Gate-Tunable Spin-to-Charge Conversion in Topological Insulator-Magnetic Insulator Heterostructures at Room Temperature

Wenxuan Sun; Yequan Chen; Ruijie Xu; Wenzhuo Zhuang; Di Wang; Long Liu; Anke Song; Guozhong Xing; Yongbing Xu; Rong Zhang; Cui-Zu Chang; Xuefeng Wang

doi:10.1002/adfm.202501880

arXiv · 2502.19736

Gate-Tunable Spin-to-Charge Conversion in Topological Insulator-Magnetic Insulator Heterostructures at Room Temperature

Wenxuan Sun·Yequan Chen·Ruijie Xu·Wenzhuo Zhuang·Di Wang·Long Liu·Anke Song·Guozhong Xing·Yongbing Xu·Rong Zhang·Cui-Zu Chang·Xuefeng Wang

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Abstract

Over the past decade, topological insulators have received enormous attention for their potential in energy-efficient spin-to-charge conversion, enabled by strong spin-orbit coupling and spin-momentum locked surface states. Despite extensive research, the spin-to-charge conversion efficiency, usually characterized by the spin Hall angle ({\theta}SH), remains low at room temperature. In this work, we employed pulsed laser deposition to synthesize high-quality ternary topological insulators (Bi0.1Sb0.9)2Te3 thin films on magnetic insulator Y3Fe5O12. We find that the value of {\theta}SH reaches ~0.76 at room temperature and increases to ~0.9 as the Fermi level is tuned to cross topological surface states via electrical gating. Our findings provide an innovative approach to tailoring the spin-to-charge conversion in topological insulators and pave the way for their applications in energy-efficient spintronic devices.

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Wenxuan Sun, Yequan Chen, Ruijie Xu, Wenzhuo Zhuang, Di Wang, Long Liu, Anke Song, Guozhong Xing, Yongbing Xu, Rong Zhang, Cui-Zu Chang, Xuefeng Wang. 2025-02-27. Gate-Tunable Spin-to-Charge Conversion in Topological Insulator-Magnetic Insulator Heterostructures at Room Temperature. https://doi.org/10.1002/adfm.202501880

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