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Yongbing Xu

Publications and source records attributed to Yongbing Xu.

At least 19 recordsLinked to original sources

Diffusion asymmetry of repulsive skyrmions in structured environment

The diffusion of matter in structured environments can give rise to emergent phenomena that do not occur in unstructured environments. Here, we report the asymmetric diffusion of magnetic skyrmions in structured chambers, where repulsive skyrmion-skyrmion and skyrmion-environment interactions play vital roles in their diffusive behavior. By fabricating an off-center asymmetric gate separating two chambers, skyrmions could demonstrate asymmetric diffusion through the gate, which depends on the gate symmetry, the gate opening width, and the skyrmion density. Although the diffusion is affected by the skyrmion density, the simulation outcomes are generally in line with rate equation solutions assuming time-independent diffusion rates. Diffusive skyrmions within the chamber can transiently form bonds through repulsive skyrmion-skyrmion interactions, leading to emergent rotational dynamics that is unique to interacting skyrmion systems. Our results uncover asymmetric diffusive behavior of skyrmions, offering insights that will appeal to the wide audience interested in magnetism, active matter, and statistical physics.

cond-mat.mes-hall

Negative temperature coefficient of Gilbert damping in magnetic bilayers

The Gilbert damping of magnetic materials is an important magnetic parameter that determines the switching speed and energy dissipation of spintronic devices. In simple metals, the intrinsic Gilbert damping increases with temperature and diverges near the Curie temperature as a result of spin fluctuations. Here we present atomistic simulations and experimental measurements showing surprising and opposite behavior in Py/Nd bilayers, where the Gilbert damping decreases with increasing temperature. The effect arises because of the enhanced damping at the interface as a result of spin pumping, where elevated temperatures cause a dynamic separation of the interfacial and bulk magnetization during relaxation. Furthermore, the temperature dependence of the damping can be controlled by varying the thickness of the Nd capping layer. Our findings present a new spintronic effect that can be used to modify the dynamic properties of nanoscale materials and devices for enhanced energy efficiency or with improved switching dynamics.

cond-mat.mes-hall

Antiferromagnetic Ordering Enhanced Magnetic Damping in Mn2Au/CoFeB Bilayers

Antiferromagnets (AFMs) hold significant potential for spintronic devices owing to their insensitivity to external magnetic fields and the absence of stray fields. Beyond these inherent advantages, an AFM can manipulate the magnetic dynamics of a ferromagnet (FM) layer in AFM/FM bilayers, whereas the mechanism of such manipulation remains controversial. Here, we investigate the magnetic dynamics of AFM/FM Mn2Au/CoFeB bilayers via Ferromagnetic Resonance (FMR). It is found that the Néel temperature of 2-nm-thick Mn2Au is as low as ~40 K, in sharp contrast to that of bulk Mn2Au, which exceeds 1000 K. In the Mn2Au(2 nm)/CoFeB(4 nm) bilayer, the magnetic damping $α$ of the CoFeB layer increases from 0.013 to 0.047 as temperature decreases from 160 K to 10 K, accompanied by a synchronous increase in the exchange coupling field H_rot. Such an increase in $α$ is attributed to the enhanced spin angular momentum transfer from CoFeB to Mn2Au, mediated through AFM-FM exchange coupling between Mn2Au and CoFeB, which is enhanced by the Mn2Au antiferromagnetic ordering as the temperature decreases. Our study provides deeper insights into AFM/FM dynamics and spintronic storage technology.

cond-mat.mtrl-sci

Surface ferrimagnetic order in RuO2 film

RuO2, widely proposed as a prototypical altermagnet, remains intensely debated with regard to its magnetic nature. Here, we demonstrate that RuO2 is non-magnetic in the bulk, but possesses a spontaneous surface ferrimagnetic order. Using spin- and angle-resolved photoemission spectroscopy, we directly detect a narrow surface state with identical spin polarizations at opposite momenta and at the Brillouin-zone center, incompatible with the spin texture of any altermagnetic order. First-principles calculations identify the non-magnetic bulk state and reveal that the detected magnetism is confined to the fully oxygen-terminated surface, where the charge transfer from Ru to O at surface triggers a ferrimagnetic alignment between adjacent Ru sublattices with antiparallel moments of +0.48 uB and -0.04 uB. Our findings provide a unified explanation reconciling debating reports on the magnetism of RuO2, establishing surface ferrimagnetism as the origin of the observed magnetic signals, and distinguishing it unambiguously from altermagnetism.

cond-mat.mtrl-sci

Observation of Topological Hall Effect in Synthetic Antiferromagnetic Skyrmion System

Synthetic antiferromagnetic (SAF) skyrmions have emerged as promising candidates for next-generation high-speed and highly integrated spintronic devices, owing to their exceptional properties such as high driving velocity, nanoscale dimensions, and the absence of the skyrmion Hall effect. In this work, we report the observation of the topological Hall effect in both compensated and non-compensated synthetic antiferromagnetic skyrmion systems based on [Pt/Co/Ru]2 bilayers. The antiferromagnetic skyrmions are demonstrated to be robust in these synthetic antiferromagnets under zero-field. Our first principal calculations and micromagnetic simulations demonstrate that the formation of the antiferromagnetic skyrmions are due to nonuniformity of RKKY coupling associated with the proximity effect induced magnetic moments in the Pt and Ru layers. The skyrmions in the Pt and Ru layers adjacent to the Co layers lead to the observed topological Hall effect. This work not only provides insight into the effect of the magnetic proximity effect and RKKY coupling to the SAF skyrmions, but also an effective detection method for the SAF skyrmion systems, thereby laying a foundation for the practical application of antiferromagnetic skyrmions in spintronic devices.

cond-mat.mes-hall

Nanofluidic logic based on chiral skyrmion flows

Particle-like chiral magnetic skyrmions can flow in nanotracks and behave like chiral fluids. Using interacting flows to perform logical operations is an important topic in microfluidics and nanofluidics. Here, we report a basic nanofluidic logic computing system based on chiral magnetic skyrmions flowing in parallel pipelines connected by an H-shaped junction. The flow behaviors could be manipulated by adjusting the spin polarization angle, which controls the intrinsic skyrmion Hall angle. We demonstrate that within certain range of the spin polarization angle, fully developed skyrmion flows could lead to fluidic logical operations, which significantly reduce the complexity of skyrmion logic as there is no need for deterministic creation, precise control, and detection of a single isolated skyrmion. Our results suggest that the chiral flow behaviors of magnetic quasiparticles may offer possibilities for spintronic and nanofluidic functions.

cond-mat.mes-hall

Light-Induced Giant Enhancement of the Nonlinear Hall Effect in Two-Dimensional Electron Gases at KTaO3 (111) Interfaces

The nonlinear Hall effect (NLHE), an emergent phenomenon in noncentrosymmetric systems, enables the generation of a transverse voltage without an external magnetic field through a second-order electrical response. However, achieving a sizable NLHE signal remains a critical challenge for its application in frequency-doubling and rectifying devices. Here, we report a light-induced giant enhancement of the NLHE in the two-dimensional electron gas (2DEG) at the CaZrO3/KTaO3 (111) interface. Under light illumination, the second harmonic Hall voltage (V2ω y) increases substantially and undergoes a sign reversal. Correspondingly,the second-order transverse conductivity increases by nearly five orders of magnitude, reaching 2.4 um V-1 omega-1, while also reversing its sign. Scaling analysis indicates that skew scattering is the dominant mechanism underlying the NLHE and is highly tunable via optical gating. Photoexcitation pumps electrons from in-gap states into the higher-lying Ta 5d conduction band, generating high-mobility photocarriers that significantly increase the cubic transport scattering time, thereby driving a dramatic enhancement of σ(2) yxx. First-principles calculations further reveal that the Berry curvature distribution on the Fermi surface strongly depends on band filling. As the Fermi level approaches a band crossing in the Ta 5d subband near the M point, the Berry curvature triple undergoes a sign change, accounting for the experimentally observed sign reversal of the nonlinear Hall response. Our work offers a new strategy to optically boost and tune the nonlinear Hall effect in oxide 2DEG systems, paving the way for applications in light-controlled rectification and nonlinear electronic devices.

cond-mat.mes-hall

Hallmarks of terahertz magnon currents in an antiferromagnetic insulator

The efficient transport of spin angular momentum is expected to play a crucial role in future spintronic devices, which potentially operate at frequencies reaching the terahertz range. Antiferromagnetic insulators exhibit significant potential for facilitating ultrafast pure spin currents by terahertz magnons. Consequently, we here use femtosecond laser pulses to trigger ultrafast spin currents across antiferromagnetic NiO thin films in Py|NiO|Pt stacks, where permalloy (Py) and Pt serve as spin-current source and detector respectively. We find that the spin current pulses traversing NiO reach a velocity up to 40 nm/ps and experience increasing delay and broadening as the NiO thickness is increased. We can consistently explain our observations by ballistic transport of incoherent magnon. Our approach has high potential to characterize terahertz magnon transport in magnetic insulators with any kind of magnetic order.

cond-mat.mes-hall

Gate-Tunable Spin-to-Charge Conversion in Topological Insulator-Magnetic Insulator Heterostructures at Room Temperature

Over the past decade, topological insulators have received enormous attention for their potential in energy-efficient spin-to-charge conversion, enabled by strong spin-orbit coupling and spin-momentum locked surface states. Despite extensive research, the spin-to-charge conversion efficiency, usually characterized by the spin Hall angle (θSH), remains low at room temperature. In this work, we employed pulsed laser deposition to synthesize high-quality ternary topological insulators (Bi0.1Sb0.9)2Te3 thin films on magnetic insulator Y3Fe5O12. We find that the value of θSH reaches ~0.76 at room temperature and increases to ~0.9 as the Fermi level is tuned to cross topological surface states via electrical gating. Our findings provide an innovative approach to tailoring the spin-to-charge conversion in topological insulators and pave the way for their applications in energy-efficient spintronic devices.

cond-mat.mes-hall

Large Anomalous Hall Effect in a Noncoplanar Magnetic Heterostructure

The anomalous Hall effect (AHE) occurs in magnetic systems and also unexpectedly in non-magnetic materials adjacent to magnetic insulators via the heterointerface interactions. However, the AHE in heterostructures induced by magnetic proximity effect remains quite weak, restricting their practical device applications. Here, we report a large intrinsic AHE with a resistivity of 114 nΩ cm at 5 K in noncoplanar magnetic heterostructures of Cr5Te6/Pt. This is the record-high AHE value among all the magnetic insulators/heavy metal heterostructures. A reversal of the AHE signal occurs due to the reconstruction of Berry curvature at the Fermi level, which is verified by the first-principles calculations. Topological spin textures at the interface are directly visualized via high-magnetic-field magnetic force microscopy, which accounts for the large AHE, as confirmed by the atomic simulations. These findings open a new avenue for exploring the large AHE in heterointerfaces and facilitate the potential applications in topological spintronic devices.

cond-mat.mtrl-sci

Spin Splitting in Altermagnetic RuO$_2$ Enables Field-free Spin-Orbit Torque Switching via Dominant Out-of-Plane Spin Polarization

Researchers have recently identified a novel class of magnetism, termed "altermagnetism", which exhibits characteristics of both ferromagnetism and antiferromagnetism. Here, we report a groundbreaking discovery of efficient field-free spin-orbit torque (SOT) switching in a RuO$_2$ (101)/Co/Pt/Co/Pt/Ta structure. Our results demonstrate that the spin current flows along the [100] axis, induced by the in-plane charge current, with the spin polarization direction aligned parallel to the Néel vector. These z-polarized spins generate an out-of-plane anti-damping torque, enabling deterministic switching of the Co/Pt layer without the necessity of an external magnetic field. The altermagnetic spin splitting effect (ASSE) in RuO$_2$ promotes the generation of spin currents with pronounced anisotropic behavior, maximized when the charge current flows along the [010] direction. This unique capability yields the highest field-free switching ratio, maintaining stable SOT switching within an external field range of approximately 400 Oe. Notably, ASSE dominates the spin current, especially when the current is aligned with the [010] direction (θ = 90°). Here, the spin polarization component creates a substantial field-like effective field, surpassing the damping-like field from . This highlights the crucial role of in enhancing spin-torque efficiency and elucidating spin flow modulation mechanics in this crystalline context. Our study highlights the potential of RuO$_2$ as a powerful spin current generator, paving the way for practical applications in spin-torque switching technologies and other cutting-edge spintronic devices.

physics.app-ph

Out-of-Plane Polarization from Spin Reflection Induces Field-Free Spin-Orbit Torque Switching in Structures with Canted NiO Interfacial Moments

Realizing deterministic current-induced spin-orbit torque (SOT) magnetization switching, especially in systems exhibiting perpendicular magnetic anisotropy (PMA), typically requires the application of a collinear in-plane field, posing a challenging problem. In this study, we successfully achieve field-free SOT switching in the CoFeB/MgO system. In a Ta/CoFeB/MgO/NiO/Ta structure, spin reflection at the NiO interface, characterized by noncollinear spin structures with canted magnetization, generates a spin current with an out-of-plane spin polarization σz. We confirm the contribution of σz to the field-free SOT switching through measurements of the shift effect in the out-of-plane magnetization hysteresis loops under different currents. The incorporation of NiO as an antiferromagnetic insulator, mitigates the current shunting effect and ensures excellent thermal stability of the device. The sample with 0.8 nm MgO and 2 nm NiO demonstrates an impressive optimal switching ratio approaching 100% without an in-plane field. This breakthrough in the CoFeB/MgO system promises significant applications in spintronics, advancing us closer to realizing innovative technologies.

physics.app-ph

Single-shot laser-induced switching of an exchange biased antiferromagnet

Ultrafast manipulation of magnetic order has challenged our understanding the fundamental and dynamic properties of magnetic materials. So far single shot magnetic switching has been limited to ferrimagnetic alloys and multilayers. In ferromagnetic (FM)/antiferromagnetic (AFM) bilayers, exchange bias (He) arises from the interfacial exchange coupling between the two layers and reflects the microscopic orientation of the antiferromagnet. Here we demonstrate the possibility of single shot switching of the antiferromagnet (change of the sign and amplitude of He) with a single femtosecond laser pulse in IrMn/CoGd bilayers. We demonstrate the switching for a wide range of fluences for different layer thicknesses and compositions. Atomistic simulations predict ultrafast switching and recovery of the AFM magnetization on a timescale of 2 ps. These results provide the fastest and the most energy-efficient method to set the exchange bias and pave the way to potential applications for ultrafast spintronic devices.

cond-mat.mtrl-sci

Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3

Discoveries of interfacial topological Hall effect (THE) provide an ideal platform for exploring physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures such as strong spin-orbit coupling (SOC). Here we report the observation of a giant THE signal of 1.39 $μΩ\cdot$cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage.

cond-mat.mes-hall

Timescales and contribution of heating and helicity effect in helicity-dependent all-optical switching

The manipulation of the magnetic direction by using the ultrafast laser pulse is attractive for its great advantages in terms of speed and energy efficiency for information storage applications. However, the heating and helicity effects induced by circularly polarized laser excitation are entangled in the helicity-dependent all-optical switching (HD-AOS), which hinders the understanding of magnetization dynamics involved. Here, by applying a dual-pump laser excitation, first with a linearly polarized (LP) laser pulse followed by a circularly polarized (CP) laser pulse, we identify the timescales and contribution from heating and helicity effects in HD-AOS with a Pt/Co/Pt triple layer. When the sample is preheated by the LP laser pulses to a nearly fully demagnetized state, CP laser pulses with a much-reduced power switches the sample's magnetization. By varying the time delay between the two pump pulses, we show that the helicity effect, which gives rise to the deterministic helicity induced switching, onsets instantly upon laser excitation, and only exists for less than 0.2 ps close to the laser pulse duration of 0.15 ps. The results reveal that that the transient magnetization state upon which CP laser pulses impinge is the key factor for achieving HD-AOS, and importantly, the tunability between heating and helicity effects with the unique dual-pump laser excitation approach will enable HD-AOS in a wide range of magnetic material systems for the potential ultrafast spintronics applications.

cond-mat.mtrl-sci

Anisotropic ultrafast spin/valley dynamics in WTe2 films

WTe2 Weyl semimetal hosts the natural broken inversion symmetry and strong spin orbit coupling, making it promising for exotic spin/valley dynamics within a picosecond timescale. Here, we unveil an anisotropic ultrafast spin/valley dynamics in centimeter-scale, single-crystalline Td-WTe2 films using a femtosecond pump-probe technique at room temperature. We observe a transient (~0.8 ps) intra-valley transition and a subsequent polarization duration (~5 ps) during the whole spin/valley relaxation process. Furthermore, the relaxation exhibits the remarkable anisotropy of approximately six-fold and two-fold symmetries due to the intrinsic anisotropy along the crystalline orientation and the extrinsic matrix element effect, respectively. Our results offer a prospect for the ultrafast manipulation of spin/valleytronics in topological quantum materials for dissipationless high-speed spin/valleytronic devices.

cond-mat.mtrl-sci

Defect-Correlated Skyrmions and Controllable Generation in Perpendicularly Magnetized CoFeB Ultrathin Films

Skyrmions have attracted significant interest due to their topological spin structures and fascinating physical features. The skyrmion phase arises in materials with Dzyaloshinskii-Moriya (DM) interaction at interfaces or in volume of non-centrosymmetric materials. However, although skyrmions were generated experimentally, one critical intrinsic relationship between fabrication, microstructures, magnetization and the existence of skyrmions remains to be established. Here, two series of CoFeB ultrathin films with controlled atomic scale structures are employed to reveal this relationship. By inverting the growth order, the amount of defects can be artificially tuned, and skyrmions are shown to be preferentially formed at defect sites. The stable region and the density of the skyrmions can be efficiently controlled in the return magnetization loops by utilizing first-order reversal curves to reach various metastable states. These findings establish the general and intrinsic relationship from sample preparation to skyrmion generation, offering an universal method to control skyrmion density.

cond-mat.mes-hall

Observation of Shubnikov-de Haas Oscillations in Large-Scale Weyl Semimetal WTe2 Films

Topological Weyl semimetal WTe2 with large-scale film form has a promising prospect for new-generation spintronic devices. However, it remains a hard task to suppress the defect states in large-scale WTe2 films due to the chemical nature. Here, we significantly improve the crystalline quality and remove the Te vacancies in WTe2 films by post annealing. We observe the distinct Shubnikov-de Haas quantum oscillations in WTe2 films. The nontrivial Berry phase can be revealed by Landau fan diagram analysis. The Hall mobility of WTe2 films can reach 1245 cm2V-1s-1 and 1423 cm2V-1s-1 for holes and electrons with the carrier density of 5 * 10^19 cm^-3 and 2 * 10^19 cm^-3, respectively. Our work provides a feasible route to obtain high-quality Weyl semimetal films for the future topological quantum device applications.

cond-mat.mtrl-sci