arXiv subjects

Yong-Sung Kim

Publications and source records attributed to Yong-Sung Kim.

9 recordsLinked to original sources

arXiv2025

Thermodynamically driven tilt grain boundaries of monolayer crystals using catalytic liquid alloys

We report a method to precisely control the atomic defects at grain boundaries (GBs) of monolayer MoS2 by vapor-liquid-solid (VLS) growth using sodium molybdate liquid alloys, which serve as growth catalysts to guide the formations of the thermodynamically most stable GB structure. The Mo-rich chemical environment of the alloys results in Mo-polar 5|7 defects with a yield exceeding 95%. The photoluminescence (PL) intensity of VLS-grown polycrystalline MoS2 films markedly exceeds that of the films exhibiting abundant S 5|7 defects, which are kinetically driven by vapor-solid-solid growths. Density functional theory calculations indicate that the enhanced PL intensity is due to the suppression of non-radiative recombination of charged excitons with donor-type defects of adsorbed Na elements on S 5|7 defects. Catalytic liquid alloys can aid in determining a type of atomic defect even in various polycrystalline 2D films, which accordingly provides a technical clue to engineer their properties.

cond-mat.mtrl-sci↗

arXiv2025

Interstitially bridged van der Waals interface enabling stacking-fault-free, layer-by-layer epitaxy

Van der Waals (vdW) crystals are prone to twisting, sliding, and buckling due to inherently weak interlayer interactions. While thickness-controlled vdW structures have attracted considerable attention as ultrathin semiconducting channels, the deterministic synthesis of stacking-fault-free multilayers remains a persistent challenge. Here, we report the epitaxial growth of single-crystalline hexagonal bilayer MoS 2 , enabled by the incorporation of Mo interstitials between layers during layer-by-layer deposition. The resulting bilayers exhibit exceptional structural robustness, maintaining their crystallinity and suppressing both rotational and translational interlayer misalignments even after transfer processes. Atomic-resolution analysis reveals that the Mo interstitials are located at a single sublattice site within the hexagonal lattice, where they form tetrahedral bonds with sulfur atoms from both MoS 2 layers, effectively anchoring the interlayer registry. Density functional theory calculations further indicate that these Mo atoms act as nucleation centers, promoting the selective formation of the hexagonal bilayer phase. This approach offers a robust strategy for the deterministic growth of multilayer vdW crystals with precisely controlled stacking order and enhanced interlayer coupling.

cond-mat.mtrl-sci↗

arXiv2022

Direct probing of phonon mode specific electron-phonon scatterings in two-dimensional semiconductor transition metal dichalcogenides: Symmetry and Berry phase

Electron-phonon scatterings in solid-state systems are pivotal processes in determining many key physical quantities such as charge carrier mobilities and thermal conductivities. Here, we report on the direct probing of phonon mode specific electron-phonon scatterings in layered semiconducting transition metal dichalcogenides WSe2, MoSe2, WS2, and MoS2 through inelastic electron tunneling spectroscopy measurements, quantum transport simulations, and density functional calculation. We experimentally and theoretically characterize momentum-conserving single- and two-phonon electron-phonon scatterings involving up to as many as eight individual phonon modes in mono- and bilayer films, among which transverse, longitudinal acoustic and optical, and flexural optical phonons play significant roles in quantum charge flows. Moreover, we observe that two-phonon inelastic electron tunneling processes, which are confirmed to be generic in all four semiconducting layers, are governed by layer-number dependent symmetry, quantum interference, and geometric Berry phase.

cond-mat.mes-hall↗

arXiv2019

Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides

Assessing atomic defect states and their ramifications on the electronic properties of two dimensional van der Waals semiconducting transition metal dichalcogenides (SC TMDs) is the primary task to expedite multi disciplinary efforts in the promotion of next generation electrical and optical device applications utilizing these low dimensional materials. Here, with electron tunneling and optical spectroscopy measurements with density functional theory, we spectroscopically locate the midgap states from chalcogen atom vacancies in four representative monolayer SC TMDs (MoS2, WS2, MoSe2, WSe2), and carefully analyze the similarities and dissimilarities of the atomic defects in four distinctive materials regarding the physical origins of the missing chalcogen atoms and the implications to SC mTMD properties. In addition, we address both quasiparticle and optical energy gaps of the SC mTMD films and find out many body interactions significantly enlarge the quasiparticle energy gaps and excitonic binding energies, when the semiconducting monolayers are encapsulated by non interacting hexagonal boron nitride layers.

cond-mat.mtrl-sci↗

arXiv2014

Linear-response calculation of the effective Coulomb interaction between closed-shell localized electrons: Cu, Zn, and ZnO

A linear-response method to calculate the effective Coulomb interaction ($U$) between closed-shell localized electrons is suggested and applied to the $3d$ closed-shell systems (Cu, Zn, and ZnO) based on plane-wave basis density-functional theory calculations. Since the closed-shell localized states are far below the Fermi level, large local perturbation potential ($α$) projected to the localized states is applied to induce purposeful density response ($Δn$). From the $α$, the perturbation potential cost for density response onset, by which the $Δn$ begins to be induced, is removed. The main screening channel for the effective Coulomb interaction is the itinerant electrons deoccupied from the perturbed localized states. The Cu, Zn, and ZnO $3d$ electron binding energies are calculated based on the local density approximation plus $U$ with the $U$ values calculated from the linear-response, which are found to be in good agreement with experiments.

cond-mat.str-el↗

arXiv2013

Electronic transport through ordered and disordered graphene grain boundaries

The evolution of electronic wave packets (WPs) through grain boundaries (GBs) of various structures in graphene was investigated by the numerical solution of the time-dependent Schroedinger equation. WPs were injected from a simulated STM tip placed above one of the grains. Electronic structure of the GBs was calculated by ab-initio and tight-binding methods. Two main factors governing the energy dependence of the transport have been identified: the misorientation angle of the two adjacent graphene grains and the atomic structure of the GB. In case of an ordered GB made of a periodic repetition of pentagon-heptagon pairs, it was found that the transport at high and low energies is mainly determined by the misorientation angle, but the transport around the Fermi energy is correlated with the electronic structure of the GB. A particular line defect with zero misorientation angle (Lahiri et al, Nat Nanotechnol 2010,5:326) behaves as a metallic nanowire and shows electron-hole asymmetry for hot electrons or holes. To generate disordered GBs, found experimentally in CVD graphene samples, a Monte-Carlo-like procedure has been developed. Results show a reduced transport for the disordered GBs, primarily attributed to electronic localized states caused by C atoms with only two covalent bonds.

cond-mat.mes-hall↗

arXiv2013

Stability and dopability of native defects and group-V and -VII impurities in single-layer MoS2

We investigate the native defects, the Mo substitutional impurities of the group-VB and -VIIB elements, and the S substitutional impurities of the group-VA and -VIIA elements in single-layer MoS2, through density-functional theory calculations. It is found that the S-vacancy (V_S) and S-interstitial (S_i) are low in formation energy, about ~1 eV, in Mo- and S-rich conditions, respectively, but the carrier doping ability of the V_S and S_i is found to be poor, as they are deep level defects. The V, Nb, and Ta (group-VB) and Re (group-VIIB) impurities are found to be easily incorporated in single-layer MoS2, as Mo substitutional defects, where the V, Nb, and Ta are shallow acceptors and the Re is the only shallow donor among the considered. The unintentional n-type doping in single-layer MoS2 exfoliated from the naturally grown MoS2 bulk materials is suggested to originate from the Re impurity.

cond-mat.mtrl-sci↗

arXiv2011

Instability of Amorphous Oxide Semiconductors via Carrier-Mediated Structural Transition between Disorder and Peroxide State

The excited holes occupying the valence band tail states in amorphous oxide semiconductors are found to induce formation of meta-stable O$_2^{2-}$ peroxide defects. The valence band tail states are at least partly characterized by the O-O ppσ* molecular orbital, and the localized-hole-mediated lattice instability results in the formation of the peroxide defects. Along with the O-O bond formation, the ppσ* state is heightened up into the conduction bands, and two electrons are accordingly doped in the electronic ground state. The energy barrier from the O$_2^{2-}$ peroxide state to the normal disorder state is found to be 0.97 eV in hybrid density functional theory. The hole-mediated formation of the meta-stable peroxide defects and their meta-stability is suggested as an origin of the negative bias and/or illumination stress instability in amorphous oxide semiconductors.

cond-mat.mtrl-sci↗

arXiv2008

Rich variety of defects in ZnO via an attractive interaction between O-vacancies and Zn-interstitials

As the concentration of intrinsic defects becomes sufficiently high in O-deficient ZnO, interactions between defects lead to a significant reduction in their formation energies. We show that the formation of both O-vacancies and Zn-interstitials becomes significantly enhanced by a strong attractive interaction between them, making these defects an important source of n-type conductivity in ZnO.

cond-mat.mtrl-sci↗