arXiv subjects

Yong P. Chen

Publications and source records attributed to Yong P. Chen.

At least 73 records · Page 4Linked to original sources

arXiv2018

Towards the manipulation of topological states of matter: A perspective from electron transport

The introduction of topological invariants, ranging from insulators to metals, has provided new insights into the traditional classification of electronic states in condensed matter physics. A sudden change in the topological invariant at the boundary of a topological nontrivial system leads to the formation of exotic surface states that are dramatically different from its bulk. In recent years, significant advancements in the exploration of the physical properties of these topological systems and regarding device research related to spintronics and quantum computation have been made. Here, we review the progress of the characterization and manipulation of topological phases from the electron transport perspective and also the intriguing chiral/Majorana states that stem from them. We then discuss the future directions of research into these topological states and their potential applications.

cond-mat.mes-hall↗

arXiv2017

Gate-tunable supercurrent and multiple Andreev reflections in a superconductor-topological insulator nanoribbon-superconductor hybrid device

We report on the observation of gate-tunable proximity-induced superconductivity and multiple Andreev reflections (MAR) in a bulk-insulating BiSbTeSe$_2$ topological insulator nanoribbon (TINR) Josephson junction (JJ) with superconducting Nb contacts. We observe a gate-tunable critical current ($I_C$) for gate voltages ($V_g$) above the charge neutrality point ($V_{CNP}$), with $I_C$ as large as 430 nA. We also observe MAR peaks in the differential conductance ($dI/dV$) versus DC voltage ($V_{dc}$) across the junction corresponding to sub-harmonic peaks (at $V_{dc} = V_n = 2Δ_{Nb}/en$, where $Δ_{Nb}$ is the superconducting gap of the Nb contacts and $n$ is the sub-harmonic order). The sub-harmonic order, $n$, exhibits a $V_g$-dependence and reaches $n = 13$ for $V_g = 40$ V, indicating the high transparency of the Nb contacts to TINR. Our observations pave the way toward exploring the possibilities of using TINR in topologically protected devices that may host exotic physics such as Majorana fermions.

cond-mat.mes-hall↗

arXiv2017

Coulomb drag and counterflow Seebeck coefficient in bilayer-graphene double layers

We have fabricated bilayer-graphene double layers separated by a thin ($\sim$20 nm) boron nitride layer and performed Coulomb drag and counterflow thermoelectric transport measurements. The measured Coulomb drag resistivity is nearly three orders smaller in magnitude than the intralayer resistivities. The counterflow Seebeck coefficient is found to be well approximated by the difference between Seebeck coefficients of individual layers and exhibit a peak in the regime where two layers have opposite sign of charge carriers. The measured maximum counterflow power factor is $\sim$ 700 $μ$W/K$^2$cm at room temperature, promising high power output per mass for lightweight thermoelectric applications. Our devices open a possibility for exploring the novel regime of thermoelectrics with tunable interactions between n-type and p-type channels based on graphene and other two-dimensional materials and their heterostructures.

cond-mat.mes-hall↗

arXiv2017

Stueckelberg interferometry using periodically driven spin-orbit coupled Bose-Einstein condensates

We study the single-particle dispersion of a spin-orbit coupled (SOC) Bose-Einstein condensate (BEC) under the periodical modulation of the Raman coupling. This modulation introduces a further coupling of the SOC dressed eigenlevels, thus creating a second generation of modulation-dressed eigenlevels. Theoretical calculations show that these modulation-dressed eigenlevels feature a pair of avoided crossings and a richer spin-momentum locking, which we observe using BEC transport measurements. Furthermore, we use the pair of avoided crossings to engineer a tunable Stueckelberg interferometer that gives interference fringes in the spin polarization of BECs.

physics.atom-ph↗

arXiv2017

High-performance Thermal Interface Material Based on Few-layer Graphene Composite

We developed high-performance thermal interface materials (TIMs) based on few-layer graphene (FLG) composite, where FLG was prepared by the interlayer catalytic exfoliation (ICE) method. We experimentally demonstrated feasibility of FLG composites as TIMs by investigating their thermal and mechanical properties, and reliability. We measured the thermal interface resistance ($R_{int}$) between FLG composite TIMs (FLGTs) and copper and to be 3.2$\pm$1.7 and 4.3$\pm$1.4 $mm^2$K/W for 5 vol.% and 10 vol.% FLGTs at 330 K, respectively, comparable to or even lower than that of many commercial TIMs. In addition, the thermal conductivity ($κ_{TIM}$) of FLGTs is increased by an enhancement factor ($β$) of ~17 as the FLG concentration increases from 0 to 10 vol.%. We also characterized Vickers hardness and glass transition temperature ($T_g$) of our FLGTs. We find that our FLGTs are thermally and mechanically reliable within practical operating temperature and pressure ranges.

cond-mat.mtrl-sci↗

arXiv2017

Electrical and thermal conductivities of reduced graphene oxide/polystyrene composites

The author reports an experimental study of electrical and thermal transport in reduced graphene oxide (RGO)/polystyrene (PS) composites. The electrical conductivity ($σ$) of RGO/PS composites with different RGO concentrations at room temperature shows a percolation behavior with the percolation threshold of ~ 0.25 vol.%. Their temperature-dependent electrical conductivity follows Efros-Shklovskii (ES) variable range hopping (VRH) conduction in the temperature range of 30 to 300 K. The thermal conductivity ($κ$) of composites is enhanced by ~ 90 % as the concentration is increased from 0 to 10 vol.%. The thermal conductivity of composites approximately linearly increases with increasing temperature from 150 to 300 K. Composites with a higher concentration show a stronger temperature dependence in the thermal conductivity.

cond-mat.mtrl-sci↗

arXiv2017

Compressive mechanical response of graphene foams and their thermal resistance with copper interfaces

We report compressive mechanical response of graphene foams (GFs) and the thermal resistance ($R_{TIM}$) between copper (Cu) and GFs, where GFs were prepared by the chemical vapor deposition (CVD) method. We observe that Young's modulus ($E_{GF}$) and compressive strength ($σ_{GF}$) of GFs have a power law dependence on increasing density ($ρ_{GF}$) of GFs. The maximum efficiency of absorbed energy ($η_{max}$) for all GFs during the compression is larger than ~0.39. We also find that a GF with a higher $ρ_{GF}$ shows a larger $η_{max}$. In addition, we observe that the measured $R_{TIM}$ of Cu/GFs at room temperature with a contact pressure of 0.25 MP applied increases from ~50 to ~90 $mm^2K/W$ when $ρ_{GF}$ increases from 4.7 to 31.9 $mg/cm^3$.

cond-mat.mtrl-sci↗

arXiv2017

Large Enhancement of Electronic Thermal Conductivity and Lorenz Number in Topological Insulator Bi2Te2Se Thin Films

Topological insulators (TI) have attracted extensive research effort due to their insulating bulk states but conducting surface states. However, investigation and understanding of thermal transport in topological insulators, particularly the effect of surface states are lacking. In this work, we studied thickness-dependent in-plane thermal conductivity of Bi2Te2Se TI thin films. A large enhancement of both thermal and electrical conductivity was observed for films with thicknesses below 20 nm, which is attributed to the surface states and bulk-insulating nature of these films. Surprisingly, a surface Lorenz number of over 10 times the Sommerfeld value was found. Transport measurements indicated that the surface is near the charge neutrality point when the film thickness is below 20 nm. Possible reasons for the large Lorenz number include the electrical and thermal current decoupling in the surface state Dirac fluid and the bipolar diffusion transport involving surface states.

cond-mat.mes-hall↗

arXiv2017

Two-photon photoassociation spectroscopy of an ultracold heteronuclear molecule

We report on two-photon photoassociation (PA) spectroscopy of ultracold heteronuclear LiRb molecules. This is used to determine the binding energies of the loosely bound levels of the electronic ground singlet and the lowest triplet states of LiRb. We observe strong two-photon PA lines with power broadened line widths greater than 20 GHz at relatively low laser intensity of 30 W/cm$^{2}$. The implication of this observation on direct atom to molecule conversion using stimulated Raman adiabatic passage (STIRAP) is discussed and the prospect for electronic ground state molecule production is theoretically analyzed.

cond-mat.quant-gas↗

arXiv2016

Gate-Tunable and Thickness-dependent Electronic and Thermoelectric Transport in few-layer MoS2

Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of single-layer MoS2, whose band structure features a direct bandgap, in sharp contrast to the indirect bandgap of thicker MoS2. In this paper, we present a systematic study of the thickness-dependent electrical and thermoelectric properties of few-layer MoS2. We observe that the electrical conductivity () increases as we reduce the thickness of MoS2 and peaks at about two layers, with six-time larger conductivity than our thickest sample (23-layer MoS2). Using a back-gate voltage, we modulate the Fermi energy () of the sample where an increase in the Seebeck coefficient () is observed with decreasing gate voltage () towards the subthreshold (OFF state) of the device, reaching as large as in a four-layer MoS2. While previous reports have focused on a single-layer MoS2 and measured Seebeck coefficient in the OFF state, which has vanishing electrical conductivity and thermoelectric power factor (), we show that MoS2-based devices in their ON state can have as large as in the two-layer sample. The increases with decreasing thickness then drops abruptly from double-layer to single-layer MoS2, a feature we suggest as due to a change in the energy dependence of the electron mean-free-path according to our theoretical calculation. Moreover, we show that care must be taken in thermoelectric measurements in the OFF state to avoid obtaining erroneously large Seebeck coefficients when the channel resistance is very high. Our study paves the way towards a more comprehensive examination of the thermoelectric performance of two-dimensional (2D) semiconductors.

cond-mat.mes-hall↗

arXiv2016

Short-range Photoassociation of LiRb

We have observed short-range photoassociation of LiRb to the two lowest vibrational states of the $d\,^3Π$ potential. These $d\,^3Π$ molecules then spontaneously decay to vibrational levels of the $a^3\,Σ^+$ state with generation rates of $\sim10^3$ molecules per second. This is the first observation of many of these $a\,^3Σ^+$ levels. We observe an alternation of the peak heights in the rotational photoassociation spectrum that suggests a $p$-wave shape resonance in the scattering state. Franck-Condon overlap calculations predict that photoassociation to higher vibrational levels of the $d\,^3Π$, in particular the sixth vibrational level, should populate the lowest vibrational level of the $a\,^3Σ^+$ state with a rate as high as $10^4$ molecules per second. These results encourage further work to explain our observed LiRb collisional physics using PECs. This work also motivates an experimental search for short-range photoassociation to other bound molecules, such as the $c\,^3Σ^+$ or $b\,^3Π$, as prospects for preparing ground-state molecules.

physics.atom-ph↗

arXiv2016

Electrical spin injection into graphene from a topological insulator in a van der Waals heterostructure

All-electrical (magnetic-material-free) spin injection is one of the outstanding goals in spintronics. Topological insulators (TIs) have been recognized as a promising electrically controlled spin source thanks to the strong spin-orbit coupling and in particular, the spin-momentum locked topological surface states (TSS) supporting helically spin polarized currents. Many TI materials such as Bi-based chalcogenides are also layered 2D materials and can be incorporated into van der Waals (vdW) coupled heterostructures, opening the possibility of the utilization of TIs for electrical spin injection into other 2D materials. Here, we demonstrate electrical injection of helically spin-polarized current into graphene through a 3D TI in a mechanically stacked heterostructure between Bi2Te2Se (a TI) and chemical vapor deposition (CVD)-grown graphene, using the spin potentiometric measurement. When a dc current is flowing from the TI to graphene, we detect a striking step-like voltage change (spin signal) in both the TI and graphene using ferromagnetic (FM) probes. The sign of the spin signal can be reversed by reversing the direction of the dc bias current, and the corresponding amplitude of the spin signal increases linearly with the bias current, indicative of a current-induced helical spin polarization in both TI and graphene. In contrast, the graphene itself exhibits usual nonlocal spin valve signal when the spins are injected using an FM electrode. We discuss possible origins of the helical spin polarization injected into the graphene in our TI/graphene heterostructure that may include TSS as well as the spin-orbit coupled Rashba states. Our findings show electrical injection of a spin helical current into graphene through a TI and demonstrate TIs as potential spin sources for future spintronic devices wherein spin manipulation is achieved electrically.

cond-mat.mes-hall↗

arXiv2016

Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

Topological insulators are a novel class of quantum matter with a gapped insulating bulk yet gapless spin helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully-tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conducatance quantum at the double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction respectively. Such a system paves the way to explore rich physics ranging from topological magnetoelectric effects to exciton condensation.

cond-mat.mes-hall↗

arXiv2016

In-surface confinement of topological insulator nanowire surface states

The bandstructures of [110] and [001] Bi2Te3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potential. As a result, topological insulator surface states prefer specific surfaces. Therefore, experiments have to be designed carefully not to probe surfaces unfavorable to the surface states (low density of states) and thereby be insensitive to the TI-effects.

cond-mat.mtrl-sci↗

arXiv2015

Experimental Observation of Two Massless Dirac-Fermion Gases in Graphene-Topological Insulator Heterostructure

Graphene and topological insulators (TI) possess two-dimensional Dirac fermions with distinct physical properties. Integrating these two Dirac materials in a single device creates interesting opportunities for exploring new physics of interacting massless Dirac fermions. Here we report on a practical route to experimental fabrication of graphene-Sb2Te3 heterostructure. The graphene-TI heterostructures are prepared by using a dry transfer of chemical-vapor-deposition grown graphene film. ARPES measurements confirm the coexistence of topological surface states of Sb2Te3 and Dirac π bands of graphene, and identify the twist angle in the graphene-TI heterostructure. The results suggest a potential tunable electronic platform in which two different Dirac low-energy states dominate the transport behavior.

cond-mat.mes-hall↗

arXiv2015

Plasmon Resonance in Multilayer Graphene Nanoribbons

Plasmon resonance in nanopatterned single layer graphene nanoribbon (SL-GNR), double layer graphene nanoribbon (DL-GNR) and triple layer graphene nanoribbon (TL-GNR) structures is studied both experimentally and by numerical simulations. We use 'realistic' graphene samples in our experiments to identify the key bottle necks in both experiments and theoretical models. The existence of electrical tunable plasmons in such stacked multilayer GNRs was first experimentally verified by infrared microscopy. We find that the strength of the plasmonic resonance increases in DL-GNR when compared to SL-GNRs. However, we do not find a further such increase in TL-GNRs compared to DL-GNRs. We carried out systematic full wave simulations using finite element technique to validate and fit experimental results, and extract the carrier scattering rate as a fitting parameter. The numerical simulations show remarkable agreement with experiments for unpatterned SLG sheet, and a qualitative agreement for patterned graphene sheet. We believe that further improvements such as introducing a bandgap into the numerical model could lead to a better quantitative agreement of numerical simulations with experiments. We also note that such advanced modeling would first require better quality graphene samples and accurate measurements.

physics.optics↗

arXiv2015

Observation of reduced 1/f noise in Graphene field effect transistors on Boron Nitride substrates

We have investigated the low frequency (f) flicker (also called 1/f) noise of single-layer graphene devices on h-BN (placed on SiO2/Si) along with those on SiO2/Si. We observe that the devices fabricated on h-BN have on average one order of magnitude lower noise amplitude compared with devices fabricated on SiO2/Si. We associate this noise reduction to the lower densities of impurities and trap sites in h-BN than in SiO2. Furthermore, the gate voltage dependent noise amplitude shows a broad maximum at Dirac point for devices on h-BN, in contrast to the M-shaped behavior showing a minimum at Dirac point for devices on SiO2, consistent with the reduced charge inhomogeneity (puddles) for graphene on h-BN. This study demonstrates that the use of h-BN as a substrate or dielectric can be a simple and efficient noise reduction technique valuable for electronic applications of graphene and other nanomaterials.

cond-mat.mes-hall↗

arXiv2015

Electrical injection and detection of spin-polarized currents in topological insulator Bi2Te2Se

Topological insulators (TIs) are an unusual phase of quantum matter with nontrivial spin-momentum locked topological surface states (TSS). The electrical detection of spin-momentum locking of the TSS in 3D TIs has been lacking till very recently. Many of the results are measured on samples with significant bulk conduction, such as metallic Bi2Se3, where it can be challenging to separate the surface and bulk contribution to the measured spin signal. Here, we report spin potentiometric measurements in thin flakes exfoliated from bulk insulating 3D TI Bi2Te2Se (BTS221) crystals, using two outside nonmagnetic (Au) contacts for driving a DC spin helical current and a middle ferromagnetic (FM)-Al2O3 tunneling contact for detecting spin polarization. The voltage measured by the FM electrode exhibits a hysteretic step-like change when sweeping an in-plane magnetic field between opposite directions along the easy axis of the FM contact to switch its magnetization. Importantly, the direction of this step-like voltage change can be reversed by reversing the direction of the DC current, and the amplitude of the change as measured by the difference in the detector voltage between opposite FM magnetization increases linearly with increasing bias current, consistent with the current-induced spin polarization of spin-momentum-locked TSS. Our work directly demonstrates the electrical injection and detection of spin polarization in TI and may enable utilization of spin-helical TSS for future applications in nanoelectronics and spintronics.

cond-mat.mes-hall↗