arXiv subjects

Youguang Zhang

Publications and source records attributed to Youguang Zhang.

29 records · Page 2Linked to original sources

arXiv2018

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω.μm2, which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high temperature diffusion during annealing. The switching critical current density could be lower than 3.0 MA.cm-2 for devices with a 45 nm radius.

physics.app-ph↗

arXiv2017

Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures

Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbital coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM.

cond-mat.mtrl-sci↗

arXiv2016

Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions

It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tunnel magnetoresistance (TMR). To explore the essential influence caused by capping layers, we carry out ab initio calculations on TMR in the X(001)|CoFe(001)|MgO(001)|CoFe(001)|X(001) MTJ, where X represents the capping layer material which can be tungsten, tantalum or hafnium. We report TMR in different MTJs and demonstrate that tungsten is an ideal candidate for a giant TMR ratio. The transmission spectrum in Brillouin zone is presented. It can be seen that in the parallel condition of MTJ, sharp transmission peaks appear in the minority-spin channel. This phenomenon is attributed to the resonant tunnel transmission effect and we explained it by the layer-resolved density of states (DOS). In order to explore transport properties in MTJs, the density of scattering states (DOSS) was studied from the point of band symmetry. It has been found that CoFe|tungsten interface blocks scattering states transmission in the anti-parallel condition. This work reports TMR and transport properties in MTJs with different capping layers, and proves that tungsten is a proper capping layer material, which would benefit the design and optimization of MTJs.

physics.comp-ph↗

arXiv2016

Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures

Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM). Large interfacial perpendicular magnetic anisotropy (PMA) is required to achieve high thermal stability. Here we use first-principles calculations to investigate the magnetic anisotropy energy (MAE) of MgO/CoFe/capping layer structures, where the capping materials include 5d metals Hf, Ta, Re, Os, Ir, Pt, Au and 6p metals Tl, Pb, Bi. We demonstrate that it is feasible to enhance PMA by using proper capping materials. Relatively large PMA is found in the structures with capping materials of Hf, Ta, Os, Ir and Pb. More importantly, the MgO/CoFe/Bi structure gives rise to giant PMA (6.09 mJ/m2), which is about three times larger than that of the MgO/CoFe/Ta structure. The origin of the MAE is elucidated by examining the contributions to MAE from each atomic layer and orbital. These findings provide a comprehensive understanding of the PMA and point towards the possibility to achieve advanced-node STT-MRAM with high thermal stability.

cond-mat.mtrl-sci↗

arXiv2016

Amplicification of Voltage Controlled Magnetic Anisotropy Effect with Negative Capacitance

The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability issues therefore hinder the timetable for STT Magnetic Random Access Memory (STT-MRAM) to mass market. By utilizing Voltage Controlled Magnetic Anisotropy (VCMA) effect, the MTJ can be switched by voltage effect and is postulated to achieve ultra-low power (fJ). However, the VCMA coefficient measured in experiments is far too small for MTJ dimension below 100 nm. Here in this work, a novel approach for the amplification of VCMA effect which borrow ideas from negative capacitance is proposed. The feasibility of the proposal is proved by physical simulation and in-depth analysis.

cond-mat.mes-hall↗

arXiv2016

A gate-variable spin current demultiplexer based on graphene

Spintronics, which utilizes spin as information carrier, is a promising solution for nonvolatile memory and low-power computing in the post-Moore era. An important challenge is to realize long distance spin transport, together with efficient manipulation of spin current for novel logic-processing applications. Here, we describe a gate-variable spin current demultiplexer (GSDM) based on graphene, serving as a fundamental building block of reconfigurable spin current logic circuits. The concept relies on electrical gating of carrier density dependent conductivity and spin diffusion length in graphene. As a demo, GSDM is realized for both single-layer and bilayer graphene. The distribution and propagation of spin current in the two branches of GSDM depend on spin relaxation characteristics of graphene. Compared with Elliot-Yafet spin relaxation mechanism, D'yakonov-Perel mechanism results in more appreciable gate-tuning performance. These unique features of GSDM would give rise to abundant spin logic applications, such as on-chip spin current modulators and reconfigurable spin logic circuits.

cond-mat.mes-hall↗

arXiv2016

Voltage Controlled Magnetic Skyrmion Motion for Racetrack Memory

Magnetic skyrmion, vortex-like swirling topologically stable spin configurations, is appealing as information carrier for future nanoelectronics, owing to the stability, small size and extremely low driving current density. One of the most promising applications of skyrmion is to build racetrack memory (RM). Compared to domain wall-based RM (DW-RM), skyrmion-based RM (Sky-RM) possesses quite a few benefits in terms of energy, density and speed etc. Until now, the fundamental behaviors, including nucleation/annihilation, motion and detection of skyrmion have been intensively investigated. However, one indispensable function, i.e., pinning/depinning of skyrmion still remains an open question and has to be addressed before applying skyrmion for RM. Furthermore, Current research mainly focuses on physical investigations, whereas the electrical design and evaluation are still lacking. In this work, we aim to promote the development of Sky-RM from fundamental physics to realistic electronics. First, we investigate the pinning/depinning characteristics of skyrmion in a nanotrack with the voltage-controlled magnetic anisotropy (VCMA) effect. Then, we propose a compact model and design framework of Sky-RM for electrical evaluation. This work completes the elementary memory functionality of Sky-RM and fills the technical gap between the physicists and electronic engineers, making a significant step forward for the development of Sky-RM.

cond-mat.mes-hall↗

arXiv2015

Current-limiting challenges for all-spin logic devices

All-spin logic device (ASLD) has attracted increasing interests as one of the most promising post-CMOS device candidates, thanks to its low power, non-volatility and logic-in-memory structure. Here we investigate the key current-limiting factors and develop a physics-based model of ASLD through nano-magnet switching, the spin transport properties and the breakdown characteristic of channel. First, ASLD with perpendicular magnetic anisotropy (PMA) nano-magnet is proposed to reduce the critical current (Ic0). Most important, the spin transport efficiency can be enhanced by analyzing the device structure, dimension, contact resistance as well as material parameters. Furthermore, breakdown current density (JBR) of spin channel is studied for the upper current limitation. As a result, we can deduce current-limiting conditions and estimate energy dissipation. Based on the model, we demonstrate ASLD with different structures and channel materials (graphene and copper). Asymmetric structure is found to be the optimal option for current limitations. Copper channel outperforms graphene in term of energy but seriously suffers from breakdown current limit. By exploring the current limit and performance tradeoffs, the optimization of ASLD is also discussed. This benchmarking model of ASLD opens up new prospects for design and implementation of future spintronics applications.

cond-mat.mtrl-sci↗

arXiv2012

Laxity-Based Opportunistic Scheduling with Flow-Level Dynamics and Deadlines

Many data applications in the next generation cellular networks, such as content precaching and video progressive downloading, require flow-level quality of service (QoS) guarantees. One such requirement is deadline, where the transmission task needs to be completed before the application-specific time. To minimize the number of uncompleted transmission tasks, we study laxity-based scheduling policies in this paper. We propose a Less-Laxity-Higher-Possible-Rate (L$^2$HPR) policy and prove its asymptotic optimality in underloaded identical-deadline systems. The asymptotic optimality of L$^2$HPR can be applied to estimate the schedulability of a system and provide insights on the design of scheduling policies for general systems. Based on it, we propose a framework and three heuristic policies for practical systems. Simulation results demonstrate the asymptotic optimality of L$^2$HPR and performance improvement of proposed policies over greedy policies.

cs.IT↗

arXiv2012

Fast Adaptive S-ALOHA Scheme for Event-driven M2M Communications (Journal version)

Supporting massive device transmission is challenging in Machine-to-Machine (M2M) communications. Particularly, in event-driven M2M communications, a large number of devices activate within a short period of time, which in turn causes high radio congestions and severe access delay. To address this issue, we propose a Fast Adaptive S-ALOHA (FASA) scheme for random access control of M2M communication systems with bursty traffic. Instead of the observation in a single slot, the statistics of consecutive idle and collision slots are used in FASA to accelerate the tracking process of network status which is critical for optimizing S-ALOHA systems. Using drift analysis, we design the FASA scheme such that the estimate of the backlogged devices converges fast to the true value. Furthermore, by examining the $T$-slot drifts, we prove that the proposed FASA scheme is stable as long as the average arrival rate is smaller than $e^{-1}$, in the sense that the Markov Chain derived from the scheme is geometrically ergodic. Simulation results demonstrate that the proposed FASA scheme outperforms traditional additive schemes such as PB-ALOHA and achieves near-optimal performance in reducing access delay. Moreover, compared to multiplicative schemes, FASA shows its robustness under heavy traffic load in addition to better delay performance.

cs.IT↗

arXiv2012

Fast Adaptive S-ALOHA Scheme for Event-driven Machine-to-Machine Communications

Machine-to-Machine (M2M) communication is now playing a market-changing role in a wide range of business world. However, in event-driven M2M communications, a large number of devices activate within a short period of time, which in turn causes high radio congestions and severe access delay. To address this issue, we propose a Fast Adaptive S-ALOHA (FASA) scheme for M2M communication systems with bursty traffic. The statistics of consecutive idle and collision slots, rather than the observation in a single slot, are used in FASA to accelerate the tracking process of network status. Furthermore, the fast convergence property of FASA is guaranteed by using drift analysis. Simulation results demonstrate that the proposed FASA scheme achieves near-optimal performance in reducing access delay, which outperforms that of traditional additive schemes such as PB-ALOHA. Moreover, compared to multiplicative schemes, FASA shows its robustness even under heavy traffic load in addition to better delay performance.

cs.IT↗