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Yu-Ze Wang

Publications and source records attributed to Yu-Ze Wang.

7 recordsLinked to original sources

Improved Cryogenic Photodiode Optical Biasing for Low-Noise and Low-Jitter Superconducting Nanowire Single-Photon Detectors

We experimentally demonstrate an improved optical biasing scheme for superconducting nanowire single-photon detectors (SNSPDs), which employs a cryogenic InGaAs-InP photodiode (PD) as a local bias source. It is found that, under illumination from a stable external light source, this PD generates a stable photocurrent in a cryogenic environment (~2.3 K), with fluctuations in the photocurrent primarily attributed to fluctuations in the incident optical power. Furthermore, by screening and effectively blocking stray photons leaking from the PD, which give rise to background dark counts, we have achieved an SNSPD exhibiting an ultra-low intrinsic dark count rate of 1e-4 cps. Utilizing this improved optical biasing technique, our SNSPD achieved performance comparable to that obtained under conventional electrical biasing: a system detection efficiency of 80.7%, a background dark count rate of 32.6 cps, and a minimum timing jitter of 57.5 ps. These results indicate that cryogenic-PD-based optical biasing serves as a viable, low-noise, and low-jitter alternative to traditional electrical biasing. Moreover, this work offers useful design guidance for the future development of PD-based low-noise bias sources and for the construction of all-photonic SNSPD systems tailored for high-precision quantum photonics applications.

quant-ph

Impact of helium ion irradiation on the thermal properties of superconducting nanowire single-photon detectors

SNSPDs are indispensable for applications ranging from quantum information processing to deep-space optical communications, owing to their high detection efficiency, low dark counts, and excellent timing resolution. However, further improving the intrinsic detection efficiency (IDE) remains crucial for optimizing SNSPD performance. Ion irradiation has recently emerged as a powerful post-fabrication method to enhance SNSPD characteristics. Here, we studied the effects of He-ion irradiation on the thermal properties of NbN SNSPDs. We systematically examine the evolution of thermal boundary conductance as a function of ion fluence (0-1.1E17 ions/cm2), observing a 57% decrease from 127 to 54 W/m^2K^4 with increasing fluence, followed by saturation at approximately 9E16 ions/cm2. At this fluence, the minimum hotspot relaxation time measurements indicate a 41% increase, rising from 17 to 24 ps,while the electron-phonon interaction time decreases, with the magnitude of change depending on temperature and sample batch.TEM reveals defect formation at the NbN/SiO2 interface (6-8 nm) and He-bubble formation within the SiO2 layer (30-260 nm), contributing to the extended thermal relaxation time. These irradiation-induced modifications play a key role in enhancing the IDE of the treated devices. We further demonstrate a post-irradiation SNSPD showing a saturated IDE plateau at 2000 nm from 2.7 K to 28 mK, enabled by thermal modifications and a weakly wavelength-dependent avalanche-assisted mechanism. Our findings highlight ion irradiation as a valuable tool for thermal tailoring in SNSPDs and advance the understanding of detection physics and defect engineering in superconducting optoelectronics.

physics.app-ph

A free-space coupled, large-active-area superconducting microstrip single-photon detector for photon-counting time-of-flight imaging

Numerous applications at the photon-starved regime require a free-space coupling singlephoton detector with a large active area, low dark count rate (DCR), and superior time resolutions. Here,we developed a superconducting microstrip single-photon detector (SMSPD), with a large active area of 260 um in diameter, a DCR of ~5 kcps, and a low time jitter of ~171 ps, operated at near-infrared of 1550 nm. As a demonstration, we applied the detector to a single-pixel galvanometer scanning system and successfully reconstructed object information in depth and intensity using a time-correlated photon counting technology.

physics.app-ph

Characterization of a Superconducting Microstrip Single-Photon Detector Shunted with an External Resistor

A superconducting microstrip single-photon detector (SMSPD) generally requires a shunt resistor to avoid latching, caused by its high current-carrying capacity and low kinetic inductance. Here, the effect of the shunt resistor on the behaviors of microbridge SMSPDs was investigated. We analyzed the change in equivalent switching current at different shunt resistances in two ways and determined the operating current range using intrinsic dark count rate (iDCR) curves. We observed that the reduction in shunt resistance can increase the operating current range, which helps to improve the internal detection efficiency (IDE) and reduce the iDCR. However, the reduction in the shunt resistance can reduce the pulse amplitude and increase the pulse decay time, which can degrade the timing jitter and count rate performance of the SMSPD. The trends of the experimental results can be qualitatively reproduced using a circuit model for an SMSPD with a shunt resistor, which provides useful information for the selection of shunt resistors. Furthermore, we report the improved detection performance of a helium-ion-irradiated SMSPD shunted with a small resistance of 5.2 {\Omega}. We observed a weak IDE saturation with a bias current at a wavelength up to 2000 nm and a nonlinear relation between detection current and photon energy.

physics.ins-det

Millimeter-scale active area superconducting microstrip single-photon detector fabricated by ultraviolet photolithography

The effective and convenient detection of single photons via advanced detectors with a large active area is becoming significant for quantum and classical applications. This work demonstrates the fabrication of a superconducting microstrip single-photon detector (SMSPD) with a millimeter-scale active area via the use of ultraviolet (UV) photolithography. The performances of NbN SMSPDs with different active areas and strip widths are characterized. SMSPDs fabricated by UV photolithography and electron beam lithography with small active areas are also compared from the aspects of the switching current density and line edge roughness. Furthermore, an SMSPD with an active area of 1 mm * 1 mm is obtained via UV photolithography, and during operation at 0.85 K, it exhibits near-saturated internal detection efficiency at wavelengths up to 800 nm. At a wavelength of 1550 nm, the detector exhibits a system detection efficiency of ~5% (7%) and a timing jitter of 102 (144) ps, when illuminated with a light spot of ~18 (600) um in diameter, respectively.

physics.ins-det

High-efficiency broadband fiber-to-chip coupler using a 3D nanoprinting microfiber

We propose a method for coupling a tapered optical fiber to an inverted tapered SiN waveguide by fabricating a microfiber using 3D nanoprinting lithography. The microfiber consists of three parts: a tapered cladding cap, an S-bend, and a straight part, all composed of high-refractive-index material. Light is adiabatically coupled from the tapered fiber to the printed microfiber through the cladding cap. The light is then transmitted through the S-bend and the straight part with low loss and is finally coupled to the waveguide through the evanescent field. In the simulation, our design can achieve a high coupling efficiency (TE mode) of ~97% at a wavelength of 1542 nm with a wide bandwidth of ~768 nm at the 1-dB cut-off criterion.

physics.optics

Reducing current crowding in meander superconducting strip single-photon detectors by thickening bends

To facilitate high optical coupling efficiency and absorptance, the active area of a superconducting nano/microstrip single-photon detector (SNSPD/SMSPD) is often designed as a meander configuration with a high filling factor (e.g., >=0.5). However, the switching current (Isw) of SNSPD/SMSPD, at which the detector switches into the normal state, is significantly suppressed by a geometry-induced "current crowding effect", where there are sharp bends in the strip. Here we propose and experimentally verify an alternative method to reduce current crowding both in SNSPD and SMSPD by directly increasing the thickness of the bends through the deposition and lift-off of a secondary superconducting film. We measure and compare the performance of SNSPDs and SMSPDs with different filling factors and bend configurations, with or without thickened bends. Improvements for detectors were observed in detection efficiency, intrinsic dark count rate, and time jitter, owing to the enhanced Isw. Our method provides a promising way of optimizing SNSPD/SMSPD detection performance.

physics.app-ph