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arXiv · 0812.4123

Rich variety of defects in ZnO via an attractive interaction between O-vacancies and Zn-interstitials

Yong-Sung Kim·C. H. Park
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Abstract

As the concentration of intrinsic defects becomes sufficiently high in O-deficient ZnO, interactions between defects lead to a significant reduction in their formation energies. We show that the formation of both O-vacancies and Zn-interstitials becomes significantly enhanced by a strong attractive interaction between them, making these defects an important source of n-type conductivity in ZnO.

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Yong-Sung Kim, C. H. Park. 2008-12-22. Rich variety of defects in ZnO via an attractive interaction between O-vacancies and Zn-interstitials. https://doi.org/10.1103/physrevlett.102.086403

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