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Yu Ye

Publications and source records attributed to Yu Ye.

At least 55 records · Page 3Linked to original sources
arXiv2023

Controlling the 2D magnetism of CrBr$_3$ by van der Waals stacking engineering

The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. Van der Waals stacking engineering makes promises for controllable magnetism via interlayer magnetic coupling. However, directly examining the stacking order changes accompanying magnetic order transitions at the atomic scale and preparing device-ready 2D magnets with controllable magnetic orders remain elusive. Here, we demonstrate effective control of interlayer stacking in exfoliated CrBr$_3$ via thermally assisted strain engineering. The stable interlayer ferromagnetic (FM), antiferromagnetic (AFM), and FM-AFM coexistent ground states confirmed by the magnetic circular dichroism measurements are realized. Combined with the first-principles calculations, the atomically-resolved imaging technique reveals the correlation between magnetic order and interlay stacking order in the CrBr$_3$ flakes unambiguously. A tunable exchange bias effect is obtained in the mixed phase of FM and AFM states. This work will introduce new magnetic properties by controlling the stacking order, and sequence of 2D magnets, providing ample opportunities for their application in spintronic devices.

cond-mat.mtrl-sci↗
arXiv2023

Synergistic correlated states and nontrivial topology in coupled graphene-insulator heterostructures

In this work, we study the synergistic correlated states in two distinct types of interacting electronic systems coupled by interlayer Coulomb interactions. We propose that this scenario can be realized in a type of Coulomb-coupled graphene-insulator heterostructures with gate tunable band alignment. We find that, by virtue of the interlayer Coulomb coupling between the interacting electrons in the two layers, electronic states that cannot be revealed in either individual layer would emerge in a cooperative and synergistic manner. Specifically, as a result of the band alignment, charge carriers can be transferred between graphene and the substrate under the control of gate voltages, which can yield a long-wavelength electronic crystal at the surface of the substrate. This electronic crystal exerts a superlattice Coulomb potential on the Dirac electrons in graphene, which generates subbands with reduced non-interacting Fermi velocity. As a result, $e$-$e$ Coulomb interactions within graphene would play a more important role, giving rise to a gapped Dirac state at the charge neutrality point, accompanied by interaction-enhanced Fermi velocity. Moreover, the superlattice potential can give rise to topologically nontrivial subband structures which are tunable by superlattice's constant and anisotropy. Reciprocally, the electronic crystal formed in the substrate can be substantially stabilized in such coupled bilayer heterostructure by virtue of the cooperative interlayer Coulomb coupling. We further perform high-throughput first principles calculations to identify a number of promising insulating materials as candidate substrates for graphene to demonstrate these effects.

cond-mat.mes-hall↗
arXiv2023

Probing the Anomalous Hall Transport and Magnetic Reversal of Chiral-Lattice Antiferromagnet Co$_{1/3}$NbS$_2$

Antiferromagnets exhibiting giant anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) have recently aroused broad interest, not only for their potential applications in future electronic devices, but also because of the rich physics arising from the Berry curvature near the Fermi level. $\rm{Co_{1/3}NbS_2}$, by intercalating $\rm{Co^{2+}}$ ions between $\rm{NbS_2}$ layers, is a quasi-two-dimensional layered antiferromagnet with a chiral lattice. A large AHE has been observed in $\rm{Co_{1/3}NbS_2}$, but its origin is under debate. In this letter, we report the large AHE and ANE in exfoliated $\rm{Co_{1/3}NbS_2}$ flakes. By analyzing the thermoelectric data via the Mott relation, we determined that the observed large AHE and ANE primarily result from the intrinsic Berry curvature. We also observed the magnetic domains in $\rm{Co_{1/3}NbS_2}$ by reflective magnetic circular dichroism measurements. Combined with electrical transport measurements, we confirmed that the magnetic reversal in $\rm{Co_{1/3}NbS_2}$ is determined by domain wall motion, and the critical field ($H_c$) exhibits a memory effect of consecutive magnetic sweeps. Our work provides insight into the topological properties of $\rm{Co_{1/3}NbS_2}$ and paves the way to studying the spin configuration and magnetic domain dynamics in this fascinating antiferromagnet.

cond-mat.mes-hall↗
arXiv2023

Magnetically-dressed CrSBr exciton-polaritons in ultrastrong coupling regime

The strong coupling between photons and matter excitations such as excitons, phonons, and magnons is of central importance in the study of light-matter interactions. Bridging the flying and stationary quantum states, the strong light-matter coupling enables the coherent transmission, storage, and processing of quantum information, which is essential for building photonic quantum networks. Over the past few decades, exciton-polaritons have attracted substantial research interest due to their half-light-half-matter bosonic nature. Coupling exciton-polaritons with magnetic orders grants access to rich many-body phenomena, but has been limited by the availability of material systems that exhibit simultaneous exciton resonances and magnetic ordering. Here we report magnetically-dressed microcavity exciton-polaritons in the van der Waals antiferromagnetic (AFM) semiconductor CrSBr coupled to a Tamm plasmon microcavity. Angle-resolved spectroscopy reveals an exceptionally high exciton-polariton coupling strength attaining 169 meV, demonstrating ultrastrong coupling that persists up to room temperature. Temperature-dependent exciton-polariton spectroscopy senses the magnetic order change from AFM to paramagnetism in CrSBr, confirming its magnetic nature. By applying an out-of-plane magnetic field, an effective tuning of the polariton energy is further achieved while maintaining the ultrastrong exciton-photon coupling strength, which is attributed to the spin canting process that modulates the interlayer exciton interaction. Our work proposes a hybrid quantum platform enabled by robust opto-electronic-magnetic coupling, promising for quantum interconnects and transducers.

cond-mat.mtrl-sci↗
arXiv2022

Quantum Hall phase in graphene engineered by interfacial charge coupling

Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted to exhibit exotic topological states. Yet the understanding of the underlying physics and the controllable engineering of this paradigm of interaction remain challenging. Here we demonstrate the observation of an unusual QHE, which differs markedly from the known picture, in graphene samples in contact with an anti-ferromagnetic insulator CrOCl equipped with dual gates. Owing to the peculiar interfacial coupling, Landau levels in monolayer graphene remain intact at negative filling fractions, but largely deviated for the positive gate-doping range. The latter QHE phase even presents in the limit of zero magnetic field, with the consequential Landau quantization following a parabolic relation between the displacement field $D$ and the magnetic field $B$. This characteristic prevails up to 100 K in a sufficiently wide effective doping range from 0 to 10$^{13}$ cm$^{-2}$. Our findings thus open up new routes for manipulating the quantum electronic states, which may find applications in such as quantum metrology.

cond-mat.mes-hall↗
arXiv2022

Orbital polarization and third-order anomalous Hall effect in WTe2

The anomalous Hall effect (AHE) has been extended into the nonlinear regime, where the Hall voltage shows higher-order response to the applied current. Nevertheless, the microscopic mechanism of the nonlinear AHE remains unclear. Here we report the orbital polarization and its induced third-order AHE in few-layer WTe2 flakes. Through angle-dependent electric measurements, it is found that the third-order AHE is quite consistent with the electric field induced polarization of orbital magnetic moment caused by the Berry connection polarizability tensor, which is further directly detected by polar reflective magnetic circular dichroism spectroscopy. The microscopic mechanisms of third-order AHE are analyzed through the scaling law, that is, the opposite orbital magnetic moments (up or down) deflect to opposite directions driven by electric field induced Berry curvature, forming the intrinsic contribution; driven by the Magnus effect of the self-rotating Bloch electrons, the opposite orbital magnetic moments are scattered towards opposite transverse directions, resulting in the skew scattering.

cond-mat.mes-hall↗
arXiv2022

Multi-state data storage in a two-dimensional stripy antiferromagnet implemented by magnetoelectric effect

A promising approach to the next generation of low-power, functional, and energy-efficient electronics relies on novel materials with coupled magnetic and electric degrees of freedom. In particular, stripy antiferromagnets often exhibit broken crystal and magnetic symmetries, which may bring about the magnetoelectric (ME) effect and enable the manipulation of intriguing properties and functionalities by electrical means. The demand for expanding the boundaries of data storage and processing technologies has led to the development of spintronics toward two-dimensional (2D) platforms. This work reports the ME effect in the 2D stripy antiferromagnetic insulator CrOCl down to a single layer. By measuring the tunneling resistance of CrOCl on the parameter space of temperature, magnetic field, and applied voltage, we verified the ME coupling down to the 2D limit and unraveled its mechanism. Utilizing the multi-stable states and ME coupling at magnetic phase transitions, we realize multi-state data storage in the tunneling devices. Our work not only advances the fundamental understanding of spin-charge coupling but also demonstrates the great potential of 2D antiferromagnetic materials to deliver devices and circuits beyond the traditional binary operations.

cond-mat.mtrl-sci↗
arXiv2022

Doping-induced structural transformation in the spin-1/2 triangular-lattice antiferromagnet Na$_{2}$Ba$_{1-x}$Sr$_{x}$Co(PO$_{4}$)$_{2}$

The effects of Sr doping on the structural properties of Na$_{2}$BaCo(PO$_{4}$)$_{2}$, a spin-1/2 triangular-lattice antiferromagnet as a quantum spin liquid candidate, are investigated by complementary x-ray and neutron powder diffraction measurements. It is found that in Na$_{2}$Ba$_{1-x}$Sr$_{x}$Co(PO$_{4}$)$_{2}$ (NBSCPO), the trigonal phase (space group $\mathit{P}$$\bar{3}$$\mathit{m}$1) with a perfect triangular lattice of Co$^{2+}$ ions is structurally stable when the doping level of Sr is below 30% ($\mathit{x}$ $\le$ 0.3), while a pure monoclinic phase (space group $\mathit{P}$2$_{1}$/$\mathit{a}$) with slight rotations of CoO$_{6}$ octahedra and displacements of Ba$^{2+}$/Sr$^{2+}$ ions will be established when the Sr doping level is above 60% ($\mathit{x}$ $\ge$ 0.6). Such a doping-induced structural transformation in NBSCPO is supported by first-principles calculations and Raman spectroscopy. Na$_{2}$SrCo(PO$_{4}$)$_{2}$, a novel spin-1/2 triangular-lattice antiferromagnet with glaserite-type structure, although monoclinically distorted, exhibits no long-range magnetic order down to 2 K and a similar negative Curie-Weiss temperature as Na$_{2}$BaCo(PO$_{4}$)$_{2}$ with a perfect triangular lattice, suggesting the robustness of magnetic exchange interaction against the Ba/Sr substitutions.

cond-mat.str-el↗
arXiv2022

Ferromagnetic-antiferromagnetic coexisting ground states and exchange bias effects in $\bf{MnBi_4Te_7}$ and $\bf{MnBi_6Te_{10}}$

Natural superlattice structures $\rm{(MnBi_2Te_4)(Bi_2Te_3)}$$_n$ ($n$ = 1, 2,...), in which magnetic $\rm{MnBi_2Te_4}$ layers are separated by nonmagnetic $\rm{Bi_2Te_3}$ layers, hold band topology, magnetism and reduced interlayer coupling, providing a promising platform for the realization of exotic topological quantum states. However, their magnetism in the two-dimensional limit, which is crucial for further exploration of quantum phenomena, remains elusive. Here, complex ferromagnetic (FM)-antiferromagnetic (AFM) coexisting ground states that persist up to the 2-septuple layers (SLs) limit are observed and comprehensively investigated in $\rm{MnBi_4Te_7}$ ($n$ = 1) and $\rm{MnBi_6Te_{10}}$ ($n$ = 2). The ubiquitous Mn-Bi site mixing modifies or even changes the sign of the subtle inter-SL magnetic interactions, yielding a spatially inhomogeneous interlayer coupling. Further, a tunable exchange bias effect is observed in $\rm{(MnBi_2Te_4)(Bi_2Te_3)}$$_n$ ($n$ = 1, 2), arising from the coupling between the FM and AFM components in the ground state. Our work highlights a new approach toward the fine-tuning of magnetism and paves the way for further study of quantum phenomena in $\rm{(MnBi_2Te_4)(Bi_2Te_3)}$$_n$ ($n$ = 1, 2,...) as well as their magnetic applications.

cond-mat.mtrl-sci↗
arXiv2022

Ultra-efficient magnetism modulation in a Weyl ferromagnet by current-assisted domain wall motion

Flexible and efficient manipulation of magnetic configurations can be challenging. In the design of practical devices, achieving a high effective magnetic field with a low working current is under tight demand. Here, we report a unique method for efficient magnetism modulation by direct current injection in magnetic Weyl semimetal Co3Sn2S2. We demonstrate that the modulation process stems from current-assisted domain wall motion. Through two independent methods, we reveal that the spin-transfer torque efficiency of Co3Sn2S2 reaches as high as 2.4-5.6 kOe MA^(-1) cm^2, and the threshold current density for driving the magnetic domain walls is as low as <5.1*10^5 A/cm^2 without an external field, and <1.5*10^5 A/cm^2 with a moderate external field. Our findings manifest a new and powerful approach for sub-micron magnetism manipulation, and also open the door towards a new paradigm of spintronics that combines magnetism, topology, and metallicity for low-energy consumption memory and computing.

cond-mat.mtrl-sci↗
arXiv2022

Electrically pumped polarized exciton-polaritons in a halide perovskite microcavity

Exciton polaritons, hybrid quasiparticles with part-light part-matter nature in semiconductor microcavities, are extensively investigated for striking phenomena such as polariton condensation and quantum emulation. These phenomena have recently been discovered in emerging lead halide perovskites at elevated temperatures up to room temperature. For advancing these discoveries into practical applications, one critical requirement is the realization of electrically pumped exciton-polaritons. However, electrically pumped polariton light-emitting devices with perovskites have not yet been achieved experimentally. Here, we devise a new method to combine the device with the microcavity and report the first halide perovskite polariton light-emitting device. Specifically, the device is based on a CsPbBr3 capacitive structure, which can inject the electrons and holes from the same electrode, conducive to the formation of excitons and simultaneously maintaining the high quality of the microcavity. In addition, highly polarization-selective polariton emissions have been demonstrated due to the optical birefringence in the CsPbBr3 microplate. This work paves the way for realizing practical polaritonic devices such as high-speed light-emitting devices for information communications and inversionless electrically pumped lasers based on perovskites.

cond-mat.mtrl-sci↗
arXiv2022

Asynchronous Parallel Incremental Block-Coordinate Descent for Decentralized Machine Learning

Machine learning (ML) is a key technique for big-data-driven modelling and analysis of massive Internet of Things (IoT) based intelligent and ubiquitous computing. For fast-increasing applications and data amounts, distributed learning is a promising emerging paradigm since it is often impractical or inefficient to share/aggregate data to a centralized location from distinct ones. This paper studies the problem of training an ML model over decentralized systems, where data are distributed over many user devices and the learning algorithm run on-device, with the aim of relaxing the burden at a central entity/server. Although gossip-based approaches have been used for this purpose in different use cases, they suffer from high communication costs, especially when the number of devices is large. To mitigate this, incremental-based methods are proposed. We first introduce incremental block-coordinate descent (I-BCD) for the decentralized ML, which can reduce communication costs at the expense of running time. To accelerate the convergence speed, an asynchronous parallel incremental BCD (API-BCD) method is proposed, where multiple devices/agents are active in an asynchronous fashion. We derive convergence properties for the proposed methods. Simulation results also show that our API-BCD method outperforms state of the art in terms of running time and communication costs.

cs.LG↗
arXiv2021

On the Harish-Chandra Homomorphism for Quantum Superalgebras

In this paper, we introduce the Harish-Chandra homomorphism for the quantum superalgebra $\mathrm{U}_q(\mathfrak{g})$ associated with a simple basic Lie superalgebra $\mathfrak{g}$ and give an explicit description of its image. We use it to prove that the center of $\mathrm{U}_q(\mathfrak{g})$ is isomorphic to a subring of the ring $J(\mathfrak{g})$ of exponential super-invariants in the sense of Sergeev and Veselov, establishing a Harish-Chandra type theorem for $\mathrm{U}_q(\mathfrak{g})$. As a byproduct, we obtain a basis of the center of $\mathrm{U}_q(\mathfrak{g})$ with the aid of quasi-R-matrix.

math.RT↗
arXiv2021

ActFloor-GAN: Activity-Guided Adversarial Networks for Human-Centric Floorplan Design

We present a novel two-stage approach for automated floorplan design in residential buildings with a given exterior wall boundary. Our approach has the unique advantage of being human-centric, that is, the generated floorplans can be geometrically plausible, as well as topologically reasonable to enhance resident interaction with the environment. From the input boundary, we first synthesize a human-activity map that reflects both the spatial configuration and human-environment interaction in an architectural space. We propose to produce the human-activity map either automatically by a pre-trained generative adversarial network (GAN) model, or semi-automatically by synthesizing it with user manipulation of the furniture. Second, we feed the human-activity map into our deep framework ActFloor-GAN to guide a pixel-wise prediction of room types. We adopt a re-formulated cycle-consistency constraint in ActFloor-GAN to maximize the overall prediction performance, so that we can produce high-quality room layouts that are readily convertible to vectorized floorplans. Experimental results show several benefits of our approach. First, a quantitative comparison with prior methods shows superior performance of leveraging the human-activity map in predicting piecewise room types. Second, a subjective evaluation by architects shows that our results have compelling quality as professionally-designed floorplans and much better than those generated by existing methods in terms of the room layout topology. Last, our approach allows manipulating the furniture placement, considers the human activities in the environment, and enables the incorporation of user-design preferences.

cs.GR↗
arXiv2021

Centers of Multilinear Forms and Applications

In this paper we study the center algebras of multilinear forms. It is shown that the center of a nondegenerate multilinear form is a finite dimensional commutative algebra and can be effectively applied to its direct sum decompositions. As an application of the algebraic structure of centers, we also show that almost all multilinear forms are absolutely indecomposable. The theory of centers can be extended to multilinear maps and be applied to their symmetric equivalence. Moreover, with a help of the results of symmetric equivalence, we are able to provide a linear algebraic proof of a well known Torelli type result which says that two complex homogeneous polynomials with the same Jacobian ideal are linearly equivalent.

math.RA↗
arXiv2021

On Centers and Direct Sum Decompositions of Higher Degree Forms

Higher degree forms are homogeneous polynomials of degree $d > 2,$ or equivalently symmetric $d$-linear spaces. This paper is mainly concerned about the algebraic structure of the centers of higher degree forms with applications specifically to direct sum decompositions, namely expressing higher degree forms as sums of forms in disjoint sets of variables. We show that the center algebra of almost every form is the ground field, consequently almost all higher degree forms are absolutely indecomposable. If a higher degree form is decomposable, then we provide simple criteria and algorithms for direct sum decompositions by its center algebra. It is shown that the direct sum decomposition problem can be boiled down to some standard tasks of linear algebra, in particular the computations of eigenvalues and eigenvectors. We also apply the structure results of center algebras to provide a complete answer to the classical problem of whether a higher degree form can be reconstructed from its Jacobian ideal.

math.RA↗
arXiv2021

Realization of graphene logics in an exciton-enhanced insulating phase

For two decades, two-dimensional carbon species, including graphene, have been the core of research in pursuing next-generation logic applications beyond the silicon technology. Yet the opening of a gap in a controllable range of doping, whilst keeping high conductance outside of this gapped state, has remained a grand challenge in them thus far. Here we show that, by bringing Bernal-stacked bilayer graphene in contact with an anti-ferromagnetic insulator CrOCl, a strong insulating behavior is observed in a wide range of positive total electron doping $n_\mathrm{tot}$ and effective displacement field $D_\mathrm{eff}$ at low temperatures. Transport measurements further prove that such an insulating phase can be well described by the picture of an inter-layer excitonic state in bilayer graphene owing to electron-hole interactions. The consequential over 1 $\mathrm{GΩ}$ excitonic insulator can be readily killed by tuning $D_\mathrm{eff}$ and/or $n_\mathrm{tot}$, and the system recovers to a high mobility graphene with a sheet resistance of less than 100 $\mathrmΩ$. It thus yields transistors with "ON-OFF" ratios reaching 10$^{7}$, and a CMOS-like graphene logic inverter is demonstrated. Our findings of the robust insulating phase in bilayer graphene may be a leap forward to fertilize the future carbon computing.

cond-mat.mes-hall↗