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Yong P. Chen

Publications and source records attributed to Yong P. Chen.

At least 55 records · Page 3Linked to original sources

Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nano-Cavity

Two-dimensional hexagonal boron nitride (hBN) has been known to host a variety of quantum emitters with properties suitable for a broad range of quantum photonic applications. Among them, the negatively charged boron vacancy (VB-) defect with optically addressable spin states has emerged recently due to its potential use in quantum sensing. Compared to spin defects in bulk crystals, VB- preserves its spin coherence properties when placed at nanometer-scale distances from the hBN surface, enabling nanometer-scale quantum sensing. On the other hand, the low quantum efficiency of VB- has hindered its use in practical applications. Several studies have reported improving the overall quantum efficiency of VB- defects using plasmonic effects; however, the overall enhancements of up to 17 times reported to date are relatively modest. In this study, we explore and demonstrate much higher emission enhancements of VB- with ultralow-loss nano-patch antenna (NPA) structures. An overall intensity enhancement of up to 250 times is observed for NPA-coupled VB- defects. Since the laser spot exceeds the area of the NPA, where the enhancement occurs, the actual enhancement provided by the NPA is calculated to be ~1685 times, representing a significant increase over the previously reported results. Importantly, the optically detected magnetic resonance (ODMR) contrast is preserved at such exceptionally strong enhancement. Our results not only establish NPA-coupled VB- defects as high-resolution magnetic field sensors operating at weak laser powers, but also provide a promising approach to obtaining single VB- defects.

physics.optics↗

Gate-tunable anomalous Hall effect in stacked van der Waals ferromagnetic insulator - topological insulator heterostructures

The search of novel topological phases, such as the quantum anomalous Hall insulator (QAHI) or the axion insulator, has motivated different schemes to introduce magnetism into topological insulators. One scheme is to introduce ferromagnetic dopants in topological insulators. However, it is generally challenging and requires carefully engineered growth/heterostructures or relatively low temperatures to observe the QAHI due to issues such as the added disorder with ferromagnetic dopants. Another promising scheme is using the magnetic proximity effect with a magnetic insulator to magnetize the topological insulator. Most of these heterostructures are synthesized so far by growth techniques such as molecular beam epitaxy and metallic organic chemical vapor deposition. These are not readily applicable to allow mixing and matching many of the available ferromagnetic and topological insulators due to difference in growth conditions and lattice mismatch. Here, we demonstrate that the magnetic proximity effect can still be obtained in stacked heterostructures assembled via the dry transfer of exfoliated micrometer-sized thin flakes of van der Waals topological insulator and magnetic insulator materials (BiSbTeSe2/Cr2Ge2Te6), as evidenced in the observation of an anomalous Hall effect (AHE). Furthermore, devices made from these heterostructures can allow modulation of the AHE when controlling the carrier density via electrostatic gating. These results show that simple mechanical transfer of magnetic van der Waals materials provides another possible avenue to magnetize topological insulators by magnetic proximity effect, a key step towards further realization of novel topological phases such as QAHI and axion insulators.

cond-mat.mes-hall↗

Nuclear spin polarization and control in a van der Waals material

Van der Waals layered materials are a focus of materials research as they support strong quantum effects and can easily form heterostructures. Electron spins in van der Waals materials played crucial roles in many recent breakthroughs, including topological insulators, two-dimensional (2D) magnets, and spin liquids. However, nuclear spins in van der Waals materials remain an unexplored quantum resource. Here we report the first demonstration of optical polarization and coherent control of nuclear spins in a van der Waals material at room temperature. We use negatively-charged boron vacancy ($V_B^-$) spin defects in hexagonal boron nitride to polarize nearby nitrogen nuclear spins. Remarkably, we observe the Rabi frequency of nuclear spins at the excited-state level anti-crossing of $V_B^-$ defects to be 350 times larger than that of an isolated nucleus, and demonstrate fast coherent control of nuclear spins. We also detect strong electron-mediated nuclear-nuclear spin coupling that is 5 orders of magnitude larger than the direct nuclear spin dipolar coupling, enabling multi-qubit operations. Nitrogen nuclear spins in a triangle lattice will be suitable for large-scale quantum simulation. Our work opens a new frontier with nuclear spins in van der Waals materials for quantum information science and technology.

quant-ph↗

Bose-Einstein Condensate on a Synthetic Topological Hall Cylinder

The interplay between matter particles and gauge fields in physical spaces with nontrivial geometries can lead to novel topological quantum matter. However, detailed microscopic mechanisms are often obscure, and unconventional spaces are generally challenging to construct in solids. Highly controllable atomic systems can quantum simulate such physics, even those inaccessible in other platforms. Here, we realize a Bose-Einstein condensate (BEC) on a synthetic cylindrical surface subject to a net radial synthetic magnetic flux. We observe a symmetry-protected topological band structure emerging on this Hall cylinder but disappearing in the planar counterpart. BEC's transport observed as Bloch oscillations in the band structure is analogous to traveling on a Möbius strip in the momentum space, revealing topological band crossings protected by a nonsymmorphic symmetry. We demonstrate that breaking this symmetry induces a topological transition manifested as gap opening at band crossings, and further manipulate the band structure and BEC's transport by controlling the axial synthetic magnetic flux. Our work opens the door for using atomic quantum simulators to explore intriguing topological phenomena intrinsic in unconventional spaces.

cond-mat.quant-gas↗

Constructive Quantum Interference in a Photo-Chemical Reaction of $^{87}$Rb Bose Einstein Condensate

Interferences emerge when multiple pathways coexist together leading towards the same result. A Recent study by Blasing and coworkers [PRL 121(7):073202] showed that in a photo-association reaction of Raman dressed spin orbit coupled $^{87}$Rb Bose Einstein Condensate when the reactant spin state is prepared in a coherent superposition of multiple bare spin states it leads to a destructive interference between reaction pathways. Here we report a theoretical study for a reaction scheme which leads to constructive quantum interference. This is achieved by changing the reactive scattering channel in the reaction. As the origin of coherent control comes from the spin part of the wavefunction it is sufficient to use radio frequency coupling to achieve the superposition state. Our results show that interferences can be used as a resource for the coherent control of photo-chemical reactions. The approach is general and can be employed to study a wide spectra of chemical reactions in the ultracold regime.

quant-ph↗

High-contrast plasmonic-enhanced shallow spin defects in hexagonal boron nitride for quantum sensing

The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. However, the photoluminescence and the contrast of the optically detected magnetic resonance (ODMR) of hBN spin defects are relatively low so far, which limits their sensitivity. Here we report a record-high ODMR contrast of 46$\%$ at room temperature, and simultaneous enhancement of the photoluminescence of hBN spin defects by up to 17-fold by the surface plasmon of a gold-film microwave waveguide. Our results are obtained with shallow boron vacancy spin defects in hBN nanosheets created by low-energy He$^+$ ion implantation, and a gold-film microwave waveguide fabricated by photolithography. We also explore the effects of microwave and laser powers on the ODMR, and improve the sensitivity of hBN spin defects for magnetic field detection. Our results support the promising potential of hBN spin defects for nanoscale quantum sensing.

quant-ph↗

Electric field control of interaction between magnons and quantum spin defects

Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of magnon-QSD coupling to such systems by integrating ferromagnet-ferroelectric multiferroic with nitrogen-vacancy (NV) center spins. Combining quantum relaxometry with ferromagnetic resonance measurements and analytical modeling, we reveal that the observed electric-field tuning results from ferroelectric polarization control of the magnon-generated fields at the NV. Exploiting the demonstrated control, we also propose magnon-enhanced hybrid electric field sensors with improved sensitivity.

cond-mat.mes-hall↗

Epitaxial Growth of Monolayer PdTe2 and Patterned PtTe2 by Direct Tellurization of Pd and Pt surfaces

Two-dimensional (2D) palladium ditelluride (PdTe2) and platinum ditelluride (PtTe2) are two Dirac semimetals which demonstrate fascinating quantum properties such as superconductivity, magnetism and topological order, illustrating promising applications in future nanoelectronics and optoelectronics. However, the synthesis of their monolayers is dramatically hindered by strong interlayer coupling and orbital hybridization. In this study, an efficient synthesis method for monolayer PdTe2 and PtTe2 is demonstrated. Taking advantages of the surface reaction, epitaxial growth of large-area and high quality monolayers of PdTe2 and patterned PtTe2 is achieved by direct tellurization of Pd(111) and Pt(111). A well-ordered PtTe2 pattern with Kagome lattice formed by Te vacancy arrays is successfully grown. Moreover, multilayer PtTe2 can be also obtained and potential excitation of Dirac plasmons is observed. The simple and reliable growth procedure of monolayer PdTe2 and patterned PtTe2 gives unprecedented opportunities for investigating new quantum phenomena and facilitating practical applications in optoelectronics.

cond-mat.mtrl-sci↗

Spin-momentum entanglement in a Bose-Einstein condensate

Entanglement is at the core of quantum information processing and may prove essential for quantum speed-up. Inspired by both theoretical and experimental studies of spin-momentum coupling in systems of ultra-cold atoms, we investigate the entanglement between the spin and momentum degrees of freedom of an optically trapped BEC of $^{87}$Rb atoms. We consider entanglement that arises due to the coupling of these degrees of freedom induced by Raman and radio-frequency fields and examine its dependence on the coupling parameters by evaluating von Neumann entropy as well as concurrence as measures of the entanglement attained. Our calculations reveal that under proper experimental conditions significant spin-momentum entanglement can be obtained, with von Neumann entropy of 80% of the maximum attainable value. Our analysis sheds some light on the prospects of using BECs for quantum information applications.

quant-ph↗

Opposite current-induced spin polarizations in bulk-metallic Bi2Se3 and bulk-insulating Bi2Te2Se topological insulator thin flakes

One of the most fundamental and exotic properties of 3D topological insulators (TIs) is spin-momentum-locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other possible conduction channels, such as a trivial two-dimensional electron gas (2DEG) with strong Rashba type spin-orbit interaction (SOI) and bulk conducting states that may possess a spin Hall effect (SHE), can coexist in 3D TIs, making determining the origin of the current induced spin polarization (CISP) difficult. In this work, we directly compared the CISP between bulk-insulating Bi2Te2Se (BTS221) and bulk-metallic Bi2Se3 thin flakes using spin potentiometry. In the bulk insulating BTS221, the observed CISP has a sign consistent with the expected helicity of the SML of the TSS, but an opposite sign to its calculated bulk spin Hall conductivity (SHC). However, compared to BTS221, an opposite CISP is observed in the bulk metallic Bi2Se3, consistent instead with both the expectations of its Rashba-Edelstein effect of the band-bending induced 2DEG and bulk spin Hall Effect (SHE). Our results provide an electrical way to distinguish the TSS from other possible conducting channels in spin transport measurements on 3D TIs, and open ways for the potential applications in charge-spin conversion devices.

cond-mat.mes-hall↗

Gate field effects on the topological insulator BiSbTeSe2 interface

Interfaces between two topological insulators are of fundamental interest in condensed matter physics. Inspired by experimental efforts, we study interfacial processes between two slabs of BiSbTeSe2 (BSTS) via first principles calculations. Topological surface states are absent for the BSTS interface at its equilibrium separation, but our calculations show that they appear if the inter-slab distance is greater than 6 Ang. More importantly, we find that topological interface states can be preserved by inserting two or more layers of hexagonal boron nitride between the two BSTS slabs. In experiments, the electric current tunneling through the interface is insensitive to back gate voltage when the bias voltage is small. Using a first-principles based method that allows us to simulate gate field, we show that at low bias the extra charge induced by a gate voltage resides on the surface that is closest to the gate electrode, leaving the interface almost undoped. This provides clues to understand the origin of the observed insensitivity of transport properties to back voltage at low bias. Our study resolves a few questions raised in experiment, which does not yet offer a clear correlation between microscopic physics and transport data. We provide a road map for the design of vertical tunneling junctions involving the interface between two topological insulators.

cond-mat.mtrl-sci↗

Tuning insulator-semimetal transitions in 3D topological insulator thin films by inter-surface hybridization and in-plane magnetic fields

A pair of Dirac points (analogous to a vortex-antivortex pair) associated with opposite topological numbers (with $\pmπ$ Berry phases) can be merged together through parameter tuning and annihilated to gap the Dirac spectrum, offering a canonical example of a topological phase transition. Here, we report transport studies on thin films of BiSbTeSe$_2$ (BSTS), which is a 3D TI that hosts spin-helical gapless (semi-metallic) Dirac fermion surface states (SS) for sufficiently thick samples, with an observed resistivity close to $h/4e^2$ at the charge neutral point. When the sample thickness is reduced to $\sim$10 nm thick, the Dirac cones from the top and bottom surfaces can hybridize (analogous to a "merging" in the real space) and become gapped to give a trivial insulator. Furthermore, we observe that an in-plane magnetic field can drive the system again towards a metallic behavior, with a prominent negative magnetoresistance (MR, up to $\sim$$-$95\%) and a temperature-insensitive resistivity close to $h/2e^2$ at the charge neutral point. The observation is interpreted in terms of a predicted effect of an in-plane magnetic field to reduce the hybridization gap (which, if small enough, may be smeared by disorder and a metallic behavior). A sufficiently strong magnetic field is predicted to restore and split again the Dirac points in the momentum space, inducing a distinct 2D topological semimetal (TSM) phase with 2 single-fold Dirac cones of opposite spin-momentum windings.

cond-mat.mes-hall↗

Spin current generation and relaxation in a quenched spin-orbit-coupled Bose-Einstein condensate

Understanding the effects of spin-orbit coupling (SOC) and many-body interactions on spin transport is important in condensed matter physics and spintronics. This topic has been intensively studied for spin carriers such as electrons but barely explored for charge-neutral bosonic quasiparticles (including their condensates), which hold promises for coherent spin transport over macroscopic distances. Here, we explore the effects of synthetic SOC (induced by optical Raman coupling) and atomic interactions on the spin transport in an atomic Bose-Einstein condensate (BEC), where the spin-dipole mode (SDM, actuated by quenching the Raman coupling) of two interacting spin components constitutes an alternating spin current. We experimentally observe that SOC significantly enhances the SDM damping while reducing the thermalization (the reduction of the condensate fraction). We also observe generation of BEC collective excitations such as shape oscillations. Our theory reveals that the SOC-modified interference, immiscibility, and interaction between the spin components can play crucial roles in spin transport.

cond-mat.quant-gas↗

Highly skewed current-phase relation in superconductor-topological insulator-superconductor Josephson junctions

Three-dimensional topological insulators (TI's) in proximity with superconductors are expected to exhibit exotic phenomena such as topological superconductivity (TSC) and Majorana bound states (MBS), which may have applications in topological quantum computation. In superconductor-TI-superconductor Josephson junctions, the supercurrent versus the phase difference between the superconductors, referred to as the current-phase relation (CPR), reveals important information including the nature of the superconducting transport. Here, we study the induced superconductivity in gate-tunable Josephson junctions (JJs) made from topological insulator BiSbTeSe2 with superconducting Nb electrodes. We observe highly skewed (non-sinusoidal) CPR in these junctions. The critical current, or the magnitude of the CPR, increases with decreasing temperature down to the lowest accessible temperature (T ~ 20 mK), revealing the existence of low-energy modes in our junctions. The gate dependence shows that close to the Dirac point the CPR becomes less skewed, indicating the transport is more diffusive, most likely due to the presence of electron/hole puddles and charge inhomogeneity. Our experiments provide strong evidence that superconductivity is induced in the highly ballistic topological surface states (TSS) in our gate-tunable TI- based JJs. Furthermore, the measured CPR is in good agreement with the prediction of a model which calculates the phase dependent eigenstate energies in our system, considering the finite width of the electrodes as well as the TSS wave functions extending over the entire circumference of the TI.

cond-mat.supr-con↗

Anomalous low-temperature enhancement of supercurrent in topological-insulator nanoribbon Josephson junctions: evidence for low-energy Andreev bound states

We report anomalous enhancement of the critical current at low temperatures in gate-tunable Josephson junctions made from topological insulator BiSbTeSe$_2$ nanoribbons with superconducting Nb electrodes. In contrast to conventional junctions, as a function of the decreasing temperature $T$, the increasing critical current $I_c$ exhibits a sharp upturn at a temperature $T_*$ around 20$\%$ of the junction critical temperatures for several different samples and various gate voltages. The $I_c$ vs. $T$ demonstrates a short junction behavior for $T>T_*$, but crosses over to a long junction behavior for $T<T_*$ with an exponential $T$-dependence $I_c \propto \exp\big(-k_B T/δ\big)$, where $k_B$ is the Boltzmann constant. The extracted characteristic energy-scale $δ$ is found to be an order of magnitude smaller than the induced superconducting gap of the junction. We attribute the long-junction behavior with such a small $δ$ to low-energy Andreev bound states (ABS) arising from winding of the electronic wavefunction around the circumference of the topological insulator nanoribbon (TINR). Our TINR-based Josephson junctions with low-energy ABS are promising for future topologically protected devices that may host exotic phenomena such as Majorana fermions.

cond-mat.supr-con↗

Transport measurements in twisted bilayer graphene: Electron-phonon coupling and Landau level crossing

We investigate electronic transport in twisted bilayer graphene (tBLG) under variable temperatures ($T$), carrier densities ($n$), and transverse magnetic fields, focusing on samples with small-twist-angles ($θ$). These samples show prominent signatures associated with the van Hove singularities (VHSs) and superlattice-induced mini-gaps (SMGs). Temperature-dependent field effect measurement shows that the difference between temperature-dependent resistivity and residual resistivity, $ρ_{xx}(n,T) - ρ_{0}(n)$, follows $~T^β$ for $n$ between the main Dirac point (DP) and SMG. The evolution of the temperature exponent $β$ with $n$ exhibits a W-shaped dependence, with minima of $β$ ~0.9 near the VHSs and maxima of $β$ ~1.7 toward the SMGs. This W-shaped behavior can be qualitatively understood with a theoretical picture that considers both the Fermi surface smearing near the VHSs and flexural-acoustic phonon scattering. In the quantum Hall regime, we observe only Landau level crossings in the massless Dirac spectrum originating from the main DP but not in the parabolic band near the SMG. Such crossings enable the measurement of an enhanced interlayer dielectric constant, attributed to a reduced Fermi velocity. Moreover, we measure the Fermi velocity, interlayer coupling strength, VHS energy relative to the DP, and gap size of SMG, four important parameters used to describe the peculiar band structure of the small-$θ$ tBLG.

cond-mat.mes-hall↗

Observation of Quantum Interference and Coherent Control in a Photochemical Reaction

Coherent control of reactants remains a longstanding challenge in quantum chemistry. In particular, we have studied laser-induced molecular formation (photoassociation) in a Raman-dressed spin-orbit-coupled 87Rb Bose-Einstein condensate, whose spin quantum state is a superposition of multiple bare spin components. In contrast to the notably different photoassociation-induced fractional atom losses observed for the bare spin components of a statistical mixture, a superposition state with a comparable spin composition displays the same fractional loss on every spin component. We interpret this as the superposition state itself undergoing photoassociation. For superposition states induced by a large Raman coupling and zero Raman detuning, we observe a nearly complete suppression of the photoassociation rate. This suppression is consistent with a model based upon quantum destructive interference between two photoassociation pathways for colliding atoms with different spin combinations. This model also explains the measured dependence of the photoassociation rate on the Raman detuning at a moderate Raman coupling. Our work thus suggests that preparing atoms in quantum superpositions may represent a powerful new technique to coherently control photochemical reactions.

quant-ph↗

Stable emission and fast optical modulation of quantum emitters in boron nitride nanotubes

Atom-like defects in two-dimensional (2D) hexagonal boron nitride (hBN) have recently emerged as a promising platform for quantum information science. Here we investigate single-photon emissions from atomic defects in boron nitride nanotubes (BNNTs). We demonstrate the first optical modulation of the quantum emission from BNNTs with a near-infrared laser. This one-dimensional system displays bright single-photon emission as well as high stability at room temperature and is an excellent candidate for optomechanics. The fast optical modulation of single-photon emission from BNNTs shows multiple electronic levels of the system and has potential applications in optical signal processing.

quant-ph↗