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Yuchao Yang

Publications and source records attributed to Yuchao Yang.

21 records · Page 2Linked to original sources

S3-Net: A Fast and Lightweight Video Scene Understanding Network by Single-shot Segmentation

Real-time understanding in video is crucial in various AI applications such as autonomous driving. This work presents a fast single-shot segmentation strategy for video scene understanding. The proposed net, called S3-Net, quickly locates and segments target sub-scenes, meanwhile extracts structured time-series semantic features as inputs to an LSTM-based spatio-temporal model. Utilizing tensorization and quantization techniques, S3-Net is intended to be lightweight for edge computing. Experiments using CityScapes, UCF11, HMDB51 and MOMENTS datasets demonstrate that the proposed S3-Net achieves an accuracy improvement of 8.1% versus the 3D-CNN based approach on UCF11, a storage reduction of 6.9x and an inference speed of 22.8 FPS on CityScapes with a GTX1080Ti GPU.

cs.CV↗

The 1st Tiny Object Detection Challenge:Methods and Results

The 1st Tiny Object Detection (TOD) Challenge aims to encourage research in developing novel and accurate methods for tiny object detection in images which have wide views, with a current focus on tiny person detection. The TinyPerson dataset was used for the TOD Challenge and is publicly released. It has 1610 images and 72651 box-levelannotations. Around 36 participating teams from the globe competed inthe 1st TOD Challenge. In this paper, we provide a brief summary of the1st TOD Challenge including brief introductions to the top three methods.The submission leaderboard will be reopened for researchers that areinterested in the TOD challenge. The benchmark dataset and other information can be found at: https://github.com/ucas-vg/TinyBenchmark.

cs.CV↗

Complementary Resistive Switching in Tantalum Oxide-Based Resistive Memory Devices

Complementary resistive switches (CRS) are considered as a potential solution for the sneak path problem in large-scale integration of passive crossbar resistive memory arrays. A typical CRS is composed of two bipolar memory cells that are connected anti-serially. Here we report a tantalum-oxide based resistive memory that achieves the complementary switching functionality within a single memory cell. The complementary switching effect is accompanied by switching polarity reversal in different voltage bias regimes. These effects were explained by the redistribution of oxygen vacancies inside the tantalum-oxide layers. The effects of symmetry breaking on bipolar switching and complementary switching were also discussed.

cond-mat.mtrl-sci↗