arXiv subjects

Yoshikazu Mizuguchi

Publications and source records attributed to Yoshikazu Mizuguchi.

At least 127 records · Page 7Linked to original sources

arXiv2016

Specific Heat and Electrical Transport Properties of Sn0.8Ag0.2Te Superconductor

Sn0.8Ag0.2Te is a new superconductor with Tc ~ 2.4 K. The superconducting properties of Sn0.8Ag0.2Te have been investigated by specific heat measurements under magnetic fields. Bulk nature of superconductivity was confirmed from the amplitude of the specific heat jump at the superconducting transition, and the amplitude is consistent with fully-gapped superconductivity. Upper critical field was estimated from specific heat and electrical resistivity measurements under magnetic fields. The Hall coefficient was positive, suggesting that the Ag acts as a p-type dopant in Sn0.8Ag0.2Te.

cond-mat.supr-con↗

arXiv2016

Crystal structure instability of FeSe grains: Formation of non-superconducting phase at the grain surface

We investigated the magnetization and crystal structure of FeSe polycrystalline samples with various grain sizes. For the samples with large grains, a large magnetic critical current density Jc was observed. For the samples with small grains, superconductivity signals were not observed; instead, magnetization hysteresis, which is not a result of superconductivity, was observed. In the X-ray diffraction pattern for the samples with small grains, broad additional peaks were observed, corresponding to the formation of the non-superconducting (monoclinic) Fe-Se phase at the FeSe grain surface. The crystal structure instability at the grain surface would be the reason for the low superconducting properties of the Fe-chalcogenide polycrystalline wires investigated thus far.

cond-mat.supr-con↗

arXiv2016

High-Pressure Synthesis and Superconductivity of Ag-doped Topological Crystalline Insulator SnTe (Sn1-xAgxTe with x = 0-0.5)

We have synthesized the single-phase polycrystalline samples of Sn1-xAgxTe, Ag-doped topological crystalline insulator SnTe, with a range of x = 0-0.5 using a high-pressure synthesis method. The crystal structure of Sn1-xAgxTe at room temperature is a cubic NaCl-type structure, which does not vary upon Ag substitution. Bulk superconductivity with a transition temperature of 2.4 K was observed for x = 0.15-0.25, and the optimal Ag content was x = 0.2. The Sn1-xAgxTe superconducting phase will be useful for understanding the superconductivity nature and mechanisms of the carrier-doped SnTe system.

cond-mat.supr-con↗

arXiv2016

Thermoelectric properties of new Bi-chalcogenide layered compounds

The layered Bi-chalcogenide compounds have been drawing much attention as a new layered superconductor family since 2012. Due to the rich variation of crystal structure and constituent elements, the development of new physics and chemistry of the layered Bi-chalcogenide family and its applications as functional materials have been expected. Recently, it was revealed that the layered Bi chalcogenides can show a relatively high thermoelectric performance (ZT = 0.36 in LaOBiSSe at ~650 K). Here, we show the crystal structure variation of the Bi-chalcogenide family and their thermoelectric properties. Finally, the possible strategies for enhancing the thermoelectric performance are discussed on the basis of the experimental and the theoretical facts reviewed here.

cond-mat.mtrl-sci↗

arXiv2015

Structures and Optical Absorption of Bi2OS2 and LaOBiS2

The band gaps of isostructural Bi2OS2 and LaOBiS2 were examined using optical absorption and discussed with the band structures calculated based on the crystal structures determined using synchrotron X-ray diffraction. The Bi 6p and S 3p orbitals in the Bi-S plane were computationally predicted to constitute the bands near the Fermi level. The optical reflectance spectra of Bi2OS2 and LaOBiS2 showed optical band gaps of ca. 1.0 eV, which were close to the computationally calculated direct band gaps of ca. 0.8 eV. Our results show that Bi2OS2 and LaOBiS2 are semiconductors containing direct band gaps of 0.8-1.0 eV, and they are suggested to be candidates for optoelectronic materials in the near-infrared region without highly toxic elements.

cond-mat.mtrl-sci↗

arXiv2015

Electronic Origins of Large Thermoelectric Power Factor of LaOBiS2-xSex

We examined the electrical transport properties of densified LaOBiS2-xSex, which constitutes a new family of thermoelectric materials. The power factor increased with increasing concentration of Se, i.e., Se substitution led to an enhanced electrical conductivity, without suppression of the Seebeck coefficient. Hall measurements indicated that the low electrical resistivity resulted from increases in the carrier mobility, and the decrease in carrier concentration led to large absolute values of the Seebeck coefficient of the system.

cond-mat.mtrl-sci↗

arXiv2015

Superconductivity phase diagram of Se-substituted CeO0.5F0.5Bi(S1-xSex)2

We investigated the effects of Se substitution on the lattice constants and superconducting properties of CeO0.5F0.5Bi(S1-xSex)2. With increasing Se concentration, the a lattice constant increased, while the c lattice constant did not show any significant increase between x = 0.1 and x = 0.5. Bulk superconductivity was observed in samples with x = 0.2-0.4, and the superconducting transition temperature was the highest at x = 0.3. The obtained superconductivity phase diagram was compared to those of LaO0.5F0.5Bi(S1-xSex)2 and NdO0.5F0.5Bi(S1-xSex)2.

cond-mat.supr-con↗

arXiv2015

High thermoelectric performance and low thermal conductivity of densified LaOBiSSe

In this study, we examined the thermoelectric properties of the layered bismuth-chalcogenide-based (BiCh2-based) compound LaOBiSSe, which is expected to be a new candidate material for thermoelectric applications. Densified samples were obtained with a hot-press method. The results of the X-ray diffraction measurements showed that the samples obtained were weakly oriented. This affected the resistivity (r) and Seebeck coefficient (S) of the samples because they are dependent upon the orientation of the crystal structure. The values obtained for the power factor (S2/r) when measured perpendicular to the pressing direction (P1) were higher than that when measured parallel to the pressing direction (P2). The thermal conductivity (k) of the samples was also sensitive to the orientation. The values of k measured along P2 were lower than that measured along P1. The highest figure-of-merit (approximately 0.36) was obtained at around 650 K in both directions, i.e., P1 and P2.

cond-mat.mtrl-sci↗

arXiv2015

Pronounced - Log T Divergence in Specific Heat of Nonmetallic CeOBiS$_2$: A Mother Phase of BiS$_2$-Based Superconductor

The low-temperature properties of CeOBiS$_2$ single crystals are studied by electrical resistivity, magnetization, and specific heat measurements. Ce 4f -electrons are found to be in a well-localized state split by crystalline-electric-field (CEF) effects. The CEF ground state is a pure $J_z$ = $\pm$ 1/2 doublet, and excited doublets are located far above. At low temperatures in zero field, we observe pronounced $-\log T$ divergence in the specific heat, revealing the presence of quantum critical fluctuations of 4f magnetic moments near a quantum critical point (QCP). Considering that CeOBiS$_2$ is a nonmetal, this phenomenon cannot be attributed to the competition between Kondo and the Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions as in numerous f-electron-based strongly correlated metals, indicating an unconventional mechanism. We suggest that CeOBiS$_2$ is the first material found to be located at a QCP among geometrically frustrated nonmetallic magnets.

cond-mat.str-el↗

arXiv2015

Chemical pressure effect on superconductivity of BiS2-based Ce1-xNdxO1-yFyBiS2 and Nd1-zSmzO1-yFyBiS2

We have systematically investigated the crystal structure and the magnetic properties of BiS2-based superconductor Ce1-xNdxO1-yFyBiS2 (x = 0 - 1.0, y = 0.3, 0.5 and 0.7) and Nd1-zSmzO1-yFyBiS2 (x = 0 - 0.8, y = 0.3, 0.5 and 0.7). In the REOBiS2 system, both crystal structure and physical properties are tunable by mixing the RE (RE = rare earth) site with Ce, Nd and Sm due to the difference of ionic radius of RE. In the Ce1-xNdxO1-yFyBiS2 system, bulk superconductivity is observed for x = 1.0 with y = 0.3 and x = 0.5 - 1.0 with y = 0.5. The transition temperature (Tc) increases with increasing Nd concentration. The highest Tc is 4.8 K for x = 1.0 with y = 0.5 in the Ce1-xNdxO1-yFyBiS2 system. By the Nd substitution for Ce, lattice contraction along the a axis is generated while the c axis does not show a remarkable dependence on Nd concentration. The lattice constant of c decreases with increasing F concentration. Furthermore, we found that the Nd site can be replaced by smaller Sm ions up to z = 0.8 in Nd1-zSmzO1-yFyBiS2. Bulk superconductivity is observed within z = 0 - 0.8 for y = 0.3 and z = 0 - 0.6 for y = 0.5. The Tc increases with increasing Sm concentration. The highest Tc is 5.6 K for z = 0.8 with y = 0.3. With increasing Sm concentration, the lattice constant of a decreases while the lattice constants of c does not show a remarkable dependence on Sm concentration. We found that the chemical pressure generated by systematic solution of the RE site in the blocking layer commonly induces lattice contraction along the a axis in Ce1-xNdxO1-yFyBiS2 and Nd1-zSmzO1-yFyBiS2. The obtained results indicate that both optimal F concentration and uniaxial lattice contraction along the a axis generated by chemical pressure are essential for the inducement of bulk superconductivity in the REO1-yFyBiS2 system.

cond-mat.supr-con↗

arXiv2015

In-plane chemical pressure essential for superconductivity in BiCh2-based (Ch: S, Se) layered structure

BiCh2-based superconductors (Ch: S, Se) are a new series of layered superconductor. However, mechanisms for the emergence of superconductivity in BiCh2-based superconductors have not been clarified. In this study, we have investigated crystal structure of two series of optimally-doped BiCh2-based superconductors, Ce1-xNdxO0.5F0.5BiS2 and LaO0.5F0.5Bi(S1-ySey)2, using powder synchrotron x-ray diffraction in order to reveal the relationship between crystal structure and superconducting properties of the BiCh2-based family. We have found that an enhancement of in-plane chemical pressure would commonly induce bulk superconductivity in both systems. Furthermore, we have revealed that superconducting transition temperature for REO0.5F0.5BiCh2 superconductors could universally be determined by degree of in-plane chemical pressure.

cond-mat.supr-con↗

arXiv2015

In-plane Charge Fluctuations in Bismuth Sulfide Superconductors

Evidence for local charge fluctuations linked to a charge disproportionation of the Bi ions in the distorted lattice of superconducting LaO$_{1-x}$F$_{x}$ BiS$_{2}$ is presented. In-plane short-range distortions of sulfur atoms up to 0.3 Å in magnitude break site symmetry and create two distinct environments around Bi. Out-of-plane motion of apical sulfur brings it closer to the La-O/F doping layer with increasing $x$ that may lead to a charge transfer conduit between the doping layers and the superconducting BiS$_{2}$ planes. The mechanism for superconductivity may arise from the interplay between charge density fluctuations and an enhanced spin-orbit coupling suggested theoretically, that induces spin polarization.

cond-mat.supr-con↗

arXiv2015

Evolution of superconductivity in BiS2-based superocnductor LaO0.5F0.5Bi(S1-xSex)2

We have systematically investigated the crystal structure, magnetic susceptibility, and electrical resistivity of the BiS2-based superconductor LaO0.5F0.5Bi(S1-xSex)2 (x = 0 - 0.7). With expanding lattice volume by Se substitution, bulk superconductivity was induced for x > 0.2, and the highest Tc of 3.8 K was observed in x = 0.5 (LaO0.5F0.5BiSSe). Metallic conductivity was observed for x > 0.3 in the resistivity measurement, whereas semiconducting-like behavior was observed for x < 0.2. The induction of bulk superconductivity by the partial substitution of S by Se in the LaO0.5F0.5BiS2 superconductor should be positively linked to the enhancement of metallic conductivity.

cond-mat.supr-con↗

arXiv2014

Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex

We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS2-xSex. The partial substitution of S by Se produced the enhancement of electrical conductivity (metallic characteristics) in LaOBiS2-xSex. The power factor largely increased with increasing Se concentration. The highest power factor was 4.5 uW/cmK2 at around 470 deg. C for LaOBiS1.2Se0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 at around 470 deg. C in LaOBiS1.2Se0.8.

cond-mat.mtrl-sci↗

arXiv2014

Increase in Tc and change of crystal structure by high-pressure annealing in BiS2-based superconductor CeO0.3F0.7BiS2

Recently, several types of BiS2-based superconductor such as Bi4O4S3, REO1-xFxBiS2 (RE: rare earth) and Sr1-xLaxFBiS2 have been discovered. In this study, we have investigated the crystal structure and the superconducting properties for two kinds of polycrystalline samples (As-grown and high-pressure-annealed samples) of the BiS2-based superconductor CeO0.3F0.7BiS2. We found that both the As-grown and the high-pressure-annealed CeO0.3F0.7BiS2 samples show bulk superconductivity. A higher Tc was observed in the high-pressure-annealed sample. The Tc of CeO0.3F0.7BiS2 increased from Tczero = 2.7 K to Tczero = 3.7 K by high-pressure annealing. The lattice constant of a and c axis did not show remarkable differences between the As-grown and the high-pressure-annealed samples. Nevertheless, the peak symmetry of the (200) peak seemed to become more symmetric while the (004) peak did not show such a difference, indicating that the crystal structure within the ab plane changed to a higher-symmetric phase, a perfect tetragonal, by high-pressure annealing in CeO0.3F0.7BiS2.

cond-mat.supr-con↗

arXiv2014

Element Substitution Effect on Superconductivity in BiS2-Based NdO_{1-x}F_xBiS_2

Recently, new layered superconductors having a BiS2-type conduction layer have been discovered. NdO1-xFxBiS2 is a typical BiS2-based superconductor with a maximum Tc of 5.4 K. In this study, the effect of element substitution within the superconducting layer of BiS2-based NdO0.5F0.5BiS2 was investigated. We systematically synthesized two kinds of polycrystalline samples of NdO0.5F0.5Bi(S1-xSex)2 and NdO0.5F0.5Bi1-ySbyS2 by a two-step solid-state reaction method. The phase purity and the changes in lattice constants were investigated by x-ray diffraction. The superconducting properties were investigated by magnetic susceptibility and electrical resistivity measurements. It was found that the partial substitution of S by Se resulted in the uniaxial lattice expansion along the a axis. The superconducting transition temperature were gradually degraded with increasing Se concentration in NdO0.5F0.5Bi(S1-xSex)2. When Bi was partially substituted by Sb, the uniaxial lattice contraction along the c axis was observed in NdO0.5F0.5Bi1-ySbyS2. In the Sb-substituted system, a metal-insulator transition was observed with increasing Sb concentration.

cond-mat.supr-con↗

arXiv2014

Soft x-ray photoemission study of new BiS$_{2}$-layered superconductor LaO$_{1-x}$F$_{x}$BiS$_{2}$

We use core level and valence band soft x-ray photoemission spectroscopy (SXPES) to investigate electronic structure of new BiS$_{2}$ layered superconductor LaO$_{1-x}$F$_{x}$BiS$_{2}$. Core level spectra of doped samples show a new spectral feature at the lower binding energy side of the Bi 4${f}$ main peak, which may be explained by core-hole screening with metallic states near the Fermi level ($E_{\rm F}$). Experimental electronic structure and its ${x}$ dependence (higher binding energy shift of the valence band as well as appearance of new states near $E_{\rm F}$ having dominant Bi 6${p}$ character) were found to be consistent with the predictions of band structure calculations in general. Noticeable deviation of the spectral shape of the states near $E_{\rm F}$ from that of calculations might give insight into the interesting physical properties. These results provide first experimental electronic structure of the new BiS$_{2}$ layered superconductors.

cond-mat.supr-con↗

arXiv2014

Role of the Ce valence in the coexistence of superconductivity and ferromagnetism of CeO$_{1-x}$F$_{x}$BiS$_{2}$ revealed by Ce $L_3$-edge x-ray absorption spectroscopy

We have performed Ce $L_3$-edge x-ray absorption spectroscopy (XAS) measurements on CeO$_{1-x}$F$_x$BiS$_2$, in which the superconductivity of the BiS$_2$ layer and the ferromagnetism of the CeO$_{1-x}$F$_x$ layer are induced by the F-doping, in order to investigate the impact of the F-doping on the local electronic and lattice structures. The Ce $L_3$-edge XAS spectrum of CeOBiS$_2$ exhibits coexistence of $4f^1$ (Ce$^{3+}$) and $4f^0$ (Ce$^{4+}$) state transitions revealing Ce mixed valency in this system. The spectral weight of the $4f^0$ state decreases with the F-doping and completely disappears for $x>0.4$ where the system shows the superconductivity and the ferromagnetism. The results suggest that suppression of Ce-S-Bi coupling channel by the F-doping appears to drive the system from the valence fluctuation regime to the Kondo-like regime, leading to the coexistence of the superconducting BiS$_2$ layer and the ferromagnetic CeO$_{1-x}$F$_x$ layer.

cond-mat.str-el↗