arXiv subjects

Yu-Jun Zhao

Publications and source records attributed to Yu-Jun Zhao.

At least 37 records · Page 2Linked to original sources

arXiv2024

Room temperature magnetic phase transition in an electrically-tuned van der Waals ferromagnet

Finding tunable van der Waals (vdW) ferromagnets that operate at above room temperature is an important research focus in physics and materials science. Most vdW magnets are only intrinsically magnetic far below room temperature and magnetism with square-shaped hysteresis at room-temperature has yet to be observed. Here, we report magnetism in a quasi-2D magnet Cr1.2Te2 observed at room temperature (290 K). This magnetism was tuned via a protonic gate with an electron doping concentration up to 3.8 * 10^21 cm^-3. We observed non-monotonic evolutions in both coercivity and anomalous Hall resistivity. Under increased electron doping, the coercivities and anomalous Hall effects (AHEs) vanished, indicating a doping-induced magnetic phase transition. This occurred up to room temperature. DFT calculations showed the formation of an antiferromagnetic (AFM) phase caused by the intercalation of protons which induced significant electron doping in the Cr1.2Te2. The tunability of the magnetic properties and phase in room temperature magnetic vdW Cr1.2Te2 is a significant step towards practical spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Strain-induced interlayer magnetic coupling spike of two-dimensional van der Waals material Fe$_5$GeTe$_2$

A stronger interlayer magnetic coupling (ILMC) can open up new opportunities in spintronics devices for Fe$_5$GeTe$_2$ (F5GT), a demonstrated two-dimensional (2D) van der Waals (vdW) material with high Currie temperature. Here we observe an extraordinary ILMC spike in F5GT, jumping from 1.15 to 12.79 meV/f.u, by applying a 3% in-plane strain. This spike is mainly ascribed to a significant increase in the magnetic moment of the Fe5 ion. Moreover, the applied in-plane strain can also significantly enhance the magnetic anisotropy energy (MAE) of the system, triggering the transition between the in/off-plane configurations in multi-layer F5GT.

cond-mat.mtrl-sci↗

arXiv2022

Residual Entropy of a Two-dimensional Ising Model with Crossing and Four-spin Interactions

We study the residual entropy of a two-dimensional Ising model with crossing and four-spin interactions, both for the case that in zero magnetic field and that in an imaginary magnetic field i(π/2)kT. The spin configurations of this Ising model can be mapped into the hydrogen configurations of square ice with the defined standard direction of the hydrogen bonds. Making use of the equivalence of this Ising system with the exactly solved eight-vertex model and taking the low temperature limit, we obtain the residual entropy. Two soluble cases in zero field and one soluble case in imaginary field are examined. In the case that the free-fermion condition holds in zero field, we find the ground states in low temperature limit include the configurations disobeying the ice rules. In another case in zero field that the four-spin interactions are -{\infty}, and the case in imaginary field that the four-spin interactions are 0, the residual entropy exactly agrees with the result of square ice determined by Lieb in 1967. In the solutions of the latter two cases, we have shown alternative approaches to the residual entropy problem of square ice.

cond-mat.stat-mech↗

arXiv2022

Five-fold Symmetry in Au-Si Metallic Glass

The first metallic glass of Au-Si alloy has been discovered for over half a century, but its atomic structure is still puzzling. Herein, Au 8 Si dodecahedrons with local five-fold symmetry are revealed as building blocks in Au-Si metallic glass, and the interconnection modes of Au 8 Si dodecahedrons determine the medium-range order. With dimensionality reduction, the surface ordering is attributed to the motif transformation of Au 8 Si dodecahedrons into planar Au 5 Si pyramids with five-fold symmetry, and thus the self-assembly of Au 5 Si pyramids leads to the formation of the ordered Au 2 Si monolayer with the lowest energy. Furthermore, the structural similarity analysis is performed to unveil the physical origin of structural characteristics in different dimensions. The amorphism of Au-Si is due to the smooth energy landscape around the global minimum, while the ordered surface structure occurs due to the steep energy landscape.

cond-mat.mtrl-sci↗

arXiv2022

Gate-tunable exchange bias effect in FePS3-Fe5GeTe2 van der Waals heterostructures

Electrical gate-manipulated exchange bias (EB) effect is a long-term goal for spintronics applications. Meanwhile, the emergence of van der Waals (vdW) magnetic heterostructures provides ideal platforms for the study of interlayer magnetic coupling. However, to date, the electrical gate-controlled EB effect has yet to be realized in vdW heterostructures. Here, for the first time, we realized electrically-controllable EB effects in a vdW antiferromagnetic (AFM)-ferromagnetic (FM) heterostructure, FePS3-Fe5GeTe2. For pristine FePS3-Fe5GeTe2 heterostructures, sizable EB effects can be generated due to the strong interface coupling, which also depend on the thickness of the ferromagnetic layers. By applying a solid protonic gate, the EB effects can be electrically tuned largely by proton intercalations and deintercalations. The EB field reaches up to 23% of the coercive field and the blocking temperature exceeds 50 K at Vg= -3.15 V. The proton intercalations not only tune the average magnetic exchange coupling, but also change the AFM configurations and transform the heterointerface between an uncompensated AFM-FM interface and a compensated AFM-FM interface. These alterations result in a dramatic modulation of the total interface exchange coupling and the resultant EB effects. The study is a significant step towards vdW heterostructure-based magnetic logic for future low-energy electronics.

cond-mat.mtrl-sci↗

arXiv2022

Determining ground states of alloy by a symmetry-based classification

Reducing the number of candidate structures is crucial to improve the efficiency of global optimization. Herein, we demonstrate that the generalized Hamiltonian can be described by the atom classification model (ACM) based on symmetry, generating competent candidates for the first-principles calculations to determine ground states of alloy directly. The candidates can be obtained in advance through solving the convex hull step by step, because the correlation functions of ACM can be divided into various subspace according to the defined index $l$. As an important inference, this index can be converted to the number of Wyckoff positions, revealing the dominant effect of geometry symmetry on structural stability. Taking Ni-Pt, Ag-Pd, Os-Ru, Ir-Ru and Mo-Ru as examples, we not only identify the stable structures in previous theoretical and experimental results, but also predict a dozen of configurations with lower formation energies, such as Ag$_{0.5}$Pd$_{0.5}$ ($Fd$-$3m$), Os$_{0.5}$Ru$_{0.5}$ ($Pnma$), Ir$_{1/3}$Ru$_{2/3}$ ($P6_{3}/mmc$), and Mo$_{0.25}$Ru$_{0.75}$ ($Cmcm$).

cond-mat.mtrl-sci↗

arXiv2021

Three-dimensional Dirac Phonons with Inversion Symmetry

Dirac semimetals associated with bulk Dirac fermions are well-known in topological electronic systems. In sharp contrast, three-dimensional (3D) Dirac phonons in crystalline solids are still unavailable. Here we perform symmetry arguments and first-principles calculations to systematically investigate 3D Dirac phonons in all space groups with inversion symmetry. The results show that there are two categories of 3D Dirac phonons depending on their protection mechanisms and positions in momentum space. The first category originates from the four-dimensional irreducible representations at the high symmetry points. The second category arises from the phonon branch inversion, and the symmetry guarantees Dirac points to be located along the high symmetry lines. Furthermore, we reveal that non-symmorphic symmetries and the combination of inversion and time-reversal symmetries play essential roles in the emergence of 3D Dirac phonons. Our work not only offers a comprehensive understanding of 3D Dirac phonons but also provides significant guidance for exploring Dirac bosons in both phononic and photonic systems.

cond-mat.mtrl-sci↗

arXiv2020

Gate-controlled magnetic phase transition in a van der Waals magnet Fe$_5$GeTe$_2$

Magnetic van der Waals (vdW) materials, including ferromagnets (FM) and antiferromagnets (AFM), have given access to the investigation of magnetism in two-dimensional (2D) limit and attracted broad interests recently. However, most of them are semiconducting or insulating and the vdW itinerant magnets, especially vdW itinerant AFM, are very rare. Here, we studied the anomalous Hall effect of a vdW itinerant magnet Fe$_5$GeTe$_2$ (F5GT) with various thicknesses down to 6.8 nm (two unit cells). Despite the robust ferromagnetic ground state in thin-layer F5GT, however, we show that the electron doping implemented by a protonic gate can eventually induce a magnetic phase transition from FM to AFM. Realization of an antiferromagnetic phase in F5GT highlights its promising applications in high-temperature antiferromagnetic vdW devices and heterostructures.

cond-mat.mtrl-sci↗

arXiv2020

Gate-Tuned Interlayer Coupling in van der Waals Ferromagnet Fe$_3$GeTe$_2$ Nanoflakes

The weak interlayer coupling in van der Waals (vdW) magnets has confined their application to two dimensional (2D) spintronic devices. Here, we demonstrate that the interlayer coupling in a vdW magnet Fe$_3$GeTe$_2$ (FGT) can be largely modulated by a protonic gate.With the increase of the protons intercalated among vdW layers,interlayer magnetic coupling increases.Because of the existence of antiferromagnetic layers in FGT nanoflakes, the increasing interlayer magnetic coupling induces exchange bias in protonated FGT nanoflakes. Most strikingly, a rarely seen zero-field cooled (ZFC) exchange bias with very large values (maximally up to 1.2 kOe) has been observed when higher positive voltages (Vg>4.36 V) are applied to the protonic gate, which clearly demonstrates that a strong interlayer coupling is realized by proton intercalation. Such strong interlayer coupling will enable a wider range of applications for vdW magnets.

cond-mat.mtrl-sci↗

arXiv2019

Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures

Van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next generation spintronic devices. When layered with non-magnetic vdW materials, such as graphene and/or topological insulators, vdW heterostructures can be assembled (with no requirement for lattice matching) to provide otherwise unattainable device structures and functionalities. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in van der Waals heterostructured Fe3GeTe2/graphite/Fe3GeTe2 devices. Unlike conventional giant magnetoresistance (GMR) which is characterized by two resistance states, the MR in these vdW heterostructures features distinct high, intermediate and low resistance states. This unique characteristic is suggestive of underlying physical mechanisms that differ from those observed before. After theoretical calculations, the three resistance behavior was attributed to a spin momentum locking induced spin polarized current at the graphite/FGT interface. Our work reveals that ferromagnetic heterostructures assembled from vdW materials can exhibit substantially different properties to those exhibited by similar heterostructures grown in vacuum. Hence, it highlights the potential for new physics and new spintronic applications to be discovered using vdW heterostructures.

cond-mat.mes-hall↗

arXiv2018

Insights into the Unusual Semiconducting Behavior in Low-Dimensional Boron

Elementary semiconductors are rare and attractive, especially for low-dimensional materials. Unfortunately, most of boron nanostructures were found to be metallic, despite of their typical semiconducting bulk structure. Herein, we propose a general recipe to realize low-dimensional semiconducting boron. This unusual semiconducting behavior is attributed to charge transfer and electron localization, induced by the symmetry breaking that divides boron atoms into cations and anions. In addition, it is feasible to accomplish band gap engineering by rationally designing various structures. Importantly, the low-dimensional semiconducting boron are predicted to be an excellent solar-cell material with the power conversion efficiency of higher than 20%, paving the way for their promising optoelectronic applications.

cond-mat.mes-hall↗

arXiv2017

Two-Dimensional Semiconducting Boron Monolayers

The two-dimensional boron monolayers were reported to be metallic both in previous theoretical predictions and experimental observations, however, we have firstly found a family of boron monolayers with the novel semiconducting property as confirmed by the first-principles calculations with the quasi-particle G0W0 approach. We demonstrate that the vanished metallicity characterized by the pz-derived bands cross the Fermi level is attributed to the motif of a triple-hexagonal-vacancy, with which various semiconducting boron monolayers are designed to realize the band-gap engineering for the potential applications in electronic devices. The semiconducting boron monolayers in our predictions are expected to be synthesized on the proper substrates, due to the similar stabilities to the ones observed experimentally.

cond-mat.mtrl-sci↗

arXiv2017

Geometrical Eigen-subspace Framework Based Molecular Conformation Representation for Efficient Structure Recognition and Comparison

We have developed an extended distance matrix approach to study the molecular geometric configuration through spectral decomposition. It is shown that the positions of all atoms in the eigen-space can be specified precisely by their eigen-coordinates, while the refined atomic eigen-subspace projection array adopted in our approach is demonstrated to be a competent invariant in structure comparison. Furthermore, a visual eigen-subspace projection function (EPF) is derived to characterize the surrounding configuration of an atom naturally. A complete set of atomic EPFs constitute an intrinsic representation of molecular conformation, based on which the interatomic EPF distance and intermolecular EPF distance in the eigen-space can be reasonably defined. Exemplified with a few cases, the intermolecular EPF distance shows exceptional rationality and efficiency in structure recognition and comparison.

cond-mat.mtrl-sci↗

arXiv2016

Minimum Vertex-type Sequence Indexingfor Clusters on Square Lattice

An effective indexing scheme for clusters that enables fast structure comparison and congruence check is desperately desirable in the field of mathematics, artificial intelligence, materials science, etc. Here we introduce the concept of minimum vertex-type sequence for the indexing of clusters on square lattice, which contains a series of integers each labeling the vertex type of an atom. The minimum vertex-type sequence is orientation independent, and it builds a one-to-one correspondence with the cluster. By using minimum vertex-type sequence for structural comparison and congruence check, only one type of data is involved, and the largest amount of data to be compared is n pairs, n is the cluster size. In comparison with traditional coordinate-based methods and distance-matrix methods, the minimum vertex-type sequence indexing scheme has many other remarkable advantages. Furthermore, this indexing scheme can be easily generalized to clusters on other high-symmetry lattices. Our work can facilitate cluster indexing and searching in various situations, it may inspire the search of other practical indexing schemes for handling clusters of large sizes.

cond-mat.mtrl-sci↗

arXiv2016

The formation of boron sheet at the Ag(111) surface: From clusters, ribbons, to monolayers

Boron (B) sheet has been intently studied and various candidates with vacancies have been proposed by theoretical investigations, including the possible growth on metal surface. However, a recent experiment (Science 350, 1513, 2015) reported that the sheet formed on the Ag(111) surface was a buckled triangular lattice without vacancy. Our calculations combined with High-Throughput screening and the first-principles method demonstrate a novel growth mechanism of boron sheet from clusters, ribbons, to monolayers, where the B-Ag interaction is dominant in the nucleation of boron nanostructures. We have found that the simulated STM image of the sheet with 1/6 vacancies in a stripe pattern is in better agreement with the experimental observation, which is energetically favored during the nucleation and growth.

cond-mat.mtrl-sci↗

arXiv2014

Quasilattice-conserved optimization of the atomic structure of decagonal Al-Co-Ni quasicrystals

The detailed atomic structure of quasicrystals has been an open question for decades. Here, we present a quasilattice-conserved optimization method (quasiOPT), with particular quasiperiodic boundary conditions. As the atomic coordinates described by basic cells and quasilattices, we are able to maintain the self-similarity characteristics of qusicrystals with the atomic structure of the boundary region updated timely following the relaxing region. Exemplified with the study of decagonal Al-Co-Ni (d-Al-Co-Ni), we propose a more stable atomic structure model based on Penrose quasilattice and our quasiOPT simulations. In particular, "rectangle-triangle" rules are suggested for the local atomic structures of d-Al-Co-Ni quasicrystals.

cond-mat.mtrl-sci↗

arXiv2014

Theoretical search for half-Heusler topological insulators

We have performed ab-initio band structure calculations on more than two thousand half-Heusler compounds in order to search for new candidates for topological insulators. Herein, LiAuS and NaAuS are found to be the strongest topological insulators with the bulk band gap of 0.20 and 0.19 eV, respectively, different from the zero band gap feature reported in other Heusler topological insulators. Due to the inversion asymmetry of the Heusler structure, their topological surface states on the top and bottom surfaces exhibit p-type and n-type carriers, respectively. Thus, these materials may serve as an ideal platform for the realization of topological magneto-electric effects as polar topological insulators. Moreover, these topological surface states exhibit the right-hand spin-texture in the upper Dirac cone, which distinguish them from currently known topological insulator materials. Their topological nontrivial character remains robust against in-plane strains, which makes them suitable for epitaxial growth of films.

cond-mat.mtrl-sci↗

arXiv2010

Stability of hydrogenated group-IV nanostructures: magic structures of diamond nanocrystals and Silicon quantum dots

We have developed an effective model to investigate the energetic stability of hydrogenated group-IV nanostructures, followed by validations from first-principles calculations. It is found that the Hamiltonian of X$_{m}$H$_{n}$ (X=C, Si, Ge and Sn) can be expressed analytically by a linear combination of the atom numbers ($m$, $n$), indicating a dominating contribution of X$-$X and X$-$H local interactions. As a result, we explain the stable nanostructures observed experimentally, and provide a reliable and efficient technique of searching the magic structures of diamond nanocrystals(Dia-NCs) and Silicon quantum dots(SiQDs).

cond-mat.mtrl-sci↗