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Yuanjun Yang

Publications and source records attributed to Yuanjun Yang.

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Interface-Controlled Antiferromagnetic Tunnel Junctions based on a metallic van der Waals A-type Antiferromagnet

Magnetic tunnel junctions (MTJs) are crucial components in high-performance spintronic devices. Traditional MTJs rely on ferromagnetic (FM) materials but significant improvements in speed and packing density could be enabled by exploiting antiferromagnetic (AFM) compounds instead. Here, we report all-collinear AFM tunnel junctions (AFMTJs) fabricated with van der Waals A-type AFM metal (Fe0.6Co0.4)5GeTe2 (FCGT) electrodes and nonmagnetic semiconducting WSe2 tunnel barriers. The AFMTJ heterostructure device achieves a tunneling magnetoresistance (TMR) ratio of up to 75% in response to magnetic field switching. Our results demonstrate that the TMR exclusively emerges in the AFM state of FCGT, rather than during the AFM-to-FM transition. By engineering FCGT electrodes with either even- or odd-layer configurations, volatile or non-volatile TMR could be selected, consistent with an entirely interfacial effect. TMR in the even-layer devices arose by N\'eel vector switching. In the odd-layer devices, TMR stemmed from interfacial spin-flipping. Experimental and theoretical analyses reveal a new TMR mechanism associated with interface-driven spin-polarized transport, despite the spin-independent nature of bulk FCGT. Our work demonstrates that collinear AFMTJs can provide comparable performance to conventional MTJs and introduces a new paradigm for AFM spintronics, in which the spin-dependent properties of AFM interfaces are harnessed.

cond-mat.mes-hall

Electrically tunable, rapid spin-orbit torque induced modulation of colossal magnetoresistance in Mn$_3$Si$_2$Te$_6$ nanoflakes

As a quasi-layered ferrimagnetic material, Mn$_3$Si$_2$Te$_6$ nanoflakes exhibit magnetoresistance behaviour that is fundamentally different from their bulk crystal counterparts. They offer three key properties crucial for spintronics. Firstly, at least 10^6 times faster response comparing to that exhibited by bulk crystals has been observed in current-controlled resistance and magnetoresistance. Secondly, ultra-low current density is required for resistance modulation (~ 5 A/cm$^2$). Thirdly, electrically gate-tunable magnetoresistance has been realized. Theoretical calculations reveal that the unique magnetoresistance behaviour in the Mn$_3$Si$_2$Te$_6$ nanoflakes arises from a magnetic field induced band gap shift across the Fermi level. The rapid current induced resistance variation is attributed to spin-orbit torque, an intrinsically ultra-fast process (~nanoseconds). This study suggests promising avenues for spintronic applications. In addition, it highlights Mn$_3$Si$_2$Te$_6$ nanoflakes as a suitable platform for investigating the intriguing physics underlying chiral orbital moments, magnetic field induced band variation and spin torque.

cond-mat.mes-hall

Room temperature magnetic phase transition in an electrically-tuned van der Waals ferromagnet

Finding tunable van der Waals (vdW) ferromagnets that operate at above room temperature is an important research focus in physics and materials science. Most vdW magnets are only intrinsically magnetic far below room temperature and magnetism with square-shaped hysteresis at room-temperature has yet to be observed. Here, we report magnetism in a quasi-2D magnet Cr1.2Te2 observed at room temperature (290 K). This magnetism was tuned via a protonic gate with an electron doping concentration up to 3.8 * 10^21 cm^-3. We observed non-monotonic evolutions in both coercivity and anomalous Hall resistivity. Under increased electron doping, the coercivities and anomalous Hall effects (AHEs) vanished, indicating a doping-induced magnetic phase transition. This occurred up to room temperature. DFT calculations showed the formation of an antiferromagnetic (AFM) phase caused by the intercalation of protons which induced significant electron doping in the Cr1.2Te2. The tunability of the magnetic properties and phase in room temperature magnetic vdW Cr1.2Te2 is a significant step towards practical spintronic devices.

cond-mat.mtrl-sci

Spectral self-adaptive absorber/emitter for harvesting energy from the sun and outer space

The sun (~6000 K) and outer space (~3 K) are the original heat source and sink for human beings on Earth. The energy applications of absorbing solar irradiation and harvesting the coldness of outer space for energy utilization have attracted considerable interest from researchers. However, combining these two functions in a static device for continuous energy harvesting is unachievable due to the intrinsic infrared spectral conflict. In this study, we developed spectral self-adaptive absorber/emitter (SSA/E) for daytime photothermal and nighttime radiative sky cooling modes depending on the phase transition of the vanadium dioxide coated layer. A 24-hour day-night test showed that the fabricated SSA/E has continuous energy harvesting ability and improved overall energy utilization performance, thus showing remarkable potential in future energy applications.

cond-mat.mtrl-sci

Periodic elastic nanodomains in ultrathin tetrogonal-like BiFeO3 films

We present a synchrotron grazing incidence x-ray diffraction analysis of the domain structure and polar symmetry of highly strained BiFeO3 thin films grown on LaAlO3 substrate. We revealed the existence of periodic elastic nanodomains in the pure tetragonal-like BFO ultrathin films down to a thickness of 6 nm. A unique shear strain accommodation mechanism is disclosed. We further demonstrated that the periodicity of the nanodomains increases with film thickness but deviates from the classical Kittel's square root law in ultrathin thickness regime (6 - 30 nm). Temperature-dependent experiments also reveal the disappearance of periodic modulation above 90C due to a MC-MA structural phase transition.

cond-mat.mtrl-sci