Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes

Manisha Muduli; Yongkang Xia; Seunghyun Lee; Nathan Gajowski; Chris Chae; Siddharth Rajan; Jinwoo Hwang; Shamsul Arafin; Sanjay Krishna

arXiv · 2407.17607

Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes

Manisha Muduli·Yongkang Xia·Seunghyun Lee·Nathan Gajowski·Chris Chae·Siddharth Rajan·Jinwoo Hwang·Shamsul Arafin·Sanjay Krishna

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Abstract

There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550nm) with silicon to fabricate photodiodes, leveraging epitaxial layer transfer (ELT) methods. Two ELT techniques, epitaxial lift-off (ELO) and macro-transfer printing (MTP), are compared for transferring GaAsSb films from InP substrates to Si, forming PIN diodes. Characterization through atomic force microscopy (AFM), and transmission electron microscopy (TEM) exhibits a high-quality, defect-free interface. Current-voltage (IV) measurements and capacitance-voltage (CV) analysis validate the quality and functionality of the heterostructures. Photocurrent measurements at room temperature and 200 K demonstrate the device's photo-response at 1550 nm, highlighting the presence of an active interface.

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Manisha Muduli, Yongkang Xia, Seunghyun Lee, Nathan Gajowski, Chris Chae, Siddharth Rajan, Jinwoo Hwang, Shamsul Arafin, Sanjay Krishna. 2024-07-24. Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes. https://arxiv.org/abs/2407.17607

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