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arXiv · 2403.16684

Electrically tunable, rapid spin-orbit torque induced modulation of colossal magnetoresistance in Mn$_3$Si$_2$Te$_6$ nanoflakes

Cheng Tan·Mingxun Deng·Yuanjun Yang·Linlin An·Weifeng Ge·Sultan Albarakati·Majid Panahandeh-Fard·James Partridge·Dimitrie Culcer·Bin Lei·Tao Wu·Xiangde Zhu·Mingliang Tian·Xianhui Chen·Rui-Qiang Wang·Lan Wang
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Abstract

As a quasi-layered ferrimagnetic material, Mn$_3$Si$_2$Te$_6$ nanoflakes exhibit magnetoresistance behaviour that is fundamentally different from their bulk crystal counterparts. They offer three key properties crucial for spintronics. Firstly, at least 10^6 times faster response comparing to that exhibited by bulk crystals has been observed in current-controlled resistance and magnetoresistance. Secondly, ultra-low current density is required for resistance modulation (~ 5 A/cm$^2$). Thirdly, electrically gate-tunable magnetoresistance has been realized. Theoretical calculations reveal that the unique magnetoresistance behaviour in the Mn$_3$Si$_2$Te$_6$ nanoflakes arises from a magnetic field induced band gap shift across the Fermi level. The rapid current induced resistance variation is attributed to spin-orbit torque, an intrinsically ultra-fast process (~nanoseconds). This study suggests promising avenues for spintronic applications. In addition, it highlights Mn$_3$Si$_2$Te$_6$ nanoflakes as a suitable platform for investigating the intriguing physics underlying chiral orbital moments, magnetic field induced band variation and spin torque.

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Cheng Tan, Mingxun Deng, Yuanjun Yang, Linlin An, Weifeng Ge, Sultan Albarakati, Majid Panahandeh-Fard, James Partridge, Dimitrie Culcer, Bin Lei, Tao Wu, Xiangde Zhu, Mingliang Tian, Xianhui Chen, Rui-Qiang Wang, Lan Wang. 2024-03-25. Electrically tunable, rapid spin-orbit torque induced modulation of colossal magnetoresistance in Mn$_3$Si$_2$Te$_6$ nanoflakes. https://doi.org/10.1021/acs.nanolett.4c00054

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