely due to the Zeeman effect on a barely percolating current path formed in the disordered bulk. Since disorder can also lead to non-saturating linear MR in Ag$_{2+δ}$Se, the present finding suggests that disorder engineering in narrow-gap systems is useful for realizing gigantic MR in both positive and negative directions.

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Majorana qubits in topological insulator nanoribbon architecture

We describe designs for the realization of topological Majorana qubits in terms of proximitized topological insulator nanoribbons pierced by a uniform axial magnetic field. This platform holds promise for particularly robust Majorana bound states, with easily manipulable inter-state couplings. We propose proof-of-principle experiments for initializing, manipulating, and reading out Majorana box qubits defined in floating devices dominated by charging effects. We argue that the platform offers design advantages which make it particularly suitable for extension to qubit network structures realizing a Majorana surface code.

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Planar Hall effect from the surface of topological insulators

A prominent feature of topological insulators (TIs) is the surface states comprising of spin-nondegenerate massless Dirac fermions. Recent technical advances have made it possible to address the surface transport properties of TI thin films while tuning the Fermi levels of both top and bottom surfaces across the Dirac point by electrostatic gating. This opened the window for studying the spin-nondegenerate Dirac physics peculiar to TIs. Here we report our discovery of a novel planar Hall effect (PHE) from the TI surface, which results from a hitherto-unknown resistivity anisotropy induced by an in-plane magnetic field. This effect is observed in dual-gated devices of bulk-insulating Bi$_{2-x}$Sb$_{x}$Te$_{3}$ thin films, in which both top and bottom surfaces are gated. The origin of PHE is the peculiar time-reversal-breaking effect of an in-plane magnetic field, which anisotropically lifts the protection of surface Dirac fermions from back-scattering. The key signature of the field-induced anisotropy is a strong dependence on the gate voltage with a characteristic two-peak structure near the Dirac point which is explained theoretically using a self-consistent T-matrix approximation. The observed PHE provides a new tool to analyze and manipulate the topological protection of the TI surface in future experiments.

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