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Yu. G. Selivanov

Publications and source records attributed to Yu. G. Selivanov.

13 recordsLinked to original sources

Terahertz electro-optic effect in Bi$_2$Se$_3$ crystals

We report the observation of the electro-optic effect in Bi$_2$Se$_3$ crystals induced by an intense single-cycle terahertz pulse. The effect reveals itself as a transient change of the polarization state of a femtosecond laser pulse reflected from the crystal that is exposed to the terahertz electric field. The corresponding experimental signal follows the field with a sub-100-fs delay and can be represented as a linear combination of the terahertz electric field and its square. The linear and quadratic components are of comparable magnitude. The latter is almost independent of crystal orientation, while the former demonstrates three-fold rotational symmetry in agreement with the trigonal symmetry of the crystal surface. The electro-optic effect vanishes upon phase transition to the non-topological metal state induced by indium doping and also can be quenched by a femtosecond pre-pulse. We associate this effect with surface Dirac electronic states of Bi$_2$Se$_3$ and discuss its possible mechanisms.

cond-mat.mtrl-sci

Ultrafast lattice and electron dynamics induced in a PbSe crystal by an intense terahertz pulse

We have studied the ultrafast optical response of a PbSe crystal to an intense picosecond terahertz pulse with a peak electric field strength of up to $\sim$ 500 kV/cm. The reflectivity anisotropy signal contains oscillations at the fundamental frequency of the resonant infrared-active phonon mode as well as its second, third, and fourth harmonics. The effect is ascribed to coherent anharmonic phonons resonantly excited by the strong terahertz field. Pump terahertz pulses also induce an almost instantaneous Kerr effect and a long-lived optical anisotropy of the crystal with a characteristic decay time of $\gtrsim$ 100 ps. We consider lattice distortion and phonon-assisted side valley population as possible origins of this metastable state.

cond-mat.mtrl-sci

Anharmonic coherent dynamics of the soft phonon mode of a PbTe crystal

We investigate the ultrafast optical response of PbTe to an intense single-cycle terahertz pulse, resonant with the soft transverse optical (TO) phonon mode of the crystal. We detect multifrequency oscillations of the reflectance anisotropy, which we associate with nonlinear motion of the TO phonon oscillator excited directly by the terahertz pulse. Our observation of monotonically decaying optical anisotropy together with second harmonic oscillations of the TO mode is an evidence of a transient non-centrosymmetric state of the crystal lattice that can be accompanied by the ferroelectric order. We suppose that this state is induced in the PbTe crystal by the intense terahertz pulse via alignment of the local polar nanodomains. This hypothesis is partially supported by the observation of coherent phonons near the satellite phonon mode frequency that are impulsively generated by a femtosecond laser pulse and are considerably enhanced by a synchronous terahertz pulse.

cond-mat.mtrl-sci

Anomalous behavior of the $E_u^1$ infrared-active phonon mode in a Bi$_{2-x}$Sr$_x$Se$_3$ crystal

We have studied spectral evolution of the $E_u^1$ phonon line of a topological insulator Bi$_{2-x}$Sr$_x$Se$_3$ with temperature. Unlike the Raman-active phonons, the $E_u^1$ mode demonstrates softening upon cooling the crystal, and the corresponding spectral line acquires a pronounced Fano-like shape at temperatures $T\lesssim100$ K. We interpret the latter effect as a signature of specific coupling of the bulk infrared active phonons to surface Dirac electrons. Using coherent resonant excitation of the $E_u^1$ mode as a surface sensitive tool, we have detected softening of the surface counterpart of the bulk $E_u^1$ phonon mode upon strontium doping. This observation can be an evidence of enhanced electron-phonon interaction at the surface of the Bi$_{2-x}$Sr$_x$Se$_3$ crystal.

cond-mat.mtrl-sci

Breaking of Ginzburg-Landau description in the temperature dependence of the anisotropy in the nematic superconductor

Nematic superconductors are characterized by an apparent crystal symmetry breaking that results in the anisotropy of the in-plane upper critical magnetic field $H_{c2}$. The symmetry breaking is usually attributed to the strain of the crystal lattice. The nature and the value of the strain are debatable. We perform systematic measurements of the $H_{c2}$ anisotropy in the high-quality Sr$_x$Bi$_2$Se$_3$ single crystals in the temperature range 1.8~K$<T<T_c\approx 2.7$~K using temperature stabilization with an accuracy of 0.0001 K. We observe that in all tested samples the anisotropy is weakly temperature dependent when $T<0.8\,T_c$ and smoothly decreases at higher temperatures without any sign of singularity when $T\rightarrow T_c$. Such a behavior {is in a drastic contradiction with the prediction of} the Ginzburg-Landau theory for the nematic superconductors. We discuss possible reasons for this discrepancy.

cond-mat.supr-con

Link between superconductivity and a Lifshitz transition in intercalated Bi$_2$Se$_3$

Topological superconductivity is an exotic phase of matter in which the fully gapped superconducting bulk hosts gapless Majorana surface states protected by topology. Intercalation of copper, strontium or niobium between the quintuple layers of the topological insulator Bi$_2$Se$_3$ increases the carrier density and leads to superconductivity that is suggested to be topological. Here we study the electronic structure of strontium-intercalated Bi$_2$Se$_3$ using angle resolved photoemission spectroscopy (ARPES) and Shubnikov-de Haas (SdH) oscillations. Despite the apparent low Hall number of $\sim2 \times 10 ^{19}$cm$^{-3}$, we show that the Fermi surface is shaped as an open cylinder with a larger carrier density of $\sim 10 ^{20}$cm$^{-3}$. We suggest that superconductivity in intercalated Bi$_2$Se$_3$ emerges with the appearance of a quasi-2D open Fermi surface.

cond-mat.supr-con

Phonon-driven ultrafast symmetry lowering in a Bi$_2$Se$_3$ crystal

Selective excitation of coherent high-amplitude vibrations of atoms in a solid can induce exotic nonequilibrium states, in which the character of interactions between electronic, magnetic and lattice degrees of freedom is considerably altered and the underlying symmetries are broken. Here we use intense single-cycle terahertz pulses to drive coherently the dipole-active $E_u^1$ phonon mode of a Bi$_2$Se$_3$ crystal. As a result, several Raman-active modes are simultaneously excited in a nonlinear process, while one of them, having the $E_g^2$ symmetry, experiences dynamical splitting during the first two picoseconds after excitation. The corresponding angular scattering pattern is modified indicating coexistence of two phonon modes characteristic of a nonequilibrium state with a lower crystal symmetry. We observe also a short-lived frequency splitting of the original $E_g^2$ mode that immediately after excitation amounts to $\sim 25\%$ of the unperturbed value. This transient state relaxes with a characteristic time of $\sim$ 1 ps, that is close to the decay time of the squared amplitude of the resonantly excited infrared-active $E_u^1$ mode. We discuss possible mechanisms of the dynamical splitting: nonlinear lattice deformation caused by the intense $E_u^1$ vibrations and excitation of anisotropic electronic distribution due to nonlinear electron-phonon interaction. Our data also contain an evidence in favor of the sum-frequency Raman mechanism of generation of the coherent $E_g^2$ phonons in Bi$_2$Se$_3$ excited by terahertz pulses.

cond-mat.mtrl-sci

Strain-driven nematicity of the odd-parity superconductivity in Sr$_x$Bi$_2$Se$_3$

We present a novel experimental evidence for the odd-parity nematic superconductivity in high-quality single crystals of doped topological insulator Sr$_x$Bi$_2$Se$_3$. The X-ray diffraction shows that the grown single crystals are either weakly stretched or compressed uniaxially in the basal plane along one of the crystal axis. We show that in the superconducting state, the upper critical magnetic field $H_{c2}$ has a two-fold rotational symmetry and depends on the sign of the strain: in the stretched samples, the maximum of $H_{c2}$ is achieved when the in-plane magnetic field is transverse to the strain axis, while in the compressed samples this maximum is observed when the field is along the strain direction. This result is naturally explained within a framework of the odd-parity nematic superconductivity coupled to the strain. Magnetoresistance in the normal state is independent of the current direction and also has a two-fold rotational symmetry that demonstrates the nematicity of the electronic system in the normal state.

cond-mat.supr-con

Effect of Sr doping on structure, morphology and transport properties of Bi$_2$Se$_3$ epitaxial thin films

We report molecular beam epitaxy growth of Sr-doped Bi$_2$Se$_3$ films on (111) BaF$_2$ substrate, aimed to realize unusual superconducting properties inherent to Sr$_x$Bi$_2$Se$_3$ single crystals. Despite wide range of the compositions, we do not achieve superconductivity. To explore the reason for that we study structural, morphological and electronic properties of the films and compare them to the corresponding properties of the single crystals. The dependence of the c-lattice constant in the films on Sr content appears to be more than an order of magnitude stronger than in the crystals. Correspondingly, all other properties also differ substantially, indicating that Sr atoms get different positions in lattices. We argue that these structural discrepancies come from essential differences in growth conditions. Our research calls for more detailed structural studies and novel growth approaches for design of superconducting Sr$_x$Bi$_2$Se$_3$ thin films.

cond-mat.mtrl-sci

Structural distortion behind the nematic superconductivity in Sr$_x$Bi$_2$Se$_3$

An archetypical layered topological insulator Bi$_2$Se$_3$ becomes superconductive upon doping with Sr, Nb or Cu. Superconducting properties of these materials in the presence of in-plane magnetic field demonstrate spontaneous symmetry breaking: 180$^\circ$-rotation symmetry of superconductivity versus 120$^\circ$-rotation symmetry of the crystal. Such behavior brilliantly confirms nematic topological superconductivity. To what extent this nematicity is due to superconducting pairing in these materials, rather than due to crystal structure distortions? This question remained unanswered, because so far no visible deviations from the 3-fold crystal symmetry were resolved in these materials. To address this question we grow high quality single crystals of Sr$_x$Bi$_2$Se$_3$, perform detailed X-ray diffraction and magnetotransport studies and reveal that the observed superconducting nematicity direction correlates with the direction of small structural distortions in these samples( $\sim 0.02$\% elongation in one crystallographic direction). Additional anisotropy comes from orientation of the crystallite axes. 2-fold symmetry of magnetoresistance observed in the most uniform crystals well above critical temperature demonstrates that these structural distortions are nevertheless strong enough. Our data in combination with strong sample-to-sample variation of the superconductive anisotropy parameter are indicative for significance of the structural factor in the apparent nematic superconductivity in Sr$_x$Bi$_2$Se$_3$.

cond-mat.supr-con

Coherent phonons in a $Bi_2Se_3$ film generated by an intense single-cycle THz pulse

We report an observation of coherent phonons of $E_g^1$, $E_u^1$, $A_{1g}^1$, and $E_g^2$ symmetry generated in a single-crystal film of $Bi_2Se_3$ by an intense single-cycle THz pulse. The atomic vibrations reveal themselves through periodic modulation of the refractive index of the film. The largest signal is detected at the frequency of 4.05 THz that corresponds to the $E_g^2$ mode. The generation of $E_g^2$ phonons is interpreted as resonant excitation of the Raman mode by the second harmonic of THz-driven nonlinear $E_u^1$ oscillator, the fundamental frequency of which (2.05 THz) is approximately half that of $E_g^2$. The origin of nonlinearity in this case is cubic lattice anharmonicity, while generation of $E_g^1$ (1.1 THz) and $A_{1g}^1$ (2.25 THz) phonons is a manifestation of quartic anharmonicity enhanced by the occasional combination relations between phonon frequencies in $Bi_2Se_3$.

cond-mat.mtrl-sci

Magnetic and magnetotransport properties of Bi$_2$Se$_3$ thin films doped by Eu

Structural, magnetic and magnetotransport properties of (Bi$_{1-x}$Eu$_x$)$_2$Se$_3$ thin films have been studied experimentally as a function of Eu content. The films were synthesized by MBE. It is demonstrated that Eu distribution is not uniform, it enter quint-layers forming inside them plain (pancake-like) areas containing Eu atoms, which sizes and concentration increase with the growth of Eu content. Positive magnetoresistance related to the weak antilocalization was observed up to 15K. The antilocalization was not followed by weak localization as theory predicts for nontrivial topological states. Surprisingly, the features of antilocalization were seen even at Eu content $x$ $=$ 0.21. With the increase of Eu content the transition to ferromagnetic state occurs at $x$ about 0.1 and with the Curie temperature $\approx$ 8K, that rises up to 64K for $x$ $=$ 0.21. At temperatures above 1-2 K, the dephasing length is proportional to $T^{-1/2}$ indicating the dominant contribution of inelastic $e-e$ scattering into electron phase breaking. However, at low temperatures the dephasing length saturates, that could be due to the scattering on magnetic ions.

cond-mat.mes-hall

Low temperature Hall effect in bismuth chalcogenides thin films

Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to resistivity decrease at low temperatures; in experiments, however, resistivity grows as temperature decreases. From transport measurements for several thin films (with various carrier density, thickness, and carrier mobility), and by using purely phenomenological approach, with no microscopic theory, we show that the low temperature growth of the resistivity is accompanied by growth of the Hall coefficient, in agreement with diffusive electron-electron interaction correction mechanism. Our data reasonably explain the low-temperature resistivity upturn.

cond-mat.mes-hall