arXiv subjects

Yong-Joo Doh

Publications and source records attributed to Yong-Joo Doh.

41 records · Page 3Linked to original sources

arXiv2005

Tunable Supercurrent Through Semiconductor Nanowires

Nanoscale superconductor-semiconductor hybrid devices are assembled from InAs semiconductor nanowires individually contacted by aluminum-based superconductor electrodes. Below 1 K, the high transparency of the contacts gives rise to proximity-induced superconductivity. The nanowires form superconducting weak links operating as mesoscopic Josephson junctions with electrically tunable coupling. The supercurrent can be switched on/off by a gate voltage acting on the electron density in the nanowire. A variation in gate voltage induces universal fluctuations in the normal-state conductance which are clearly correlated to critical current fluctuations. The ac Josephson effect gives rise to Shapiro steps in the voltage-current characteristic under microwave irradiation.

cond-mat.supr-con↗

arXiv2005

Proximity Effect in Nb/Au/CoFe Trilayers

We have investigated the superconducting critical temperatures of Nb/Au/CoFe trilayers as a function of Au and CoFe thicknesses. Without the CoFe layer the superconducting critical temperatures of Nb/Au bilayers as a function of Au thickness follow the well-known proximity effect between a superconductor and a normal metal. The superconducting critical temperatures of Nb/Au/CoFe trilayers as a function of Au thickness exhibit a rapid initial increase in the small Au thickness region and increase slowly to a limiting value above this region, accompanied by a small oscillation of Tc. On the other hand, the superconducting critical temperatures of Nb/Au/CoFe trilayers as a function of CoFe thickness show non-monotonic behavior with a shallow dip feature. We analyzed the Tc behavior in terms of Usadel formalism and found that most features are consistent with the theory, although the small oscillation of Tc as a function of the Au thickness cannot be accounted for. We have also found quantitative values for the two interfaces: Nb/Au and Au/CoFe.

cond-mat.supr-con↗

arXiv2000

The resistance anomaly in the surface layer of Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ single crystals under radio-frequency irradiation

We observed that radio-frequency (rf) irradiation significantly enhances the $c$-axis resistance near and below the superconducting transition of the CuO$_{2}$ layer in contact with a normal-metal electrode on the surface of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ single crystals. We attribute the resistance anomaly to the rf-induced charge-imbalance nonequilibrium effect in the surface CuO$_{2}$ layer. The relaxation of the charge-imbalance in this highly anisotropic system is impeded by the slow quasiparticle recombination rate, which results in the observed excessive resistance.

cond-mat.supr-con↗

arXiv1999

Microwave-induced constant voltage steps in surface junctions of Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} single crystals

We have observed the zero-crossing steps in a surface junction of a mesa structure micro-fabricated on the surface of a Bi-2212 single crystal. With the application of microwave of frequencies 76 and 94 GHz, the current-voltage characteristics show clear voltage steps satisfying the ac Josephson relation. Increasing the microwave power, the heights of the steps show the Bessel-function behavior up to step number n=4. We confirm that the intrinsic surface junction meets the criterion for the observation of zero-crossing steps.

cond-mat.supr-con↗

arXiv1999

Progressive evolution of tunneling characteristics of in-situ fabricated intrinsic Josephson junctions in Bi_2Sr_2CaCu_2O_{8+delta} single crystals

Stacks of a few intrinsic tunnel junctions were micro-fabricated on the surface of Bi-2212 single crystals. The number of junctions in a stack was tailored by progressively increasing the height of the stack by ion-beam etching, while its tunneling characteristics were measured in-situ in a vacuum chamber for temperatures down to ~13 K. Using this in-situ etching/measurements technique in a single piece of crystal, we systematically excluded any spurious effects arising from variations in the junction parameters and made clear analysis on the following properties of the surface and inner conducting planes. First, the tunneling resistance and the current-voltage curves are scaled by the surface junction resistance. Second, we confirm that the reduction in both the gap and the superconducting transition temperature of the surface conducting plane in contact with a normal metal is not caused by the variation in the doping level, but is caused by the proximity contact. Finally, the main feature of a junction is not affected by the presence of other junctions in a stack in a low bias region.

cond-mat.supr-con↗