Searcharxiv⌕ Search

arXiv subjects

Yuan Huang

Publications and source records attributed to Yuan Huang.

At least 91 records · Page 5Linked to original sources

Isospin competitions and valley polarized correlated insulators in twisted double bilayer graphene

New phase of matter usually emerges when a given symmetry breaks spontaneously, which can involve charge, spin, and valley degree of freedoms. Here, we report an observation of new correlated insulators evolved from spin polarized states to valley polarized states in AB-BA stacked twisted double bilayer graphene (TDBG). The transition of the isospin polarization is a result of the competition between spin and valley, driven by the displacement field (D). At a high field |D| > 0.7 V/nm, we observe valley polarized correlated insulators with a big Zeeman g factor of ~10, both at v = 2 in the moiré conduction band and more surprisingly at v = -2 in the moiré valence band. At a medium field |D| < 0.6 V/nm, by contrast, it is a conventional spin polarized correlated insulator at v = 2 and a featureless metal at v = -2. Moreover, we observe a valley polarized Chern insulator with C = 2 emanating at v = 2 in the electron side and a valley polarized Fermi surface around v = -2 in the hole side. The valley Chern insulator with C = 2 is evident from a well quantized Hall conductance plateau at 2e^2/h and correspondingly a vanishing longitudinal component. The valley polarized Fermi surface is topologically trivial with C = 0, and it shows a series of quantized Landau levels with v_LL = 0, 1, 2, 3, 4 and others. These observations are in good agreements with our band and topology calculations. Our results demonstrate a feasible way to realize isospin control and to obtain new phases of matter in TDBG by the displacement field, and might benefit other twisted or non-twisted multilayer systems.

cond-mat.mes-hall↗

Posture Adjustment for a Wheel-legged Robotic System via Leg Force Control with Prescribed Transient Performance

This work proposes a force control strategy with prescribed transient performance for the legs of a wheel-legged robotic system to realize the posture adjustment on uneven roads. A dynamic model of the robotic system is established with the body postures as inputs and the leg forces as outputs, such that the desired forces for the wheel-legs are calculated by the posture reference and feedback. Based on the funnel control scheme, the legs realize force tracking with prescribed transient performance. To improve the robustness of the force control system, an event-based mechanism is designed for the online segment of the funnel function. As a result, the force tracking error of the wheel-leg evolves inside the performance funnel with proved convergence. The absence of Zeno behavior for the event-triggering condition is also guaranteed. The proposed control scheme is applied to the wheel-legged physical prototype for the performance of force tracking and posture adjustment. Multiple comparative experimental results are presented to validate the stability and effectiveness of the proposed methodology.

cs.RO↗

Spatially separated superconductivity and enhanced charge-density-wave ordering in IrTe2 nano-flake

The interplay among various collective electronic states such as superconductivity (SC) and charge density wave (CDW) is of tremendous significance in low-dimensional transition metal dichalcogenides. Thus far, a consensus on the relationship between SC and CDW has not been established in IrTe2, where either competing or collaboration pictures have been suggested in the bulk or thick flakes. Here, we use the state-of-art Au-assisted exfoliation method to overcome the obstacle of interlayer Te-Te bonding, cleaving the IrTe2 down to monolayer for the first time. A striking feature revealed by angle-resolved polarized Raman spectroscopy (ARPRS) and electrical transport measurements is the concurrence of phase separation in one single piece of nano-flake, i.e. the superconducting (P-3m1) and CDW (P-3) area. In the pure SC area, the dimensional fluctuations completely suppress the CDW ordering and induce SC at 3.5 K. Meanwhile, the pure CDW area with much enhanced TCDW at 605 K (compared to TCDW = 280 K in bulk) is always accompanied by a unique wrinkle pattern. Detailed analyses suggest the local strain-induced bond breaking of the Te-Te dimer facilitates the emergence of the CDW order. Our works provide compelling evidence of competition between SC and CDW, highlighting the importance of microstructure in determining the ground states of IrTe2.

cond-mat.supr-con↗

Competition of superconductivity and charge density wave in selective oxidized CsV3Sb5 thin flakes

The recently discovered layered kagome metals AV$_3$Sb$_5$ (A = K, Rb, and Cs) with vanadium kagome networks provide a novel platform to explore correlated quantum states intertwined with topological band structures. Here we report the prominent effect of hole doping on both superconductivity and charge density wave (CDW) order, achieved by selective oxidation of exfoliated thin flakes. A superconducting dome is revealed as a function of the effective doping content. The superconducting transition temperature ($T_{\mathrm{c}}$) and upper critical field in thin flakes are significantly enhanced compared with the bulk, which is accompanied by the suppression of CDW. Our detailed analyses establish the pivotal role of van Hove singularities (VHSs) in promoting correlated quantum orders in these kagome metals. Our experiment not only demonstrates the intriguing nature of superconducting and CDW orders, but also provides a novel route to tune the carrier concentration through both selective oxidation and electric gating. This establishes AV$_3$Sb$_5$ as a tunable 2D platform for the further exploration of topology and correlation among 3$d$ electrons in kagome lattices.

cond-mat.supr-con↗

StructDepth: Leveraging the structural regularities for self-supervised indoor depth estimation

Self-supervised monocular depth estimation has achieved impressive performance on outdoor datasets. Its performance however degrades notably in indoor environments because of the lack of textures. Without rich textures, the photometric consistency is too weak to train a good depth network. Inspired by the early works on indoor modeling, we leverage the structural regularities exhibited in indoor scenes, to train a better depth network. Specifically, we adopt two extra supervisory signals for self-supervised training: 1) the Manhattan normal constraint and 2) the co-planar constraint. The Manhattan normal constraint enforces the major surfaces (the floor, ceiling, and walls) to be aligned with dominant directions. The co-planar constraint states that the 3D points be well fitted by a plane if they are located within the same planar region. To generate the supervisory signals, we adopt two components to classify the major surface normal into dominant directions and detect the planar regions on the fly during training. As the predicted depth becomes more accurate after more training epochs, the supervisory signals also improve and in turn feedback to obtain a better depth model. Through extensive experiments on indoor benchmark datasets, the results show that our network outperforms the state-of-the-art methods. The source code is available at https://github.com/SJTU-ViSYS/StructDepth .

cs.CV↗

Tunable terahertz plasmons in graphite thin films

Tunable terahertz plasmons are essential for reconfigurable photonics, which have been demonstrated in graphene through gating, though with relatively weak responses. Here, we demonstrate strong terahertz plasmons in graphite thin films via infrared spectroscopy, with dramatic tunability by even a moderate temperature change or an in-situ bias voltage. Meanwhile, through magneto-plasmon studies, we reveal that massive electrons and massless Dirac holes make comparable contributions to the plasmon response. Our study not only sets up a platform for further exploration of two-component plasmas, but also opens an avenue for terahertz modulation through electrical bias or all-optical means.

physics.optics↗

Atomically sharp interface enabled ultrahigh-speed, nonvolatile memory devices

Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however current major bottlenecks include low extinction ratio and slow operational speed. Although substantial effort has been employed to improve their performance, a typical hundreds of micro- or even milli- second write time remains a few orders of magnitude longer than their volatile counterparts. We have demonstrated nonvolatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, and achieved ultrahigh-speed programming/erasing operations verging on an ultimate theoretical limit of nanoseconds with extinction ratio up to 10^10. This extraordinary performance has allowed new device capabilities such as multi-bit storage, thus opening up unforeseen applications in the realm of modern nanoelectronics and offering future fabrication guidelines for device scale-up.

physics.app-ph↗

Direct identification of Mott Hubbard band pattern beyond charge density wave superlattice in monolayer 1T-NbSe2

Understanding Mott insulators and charge density waves (CDW) is critical for both fundamental physics and future device applications. However, the relationship between these two phenomena remains unclear, particularly in systems close to two-dimensional (2D) limit. In this study, we utilize scanning tunneling microscopy/spectroscopy to investigate monolayer 1T-NbSe2 to elucidate the energy of the Mott upper Hubbard band (UHB), and reveal that the spin-polarized UHB is spatially distributed away from the dz2 orbital at the center of the CDW unit. Moreover, the UHB shows a root3 x root3 R30° periodicity in addition to the typically observed CDW pattern. Furthermore, a pattern similar to the CDW order is visible deep in the Mott gap, exhibiting CDW without contribution of the Mott Hubbard band. Based on these findings in monolayer 1T-NbSe2, we provide novel insights into the relation between the correlated and collective electronic structures in monolayer 2D systems.

cond-mat.str-el↗

Genuine Electronic Structure and Superconducting Gap Structure in (Ba$_{0.6}$K$_{0.4}$)Fe$_{2}$As$_{2}$ Superconductor

The electronic structure and superconducting gap structure are prerequisites to establish microscopic theories in understanding the superconductivity mechanism of iron-based superconductors. However, even for the most extensively studied optimally-doped (Ba$_{0.6}$K$_{0.4}$)Fe$_2$As$_2$, there remain outstanding controversies on its electronic structure and superconducting gap structure. Here we resolve these issues by carrying out high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements on the optimally-doped (Ba$_{0.6}$K$_{0.4}$)Fe$_2$As$_2$ superconductor using both Helium lamp and laser light sources. Our results indicate the "flat band" feature observed around the Brillouin zone center in the superconducting state originates from the combined effect of the superconductivity-induced band back-bending and the folding of a band from the zone corner to the center. We found direct evidence of the band folding between the zone corner and the center in both the normal and superconducting state. Our resolution of the origin of the flat band makes it possible to assign the three hole-like bands around the zone center and determine their superconducting gap correctly. Around the zone corner, we observe a tiny electron-like band and an M-shaped band simultaneously in both the normal and superconducting states. The obtained gap size for the bands around the zone corner ($\sim$5.5 meV) is significantly smaller than all the previous ARPES measurements. Our results establish a new superconducting gap structure around the zone corner and resolve a number of prominent controversies concerning the electronic structure and superconducting gap structure in the optimally-doped (Ba$_{0.6}$K$_{0.4}$)Fe$_2$As$_2$. They provide new insights in examining and establishing theories in understanding superconductivity mechanism in iron-based superconductors.

cond-mat.supr-con↗

Beyond Fine-tuning: Classifying High Resolution Mammograms using Function-Preserving Transformations

The task of classifying mammograms is very challenging because the lesion is usually small in the high resolution image. The current state-of-the-art approaches for medical image classification rely on using the de-facto method for ConvNets - fine-tuning. However, there are fundamental differences between natural images and medical images, which based on existing evidence from the literature, limits the overall performance gain when designed with algorithmic approaches. In this paper, we propose to go beyond fine-tuning by introducing a novel framework called MorphHR, in which we highlight a new transfer learning scheme. The idea behind the proposed framework is to integrate function-preserving transformations, for any continuous non-linear activation neurons, to internally regularise the network for improving mammograms classification. The proposed solution offers two major advantages over the existing techniques. Firstly and unlike fine-tuning, the proposed approach allows for modifying not only the last few layers but also several of the first ones on a deep ConvNet. By doing this, we can design the network front to be suitable for learning domain specific features. Secondly, the proposed scheme is scalable to hardware. Therefore, one can fit high resolution images on standard GPU memory. We show that by using high resolution images, one prevents losing relevant information. We demonstrate, through numerical and visual experiments, that the proposed approach yields to a significant improvement in the classification performance over state-of-the-art techniques, and is indeed on a par with radiology experts. Moreover and for generalisation purposes, we show the effectiveness of the proposed learning scheme on another large dataset, the ChestX-ray14, surpassing current state-of-the-art techniques.

cs.CV↗

Spectroscopic Evidence of Superconductivity Pairing at 83 K in Single-Layer FeSe/SrTiO3 Films

Single-layer FeSe films grown on the SrTiO3 substrate (FeSe/STO) have attracted much attention because of their possible record-high superconducting critical temperature Tc and distinct electronic structures in iron-based superconductors. However, it has been under debate on how high its Tc can really reach due to the inconsistency of the results obtained from the transport, magnetic and spectroscopic measurements. Here we report spectroscopic evidence of superconductivity pairing at 83 K in single-layer FeSe/STO films. By preparing high-quality single-layer FeSe/STO films, we observe for the first time strong superconductivity-induced Bogoliubov back-bending bands that extend to rather high binding energy ~100 meV by high-resolution angle-resolved photoemission measurements. The Bogoliubov back-bending band provides a new definitive benchmark of superconductivity pairing that is directly observed up to 83 K in the single-layer FeSe/STO films. Moreover, we find that the superconductivity pairing state can be further divided into two temperature regions of 64-83 K and below 64 K. We propose the 64-83 K region may be attributed to superconductivity fluctuation while the region below 64 K corresponds to the realization of long-range superconducting phase coherence. These results indicate that either Tc as high as 83 K is achievable in iron-based superconductors, or there is a pseudogap formation from superconductivity fluctuation in single-layer FeSe/STO films.

cond-mat.supr-con↗

Evidence for bosonic mode coupling in electron dynamics of LiFeAs superconductor

Super-high resolution laser-based angle-resolved photoemission measurements are carried out on LiFeAs superconductor to investigate its electron dynamics. Three energy scales at $\sim$20 meV, $\sim$34 meV and $\sim$55 meV are revealed for the first time in the electron self-energy both in the superconducting state and normal state. The $\sim$20 meV and $\sim$34 meV scales can be attributed to the coupling of electrons with sharp bosonic modes which are most likely phonons. These observations provide definitive evidence on the existence of mode coupling in iron-based superconductors.

cond-mat.supr-con↗

A Bayesian Updating Scheme for Pandemics: Estimating the Infection Dynamics of COVID-19

Epidemic models play a key role in understanding and responding to the emerging COVID-19 pandemic. Widely used compartmental models are static and are of limited use to evaluate intervention strategies with the emerging pandemic. Applying the technology of data assimilation, we propose a Bayesian updating approach for estimating epidemiological parameters using observable information for the purpose of assessing the impacts of different intervention strategies. We adopt a concise renewal model and propose new parameters by disentangling the reduction of instantaneous reproduction number Rt into mitigation and suppression factors for quantifying intervention impacts at a finer granularity. Then we developed a data assimilation framework for estimating these parameters including constructing an observation function and developing a Bayesian updating scheme. A statistical analysis framework is then built to quantify the impact of intervention strategies by monitoring the evolution of these estimated parameters. By Investigating the impacts of intervention measures of European countries, the United States and Wuhan with the framework, we reveal the effects of interventions in these countries and the resurgence risk in the USA.

q-bio.PE↗

Electronic Evolution from the Parent Mott Insulator to a Superconductor in Lightly Hole-Doped Bi2Sr2CaCu2O8+delta

High temperature superconductivity in cuprates is realized by doping the Mott insulator with charge carriers. A central issue is how such an insulating state can evolve into a conducting or superconducting state when charge carriers are introduced. Here, by in situ vacuum annealing and Rb deposition on the Bi2Sr2Ca0.6Dy0.4Cu2O8+delta (Bi2212) sample surface to push its doping level continuously from deeply underdoped (Tc=25 K, doping level p-0.066) to the near zero doping parent Mott insulator, angle-resolved photoemission spectroscopy measurements are carried out to observe the detailed electronic structure evolution in lightly hole-doped region for the first time. Our results indicate that the chemical potential lies at about 1 eV above the charge transfer band for the parent state at zero doping which is quite close to the upper Hubbard band. With increasing hole doping, the chemical potential moves continuously towards the charge transfer band and the band structure evolution exhibits a rigid band shift-like behavior. When the chemical potential approaches the charge transfer band at a doping level of -0.05, the nodal spectral weight near the Fermi level increases, followed by the emergence of the coherent quasiparticle peak and the insulator-superconductor transition. Our observations provide key insights in understanding the insulator-superconductor transition in doping the parent cuprate compound and for establishing related theories.

cond-mat.supr-con↗

Noisy-As-Clean: Learning Self-supervised Denoising from the Corrupted Image

Supervised deep networks have achieved promisingperformance on image denoising, by learning image priors andnoise statistics on plenty pairs of noisy and clean images. Unsupervised denoising networks are trained with only noisy images. However, for an unseen corrupted image, both supervised andunsupervised networks ignore either its particular image prior, the noise statistics, or both. That is, the networks learned from external images inherently suffer from a domain gap problem: the image priors and noise statistics are very different between the training and test images. This problem becomes more clear when dealing with the signal dependent realistic noise. To circumvent this problem, in this work, we propose a novel "Noisy-As-Clean" (NAC) strategy of training self-supervised denoising networks. Specifically, the corrupted test image is directly taken as the "clean" target, while the inputs are synthetic images consisted of this corrupted image and a second and similar corruption. A simple but useful observation on our NAC is: as long as the noise is weak, it is feasible to learn a self-supervised network only with the corrupted image, approximating the optimal parameters of a supervised network learned with pairs of noisy and clean images. Experiments on synthetic and realistic noise removal demonstrate that, the DnCNN and ResNet networks trained with our self-supervised NAC strategy achieve comparable or better performance than the original ones and previous supervised/unsupervised/self-supervised networks. The code is publicly available at https://github.com/csjunxu/Noisy-As-Clean.

cs.CV↗

Simultaneous Generation of Direct- and Indirect-Gap Photoluminescence in Multilayer MoS2 Bubbles

Transition metal dichalcogenide (TMD) materials have received enormous attention due to their extraodinary optical and electrical properties, among which MoS2 is the most typical one. As thickness increases from monolayer to multilayer, the photoluminescence (PL) of MoS2 is gradually quenched due to the direct-to-indirect band gap transition. How to enhance PL response and decrease the layer dependence in multilayer MoS2 is still a challenging task. In this work, we report, for the first time, simultaneous generation of three PL peaks at around 1.3, 1.4 and 1.8 eV on multilayer MoS2 bubbles. The temperature dependent PL measurements indicate that the two peaks at 1.3 and 1.4 eV are phonon-assisted indirect-gap transitions while the peak at 1.8 eV is the direct-gap transition. Using first-principles calculations, the band structure evolution of multilayer MoS2 under strain is studied, from which the origin of the three PL peaks of MoS2 bubbles is further confirmed. Moreover, PL standing waves are observed in MoS2 bubbles that creates Newton-Ring-like patterns. This work demonstrates that the bubble structure may provide new opportunities for engineering the electronic structure and optical properties of layered materials.

cond-mat.mtrl-sci↗

Universal mechanical exfoliation of large-area 2D crystals

Two-dimensional (2D) materials provide extraordinary opportunities for exploring phenomena arising in atomically thin crystals. Beginning with the first isolation of graphene, mechanical exfoliation has been a key to provide high-quality 2D materials but despite improvements it is still limited in yield, lateral size and contamination. Here we introduce a contamination-free, one-step and universal Au-assisted mechanical exfoliation method and demonstrate its effectiveness by isolating 40 types of single-crystalline monolayers, including elemental 2D crystals, metal-dichalcogenides, magnets and superconductors. Most of them are of millimeter-size and high-quality, as shown by transfer-free measurements of electron microscopy, photo spectroscopies and electrical transport. Large suspended 2D crystals and heterojunctions were also prepared with high-yield. Enhanced adhesion between the crystals and the substrates enables such efficient exfoliation, for which we identify a common rule that underpins a universal route for producing large-area monolayers and thus supports studies of fundamental properties and potential application of 2D materials.

cond-mat.mes-hall↗

Direct Measurement of the Electronic Structure and band gap nature of atomic-layer-thick 2H-MoTe2

The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samples are prepared by a new mechanical exfoliation method. Based on such high-quality samples, we report the first direct electronic structure study on them, using standard high resolution angle-resolved photoemission spectroscopy (ARPES). A direct band gap of 0.924eV is found at K in the rubidium-doped monolayer MoTe2. Similar valence band alignment is also observed in bilayer MoTe2,supporting an assumption of a analogous direct gap semiconductor on it. Our measurements indicate a rather large band splitting of 212meV at the valence band maximum (VBM) in monolayer MoTe2, and the splitting is systematically enlarged with layer stacking, from monolayer to bilayer and to bulk. Meanwhile, our PBE band calculation on these materials show excellent agreement with ARPES results. Some fundamental electronic parameters are derived from the experimental and calculated electronic structures. Our findings lay a foundation for further application-related study on monolayer and bilayer MoTe2.

cond-mat.mtrl-sci↗