arXiv subjects

Yong P. Chen

Publications and source records attributed to Yong P. Chen.

At least 91 records · Page 5Linked to original sources

arXiv2015

Formation of ultracold $^{7}$Li$^{85}$Rb molecules in the lowest triplet electronic state by photoassociation and their detection by ionization spectroscopy

We report the formation of ultracold $^{7}$Li$^{85}$Rb molecules in the $a^{3}Σ^{+}$ electronic state by photoassociation (PA) and their detection via resonantly enhanced multiphoton ionization (REMPI). With our dual-species Li and Rb magneto-optical trap (MOT) apparatus, we detect PA resonances with binding energies up to ~62 cm$^{-1}$ below the $^{7}$Li 2s $^{2}S_{1/2}$ $+$ $^{85}$Rb 5p $^{2}P_{1/2}$ asymptote. In addition, we use REMPI spectroscopy to probe the $a^{3}Σ^{+}$ state and excited electronic $3^{3} Π$ and $4^{3} Σ^{+}$ states, and identify $a^{3}Σ^{+} (v" = 7 - 13)$, $3^{3} Π(v'_Π = 0 - 10)$ and $4^{3} Σ^{+} (v'_Σ = 0 - 5)$ vibrational levels. Our line assignments agree well with ab initio calculations. These preliminary spectroscopic studies on previously unobserved electronic states are crucial to discovering transition pathways for transferring ultracold LiRb molecules created via PA to deeply bound rovibrational levels of the electronic ground state.

physics.atom-ph↗

arXiv2015

Robust gapless surface state and Rashba-splitting bands upon surface deposition of magnetic Cr on Bi$_2$Se$_3$

The interaction between magnetic impurities and the gapless surface state is of critical importance for realizing novel quantum phenomena and new functionalities in topological insulators. By combining angle-resolved photoemission spectroscopic experiments with density functional theory calculations, we show that surface deposition of Cr atoms on Bi$_2$Se$_3$ does not lead to gap opening of the surface state at the Dirac point, indicating the absence of long-range out-of-plane ferromagnetism down to our measurement temperature of 15 K. This is in sharp contrast to bulk Cr doping, and the origin is attributed to different Cr occupation sites. These results highlight the importance of nanoscale configuration of doped magnetic impurities in determining the electronic and magnetic properties of topological insulators.

cond-mat.str-el↗

arXiv2015

Magnetic field induced helical mode and topological transitions in a quasi-ballistic topological insulator nanoribbon with circumferentially quantized surface state sub-bands

A topological insulator (TI) nanowire (NW), where the core is insulating and the 2D spin-helical Dirac fermion topological surface states (TSS) are circumferentially quantized into a series of 1D sub-bands, promises novel topological physics and applications. An axial magnetic flux (Φ) through the core drives periodic topological transitions in the surface sub-bands, changing from being all doubly-degenerate with a gapped Dirac point (DP) at integer (including zero) flux quanta (Φ$_0$ = h/e, with h being the Planck constant and e the electron charge), to contain a topologically-protected, non-degenerate 1D spin helical mode with restored DP at half-integer flux quanta. The resulting magnetoconductance is predicted to exhibit Aharonov-Bohm oscillations (ABO) with maxima occurring alternatively at half-integer or integer flux quanta (referred to as π-ABO or 0-ABO), depending periodically on the Fermi wavevector (k$_F$, with period 2π/C, C being the NW circumference). Here, we report a clear observation of such k$_F$-periodic alternations between 0-ABO and π-ABO in Bi$_2$Te$_3$ TI nanoribbon (NR, a rectangular cross sectional NW) field effect devices, which exhibit quasi-ballistic transport over ~2 μm (as manifested in length-independent conductance, exponential decaying ABO amplitude with increasing temperature (T), and an 1/T dependence of the extracted phase coherence length). The conductances as functions of the gate voltage at half and zero flux quanta also exhibit clear, but anti-correlated oscillations periodic in k$_F$ (with period 2π/C, equivalently when C encloses an integer multiples of Fermi wavelength 2π/k$_F$), consistent with the circumferentially quantized surface sub-bands. We also extract the minimal Fermi energy and momentum for TSS to emerge out of the bulk valence band, in agreement with the known Bi$_2$Te$_3$ bandstructure.

cond-mat.mes-hall↗

arXiv2015

Gate-tunable and high responsivity graphene phototransistors on undoped semiconductor substrates

Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photodetectors. Graphene-based photodetectors have been demonstrated to date using monolayer graphene operating in conjunction with either metals or semiconductors. Most graphene devices are fabricated on doped Si substrates with SiO2 dielectric used for back gating. Here, we demonstrate photodetection in graphene field effect phototransistors fabricated on undoped semiconductor (SiC) substrates. The photodetection mechanism relies on the high sensitivity of the graphene conductivity to the local change of the electric field that can result from the photo-excited charge carriers produced in the back-gated semiconductor substrate. We also modeled the device and simulated its operation using the finite element method to validate the existence of the field induced photoresponse mechanism and study its properties. Our graphene phototransistor possesses a room-temperature photoresponsivity as high as ~ 7.4 A/W, higher than the required photoresponsivity (1 A/W) in most practical applications. The light power-dependent photocurrent and photoresponsivity can be tuned by the source-drain bias voltage and back-gate voltage. Graphene phototransistors based on this simple and generic architecture can be fabricated by depositing graphene on a variety of undoped substrates, and are attractive for many applications in which photodetection or radiation detection is sought.

cond-mat.mes-hall↗

arXiv2015

Polycrystalline graphene and other two-dimensional materials

Graphene, a single atomic layer of graphitic carbon, has attracted intense attention due to its extraordinary properties that make it a suitable material for a wide range of technological applications. Large-area graphene films, which are necessary for industrial applications, are typically polycrystalline, that is, composed of single-crystalline grains of varying orientation joined by grain boundaries. Here, we present a review of the large body of research reported in the past few years on polycrystalline graphene. We discuss its growth and formation, the microscopic structure of grain boundaries and their relations to other types of topological defects such as dislocations. The review further covers electronic transport, optical and mechanical properties pertaining to the characterizations of grain boundaries, and applications of polycrystalline graphene. We also discuss research, still in its infancy, performed on other 2D materials such as transition metal dichalcogenides, and offer perspectives for future directions of research.

cond-mat.mes-hall↗

arXiv2014

Optical Phonons in Twisted Bilayer Graphene with Gate-Induced Asymmetric Doping

Twisted bilayer graphene (tBLG) devices with ion gel gate dielectrics are studied using Raman spectroscopy in the twist angle regime where a resonantly enhanced G band can be observed. We observe prominent splitting and intensity quenching on the G Raman band when the carrier density is tuned away from charge neutrality. This G peak splitting is attributed to asymmetric charge doping in the two graphene layers, which reveals individual phonon self-energy renormalization of the two weakly-coupled layers of graphene. We estimate the effective interlayer capacitance at low doping density of tBLG using an interlayer screening model. The anomalous intensity quenching of both G peaks is ascribed to the suppression of resonant interband transitions between the two saddle points (van Hove singularities), that are displaced in the momentum space by gate-tuning. In addition, we observe a softening (hardening) of the R Raman band, a superlattice-induced phonon mode in tBLG, in electron (hole) doping. Our results demonstrate that gate modulation can be used to control the optoelectronic and vibrational properties in tBLG devices.

cond-mat.mes-hall↗

arXiv2014

Quantum Defect Theory description of weakly bound levels and Feshbach resonances in LiRb

The multichannel quantum defect theory (MQDT) in combination with the frame transformation (FT) approach is applied to model the Fano-Feshbach resonances measured for $^{7}$Li$^{87}$Rb and $^{6}$Li$^{87}$Rb [Marzok {\it et al.} Phys. Rev. A {\bf 79} 012717 (2009)]. The MQDT results show a level of accuracy comparable to that of previous models based on direct, fully numerical solutions of the the coupled channel Schrödinger equations (CC). Here, energy levels deduced from 2-photon photoassociation spectra for $^{7}$Li$^{85}$Rb are assigned by applying the MQDT approach, obtaining the bound state energies for the coupled channel problem. Our results confirm that MQDT yields a compact description of photoassociation observables as well as the Fano-Feshbach resonance positions and widths.

physics.atom-ph↗

arXiv2014

Formation of deeply bound ultracold LiRb molecules via photoassociation near the Li 2S$_{1/2}$ + Rb 5P$_{3/2}$ asymptote

We present spectra of ultracold $^7$Li$^{85}$Rb molecules in their electronic ground state formed by spontaneous decay of weakly bound photoassociated molecules. Beginning with atoms in a dual species magneto-optical trap (MOT), weakly bound molecules are formed in the 4(1) electronic state, which corresponds to the B$^1Π$ state at short range. These molecules spontaneously decay to the electronic ground state and we use resonantly enhanced multiphoton ionization (REMPI) to determine the vibrational population distribution in the electronic ground states after spontaneous emission. Many of the observed lines from the spectra are consistent with transitions from the X$^1Σ^+$ ground electronic state to either the B$^1Π$ or D$^1Π$ electronic states that have been previously observed, with levels possibly as low as X$^1Σ^+$ $(v'' = 2)$ being populated. We do not observe decay to weakly bound vibrational levels of the X$^1Σ^+$ or a$^3Σ^+$ electronic states in the spectra. We also deduce a lower bound of 3900 cm$^{-1}$ for the dissociation energy of the LiRb$^+$ molecular ion.

physics.atom-ph↗

arXiv2014

Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator

A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport signatures predicted for such topological surface states (TSS) is a well-defined half-integer quantum Hall effect (QHE) in a magnetic field, where the surface Hall conductivities become quantized in units of (1/2)e2/h (e being the electron charge, h the Planck constant) concomitant with vanishing resistance. Here, we observe well-developed QHE arising from TSS in an intrinsic TI of BiSbTeSe2. Our samples exhibit surface dominated conduction even close to room temperature, while the bulk conduction is negligible. At low temperatures and high magnetic fields perpendicular to the top and bottom surfaces, we observe well-developed integer quantized Hall plateaus, where the two parallel surfaces each contributing a half integer e2/h quantized Hall (QH) conductance, accompanied by vanishing longitudinal resistance. When the bottom surface is gated to match the top surface in carrier density, only odd integer QH plateaus are observed, representing a half-integer QHE of two degenerate Dirac gases. This system provides an excellent platform to pursue a plethora of exotic physics and novel device applications predicted for TIs, ranging from magnetic monopoles and Majorana particles to dissipationless electronics and fault-tolerant quantum computers.

cond-mat.mes-hall↗

arXiv2014

Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator

Topological insulators (TI), with characteristic Dirac-fermion topological surface states (TSS), have emerged as a new class of electronic materials with rich potentials for both novel physics and device applications. However, a major challenge with realistic TI materials is to access, distinguish and manipulate the electronic transport of TSS often obscured by other possible parallel conduction channels that include the bulk as well as a two-dimensional electron gas (2DEG) formed near the surface due to bending of the bulk bands. Such a (Schrodinger-fermion) 2DEG represents topologically-trivial surface states, whose coexistence with the TSS has been revealed by angle resolved photoemission spectroscopy. Here we show that simple manipulations of surface conditions can be used to access and control both types of surface states and their coexistence in bulk-insulating Bi2Te2Se, whose surface conduction is prominently manifested in temperature dependent resistance and nonlocal transport. The trivial 2DEG and TSS can both exhibit clear Shubnikov-de Haas oscillations in magnetoresistance, with different Berry phases ~0 and ~pi that distinguish their different topological characters. We also report a deviation from the typical weak antilocalization behavior, possibly due to high mobility TSS. Our study enables distinguishing, controlling and harnessing electronic transport of TI surface carriers with different topological natures.

cond-mat.mtrl-sci↗

arXiv2014

Raman spectra and electron-phonon coupling in disordered graphene with gate-tunable doping

We report a Raman spectroscopy study of graphene field-effect transistors (GFET) with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back gate voltages (Vg) for various irradiation dosages (Re). We study effects in the Raman spectra due to Vg-induced doping and artificially created disorder at various Re. With moderate disorder (irradiation), the Raman G peak with respect to the graphene carrier density (nFE) exhibits a minimum in peak frequency and a maximum in peak width near the charge- neutral point (CNP). These trends are similar to those seen in previous works on pristine graphene and have been attributed to a reduction of electron-phonon coupling strength (D) and removal of the Kohn anomaly as the Fermi level moves away from the CNP. We also observe a maximum in I2D/IG and weak maximum in ID/IG near the CNP. All the observed dependences of Raman parameters on nFE weaken at stronger disorder (higher Re), implying that disorder causes a reduction of D as well. Our findings are valuable for understanding Raman spectra and electron-phonon physics in doped and disordered graphene.

cond-mat.mtrl-sci↗

arXiv2014

Tunable Landau-Zener transitions in a spin-orbit coupled Bose-Einstein condensate

The Landau-Zener (LZ) transition is one of the most fundamental phenomena in quantum dynamics. It describes nonadiabatic transitions between quantum states near an avoided crossing that can occur in diverse physical systems. Here we report experimental measurements and tuning of LZ transitions between the dressed eigenlevels of a Bose-Einstein condensate (BEC) that is synthetically spin-orbit (SO) coupled. We measure the transition probability as the BEC is accelerated through the SO avoided crossing and study its dependence on the coupling between the diabatic (bare) states, eigenlevel slope, and eigenstate velocity--the three parameters of the LZ model that are independently controlled in our experiments. Furthermore, we performed time-resolved measurements to demonstrate the breaking down of the spin-momentum locking of the spin-orbit-coupled BEC in the nonadiabatic regime, and we determined the diabatic switching time of the LZ transitions. Our observations show quantitative agreement with the LZ model and numerical simulations of the quantum dynamics in the quasimomentum space. The tunable LZ transition may be exploited to enable a spin-dependent atomtronic transistor.

cond-mat.quant-gas↗

arXiv2014

Interspecies collision-induced losses in a dual species 7Li-85Rb magneto-optical trap

In this article, we report the measurement of collision-induced loss rate coefficients β_{Li,Rb} and β_{Rb,Li}, and also discuss means to significantly suppress such collision induced losses. We first describe our dual-species magneto-optical trap (MOT) that allows us to simultaneously trap > 5x10^8 7Li atoms loaded from a Zeeman slower and > 2x10^8 85Rb atoms loaded from a dispenser. We observe strong interspecies collision-induced losses in the MOTs which dramatically reduce the maximum atom number achievable in the MOTs. We measure the trap loss rate coefficients β_{Li,Rb} and β_{Rb,Li}, and, from a study of their dependence on the MOT parameters, determine the cause for the losses observed. Our results provide valuable insights into ultracold collisions between 7Li and 85Rb, guide our efforts to suppress collision induced losses, and also pave the way for the production of ultracold 7Li85Rb molecules.

physics.atom-ph↗

arXiv2014

Photoassociation of ultracold LiRb* molecules: observation of high efficiency and unitarity-limited rate saturation

We report the production of ultracold heteronuclear 7Li85Rb molecules in excited electronic states by photoassociation (PA) of ultracold 7Li and 85Rb atoms. PA is performed in a dual-species 7Li-85Rb magneto-optical trap (MOT) and the PA resonances are detected using trap loss spectroscopy. We identify several strong PA resonances below the Li (2s 2S1/2) + Rb (5p 2P3/2) asymptote and experimentally determine the long range C6 dispersion coefficients. We find a molecule formation rate (P_LiRb) of 3.5x10^7 s^-1 and a PA rate coefficient (K_PA) of 1.3x10^-10 cm^3/s, the highest among heteronuclear bi-alkali molecules. At large PA laser intensity, we observe the saturation of the PA rate coefficient (K_PA) close to the theoretical value at the unitarity limit.

physics.atom-ph↗

arXiv2014

Formation of ultracold LiRb molecules by photoassociation near the Li (2s 2S1/2) + Rb (5p 2P1/2) asymptote

We report the production of ultracold 7Li85Rb molecules by photoassociation (PA) below the Li (2s 2S1/2) + Rb (5p 2P1/2) asymptote. We perform PA spectroscopy in a dual-species 7Li-85Rb magneto-optical trap (MOT) and detect the PA resonances using trap loss spectroscopy. We observe several strong PA resonances corresponding to the last few bound states, assign the lines and derive the long range C6 dispersion coefficients for the Li (2s 2S1/2) + Rb (5p 2P1/2) asymptote. We also report an excited-state molecule formation rate (P_LiRb) of ~10^7 s^-1 and a PA rate coefficient (K_PA) of ~4x10^-11 cm^3/s, which are both among the highest observed for heteronuclear bi-alkali molecules. These suggest that PA is a promising route for the creation of ultracold ground state LiRb molecules.

physics.atom-ph↗

arXiv2014

Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states

Spin-momentum helical locking is one of the most important properties of the nontrivial topological surface states (TSS) in 3D topological insulators (TI). It underlies the iconic topological protection (suppressing elastic backscattering) of TSS and is foundational to many exotic physics (eg., majorana fermions) and device applications (eg., spintronics) predicted for TIs. Based on this spin-momentum locking, a current flowing on the surface of a TI would be spin-polarized in a characteristic in-plane direction perpendicular to the current, and the spin-polarization would reverse when the current direction reverses. Observing such a spin-helical current in transport measurements is a major goal in TI research and applications. We report spin-dependent transport measurements in spin valve devices fabricated from exfoliated thin flakes of Bi2Se3 (a prototype 3D TI) with ferromagnetic (FM) Ni contacts. Applying an in-plane magnetic (B) field to polarize the Ni contacts along their easy axis, we observe an asymmetry in the hysteretic magnetoresistance (MR) between opposite B field directions. The polarity of the asymmetry in MR can be reversed by reversing the direction of the DC current. The observed asymmetric MR can be understood as a spin-valve effect between the current-induced spin polarization on the TI surface (due to spin-momentum-locking of TSS) and the spin-polarized ferromagnetic contacts. Our results provide a direct transport evidence for the spin helical current in TSS.

cond-mat.mes-hall↗

arXiv2014

Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing effectively switching off the bulk conduction). Tuning the Fermi level from bulk band to TSS strongly enhances both the WAL (increasing the number of quantum coherent channels from one to peak around two) and LMR (increasing its slope by up to 10 times). The SS-enhanced LMR is accompanied by a strongly nonlinear Hall effect, suggesting important roles of charge inhomogeneity (and a related classical LMR), although existing models of LMR cannot capture all aspects of our data. Our systematic gate and temperature dependent magnetotransport studies provide deeper insights into the nature of both MR phenomena and reveal differences between bulk and TSS transport in TI related materials.

cond-mat.mes-hall↗

arXiv2014

Gate Tunable Relativistic Mass and Berry$'$s phase in Topological Insulator Nanoribbon Field Effect Devices

Transport due to spin-helical massless Dirac fermion surface state is of paramount importance to realize various new physical phenomena in topological insulators, ranging from quantum anomalous Hall effect to Majorana fermions. However, one of the most important hallmarks of topological surface states, the Dirac linear band dispersion, has been difficult to reveal directly in transport measurements. Here we report experiments on Bi2Te3 nanoribbon ambipolar field effect devices on high-k SrTiO3 substrates, where we achieve a gate-tuned bulk metal-insulator transition and the topological transport regime with substantial surface state conduction. In this regime, we report two unambiguous transport evidences for gate-tunable Dirac fermions through π Berry$'$s phase in Shubnikov-de Haas oscillations and effective mass proportional to the Fermi momentum, indicating linear energy-momentum dispersion. We also measure a gate-tunable weak anti-localization (WAL) with 2 coherent conduction channels (indicating 2 decoupled surfaces) near the charge neutrality point, and a transition to weak localization (indicating a collapse of the Berry$'$s phase) when the Fermi energy approaches the bulk conduction band. The gate-tunable Dirac fermion topological surface states pave the way towards a variety of topological electronic devices.

cond-mat.mes-hall↗