arXiv subjects

Yoshikazu Mizuguchi

Publications and source records attributed to Yoshikazu Mizuguchi.

At least 109 records · Page 6Linked to original sources

arXiv2019

Effect of Indium doping on the superconductivity of layered oxychalcogenide La2O2Bi3Ag1-xInxS6

We report on the substitution effect of Indium (In) at the Ag site of layered oxychalcogenide La2O2Bi3Ag1-xInxS6. The Tc decreases with increasing In concentration. A hump in the normal state resistivity at an anomaly temperature (T*) near 180 K was observed for all the samples. The anomaly in the resistivity at T* is indicating the possible occurrence of a charge-density-wave (CDW) transition. The T* does not markedly change by In doping. The x dependence of Seebeck coefficient suggests that carrier concentration does not change by In doping. The EDX analysis indicates small amount of Bi deficiency, which suggests that the Bi site is slightly substituted by In. The CDW transition is robust against the In substitution at Ag site, while Tc is decreasing due to the Bi site substitution by In. On the basis of those analyses, we propose that the suppression of superconductivity in the In-doped La2O2Bi3Ag1-xInxS6 system is caused by negative in-plane chemical pressure effect and partial substitution of In for the in-plane Bi site.

cond-mat.supr-con↗

arXiv2019

Effect of Bi Substitution on Thermoelectric Properties of SbSe2-based Layered Compounds NdO$_{0.8}$F$_{0.2}$Sb$_{1-x}$Bi$_x$Se$_2$

Although SbSe2-based layered compounds have been predicted to be high-performance thermoelectric materials and topological materials, most of these compounds obtained experimentally have been insulators so far. Here, we present the effect of Bi substitution on the thermoelectric properties of SbSe2-based layered compounds NdO0.8F0.2Sb1-xBixSe2 (x = 0-0.4). The room temperature electrical resistivity is decreased to 8.0 * 10^-5 ohmm for x = 0.4. The electrical power factor is calculated to be 1.4 * 10^-4 W/mK^2 at 660 K, which is in reasonable agreement with combined Jonker and Ioffe analysis. The room-temperature lattice thermal conductivity of less than 1 W/mK is almost independent of x, in contrast to the point-defect scattering model for conventional alloys. The present work provides an avenue for exploring SbSe2-based insulating and BiSe2-based conducting systems.

cond-mat.mtrl-sci↗

arXiv2018

Material Development and Physical Properties of BiS2-Based Layered Compounds

In 2012, we discovered superconductivity in Bi4O4S3 and LaO1-xFxBiS2, whose crystal structures are composed of alternate stacks of a BiS2-type conduction layer and a blocking layer. Since the discovery, many related superconductors and functional materials have been synthesized. Furthermore, the possibility of unconventional superconductivity has been proposed in recent theoretical and experimental studies. In addition, notable correlations between local structure and physical properties have been revealed in the BiS2-based systems. In this review article, we summarize the material development (probably all the compounds) and physical properties of BiS2-related materials developed in the last six years. The key parameters for the emergence of bulk superconductivity in the BiS2-based compounds are carrier doping to the parent phase (band insulator), pressure-induced structural transition, in-plane chemical pressure, and the suppression of in-plane disorder. We systematically review those parameters and the method of designing new superconductors with BiS2 layers. In addition, studies of BiS2-based compounds as thermoelectric materials are briefly reviewed.

cond-mat.supr-con↗

arXiv2018

Electrical and Thermal Transport of Layered Bismuth-chalcogenide EuBiS2F at temperatures between 300 and 623 K

We demonstrate the electrical and thermal transport of layered bismuth-based sulfide EuBiS2F from 300 to 623 K. Although significant hybridization between Eu 4f and Bi 6p electrons was reported previously, the carrier transport of the compound is similar to those of F-doped LaBiS2O, at least above 300 K. The lattice thermal conductivity is lower than that of isostructural SrBiS2F, which is attributed to heavier atomic mass of Eu ions.

cond-mat.supr-con↗

arXiv2018

Na1-xSn2P2 as a new member of van der Waals-type layered tin pnictide superconductors

Superconductors with a van der Waals (vdW) structure have attracted a considerable interest because of the possibility for truly two-dimensional (2D) superconducting systems. We recently reported NaSn2As2 as a novel vdW-type superconductor with transition temperature (Tc) of 1.3 K. Herein, we present the crystal structure and superconductivity of new material Na1-xSn2P2 with Tc = 2.0 K. Its crystal structure consists of two layers of a buckled honeycomb network of SnP, bound by the vdW forces and separated by Na ions, as similar to that of NaSn2As2. Amount of Na deficiency (x) was estimated to be 0.074(18) using synchrotron X-ray diffraction. Bulk nature of superconductivity was confirmed by the measurements of electrical resistivity, magnetic susceptibility, and specific heat. First-principles calculation using density functional theory shows that Na1-xSn2P2 and NaSn2As2 have comparable electronic structure, suggesting higher Tc of Na1-xSn2P2 is resulted from increased density of states at the Fermi level due to Na deficiency. Because there are various structural analogues with tin-pnictide (SnPn) conducting layers, our results indicate that SnPn-based layered compounds can be categorized into a novel family of vdW-type superconductors, providing a new platform for studies on physics and chemistry of low-dimensional superconductors.

cond-mat.supr-con↗

arXiv2018

Superconductivity in layered Oxychalcogenide La2O2Bi3AgS6

We report the superconductivity in layered oxychalcogenide La2O2Bi3AgS6 compound. The La2O2Bi3AgS6 compound has been reported recently by our group, which has a tetragonal structure with the space group P4/nmm. The crystal structure of La2O2Bi3AgS6 can be regarded as alternate stacks of LaOBiS2-type layer and rock-salt-type (Bi,Ag)S layer. We measured low-temperature electrical resistivity and observed superconductivity at 0.5 K. The observation of superconductivity in the La2O2Bi3AgS6 should provide us with the successful strategy for developing new superconducting phases by the insertion of a rock-salt-type chalcogenide layer into the van der Waals gap of BiS2-based layered compound like LaOBiS2.

cond-mat.supr-con↗

arXiv2018

Superconductivity in La1-xCexOBiSSe: carrier doping by mixed valence of Ce ions

We report the effects of Ce substitution on structural, electronic, and magnetic properties of layered bismuth-chalcogenide La1-xCexOBiSSe (x = 0-0.9), which are newly obtained in this study. Metallic conductivity was observed for x > 0.1 because of electron carriers induced by mixed valence of Ce ions, as revealed by bond valence sum calculation and magnetization measurements. Zero resistivity and clear diamagnetic susceptibility were obtained for x = 0.2-0.6, indicating the emergence of bulk superconductivity in these compounds. Dome-shaped superconductivity phase diagram with the highest transition temperature (Tc) of 3.1 K, which is slightly lower than that of F-doped LaOBiSSe (Tc = 3.7 K), was established. The present study clearly shows that the mixed valence of Ce ions can be utilized as an alternative approach for electron-doping in layered bismuth-chalcogenides to induce superconductivity.

cond-mat.supr-con↗

arXiv2018

Synthesis, Crystal Structure, and Thermoelectric Properties of Layered Antimony Selenides REOSbSe2 (RE = La, Ce)

Inspired by the recent first-principles calculations showing the high thermoelectric performance of layered pnictogen chalcogenides, we experimentally characterise the crystal structure and high-temperature transport properties of the layered antimony selenides REOSbSe2 (RE = La, Ce). The crystal structure of REOSbSe2 was the tetragonal P4/nmm space group, consisting of alternate stacks of SbSe2 and REO layers. These two compounds were n-type semiconductors. The optical band gaps of LaOSbSe2 and CeOSbSe2 were evaluated to be 1.0 and 0.6 eV, respectively. The room-temperature thermal conductivity was 1.5 Wm-1K-1 for RE = La and 0.8 Wm-1K-1 for RE = Ce. These relatively low thermal conductivities were comparable to those of isostructural layered bismuth chalcogenides. We substituted O2- with F- ions to introduce electrons as charged carriers to optimize the thermoelectric performance, but increasing the electrical conductivity was still challenging.

cond-mat.mtrl-sci↗

arXiv2018

Superconductivity in REO0.5F0.5BiS2 with high-entropy-alloy-type blocking layers

We synthesized new REO0.5F0.5BiS2 (RE: rare earth) superconductors with the high-entropy-alloy-type (HEA-type) REO blocking layers. According to the RE concentration and the RE ionic radius, the lattice constant of a systematically changed in the HEA-type samples. A sharp superconducting transition was observed in the resistivity measurements for all the HEA-type samples, and the transition temperature of the HEA-type samples was higher than that of typical REO0.5F0.5BiS2. The sharp superconducting transition and the enhanced superconducting properties of the HEA-type samples may indicate the effectiveness of the HEA states of the REO blocking layers in the REO0.5F0.5BiS2 system.

cond-mat.supr-con↗

arXiv2018

Indication of unconventional superconductivity in layered bismuth chalcogenide superconductor LaO0.6F0.4Bi(S,Se)2 revealed by Se isotope effect

We have investigated the Se isotope effect in layered bismuth chalcogenide (BiCh2-based) superconductor LaO0.6F0.4Bi(S,Se)2 with 76Se and 80Se. For all examined samples, the Se concentration, which is linked to the superconducting properties, is successfully controlled within x = 1.09-1.14 in LaO0.6F0.4BiS2-xSex. From the magnetization and electrical resistivity measurements, changes in Tc are not observed for the LaO0.6F0.4Bi(S,Se)2 samples with 76Se and 80Se isotopes. Our results suggest that pairing in the BiCh2-based superconductors is not mediated by phonons, and unconventional superconductivity states may emerge in the BiCh2 layers of LaO0.6F0.4Bi(S,Se)2.

cond-mat.supr-con↗

arXiv2017

Synthesis, Crystal Structure, and Physical Properties of New Layered Oxychalcogenide La2O2Bi3AgS6

We have synthesized a new layered oxychalcogenide La2O2Bi3AgS6. From synchrotron X-ray diffraction and Rietveld refinement, the crystal structure of La2O2Bi3AgS6 was refined using a model of the P4/nmm space group with a = 4.0644(1) Å and c = 19.412(1) Å, which is similar to the related compound LaOBiPbS3, while the interlayer bonds (M2-S1 bonds) are apparently shorter in La2O2Bi3AgS6. The tunneling electron microscopy (TEM) image confirmed the lattice constant derived from Rietveld refinement (c ~ 20 Å). The electrical resistivity and Seebeck coefficient suggested that the electronic states of La2O2Bi3AgS6 are more metallic than those of LaOBiS2 and LaOBiPbS3. The insertion of a rock-salt-type chalcogenide into the van der Waals gap of BiS2-based layered compounds, such as LaOBiS2, will be a useful strategy for designing new layered functional materials in the layered chalcogenide family.

cond-mat.mtrl-sci↗

arXiv2017

Evolution of Anisotropic Displacement Parameters and Superconductivity with Chemical Pressure in BiS2-Based REO0.5F0.5BiS2 (RE = La, Ce, Pr, and Nd)

In order to understand the mechanisms behind the emergence of superconductivity by the chemical pressure effect in REO0.5F0.5BiS2 (RE = La, Ce, Pr, and Nd), where bulk superconductivity is induced by the substitutions with a smaller-radius RE, we performed synchrotron powder X-ray diffraction, and analyzed the crystal structure and anisotropic displacement parameters. With the decrease of the RE3+ ionic radius, the in-plane disorder of the S1 sites significantly decreased, very similar to the trend observed in the Se-substituted systems: LaO0.5F0.5BiS2-xSex and Eu0.5La0.5FBiS2-xSex. Therefore, the emergence of bulk superconductivity upon the suppression of the in-plane disorder at the chalcogen sites is a universal scenario for the BiCh2-based superconductors. In addition, we indicated that the amplitude of vibration along the c-axis of the in-plane chalcogen sites may be related to the Tc in the BiCh2-based superconductors.

cond-mat.supr-con↗

arXiv2017

SnAs-based layered superconductor NaSn2As2

Superconductivity with exotic properties has often been discovered in materials with a layered (two-dimensional) crystal structure. The low dimensionality affects the electronic structure of materials, which could realize a high transition temperature (Tc) and/or unconventional pairing mechanisms. Here, we report the superconductivity in a layered tin arsenide NaSn2As2. The crystal structure consists of (Sn2As2)2- bilayers, which is bound by van-der-Waals forces, separated by Na+ ions. Measurements of electrical resistivity and specific heat confirm the bulk nature of superconductivity of NaSn2As2 with Tc of 1.3 K. Our results propose that the SnAs layers will be a basic structure providing another universality class of a layered superconducting family, and it provides a new platform for the physics and chemistry of low-dimensional superconductors with lone pair electrons.

cond-mat.supr-con↗

arXiv2017

Bulk Superconductivity Induced by Se Substitution in BiCh2-Based Layered Compounds Eu0.5Ce0.5FBiS2-xSex

We report the effect of Se substitution on the crystal structure and superconductivity of BiCh2-based (Ch: S, Se) layered compounds Eu0.5Ce0.5FBiS2-xSex (x = 0-1). Crystal structure analysis showed that both lattice constants, a and c, increased with increasing x, which is different from the related La-doped system, such as Eu0.5La0.5FBiS2-xSex. This is due to Se substitution for both in-plane and out-of-plane Ch sites in the present Ce-doped system. Zero resistivity was observed for x = 0.2-1 above 2 K. Superconducting properties of Eu0.5Ce0.5FBiS2-xSex was investigated by magnetic susceptibility, and the highest superconducting transition temperature of 3.5 K was obtained for x = 0.6 with a large shielding volume fraction. The emergence of bulk superconductivity and metallic conductivity can be qualitatively described in terms of increased in-plane chemical pressure effect. A magnetic anomaly below 8 K, probably because of ferromagnetic order of magnetic moment of Ce3+ ions, coexists with bulk superconductivity in BiCh2 layer. Since the effect of Se substitution on the magnetic transition temperature is ignorable, we suggest that the coupling between the magnetic order at the (Eu,Ce)F layer and superconductivity at the Bi(S,Se)2 layer is weak.

cond-mat.supr-con↗

arXiv2017

Charge Fluctuations in the NdO$_{1-x}$F$_{x}$BiS$_{2}$ Superconductors

The local atomic structure of superconducting NdO$_{1-x}$F$_{x}$BiS$_{2}$ ($x$=0.2 and 0.4) is investigated using neutron diffraction and the pair density function analysis technique. In the non-superconducting $x$=0.2 composition, ferrodistortive displacements of the pyramidal sulfur ions break the tetragonal symmetry and a superlattice structure emerges with peaks appearing at $h+k$ odd reflections superimposed on the even reflections of the $P4/nmm$ symmetry. In the superconducting $x$=0.4 composition, similar ferrodistortive displacements are observed but with different magnitudes coupled with in-plane Bi distortions. The distortions are indicative of charge fluctuations that may lead to charge localization and suppression of superconductivity.

cond-mat.supr-con↗

arXiv2017

Intrinsic Phase Diagram of Superconductivity in the BiCh2-based System Without In-plane Disorder

We have investigated the crystal structure and physical properties of LaO1-xFxBiSSe to reveal the intrinsic superconductivity phase diagram of the BiCh2-based layered compound family. From synchrotron X-ray diffraction and Rietveld refinements with anisotropic displacement parameters, we clearly found that the in-plane disorder in the BiSSe layer was fully suppressed for all x. In LaO1-xFxBiSSe, metallic conductivity and superconductivity are suddenly induced by electron doping even at x = 0.05 and 0.1 with a monoclinic structure. In addition, x (F concentration) dependence of the transition temperature (Tc) for x = 0.2-0.5 with a tetragonal structure shows an anomalously flat phase diagram. With these experimental facts, we have proposed the intrinsic phase diagram of the ideal BiCh2-based superconductors with less in-plane disorder.

cond-mat.supr-con↗

arXiv2017

Bi Substitution Effects on Superconductivity of Valence-Skip superconductor AgSnSe2

We have synthesized AgSn1-xBixSe2 polycrystalline samples to investigate the effect of partial substitution of mixed-valence Sn by Bi3+ to the superconductivity of the valence-skip superconductor AgSnSe2. The Bi-substituted AgSn1-xBixSe2 were obtained up to x = 0.2, but an insulating phase Ag2SnBi2Se5 with a NaCl-type structure showed up above x = 0.3. The superconducting transition temperature increased from 4.5 K (x = 0) to 5.0 K (x = 0.1) by Bi substitution. The enhancement of superconductivity by the suppression of the valence-skip states of Sn suggests that the valence-skip states of Sn are not positively linked to the pairing mechanisms of superconductivity in the AgSnSe2 system.

cond-mat.supr-con↗

arXiv2016

Bulk Superconductivity Induced by In-plane Chemical Pressure Effect in Eu0.5La0.5FBiS2-xSex

We have investigated Se substitution effect to superconductivity of an optimally-doped BiS2-based superconductor Eu0.5La0.5FBiS2. Eu0.5La0.5FBiS2-xSex samples with x = 0-1 were synthesized. With increasing x, in-plane chemical pressure is enhanced. For x = 0.6, 0.8, and 1, superconducting transitions with a large shielding volume fraction are observed in magnetic susceptibility measurements, and the highest Tc is 3.8 K for x = 0.8. From low-temperature electrical resistivity measurements, a zero-resistivity state is observed for all the samples, and the highest Tc is observed for x = 0.8. With increasing Se concentration, characteristics of electrical resistivity changes from semiconducting-like to metallic, suggesting that the emergence of bulk superconductivity is linked with the enhanced metallicity. A superconductivity phase diagram of the Eu0.5La0.5FBiS2-xSex superconductor is established. Temperature dependences of electrical resistivity show an anomalous two-step transition under high magnetic fields. Hence, the resistivity data are analyzed with assuming in-plane anisotropy of upper critical field.

cond-mat.supr-con↗