arXiv subjects

Yu-Tsun Shao

Publications and source records attributed to Yu-Tsun Shao.

At least 19 recordsLinked to original sources

arXiv2026

High-Temperature ferromagnetism from site-selective filling in (Fe,Ni)$_{6-\delta}$GeTe$_2$

The discovery of high-temperature ferromagnetism in the metallic van der Waals (vdW) system Fe$_N$GeTe$_2$ has brought two-dimensional (2D) magnets into technologically relevant temperature scales. Specifically at N = 5, dilution of magnetic moments by nickel substitution counterintuitively achieves a record high Curie temperature of 478~K. Unraveling the origin of this nickel-substitution-induced enhancement is complicated by the compound's structural complexity, coexistent itinerant and local magnetic contributions, and mesoscopic compositional domains. Through coordinated structural and electronic characterization, we identify that the high-T$_C$ magnetic phase arises from a strain-stabilized Fe$_6$GeTe$_2$ nano-precipitate. Combining first-principles calculations and spin- and angle-resolved photoemission spectroscopy (ARPES), we uncover a site-specific electronic landscape in which interior iron atoms primarily host localized moments while the outer iron atoms neighboring the tellurium layers produce spin-polarized itinerant carriers that cross the vdW gap. The large energy cost associated with homogeneous nickel substitution is found to favor the spontaneous precipitation of the crystallographically and electronically ``clean'' high-T$_C$ phase. Finally, we compare metal-rich vdW magnets with binary magnetic alloys, and discuss the unifying roles of nano-precipitates in stabilizing otherwise unattainable bulk phases. Our work provides mechanistic insights into the record-high T$_C$ ferromagnetism in (Fe,Ni)$_{5+\delta}$GeTe$_2$, establishing a rigorous foundation for the atomic engineering of vdW magnetic metals informed by direct electronic signatures.

cond-mat.mtrl-sci↗

arXiv2026

Stacking-order-dependent electronic properties of MoTe2/WSe2 moiré bilayers

Transition metal dichalcogenide (TMD) moiré bilayers have realized a wide range of strongly correlated and topological phenomena. The physics in these materials is often sensitive to the interlayer stacking order. Polarization-resolved optical second harmonic generation (SHG) is the most used technique for stacking order characterization but unverified for most heterobilayers. Here we calibrate the optical SHG for angle-aligned MoTe2/WSe2 bilayers by the scanning transmission electron microscopy (STEM). We directly compare the transport and magnetic properties and the electronic phase diagram for two distinct stacking orders. With the calibrated stacking order assignment, we clarify the interpretation of earlier results, including the nature of the Chern insulator, mechanism of an electric-field-tuned metal-insulator transition at half band filling, and the Kondo lattice physics. Our work provides a consistent picture of the relation between the stacking order and the electronic properties of MoTe2/WSe2 moiré bilayers.

cond-mat.mes-hall↗

arXiv2026

Revealing buried ferroelectric topologies by depth-resolved electron diffraction imaging

Nanoscale topological polar textures promise new functionalities for ferroelectric memories and logic, yet their three-dimensional structure and mesoscale organization remain experimentally inaccessible. Here we introduce depth-resolved electron diffraction imaging (DREDI), a fast, non-destructive, method that maps polarization with <50 nm lateral and <10 nm depth sensitivity within fraction of a second. Its high acquisition speed enables the first continuous polarization mapping across six orders of magnitude in length scale, from nanometers to millimeters. Using epitaxial BiFeO3 films, DREDI reveals a hidden depth evolution of polar textures: surface 71-degree stripes evolve into subsurface flux-closure vortices that bifurcate into three-fold vertices near the bottom interface. Cross-sectional multi-slice electron ptychography and phase-field modeling confirm these buried configurations and attribute them to strain heterogeneity and ferroelastic twinning in the SrRuO3 electrode. Large-area analysis further shows that vertex-like frustration forms a mesoscale percolating network above a critical length scale of 4 um. DREDI enables real-time, volumetric studies of buried topological textures in ferroic nanomaterials.

cond-mat.mtrl-sci↗

arXiv2026

Spatially modulated morphotropic phase boundaries in a compressively strained multiferroic thin film

The coexisting rhombohedral-like (R', MA) and tetragonal-like (T', MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R'/T' twins, their self-organizing structures remain not fully explored. Here, we observed two types of interphase boundaries in a 60 nm-thick BiFeO3 film epitaxially grown on a LaAlO3 substrate by employing multi-modal diffraction-based electron microscopy. First, the flat MPBs form lines extending >1 mm, and repeat almost every ~20 um. Additionally, we uncover a new type of phase boundary with zig-zag regions of alternating R'/R' and T'/T' twin domains. Cross-sectional multislice electron ptychography confirms the atomic-scale polarization rotation across the MPB, with out-of-plane strain varying >15%. Plan-view electron backscatter diffraction reveals the lattice disclination of ~1.5-degrees across the zig-zag interphase boundaries, while having >2.5 degrees within the MPB. Phase-field modeling suggests that the formation of zig-zag phase boundaries arises from balancing between Landau and elastic energies. We speculate that such well-ordered interphase boundaries are associated with mesoscale in-plane strain modulations, thus providing a way to engineer and harness their properties for potential device applications.

cond-mat.mtrl-sci↗

arXiv2026

Mind the Gap -- Imaging Buried Interfaces in Twisted Oxide Moirés

The ability to tune electronic structure in twisted stacks of two-dimensional (2D) materials has motivated the exploration of similar moiré physics with twisted oxide membranes. Due to the intrinsic three-dimensional nature of bonding in many oxides, achieving atomic-level coupling is significantly more challenging than with van der Waals materials. Although clean interfaces with atomic-level proximity have been demonstrated in ceramic bicrystals using high-temperature and high-pressure processing to facilitate atomic diffusion that flattens rough interfaces, such conditions are not readily accessible when bonding oxide membranes. This study shows how topographic mismatch due to surface roughness of the membranes can restrict atomic-scale proximity at the interface to isolated patches even after contaminants and amorphous interlayers are eliminated. In interfaces between 2D materials and oxide membranes the reduced ability of the 2D material to conform to the membrane's step-terrace topography also limits atomic-scale contact. When imaging stacked membranes in projection, we find conventional through-focal imaging to be relatively insensitive to the buried interface, whereas electron ptychography detects structural variations on the order of a nanometer. These findings highlight interface roughness as a key challenge for the field of oxide twistronics and emphasize the need for reliable characterization methods, both in cross-section and projection.

cond-mat.mtrl-sci↗

arXiv2025

Mapping vacancy and bonding electron distributions around aluminium nanovoids

All materials have defects and many contain nanostructures, both of which disrupt chemical bonding - the basis of materials properties. No experimental measurements of bonding electron distributions associated with defects and nanostructures have ever been possible. We present a method enabling such measurements and interrogate nanovoids surrounded by vacancies - the most fundamental of nanostructures and defects - in aluminium. We measure the volume of a vacancy with 3% uncertainty and map vacancy concentrations surrounding nanovoids with nanometre resolution in three dimensions where previously only two-dimensional mapping was possible. We discover that radiation-damaged voids can "heal". Our bonding measurements are depth-resolved, vacancy-sensitive, and agree with density functional theory. This work opens bonding electron density measurements to inhomogeneous nanostructured multi-phased materials so that the electronic origins of phenomena such as strengthening, weakening, interface functionality, solute diffusion and phase transformations within them may be revealed.

cond-mat.mtrl-sci↗

arXiv2025

Cepstral Strain Mapping for Small Pixel-Count Detectors

With the decreasing sizes of integrated-circuit components, the semiconductor industry is in growing need of high-throughput strain mapping techniques that offer high precision and spatial resolution, with desired industry goals of 0.01-0.1% and 1 nm respectively. As the fundamental limitation on the measurement precision is set by the Poisson noise, pixel array detectors with high saturation current, high dynamic range and fast readout are ideally suited for this purpose. However, due to the limited pixel count on these detectors, they do not work well with traditional strain mapping algorithms that were optimized to work on datasets with a large pixel count. Here, we evaluate the cepstral transform that was designed to address this problem, with the precision determined by the convergence, collection angles and dose while remaining insensitive to the pixel count. We test the performance of our method on silicon wedges and Si-SiGe multilayers, and using datasets collected at different conditions, we show how the measured strain precision scales as a function of dose, aperture size and sample thickness. Using precession gives a further improvement in precision by about 1.5-2x, whereas energy filtering does not have a significant impact on the cepstral method for device-relevant sample thickness ranges.

physics.ins-det↗

arXiv2025

Mic-hackathon 2024: Hackathon on Machine Learning for Electron and Scanning Probe Microscopy

Microscopy is a primary source of information on materials structure and functionality at nanometer and atomic scales. The data generated is often well-structured, enriched with metadata and sample histories, though not always consistent in detail or format. The adoption of Data Management Plans (DMPs) by major funding agencies promotes preservation and access. However, deriving insights remains difficult due to the lack of standardized code ecosystems, benchmarks, and integration strategies. As a result, data usage is inefficient and analysis time is extensive. In addition to post-acquisition analysis, new APIs from major microscope manufacturers enable real-time, ML-based analytics for automated decision-making and ML-agent-controlled microscope operation. Yet, a gap remains between the ML and microscopy communities, limiting the impact of these methods on physics, materials discovery, and optimization. Hackathons help bridge this divide by fostering collaboration between ML researchers and microscopy experts. They encourage the development of novel solutions that apply ML to microscopy, while preparing a future workforce for instrumentation, materials science, and applied ML. This hackathon produced benchmark datasets and digital twins of microscopes to support community growth and standardized workflows. All related code is available at GitHub: https://github.com/KalininGroup/Mic-hackathon-2024-codes-publication/tree/1.0.0.1

cond-mat.mtrl-sci↗

arXiv2025

Microscopic mechanisms of flexoelectricity in oxide membranes

Modern electromechanical actuators and sensors rely on the piezoelectric effect that linearly couples strain and electric polarization. However, this effect is restricted to materials that lack inversion symmetry. In contrast, the flexoelectric effect couples strain gradients to electric polarization, and is a universal property in insulating materials of arbitrary symmetry. Flexoelectricity becomes prominent at the nanoscale from the inverse scaling of strain gradients with material dimensions. Here, we measure the strain-gradient-induced structural distortions in strontium titanate using multislice electron ptychography. This technique enables reliable picometer-scale measurements of the dominant oxygen-titanium distortions, correcting for artifacts that limited conventional imaging methods. This enables us to directly measure the sign of the net ionic contribution to the flexoelectric polarization. Guided by the experimental measurements, first-principles calculations show how the sign and magnitude of the bulk contribution to the flexoelectric coefficient in strontium titanate can be switched by tuning the strain state. Hybridization between the optical soft phonon and acoustic phonon modes drives this transition, yielding a large response and a polarity switch across the resonance. This strain-dependence might explain the sign discrepancy and orders of magnitude variation in the values of previously reported flexoelectric coefficients for strontium titanate. As the strain state of curved membranes can be tuned, our approach also suggests an approach to engineer nanoscale flexoelectric polarization using strain as a control parameter.

cond-mat.mtrl-sci↗

arXiv2025

Emittance Minimization for Aberration Correction II: Physics-informed Bayesian Optimization of an Electron Microscope

Aberration-corrected Scanning Transmission Electron Microscopy (STEM) has become an essential tool in understanding materials at the atomic scale. However, tuning the aberration corrector to produce a sub-Ångström probe is a complex and time-costly procedure, largely due to the difficulty of precisely measuring the optical state of the system. When measurements are both costly and noisy, Bayesian methods provide rapid and efficient optimization. To this end, we develop a Bayesian approach to fully automate the process by minimizing a new quality metric, beam emittance, which is shown to be equivalent to performing aberration correction. In part I, we derived several important properties of the beam emittance metric and trained a deep neural network to predict beam emittance growth from a single Ronchigram. Here we use this as the black box function for Bayesian Optimization and demonstrate automated tuning of simulated and real electron microscopes. We explore different surrogate functions for the Bayesian optimizer and implement a deep neural network kernel to effectively learn the interactions between different control channels without the need to explicitly measure a full set of aberration coefficients. Both simulation and experimental results show the proposed method outperforms conventional approaches by achieving a better optical state with a higher convergence rate.

physics.ins-det↗

arXiv2025

Electron ptychography reveals a ferroelectricity dominated by anion displacements

Sodium niobate, a lead-free ferroic material, hosts delicately-balanced, competing order parameters, including ferroelectric states that can be stabilized by epitaxial strain. Here, we show that the resulting macroscopic ferroelectricity exhibits an unconventional microscopic structure using multislice electron ptychography. This technique overcomes multiple scattering artifacts limiting conventional electron microscopy, enabling both lateral spatial resolution beyond the diffraction limit and recovery of three-dimensional structural information. These imaging capabilities allow us to separate the ferroelectric interior of the sample from the relaxed surface structure and identify the soft phonon mode and related structural distortions with picometer precision. Unlike conventional ferroelectric perovskites, we find that the polar distortion in this material involves minimal distortions of the cation sublattices and is instead dominated by anion displacements relative to the niobium sublattice. We establish limits on film thickness for interfacial octahedral rotation engineering and directly visualize a random octahedral rotation pattern, arising from the flat dispersion of the associated phonon mode.

cond-mat.mtrl-sci↗

arXiv2024

Emittance Minimization for Aberration Correction I: Aberration correction of an electron microscope without knowing the aberration coefficients

Precise alignment of the electron beam is critical for successful application of scanning transmission electron microscopes (STEM) to understanding materials at atomic level. Despite the success of aberration correctors, aberration correction is still a complex process. Here we approach aberration correction from the perspective of accelerator physics and show it is equivalent to minimizing the emittance growth of the beam, the span of the phase space distribution of the probe. We train a deep learning model to predict emittance growth from experimentally accessible Ronchigrams. Both simulation and experimental results show the model can capture the emittance variation with aberration coefficients accurately. We further demonstrate the model can act as a fast-executing function for the global optimization of the lens parameters. Our approach enables new ways to quickly quantify and automate aberration correction that takes advantage of the rapid measurements possible with high-speed electron cameras. In part II of the paper, we demonstrate how the emittance metric enables rapid online tuning of the aberration corrector using Bayesian optimization.

physics.ins-det↗

arXiv2024

Imaging interstitial atoms with multislice electron ptychography

Doping impurity atoms is a strategy commonly used to tune the functionality of materials including catalysts, semiconductors, and quantum emitters. The location of dopants and their interaction with surrounding atoms could significantly modulate the transport, optical, or magnetic properties of materials. However, directly imaging individual impurity atoms inside materials remains a generally unaddressed need. Here, we demonstrate how single atoms can be detected and located in three dimensions via multislice electron ptychography.Interstitial atoms in a complex garnet oxide heterostructure are resolved with a depth resolution better than 2.7 nm, together with a deep-sub-Ångstrom lateral resolution. Single-scan atomic-layer depth resolution should be possible using strongly divergent electron probe illumination. Our results provide a new approach to detecting individual atomic defects and open doors to characterize the local environments and spatial distributions that underlie a broad range of systems such as single-atom catalysts, nitrogen-vacancy centers, and other atomic-scale quantum sensors.

cond-mat.mtrl-sci↗

arXiv2024

Kinetic control of ferroelectricity in ultrathin epitaxial Barium Titanate capacitors

Ferroelectricity is characterized by the presence of spontaneous and switchable macroscopic polarization. Scaling limits of ferroelectricity have been of both fundamental and technological importance, but the probes of ferroelectricity have often been indirect due to confounding factors such as leakage in the direct electrical measurements. Recent interest in low-voltage switching electronic devices squarely puts the focus on ultrathin limits of ferroelectricity in an electronic device form, specifically on the robustness of ferroelectric characteristics such as retention and endurance for practical applications. Here, we illustrate how manipulating the kinetic energy of the plasma plume during pulsed laser deposition can yield ultrathin ferroelectric capacitor heterostructures with high bulk and interface quality, significantly low leakage currents and a broad "growth window". These heterostructures venture into previously unexplored aspects of ferroelectric properties, showcasing ultralow switching voltages ($<$0.3 V), long retention times ($>$10$^{4}$s), and high endurance ($>$10$^{11}$cycles) in 20 nm films of the prototypical perovskite ferroelectric, BaTiO$_{3}$. Our work demonstrates that materials engineering can push the envelope of performance for ferroelectric materials and devices at the ultrathin limit and opens a direct, reliable and scalable pathway to practical applications of ferroelectrics in ultralow voltage switches for logic and memory technologies.

physics.app-ph↗

arXiv2024

Hydrogen is not necessary for superconductivity in topotactically reduced nickelates

A key open question in the study of layered superconducting nickelate films is the role that hydrogen incorporation into the lattice plays in the appearance of the superconducting state. Due to the challenges of stabilizing highly crystalline square planar nickelate films, films are prepared by the deposition of a more stable parent compound which is then transformed into the target phase via a topotactic reaction with a strongly reducing agent such as CaH$_2$. Recent studies, both experimental and theoretical, have introduced the possibility that the incorporation of hydrogen from the reducing agent into the nickelate lattice may be critical for the superconductivity. In this work, we use secondary ion mass spectrometry to examine superconducting La$_{1-x}$X$_x$NiO$_2$ / SrTiO$_3$ (X = Ca and Sr) and Nd$_6$Ni$_5$O$_{12}$ / NdGaO$_3$ films, along with non-superconducting NdNiO$_2$ / SrTiO$_3$ and (Nd,Sr)NiO$_2$ / SrTiO$_3$. We find no evidence for extensive hydrogen incorporation across a broad range of samples, including both superconducting and non-superconducting films. Theoretical calculations indicate that hydrogen incorporation is broadly energetically unfavorable in these systems, supporting our conclusion that hydrogen incorporation is not generally required to achieve a superconducting state in layered square-planar nickelates.

cond-mat.supr-con↗

arXiv2023

A hybrid pulsed laser deposition approach to grow thin films of chalcogenides

Vapor-pressure mismatched materials such as transition metal chalcogenides have emerged as electronic, photonic, and quantum materials with scientific and technological importance. However, epitaxial growth of vapor-pressure mismatched materials are challenging due to differences in the reactivity, sticking coefficient, and surface adatom mobility of the mismatched species constituting the material, especially sulfur containing compounds. Here, we report a novel approach to grow chalcogenides - hybrid pulsed laser deposition - wherein an organosulfur precursor is used as a sulfur source in conjunction with pulsed laser deposition to regulate the stoichiometry of the deposited films. Epitaxial or textured thin films of sulfides with variety of structure and chemistry such as alkaline metal chalcogenides, main group chalcogenides, transition metal chalcogenides and chalcogenide perovskites are demonstrated, and structural characterization reveal improvement in thin film crystallinity, and surface and interface roughness compared to the state-of-the-art. The growth method can be broadened to other vapor-pressure mismatched chalcogenides such as selenides and tellurides. Our work opens up opportunities for broader epitaxial growth of chalcogenides, especially sulfide-based thin film technological applications.

cond-mat.mtrl-sci↗

arXiv2023

Smooth, homogeneous, high-purity Nb3Sn superconducting RF resonant cavity by seed-free electrochemical synthesis

Workbench-size particle accelerators, enabled by Nb3Sn-based superconducting radio-frequency (SRF) cavities, hold the potential of driving scientific discovery by offering a widely accessible and affordable source of high-energy electrons and X-rays. Thin-film Nb3Sn RF superconductors with high quality factors, high operation temperatures, and high-field potentials are critical for these devices. However, surface roughness, non-stoichiometry, and impurities in Nb3Sn deposited by conventional Sn-vapor diffusion prevent them from reaching their theoretical capabilities. Here we demonstrate a seed-free electrochemical synthesis that pushes the limit of chemical and physical properties in Nb3Sn. Utilization of electrochemical Sn pre-deposits reduces the roughness of converted Nb3Sn by five times compared to typical vapor-diffused Nb3Sn. Quantitative mappings using chemical and atomic probes confirm improved stoichiometry and minimized impurity concentrations in electrochemically synthesized Nb3Sn. We have successfully applied this Nb3Sn to the large-scale 1.3 GHz SRF cavity and demonstrated ultra-low BCS surface resistances at multiple operation temperatures, notably lower than vapor-diffused cavities. Our smooth, homogeneous, high-purity Nb3Sn provides the route toward high efficiency and high fields for SRF applications under helium-free cryogenic operations.

cond-mat.mtrl-sci↗

arXiv2023

Emergent chirality in a polar meron to skyrmion phase transition

Polar skyrmions are predicted to emerge from the interplay of elastic, electrostatic and gradient energies, in contrast to the key role of the anti-symmetric Dzyalozhinskii-Moriya interaction in magnetic skyrmions. With the discovery of topologically-stable polar skyrmions, it is of both fundamental and practical interest to understand the microscopic nature and the possibility of temperature- and strain-driven phase transitions in ensembles of such polar skyrmions. Here, we explore the reversible transition from a skyrmion state (topological charge of -1) to a two-dimensional, tetratic lattice of merons (with topological charge of -1/2) upon varying the temperature and elastic boundary conditions in [(PbTiO3)16/(SrTiO3)16]8 lifted-off membranes. This topological phase transition is accompanied by a change in chirality, from zero-net chirality (in meronic phase) to net-handedness (in skyrmionic phase). To map these changes microscopically required developing new imaging methods. We show how scanning convergent beam electron diffraction provides a robust measure of the local polarization simultaneously with the strain state at sub-nm resolution, while also directly mapping the chirality of each skyrmion. Using this, we demonstrate strain as a crucial order parameter to drive isotropic-to-anisotropic structural transitions of chiral polar skyrmions to non-chiral merons, validated with X-ray reciprocal space mapping and theoretical phase-field simulations. These results revealed by our new measurement methods provide the first illustration of systematic control of rich variety of topological dipole textures by altering the mechanical boundary conditions, which may offer a promising way to control their functionalities in ferroelectric nanodevices using the local and spatial distribution of chirality and order.

cond-mat.mes-hall↗