arXiv subjects

Yu-Ping Sun

Publications and source records attributed to Yu-Ping Sun.

15 recordsLinked to original sources

arXiv2026

Interfacial Noncollinear Filtering of Spin Hall Currents

Spin Hall currents generated in nonmagnetic materials are conventionally regarded as bulk responses whose polarization is fixed by crystal symmetry. This view has motivated the search for intrinsically low-symmetry spin sources when unconventional spin polarizations are required. Here we point out that, in realistic heterostructures, the device-relevant quantity is not the fully symmetry-averaged bulk spin Hall current, but the emitted spin current transmitted across the interface. We therefore establish emitted spin currents as bulk-interface hybrid responses and propose interfacial noncollinear filtering as a mechanism to bypass the bulk-symmetry constraint. A low-symmetry interfacial spin-orbit field, generally noncollinear with the momentum-resolved spin polarization of the incident spin Hall current, imposes spin-dependent transmission and converts hidden momentum-resolved spin-polarization components into an observable unconventional emitted spin current. Using both a rotationally symmetric minimal model and a realistic high-symmetry Dirac-semimetal model, we show that conventional spin Hall sources can emit sizable out-of-plane spin currents when their hidden bulk spin Hall textures are selectively transmitted by the interfacial spin-orbit field. Our results reveal that spin-current polarization emerges from the cooperative action of bulk and interfacial responses, providing a strategy for reprogramming spin-current polarization in high-efficiency, CMOS-compatible spin Hall materials without relying on intrinsically low-symmetry bulk crystals or external symmetry-breaking schemes.

cond-mat.mes-hall↗

arXiv2026

Atom-selective spin-polarized transport in a charge-ordered altermagnet

Altermagnets provide a promising platform for spin-polarized transport without net magnetization, but their transport properties are usually discussed in terms of momentum-space spin splitting. Here, using first-principles calculations and quantum transport simulations, we show that the charge-ordered altermagnet $\alpha$-Fe$_2$PO$_5$ exhibits a distinct form of real-space spin selectivity despite weak altermagnetic spin splitting near the Fermi level. The charge order creates inequivalent Fe$^{2+}$ and Fe$^{3+}$ sites within each sublattice, while the puckered C-type antiferromagnetic stacking suppresses inter-sublattice transport. As a result, electron and hole doping activate spin-polarized transport predominantly through Fe$^{3+}$- and Fe$^{2+}$-based channels, respectively. These atom-selective channels carry opposite spin polarizations on the two antiferromagnetic sublattices, giving rise to a globally compensated charge current with hidden N\'eel spin character. We further propose an all-in-one $\alpha$-Fe$_2$PO$_5$ tunnel junction, where matching or mismatching atom-selective conduction channels yields orders-of-magnitude conductance modulation. Our findings establish a real-space design principle for atomically controlled spin functionality and spintronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Magnetoelastic Transport-Path Reconstruction and Giant Magnetotransport Responses in a Two-Dimensional Antiferromagnet

Nonvolatile magnetotransport responses in a single magnetic material have generally not been expected to exhibit a large ON/OFF ratio, because they are usually tied to spin-orbit coupling and therefore remain relatively weak. Here we show, contrary to this expectation, that giant nonvolatile magnetotransport can arise in a single magnetic material through magnetoelastic reconstruction of nonrelativistic real-space transport paths. Using the two-dimensional antiferromagnet FePS$_{3}$ as a representative system, first-principles quantum transport calculations reveal that charge transport is strongly tied to its quasi-one-dimensional zigzag sublattice chains and, under suitable doping, can even become confined to them. Moreover, strain lifts the degeneracy among symmetry-related zigzag variants and thus reorients these transport paths through magnetoelastic coupling. As a result, both the longitudinal and transverse conductivities change dramatically, yielding a giant magnetoelastic magnetoresistance of up to $10^{4}$% and an energy-independent Hall ratio that far exceeds the spontaneous Hall ratios found in conventional magnets. These results establish a route to exploiting symmetry-related magnetic variants and their associated transport paths for reconfigurable, high-performance spintronic devices with large nonvolatile readout contrast.

cond-mat.mtrl-sci↗

arXiv2026

Discovery of a hybridization-wave electronic order in a van der Waals Kondo lattice

Kondo lattice systems, in which localized magnetic moments coherently hybridize with itinerant electrons, exhibit a rich landscape of emergent quantum phenomena. Within this framework, the hybridization strength itself has been theoretically proposed as a spatially modulated order parameter, giving rise to a so-called hybridization wave. However, direct experimental evidence of this quantum state has remained an outstanding challenge. Here, we report the direct observation of a hybridization wave in the layered transition metal dichalcogenide 6R-TaS2, a naturally occurring heterostructure composed of alternating 1T- and 1H-TaS2 layers. Using scanning tunneling microscopy and spectroscopy (STM/STS), we identify the hybridization gap in 1T layer, demonstrating the establishment of a coherent Kondo lattice. Notably, we discover that the hybridization gap present a uniaxial unit-cell doubling modulation, which breaks the both translational and rotational symmetries of the underlying Star-of-David superlattice. Such unit-cell doubling is not caused by structural topography, and therefore, constitutes the real-space visualization of the hybridization-wave order. Furthermore, the hybridization wave correlates with an energy-dependent nematic order that shares the same periodicity and orientation, revealing intertwined electronic instabilities. Our findings not only validate a long-standing prediction but also establish layer-engineered van der Waals materials as a versatile platform for exploring and controlling hybridization-driven quantum phases.

cond-mat.str-el↗

arXiv2025

Interface-controlled antiferromagnetic tunnel junctions

Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase operation speed and packing density. Current prototypes of AFM tunnel junctions (AFMTJs) exploit antiferromagnets either as spin-filter insulating barriers or as metal electrodes supporting bulk spin-dependent currents. Here, we highlight a largely overlooked AFMTJ prototype, where bulk-spin-degenerate electrodes with an A-type AFM stacking form magnetically uncompensated interfaces, enabling spin-polarized tunneling currents and a sizable tunneling magnetoresistance (TMR) effect. Using first-principles quantum-transport calculations and the van der Waals (vdW) metal Fe$_{4}$GeTe$_{2}$ as a representative A-type AFM electrode, we demonstrate a large negative TMR arising solely from the alignment of interfacial magnetic moments. This prototype of AFMTJs can also be realized with various non-vdW A-type AFM metals that support roughness-insensitive surface magnetization. Beyond TMR, AFMTJs based on A-type antiferromagnets allow convenient switching of the N\'eel vector, opening a new paradigm for AFM spintronics that leverages spin-dependent properties at AFM interfaces.

cond-mat.mtrl-sci↗

arXiv2025

Deterministic Switching of the N\'{e}el Vector by Asymmetric Spin Torque

N\'eel vector, the order parameter of collinear antiferromagnets, serves as a state variable in associated antiferromagnetic (AFM) spintronic devices to encode information. A deterministic switching of N\'eel vector is crucial for the write-in operation, which, however, remains a challenging problem in AFM spintronics. Here we demonstrate, based on analytical derivation and macro-spin simulations, that N\'eel vector switching can be generally achieved via a current-induced spin torque, provided the spin accumulations responsible for this torque are non-identical between opposite sublattices. This condition occurs widely in AFM films, as symmetry equivalence between sublattice-dependent spin accumulations is usually absent, allowing unequal spin accumulations induced by Edelstein effect or a spin current. Unlike previously studied spin torques induced by uniform or staggered spin accumulations -- where either the field-like or damping-like component dominates exclusively -- the asymmetric spin torque features cooperative contributions from both components, leading to N\'eel vector dynamics that are fundamentally distinct from previous expectations. Crucially, the static states stabilized by the asymmetric spin torque enable versatile N\'eel vector switching strategies -- field-free spin-transfer torque switching during current application, as well as field-free or field-assisted spin-orbit torque switching after the current pulse -- demonstrating that established spin torque techniques from ferromagnetic spintronics can be directly adapted to AFM systems, a capability absent in previous theoretical frameworks. Our work establishes a general mechanism for current-induced N\'eel vector switching, which is in principle feasible for all collinear antiferromagnets, and thus paves the route to realize efficient writing in AFM spintronics.

cond-mat.mtrl-sci↗

arXiv2025

Giant Uncompensated Magnon Spin Currents in X-type Magnets

Magnon spin currents in insulating magnets are useful for low-power spintronics. However, in magnets stacked by antiferromagnetic (AFM) exchange coupling, which have recently aroused significant interest for potential applications in spintronics, these currents are largely counteracted by opposite magnetic sublattices, thus suppressing their net effect. Contrary to this common observation, here, we show that magnets with X-type AFM stacking, where opposite magnetic sublattices form orthogonal intersecting chains, support giant magnon spin currents with minimal compensation. Our model Hamiltonian calculations predict magnetic chain locking of magnon spin currents in these X-type magnets, significantly reducing their compensation ratio. In addition, the one-dimensional nature of the chain-like magnetic sublattices enhances magnon spin conductivities surpassing those of two-dimensional ferromagnets and canonical altermagnets. Notably, uncompensated X-type magnets, such as odd-layer antiferromagnets and ferrimagnets, can exhibit magnon spin currents polarized opposite to those expected by their net magnetization. These unprecedented properties of X-type magnets, combined with their inherent advantages resulting from AFM coupling, offer a promising new path for low-power high-performance spintronics.

cond-mat.mtrl-sci↗

arXiv2023

Superconductivity and Charge-density-wave-like Transition in Th2Cu4As5

We report the synthesis, crystal structure, and physical properties of a novel ternary compound, Th$_2$Cu$_4$As$_5$. The material crystallizes in a tetragonal structure with lattice parameters $a=4.0716(1)$ {\AA} and $c=24.8131(4)$ {\AA}. Its structure can be described as an alternating stacking of fluorite-type Th$_2$As$_2$ layers with antifluorite-type double-layered Cu$_4$As$_3$ slabs. The measurement of electrical resistivity, magnetic susceptibility and specific heat reveals that Th$_2$Cu$_4$As$_5$ undergoes bulk superconducting transition at 4.2 K. Moreover, all these physical quantities exhibit anomalies at 48 K, where the Hall coefficient change the sign. These findings suggest a charge-density-wave-like (CDW) transition, making Th$_2$Cu$_4$As$_5$ a rare example for studying the interplay between CDW and superconductivity.

cond-mat.supr-con↗

arXiv2022

Interplay of broken symmetry and delocalized excitations in the insulating state of 1$T$-TaS$_2$

Coexistence of localized and extended excitations is central to the macroscopic properties of correlated materials. For 5d transition metal compounds, electron correlations alone generally do not lead to a metal-insulator (Mott) transition, with insulating behavior usually resulting from their coupling with magnetic ordering and/or structural distortions. 1$T$-TaS$_2$ is a prototypical example of such correlated insulating behavior, with a high-symmetry metallic phase transforming into a distorted, charge density wave (CDW) insulating state at low temperatures. The relevance of the localized electron physics at play in 3d compounds to these 5d transition metal compounds remains an open question. We resolved this standing controversy in 1$T$-TaS$_2$ combining resonant inelastic X-ray spectroscopy and first-principles calculations. We observed five electronic excitations arising from the interband transitions of the Ta 5d orbitals and the S 3p ligand state, with none of the excitations on the order of the Mott gap. These excitations cannot be explained within the framework of standard multiplet calculations that assume a localized wavefunction, but instead, are captured by a band theory framework accounting for the low symmetry of the crystal field in the CDW state. Our findings suggest that the electronic property of 1$T$-TaS$_2$ is dominated by both plasmonic quasiparticles and inter-band transitions associated with a Drude-type response, with no resonance associated with a putative Mott transition. Our discovery provides new insights into the electron localization and the onset of insulating behavior in 5d transition metal materials.

cond-mat.mtrl-sci↗

arXiv2021

Inducing and tuning Kondo screening in a narrow-electronic-band system

Although the single-impurity Kondo physics has already been well understood, the understanding of the Kondo lattice problem where a dense array of local moments couples to the conduction electrons is still far from complete. The ability of creating and tuning the Kondo lattice in non-f-electron systems will be great helpful for further understanding the Kondo lattice behavior. Here we show that the Pb intercalation in the charge-density-wave-driven narrow-electronic-band system 1T-TaS2 induces a transition from the insulating gap to a sharp Kondo resonance in the scanning tunneling microscopy measurements. It results from the Kondo screening of the localized moment in the 13-site Star-of-David clusters of 1T-TaS2, and thus confirms the cluster Mott localization of the unpaired electrons and local moment formation in the 1T-TaS2 layer. As increasing the Pb concentration, the narrow electronic band derived from the localized electrons shifts away from the Fermi level and the Kondo resonance peak is gradually suppressed. Our results pave a way for creating and tuning many-body electronic states in layered narrow-electronic-band materials.

cond-mat.str-el↗

arXiv2021

Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS$_2$-Related Layered Materials

Here we use low-temperature scanning tunneling microscopy and spectroscopy (STM/STS) to reveal the roles of the narrow electronic band in two 1T-TaS$_2$-related materials (bulk 1T-TaS$_2$ and 4Hb-TaS$_2$). 4Hb-TaS$_2$ is a superconducting compound with alternating 1T-TaS$_2$ and 1H-TaS$_2$ layers, where the 1H-TaS$_2$ layer has weak charge density wave (CDW) pattern and reduces the CDW coupling between the adjacent 1T-TaS$_2$ layers. In the 1T-TaS$_2$ layer of 4Hb-TaS$_2$, we observe a narrow electronic band located near Fermi level, and its spatial distribution is consistent with the tight-binding calculations for two-dimensional 1T-TaS$_2$ layers. The weak electronic hybridization between the 1T-TaS$_2$ and 1H-TaS$_2$ layers in 4Hb-TaS$_2$ shifts the narrow electronic band to be slightly above the Fermi level, which suppresses the electronic correlation induced band splitting. In contrast, in bulk 1T-TaS$_2$, there is an interlayer CDW coupling induced insulating gap. In comparison with the spatial distributions of the electronic states in bulk 1T-TaS$_2$ and 4Hb-TaS$_2$, the insulating gap in bulk 1T-TaS$_2$ results from the formation of a bonding band and an antibonding band due to the overlap of the narrow electronic bands in the dimerized 1T-TaS$_2$ layers.

cond-mat.mes-hall↗

arXiv2020

Possible strain induced Mott gap collapse in 1T-TaS$_2$

Tuning the electronic properties of a matter is of fundamental interest in scientific research as well as in applications. Recently, the Mott insulator-metal transition has been reported in a pristine layered transition metal dichalcogenides 1T-TaS$_2$, with the transition triggered by an optical excitation, a gate controlled intercalation, or a voltage pulse. However, the sudden insulator-metal transition hinders an exploration of how the transition evolves. Here, we report the strain as a possible new tuning parameter to induce Mott gap collapse in 1T-TaS$_2$. In a strain-rich area, we find a mosaic state with distinct electronic density of states within different domains. In a corrugated surface, we further observe and analyze a smooth evolution from a Mott gap state to a metallic state. Our results shed new lights on the understanding of the insulator-metal transition and promote a controllable strain engineering on the design of switching devices in the future.

cond-mat.str-el↗

arXiv2020

Complete Strain Mapping of Nanosheets of Tantalum Disulfide

Quasi-two-dimensional (quasi-2D) materials hold promise for future electronics because of their unique band structures that result in electronic and mechanical properties sensitive to crystal strains in all three dimensions. Quantifying crystal strain is a prerequisite to correlating it with the performance of the device, and calls for high resolution but spatially resolved rapid characterization methods. Here we show that using fly-scan nano X-ray diffraction we can accomplish a tensile strain sensitivity below 0.001% with a spatial resolution of better than 80 nm over a spatial extent of 100 $\mu$m on quasi 2D flakes of 1T-TaS2. Coherent diffraction patterns were collected from a $\sim$ 100 nm thick sheet of 1T-TaS2 by scanning 12keV focused X-ray beam across and rotating the sample. We demonstrate that the strain distribution around micron and sub-micron sized 'bubbles' that are present in the sample may be reconstructed from these images. The experiments use state of the art synchrotron instrumentation, and will allow rapid and non-intrusive strain mapping of thin film samples and electronic devices based on quasi 2D materials.

cond-mat.mtrl-sci↗

arXiv2018

Peculiar Phase Diagram with Isolated Superconducting Regions in ThFeAsN$_{1-x}$O$_x$

ThFeAsN$_{1-x}$O$_x$ ($0\leq x\leq0.6$) system with heavy electron doping has been studied by the measurements of X-ray diffraction, electrical resistivity, magnetic susceptibility and specific heat. The non-doped compound exhibits superconductivity at $T_\mathrm{c}^\mathrm{onset}=30$ K, which is possibly due to an internal uniaxial chemical pressure that is manifested by the extremely small value of As height with respect to the Fe plane. With the oxygen substitution, the $T_\mathrm{c}$ value decreases rapidly to below 2 K for $0.1\leq x\leq0.2$, and surprisingly, superconductivity re-appears in the range of $0.25\leq x\leq0.5$ with a maximum $T_\mathrm{c}^\mathrm{onset}$ of 17.5 K at $x=0.3$. For the normal-state resistivity, while the samples in intermediate non-superconducting interval exhibit Fermi liquid behavior, those in other regions show a non-Fermi-liquid behavior. The specific heat jump for the superconducting sample of $x=0.4$ is $\Delta C/(\gamma T_\mathrm{c})=0.89$, which is discussed in terms of anisotropic superconducting gap. The peculiar phase diagram in ThFeAsN$_{1-x}$O$_x$ presents additional ingredients for understanding the superconducting mechanism in iron-based superconductors.

cond-mat.supr-con↗

arXiv2009

Photoinduced magnetization change in multiferroic YbFe2O4

We have studied the influence of laser illumination on the magnetization in multiferroic YbFe2O4 single crystals. A photoinduced magnetization change has been confirmed in both ab plane and c axis direction. The temperature dependence of the photoinduced magnetization reduction excludes laser heating as the cause. In terms of the breakdown of charge order driven by laser illumination, the photoinduced magnetization change provides a strong evidence for the spin-charge coupling in YbFe2O4. This photomagnetic effect based on charge-order-induced multiferroicity could be used for non-thermal optical control of magnetization.

cond-mat.str-el↗