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Yuheng He

Publications and source records attributed to Yuheng He.

16 recordsLinked to original sources

Masala-CHAI: A Large-Scale SPICE Netlist Dataset for Analog Circuits by Harnessing AI

Masala-CHAI is a fully automated framework leveraging large language models (LLMs) to generate Simulation Programs with Integrated Circuit Emphasis (SPICE) netlists. It addresses a long-standing challenge in circuit design automation: automating netlist generation for analog circuits. Automating this workflow could accelerate the creation of fine-tuned LLMs for analog circuit design and verification. In this work, we identify key challenges in automated netlist generation and evaluate multimodal capabilities of state-of-the-art LLMs, particularly GPT-4, in addressing them. We propose a three-step workflow to overcome existing limitations: labeling analog circuits, prompt tuning, and netlist verification. This approach enables end-to-end SPICE netlist generation from circuit schematic images, tackling the persistent challenge of accurate netlist generation. We utilize Masala-CHAI to collect a corpus of 7,500 schematics that span varying complexities in 10 textbooks and benchmark various open source and proprietary LLMs. Models fine-tuned on Masala-CHAI when used in LLM-agentic frameworks such as AnalogCoder achieve a notable 46% improvement in Pass@1 scores. We open-source our dataset and code for community-driven development.

cs.AR

Covariance Regression with High-Dimensional Predictors

In the high-dimensional landscape, addressing the challenges of covariance regression with high-dimensional covariates has posed difficulties for conventional methodologies. This paper addresses these hurdles by presenting a novel approach for high-dimensional inference with covariance matrix outcomes. The proposed methodology is illustrated through its application in elucidating brain coactivation patterns observed in functional magnetic resonance imaging (fMRI) experiments and unraveling complex associations within anatomical connections between brain regions identified through diffusion tensor imaging (DTI). In the pursuit of dependable statistical inference, we introduce an integrative approach based on penalized estimation. This approach combines data splitting, variable selection, aggregation of low-dimensional estimators, and robust variance estimation. It enables the construction of reliable confidence intervals for covariate coefficients, supported by theoretical confidence levels under specified conditions, where asymptotic distributions are provided. Through various types of simulation studies, the proposed approach performs well for covariance regression in the presence of high-dimensional covariates. This innovative approach is applied to the Lifespan Human Connectome Project (HCP) Aging Study, which aims to uncover a typical aging trajectory and variations in the brain connectome among mature and older adults. The proposed approach effectively identifies brain networks and associated predictors of white matter integrity, aligning with established knowledge of the human brain.

stat.ME

Lambda: Learning Matchable Prior For Entity Alignment with Unlabeled Dangling Cases

We investigate the entity alignment (EA) problem with unlabeled dangling cases, meaning that partial entities have no counterparts in the other knowledge graph (KG), and this type of entity remains unlabeled. To address this challenge, we propose the framework \textit{Lambda} for dangling detection and then entity alignment. Lambda features a GNN-based encoder called KEESA with spectral contrastive learning for EA and a positive-unlabeled learning algorithm for dangling detection called iPULE. iPULE offers theoretical guarantees of unbiasedness, uniform deviation bounds, and convergence. Experimental results demonstrate that each component contributes to overall performances that are superior to baselines, even when baselines additionally exploit 30\% of dangling entities labeled for training.

cs.CL

Moderate Deviations of Hitting Times for Trajectories of Sums of Independent and Identically Distributed Random Variables

In this paper we establish a moderate deviation principle of the hitting times for trajectories of sums of independent and identically distributed random variables. The main idea of proof is to convert the moderate deviations over a small time interval into the moderate deviations at a point, then utilize the moderate deviations for trajectories of sums of independent random variables given by Hu in \cite{Hu2001} to get the moderate deviations at a point. By the upper bounds of large deviations for trajectories of sums of independent random variables given by Schuette in \cite{ Schuette1994}, we can prove that our convert doesn't influence the rate function of the moderate deviation.

math.PR

Moderate deviations of hitting times of a family of density-dependent Markov chains

In this paper we are concerned with hitting times of a family of density-dependent Markov chains. A moderate deviation principle of the hitting time is given. The proof of the main theorem relies heavily on moderate deviations of density-dependent Markov chains given in \cite{Xue2021} and upper bounds of large deviations of Markov processes given in \cite{Dupuis1991}. An analogue moderate deviation of the hitting time of the diffusion approximation of the density-dependent Markov chain introduced in \cite{Ethier1986} is also given.

math.PR

Line Marching Algorithm For Planar Kinematic Swarm Robots: A Dynamic Leader-Follower Approach

Most of the existing formation algorithms for multiagent systems are fully label-specified, i.e., the desired position for each agent in the formation is uniquely determined by its label, which would inevitably make the formation algorithms vulnerable to agent failures. To address this issue, in this paper, we propose a dynamic leader-follower approach to solving the line marching problem for a swarm of planar kinematic robots. In contrast to the existing results, the desired positions for the robots in the line are not fully label-specified, but determined in a dynamic way according to the current state of the robot swarm. By constantly forming a chain of leader-follower pairs, exact formation can be achieved by pairwise leader-following tracking. Since the order of the chain of leader-follower pairs is constantly updated, the proposed algorithm shows strong robustness against robot failures. Comprehensive numerical results are provided to evaluate the performance of the proposed algorithm.

cs.RO

Probing strong interactions in p-type few-layer WSe$_2$ by density-dependent Landau level crossing

Atomically thin transition metal dichalcogenides (TMDCs) such as MoS$_2$ and WSe$_2$ are emerging as a new platform for exploring many-body effects. Coulomb interactions are markedly enhanced in these materials because of the reduced screening and the large Wigner-Seitz radii. Although many-body excitonic effects in TMDCs have been extensively studied by optical means, not until recently did probing their strongly correlated electronic effects become possible in transport. Here, in p-type few-layer WSe$_2$ we observe highly density-dependent quantum Hall states of Γ valley holes below 12 T, whose predominant sequences alternate between odd- and even-integers. By tilting the magnetic field to induce Landau level crossings, we show that the strong Coulomb interaction enhances the Zeeman-to-cyclotron energy ratio from 2.67 to 3.55 as the density is reduced from 5.7 to 4.0$\times$10$^{12}$ cm$^{-2}$, giving rise to the even-odd alternation. Unprecedentedly, this indicates a 4.8 times enhancement of the g-factor over its band theory value at a density as high as 4.0$\times$10$^{12}$ cm$^{-2}$. Our findings unambiguously demonstrate that p-type few-layer WSe$_2$ is a superior platform for exploring strongly correlated electronic phenomena, opening a new perspective for realizing the elusive Wigner crystallization at a moderate density.

cond-mat.mes-hall

Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2

We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level (LL) crossing effects at ultra-low coincident angles, revealing that the Zeeman energy is about three times as large as the cyclotron energy near the valence band top at Γ valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe2, in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe2 offers a unique platform with unusually heavy hole-carriers and a substantially enhanced g-factor for exploring strongly correlated phenomena.

cond-mat.mes-hall

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron nitride encapsulated TMDC devices based on selective etching and conventional electron-beam evaporation of metal electrodes. This method works for most extensively studied TMDCs in recent years, including MoS2, MoSe2, WSe2, WS2, and 2H-MoTe2. Low electrical contact resistance is achieved at 2 K. All of the few-layer TMDC devices studied show excellent performance with remarkably improved field-effect mobilities ranging from 2300 cm2/V s to 16000 cm2/V s, as verified by the high carrier mobilities extracted from Hall effect measurements. Moreover, both high-mobility n-type and p-type TMDC channels can be realized by simply using appropriate contact metals. Prominent Shubnikov-de Haas oscillations have been observed and investigated in these high-quality TMDC devices.

cond-mat.mtrl-sci

Probing the Electronic States in Black Phosphorus Vertical Heterostructures

Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap structures. However, the charge-carrier mobility in few-layer phosphorene (monolayer BP) is mainly limited by the presence of impurity and disorders. In this study, we demonstrate that vertical BP heterostructure devices offer great advantages in probing the electron states of monolayer and few-layer phosphorene at temperatures down to 2 K through capacitance spectroscopy. Electronic states in the conduction and valence bands of phosphorene are accessible over a wide range of temperature and frequency. Exponential band tails have been determined to be related to disorders. Unusual phenomena such as the large temperature-dependence of the electron state population in few-layer phosphorene have been observed and systematically studied. By combining the first-principles calculation, we identified that the thermal excitation of charge trap states and oxidation-induced defect states were the main reasons for this large temperature dependence of the electron state population and degradation of the on-off ratio in phosphorene field-effect transistors.

cond-mat.mtrl-sci

Observation of Valley Zeeman and Quantum Hall Effects at Q Valley of Few-Layer Transition Metal Disulfides

In few-layer (FL) transition metal dichalcogenides (TMDC), the conduction bands along the Gamma-K directions shift downward energetically in the presence of interlayer interactions, forming six Q valleys related by three-fold rotational symmetry and time reversal symmetry. In even-layers the extra inversion symmetry requires all states to be Kramers degenerate, whereas in odd-layers the intrinsic inversion asymmetry dictates the Q valleys to be spin-valley coupled. In this Letter, we report the transport characterization of prominent Shubnikov-de Hass (SdH) oscillations for the Q valley electrons in FL transition metal disulfide (TMDs), as well as the first quantum Hall effect (QHE) in TMDCs. Our devices exhibit ultrahigh field-effect mobilities (~16,000 cm2V-1s-1 for FL WS2 and ~10,500 cm2V-1s-1 for FL MoS2) at cryogenic temperatures. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMD devices and a spin Zeeman effect in all even-layer TMD devices.

cond-mat.mes-hall

Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures

Negative compressibility generated by many-body effects in 2D electronic systems can enhance gate capacitance. We observe capacitance enhancement in a newly emerged 2D layered material, atomically thin black phosphorus (BP). The encapsulation of BP by hexagonal boron nitride sheets with few-layer graphene as a terminal ensures ultraclean heterostructure interfaces, allowing us to observe negative compressibility at low hole carrier concentrations. We explained the negative compressibility based on the Coulomb correlation among in-plane charges and their image charges in a gate electrode in the framework of Debye screening.

cond-mat.mes-hall

High quality sandwiched black phosphorus heterostructure and its quantum oscillations

Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides have attracted great attention because of the rich physics and potential applications in next-generation nano-sized electronic devices. Recently, atomically thin black phosphorus (BP) has become a new member of the 2D materials family with high theoretical mobility and tunable bandgap structure. However, degradation of properties under atmospheric conditions and high-density charge traps in BP have largely limited its mobility (~400 cm2/Vs at room temperature) and thus restricted its future applications. Here, we report the fabrication of stable BN-BP-BN heterostructures by encapsulating atomically thin BP between hexagonal boron nitride (BN) layers to realize ultraclean BN-BP interfaces which allow a record-high field-effect mobility ~1350 cm2/Vs at room temperature and on-off ratios over 10^5. At low temperatures, the mobility reaches ~2700 cm2/Vs and quantum oscillations in BP 2D hole gas are observed at low magnetic fields. Importantly, the BN-BP-BN heterostructure can effectively avoid the quality degradation of BP in ambient condition.

cond-mat.mtrl-sci

Detection of Interlayer Interaction in Few-layer Graphene through Landau Level Spectroscopy

We demonstrate that surface relaxation, which is insignificant in trilayer graphene, starts to manifest in Bernal-stacked tetralayer graphene. Bernal-stacked few-layer graphene has been investigated by analyzing its Landau level spectra through quantum capacitance measurements. We find that in trilayer graphene, the interlayer interaction parameters were similar to that of graphite. However, in tetralayer graphene, the hopping parameters between the bulk and surface bilayers are quite different. This shows a direct evidence for the surface relaxation phenomena. In spite of the fact that the Van der Waals interaction between the carbon layers is thought to be insignificant, we suggest that the interlayer interaction is an important factor in explaining the observed results and the symmetry-breaking effects in graphene sublattice are not negligible.

cond-mat.mtrl-sci

High-Quality BN-Graphene-BN Nanoribbon Capacitors Modulated by Graphene Side-gate Electrodes

High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene are experimentally realized. Graphene electronic properties can be significantly modulated by the double side-gates. The modulation effects are very obvious and followed the metallic electrode behavior of numerical simulations, while the theoretically predicted negative quantum capacitance was not observed, possibility due to the over-estimated or weakened interactions between the graphene nanoribbon and side-gate electrodes.

cond-mat.mes-hall

Probing the Electron States and Metal-Insulator Transition Mechanisms in Atomically Thin MoS2 Based on Vertical Heterostructures

The metal-insulator transition (MIT) is one of the remarkable electrical transport properties of atomically thin molybdenum disulphide (MoS2). Although the theory of electron-electron interactions has been used in modeling the MIT phenomena in MoS2, the underlying mechanism and detailed MIT process still remain largely unexplored. Here, we demonstrate that the vertical metal-insulator-semiconductor (MIS) heterostructures built from atomically thin MoS2 (monolayers and multilayers) are ideal capacitor structures for probing the electron states in MoS2. The vertical configuration of MIS heterostructures offers the added advantage of eliminating the influence of large impedance at the band tails and allows the observation of fully excited electron states near the surface of MoS2 over a wide excitation frequency (100 Hz-1 MHz) and temperature range (2 K- 300 K). By combining capacitance and transport measurements, we have observed a percolation-type MIT, driven by density inhomogeneities of electron states, in the vertical heterostructures built from monolayer and multilayer MoS2. In addition, the valence band of thin MoS2 layers and their intrinsic properties such as thickness-dependence screening abilities and band gap widths can be easily accessed and precisely determined through the vertical heterostructures.

cond-mat.mtrl-sci