arXiv subjects

Yong-Joo Doh

Publications and source records attributed to Yong-Joo Doh.

At least 37 records · Page 2Linked to original sources

arXiv2016

Fabrication and Characterization of PbIn-Au-PbIn Superconducting Junctions

We report on the fabrication and measurement results of the electrical transport properties of superconductor-normal metal-superconductor (SNS) weak links, made of PbIn superconductor and Au metal. The maximum supercurrent reaches up to ~ 6 μA at T = 2.3 K and the supercurrent persists even at higher temperature of T = 4.7 K. Magnetic field dependence of the critical current is consistent with a theoretical fit using the narrow junction model. The superconducting quantum interference device (SQUID) was also fabricated using two PbIn-Au-PbIn junctions connected in parallel. Under perpendicular magnetic field, we clearly observed periodic oscillations of dV/dI with a period of magnetic flux quantum threading into the supercurrent loop of the SQUID. Our fabrication methods would provide an easy and simple way to explore the superconducting proximity effects without ultra-low-temperature cryostats.

cond-mat.supr-con↗

arXiv2016

Very Strong Superconducting Proximity Effects in PbS Semiconductor Nanowires

We report the fabrication of strongly coupled nanohybrid superconducting junctions using PbS semiconductor nanowires and Pb0.5In0.5 superconducting electrodes. The maximum supercurrent in the junction reaches up to ~15 μA at 0.3 K, which is the highest value ever observed in semiconductor-nanowire-based superconducting junctions. The observation of microwave-induced constant voltage steps confirms the existence of genuine Josephson coupling through the nanowire. Monotonic suppression of the critical current under an external magnetic field is also in good agreement with the narrow junction model. The temperature-dependent stochastic distribution of the switching current exhibits a crossover from phase diffusion to a thermal activation process as the temperature decreases. These strongly coupled nanohybrid superconducting junctions would be advantageous to the development of gate-tunable superconducting quantum information devices.

cond-mat.supr-con↗

arXiv2016

Switching current distributions in InAs nanowire Josephson junctions

We report on the switching current distributions in nano-hybrid Josephson junctions made of InAs semiconductor nanowires. Temperature dependence of the switching current distribution can be understood by motion of Josephson phase particle escaping from a tilted washboard potential, fitted well to the macroscopic quantum tunneling, thermal activation and phase diffusion models, depending on temperature. Application of gate voltage to tune the Josephson coupling strength enables us to adjust the effective temperature for the escaping process, which would be promising for developing gate-tunable superconducting phase qubits.

cond-mat.supr-con↗

arXiv2016

Quantum electronic transport of topological surface states in beta-Ag2Se nanowire

Single-crystalline β-Ag2Se nanostructures, a new class of 3D topological insulators (TIs), were synthesized using the chemical vapor transport method. The topological surface states were verified by measuring electronic transport properties including the weak antilocalization effect, Aharonov-Bohm oscillations, and Shubnikov-de Haas oscillations. First-principles band calculations revealed that the band inversion in \b{eta}-Ag2Se is caused by strong spin-orbit coupling and Ag-Se bonding hybridization. These extensive investigations provide new meaningful information about silver-chalcogenide TIs that have anisotropic Dirac cones, which could be useful for spintronics applications.

cond-mat.mes-hall↗

arXiv2015

Gate-tunable superconducting quantum interference devices of PbS nanowires

We report on the fabrication and electrical transport properties of gate-tunable superconducting quantum interference devices (SQUIDs), made of semiconducting PbS nanowire contacted with PbIn superconducting electrodes. Applied with a magnetic field perpendicular to the plane of the nano-hybrid SQUID, periodic oscillations of the critical current due to the flux quantization in SQUID are observed up to T = 4.0 K. Nonsinusoidal current-phase relationship is obtained as a function of temperature and gate voltage, which is consistent with a short and diffusive junction model.

cond-mat.mes-hall↗

arXiv2015

Quantum interference effects in chemical vapor deposited graphene

We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying scattering mechanisms. The characteristic length scale for phase coherence is compared with that estimated from universal conductance fluctuations in the microporeformed graphene sample. These extensive temperature- and gate-dependent measurements of the intervalley and intravalley scattering lengths provide important and useful insight for the macroscopic applications of graphene-based quantum devices.

cond-mat.mes-hall↗

arXiv2015

Quantum electrical transport properties of topological insulator Bi2Te3 nanowires

We investigate the quantum transport properties of surface electrons on a topological insulator Bi2Te3 nanowire in a magnetotransport study. Although the nanowires are synthesized by using a relatively coarse method of electrochemical deposition, clear Aharonov-Bohm oscillations of phases 0 and pi are observed, owing to the highly coherent surface electron channel. The oscillation amplitude exhibits exponential temperature dependence, suggesting that the phase coherence length L_phi is inversely proportional to the temperature, as in quasi-ballistic systems. In addition, a weak antilocalization analysis on the surface channel by using a one-dimensional localization theory, enabled by successful extraction of the surface contribution from the magnetoconductance data, is provided in support of the temperature dependence of L_phi.

cond-mat.mes-hall↗

arXiv2015

Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory

We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10^5. The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal contacts and reveals a competing positive photoconductivity. The conductivity recovery after illumination substantially slows down at low temperature, indicating a thermally activated detrapping mechanism. At 78 K, the spontaneous recovery of the conductance is completely quenched, resulting in a reversible memory device which can be switched by light and gate voltage pulses. The novel NPC based optoelectronics may find exciting applications in photodetection and nonvolatile memory with low power consumption.

cond-mat.mes-hall↗

arXiv2015

Controlled formation of high-mobility shallow electron gases in SrTiO3 single crystal

We report controlled formation of sub-100 nm-thin electron channels in SrTiO$_3$ by doping with oxygen vacancies induced by Ar$^+$-ion irradiation. The conducting channels exhibit a consistent high electron mobility (~15,000 cm$^2$V$^{-1}$s$^{-1}$), which enables clear observation of magnetic quantum oscillations, and gate-tunable linear magnetoresistance. Near the onset of electrical conduction, the metal-insulator transition is induced by the mobility suppression. With the high electron mobility and the ease of controlled channel formation, this ion-irradiation doping method may provide an excellent basis for developing oxide electronics.

cond-mat.mes-hall↗

arXiv2011

Electrically Tunable Macroscopic Quantum Tunneling in a Graphene-based Josephson Junction

Stochastic switching-current distribution in a graphene-based Josephson junction exhibits a crossover from the classical to quantum regime, revealing the macroscopic quantum tunneling (MQT) of a Josephson phase particle at low temperatures. Microwave spectroscopy measurements indicate a multi-photon absorption process occurring via discrete energy levels in washboard potential well. The crossover temperature for MQT and the quantized level spacing are controlled with the gate voltage, implying its potential application to gate-tunable superconducting quantum bits.

cond-mat.mes-hall↗

arXiv2011

Absence of Tunneling Character in c-axis Transport of SmFeAsO0.85 Single Crystals

We made electrical transport measurements along the c-axis of SmFeAsO0.85 single crystals, in both three- and four-terminal configurations, focusing on examining the possible formation of Josephson coupling between FeAs superconducting layers. Anisotropic bulk superconductivity was observed along the c-axis, but without Josephson coupling, as confirmed by the absence of both the hysteresis in current-voltage curves and the modulation of the critical current by the in-plane magnetic fields. The variation of the critical currents for different magnetic-field directions gives the anisotropy ratio of 5. This three-dimensional electronic structure of our iron pnictide superconductors is in clear contrast to the two-dimensional one observed in the cuprate superconductors, another stacked superconducting system.

cond-mat.str-el↗

arXiv2011

Superconducting junction of a single-crystalline Au nanowire for an ideal Josephson device

We report on the fabrication and measurements of a superconducting junction of a single-crystalline Au nanowire, connected to Al electrodes. Current-Voltage characteristic curve shows clear supercurrent branch below the superconducting transition temperature of Al and quantized voltage plateaus on application of microwave radiation, as expected from Josephson relations. Highly transparent (0.95) contacts very close to an ideal limit of 1 are formed at the interface between the normal metal (Au) and the superconductor (Al). The very high transparency is ascribed to the single crystallinity of a Au nanowire and the formation of an oxide-free contact between Au and Al. The sub-gap structures of the differential conductance are well explained by coherent multiple Andreev reflections (MAR), the hallmark of mesoscopic Josephson junctions. These observations demonstrate that single crystalline Au nanowires can be employed to develop novel quantum devices utilizing coherent electrical transport.

cond-mat.mes-hall↗

arXiv2011

Above-gap Conductance Anomaly Studied in Superconductor-graphene-superconductor Josephson Junctions

We investigated the electrical transport properties of superconductor-graphene-superconductor (SGS) Josephson junctions. In low voltage bias, we observed conventional proximity-coupled Josephson effect, such as the supercurrent flow through the graphene, sub-gap structure of differential conductance due to Andreev reflection, and periodic modulation of the critical current Ic with perpendicular magnetic field H to the graphene. In high bias above the superconducting gap voltage, however, we also observed an anomalous jump of the differential conductance, the voltage position of which is sensitive to the backgate voltage Vg. Our extensive study with varying Vg, temperature, and H reveals that the above-gap structure takes place at a characteristic power P*, which is irrespective of Vg for a given junction. Temperature and H dependences of P* are well explained by the increase of the electron temperature in graphene.

cond-mat.mes-hall↗

arXiv2011

Observation of Supercurrent in PbIn-Graphene-PbIn Josephson Junction

Superconductor-graphene-superconductor (SGS) junction provides a unique platform to study relativistic electrodynamics of Dirac fermions combined with proximity-induced superconductivity. We report observation of the Josephson effect in proximity-coupled superconducting junctions of graphene in contact with Pb1-xInx (x=0.07) electrodes for temperatures as high as T = 4.8K, with a large IcRn (~ 255 microV). This demonstrates that Pb1-xInx SGS junction would facilitate the development of the superconducting quantum information devices and superconductor-enhanced phase-coherent transport of graphene.

cond-mat.mes-hall↗

arXiv2009

Nonvolatile memory effects in hybrid devices of few-layer graphene and ferroelectric polymer films

We report on the fabrication and electrical characterization of few-layer graphene (FLG) devices coated with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Highly stable and reliable resistance changes were observed under floating conditions, which were dependent on the back gate voltage applied beforehand. Nonvolatile memory functionality in the hybrid FLG-P(VDF/TrFE) devices is attributed to a remanent electric field induced by the ferroelectric polarization of the P(VDF/TrFE) layer.

cond-mat.mtrl-sci↗

arXiv2008

Electrically Driven Light Emission from Individual CdSe Nanowires

We report electroluminescence (EL) measurements carried out on three-terminal devices incorporating individual n-type CdSe nanowires. Simultaneous optical and electrical measurements reveal that EL occurs near the contact between the nanowire and a positively biased electrode or drain. The surface potential profile, obtained by using Kelvin probe microscopy, shows an abrupt potential drop near the position of the EL spot, while the band profile obtained from scanning photocurrent microscopy indicates the existence of an n-type Schottky barrier at the interface. These observations indicate that light emission occurs through a hole leakage or an inelastic scattering induced by the rapid potential drop at the nanowire-electrode interface.

cond-mat.mtrl-sci↗

arXiv2008

Andreev reflection versus Coulomb blockade in hybrid semiconductor nanowire devices

Semiconductor nanowires provide promising low-dimensional systems for the study of quantum transport phenomena in combination with superconductivity. Here we investigate the competition between the Coulomb blockade effect, Andreev reflection, and quantum interference, in InAs and InP nanowires connected to aluminum-based superconducting electrodes. We compare three limiting cases depending on the tunnel coupling strength and the characteristic Coulomb interaction energy. For weak coupling and large charging energy, negative differential conductance is observed as a direct consequence of the BCS density of states in the leads. For intermediate coupling and charging energy smaller than the superconducting gap, the current-voltage characteristic is dominated by Andreev reflection and Coulomb blockade produces an effect only near zero bias. For almost ideal contact transparencies and negligible charging energy, we observe universal conductance fluctuations whose amplitude is enhanced due to Andreev reflection at the contacts.

cond-mat.mes-hall↗

arXiv2007

Quantum Interference Effects in InAs Semiconductor Nanowires

We report quantum interference effects in InAs semiconductor nanowires strongly coupled to superconducting electrodes. In the normal state, universal conductance fluctuations are investigated as a function of magnetic field, temperature, bias and gate voltage. The results are found to be in good agreement with theoretical predictions for weakly disordered one-dimensional conductors. In the superconducting state, the fluctuation amplitude is enhanced by a factor up to ~ 1.6, which is attributed to a doubling of charge transport via Andreev reflection. At a temperature of 4.2 K, well above the Thouless temperature, conductance fluctuations are almost entirely suppressed, and the nanowire conductance exhibits anomalous quantization in steps of e^{2}/h.

cond-mat.mes-hall↗