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Yongkang Xia

Publications and source records attributed to Yongkang Xia.

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ETHead: Generating Expressive 3D Facial Animation and Head Movement from Speech

Generating expressive 3D talking heads solely from speech remains a significant challenge due to the scarcity of high-fidelity 3D data, which limits the modeling of complex emotional motion patterns. In this paper, we introduce \textbf{E}xpressive \textbf{T}alking \textbf{Head} (ETHead), a method for generating 3D facial and head motions that vividly align with the emotional content of input speech. To overcome the data limitations, we design a self-distillation framework that leverages large-scale 2D talking videos to pre-train a specialized speech encoder. By incorporating a novel emotion-modulated probabilistic masking mechanism, this framework aligns speech representations with expressive visual dynamics, allowing the encoder to extract features highly correlated with facial and head motions directly from audio. These features are then leveraged to guide 3D generation, enriching input cues and providing explicit supervision through a joint speech-motion latent space. Extensive experiments demonstrate that ETHead substantially outperforms state-of-the-art methods. Furthermore, our motion-aligned speech encoder can serve as a transferable module, offering a general solution for enhancing expressiveness in other 3D talking head animation frameworks. The project page is available at https://verdure-oss.github.io/ETHead.github.io/.

cs.GR

Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes

There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550nm) with silicon to fabricate photodiodes, leveraging epitaxial layer transfer (ELT) methods. Two ELT techniques, epitaxial lift-off (ELO) and macro-transfer printing (MTP), are compared for transferring GaAsSb films from InP substrates to Si, forming PIN diodes. Characterization through atomic force microscopy (AFM), and transmission electron microscopy (TEM) exhibits a high-quality, defect-free interface. Current-voltage (IV) measurements and capacitance-voltage (CV) analysis validate the quality and functionality of the heterostructures. Photocurrent measurements at room temperature and 200 K demonstrate the device's photo-response at 1550 nm, highlighting the presence of an active interface.

physics.app-ph