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arXiv · 1412.1357

High quality sandwiched black phosphorus heterostructure and its quantum oscillations

Xiaolong Chen·Yingying Wu·Zefei Wu·Shuigang Xu·Lin Wang·Yu Han·Weiguang Ye·Tianyi Han·Yuheng He·Yuan Cai·Ning Wang
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Abstract

Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides have attracted great attention because of the rich physics and potential applications in next-generation nano-sized electronic devices. Recently, atomically thin black phosphorus (BP) has become a new member of the 2D materials family with high theoretical mobility and tunable bandgap structure. However, degradation of properties under atmospheric conditions and high-density charge traps in BP have largely limited its mobility (~400 cm2/Vs at room temperature) and thus restricted its future applications. Here, we report the fabrication of stable BN-BP-BN heterostructures by encapsulating atomically thin BP between hexagonal boron nitride (BN) layers to realize ultraclean BN-BP interfaces which allow a record-high field-effect mobility ~1350 cm2/Vs at room temperature and on-off ratios over 10^5. At low temperatures, the mobility reaches ~2700 cm2/Vs and quantum oscillations in BP 2D hole gas are observed at low magnetic fields. Importantly, the BN-BP-BN heterostructure can effectively avoid the quality degradation of BP in ambient condition.

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Xiaolong Chen, Yingying Wu, Zefei Wu, Shuigang Xu, Lin Wang, Yu Han, Weiguang Ye, Tianyi Han, Yuheng He, Yuan Cai, Ning Wang. 2014-12-03. High quality sandwiched black phosphorus heterostructure and its quantum oscillations. https://doi.org/10.1038/ncomms8315

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