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Yuji Saitoh

Publications and source records attributed to Yuji Saitoh.

At least 19 recordsLinked to original sources

Magnetoelastic anisotropy in Heusler-type Mn$_{2-\delta}$CoGa$_{1+\delta}$ films

Perpendicular magnetization is essential for high-density memory application using magnetic materials. High-spin polarization of conduction electrons is also required for realizing large electric signals from spin-dependent transport phenomena. Heusler alloy is a well-known material class showing the half-metallic electronic structure. However, its cubic lattice nature favors in-plane magnetization and thus minimizes the perpendicular magnetic anisotropy (PMA), in general. This study focuses on an inverse-type Heusler alloy, Mn$_{2-\delta}$CoGa$_{1+\delta}$ (MCG) with a small off-stoichiometry ($\delta$) , which is expected to be a half-metallic material. We observed relatively large uniaxial magnetocrystalline anisotropy constant ($K_\mathrm{u}$) of the order of 10$^5$ J/m$^3$ at room temperature in MCG films with a small tetragonal distortion of a few percent. A positive correlation was confirmed between the $c/a$ ratio of lattice constants and $K_\mathrm{u}$. Imaging of magnetic domains using Kerr microscopy clearly demonstrated a change in the domain patterns along with $K_\mathrm{u}$. X-ray magnetic circular dichroism (XMCD) was employed using synchrotron radiation soft x-ray beam to get insight into the origin for PMA. Negligible angular variation of orbital magnetic moment ($\Delta m_\mathrm{orb}$) evaluated using the XMCD spectra suggested a minor role of the so-called Bruno's term to $K_\mathrm{u}$. Our first principles calculation reasonably explained the small $\Delta m_\mathrm{orb}$ and the positive correlation between the $c/a$ ratio and $K_\mathrm{u}$. The origin of the magnetocrystalline anisotropy was discussed based on the second-order perturbation theory in terms of the spin--orbit coupling, claiming that the mixing of the occupied $\uparrow$- and the unoccupied $\downarrow$-spin states is responsible for the PMA of the MCG films.

cond-mat.mtrl-sci

Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb

We have studied the magnetization process of the new insulating ferromagnetic semiconductor (Al,Fe)Sb by means of x-ray magnetic circular dichroism. For an optimally doped sample with 10% Fe, a magnetization was found to rapidly increase at low magnetic fields and to saturate at high magnetic fields at room temperature, well above the Curie temperature of 40 K. We attribute this behavior to the existence of nanoscale Fe-rich ferromagnetic domains acting as superparamagnets. By fitting the magnetization curves using the Langevin function representing superparamagnetism plus the paramagnetic linear function, we estimated the average magnetic moment of the nanoscale ferromagnetic domain to be 300-400 $μ_{B}$, and the fraction of Fe atoms participating in the nano-scale ferromagnetism to be $\sim$50%. Such behavior was also reported for (In,Fe)As:Be and Ge:Fe, and seems to be a universal characteristic of the Fe-doped ferromagnetic semiconductors. Further Fe doping up to 14% led to the weakening of the ferromagnetism probably because antiferromagnetic superexchange interaction between nearest-neighbor Fe-Fe pairs becomes dominant.

cond-mat.str-el

Manifestation of electron correlation effect in $\mathrm{U}~5f$ states of uranium compounds revealed by $\mathrm{U}~4d-5f$ resonant photoemission spectroscopy

We have elucidated the nature of the electron correlation effect in uranium compounds by imaging the partial $\mathrm{U}~5f$ density of states (pDOS) of typical itinerant, localized, and heavy fermion uranium compounds by using the $\mathrm{U}~4d-5f$ resonant photoemission spectroscopy. Obtained $\mathrm{U}~5f$ pDOS exhibit a systematic trend depending on the physical properties of compounds. The coherent peak at the Fermi level can be described by the band-structure calculation, but an incoherent peak emerges on the higher binding energy side ($\lesssim 1~\mathrm{eV}$) in the \Uf pDOS of localized and heavy fermion compounds. As the $\mathrm{U}~5f$ state is more localized, the intensity of the incoherent peak is enhanced and its energy position is shifted to higher binding energy. These behaviors are consistent with the prediction of the Mott metal-insulator transition, suggesting that the Hubbard-$U$ type mechanism takes an essential role in the $5f$ electronic structure of actinide materials.

cond-mat.str-el

Electronic structure of the novel high-$T_{\rm C}$ ferromagnetic semiconductor (Ga,Fe)Sb: x-ray magnetic circular dichroism and resonance photoemission spectroscopy studies

The electronic structure and the magnetism of the novel ferromagnetic semiconductor (Ga,Fe)Sb, whose Curie temperature $T_{\rm C}$ can exceed room temperature, were investigated by means of x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and resonance photoemission spectroscopy (RPES). The line-shape analyses of the XAS and XMCD spectra suggest that the ferromagnetism is of intrinsic origin. The orbital magnetic moments deduced using XMCD sum rules were found to be large, indicating that there is a considerable amount of 3$d^{6}$ contribution to the ground state of Fe. From RPES, we observed a strong dispersive Auger peak and non-dispersive resonantly enhanced peaks in the valence-band spectra. The latter is a fingerprint of the correlated nature of Fe 3$d$ electrons, whereas the former indicates their itinerant nature. It was also found that the Fe 3$d$ states have finite contribution to the DOS at the Fermi energy. These states presumably consisting of majority-spin $p$-$d$ hybridized states or minority-spin $e$ states would be responsible for the ferromagnetic order in this material.

cond-mat.str-el

Local Magnetic States of the Weakly Ferromagnetic Iron-Based Superconductor Sr$_2$VFeAsO$_{3-δ}$ Studied by X-ray Magnetic Circular Dichroism

We have performed x-ray magnetic circular dichroism (XMCD) measurements on the iron-based superconductor Sr$_2$VFeAsO$_{3-δ}$ to study the origin of weak ferromagnetism (WFM) reported for this compound. While Fe 3$d$ electrons show a magnetic response similar to the other iron pnictides, signals from V 3$d$ electrons remain finite at zero magnetic field and may be responsible for the WFM.

cond-mat.str-el

Systematic study of the electronic structure and the magnetic properties of a few-nm-thick epitaxial (Ni1-xCox)Fe2O4 (x = 0 - 1) layers grown on Al2O3(111)/Si(111) using soft X-ray magnetic circular dichroism: effects of cation distribution

We study the electronic structure and the magnetic properties of epitaxial (Ni1-xCox)Fe2O4(111) layers (x = 0 - 1) with thicknesses d = 1.7 - 5.2 nm grown on Al2O3(111)/Si(111) structures, to achieve a high value of inversion parameter y, which is the inverse-to-normal spinel-structure ratio, and hence to obtain good magnetic properties even when the thickness is thin enough for electron tunneling as a spin filter. We revealed the crystallographic (octahedral Oh or tetrahedral Td) sites and the valences of the Fe, Co, and Ni cations using experimental soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism spectra and configuration-interaction cluster-model calculation. In all the (Ni1-xCox)Fe2O4 layers with d = about 4 nm, all Ni cations occupy the Ni2+ (Oh) site, whereas Co cations occupy the three different Co2+ (Oh), Co2+ (Td), and Co3+ (Oh) sites with constant occupancies. According to these features, the occupancy of the Fe3+ (Oh) cations decreases and that of the Fe3+ (Td) cations increases with decreasing x. Consequently, we obtained a systematic increase of y with decreasing x and achieved the highest y value of 0.91 for the NiFe2O4 layer with d = 3.5 nm. From the d dependences of y and magnetization in the d range of 1.7 - 5.2 nm, a magnetically dead layer is present near the NiFe2O4/Al2O3 interface, but its influence on the magnetization was significantly suppressed compared with the case of CoFe2O4 layers reported previously [Y. K. Wakabayasi et al., Phys. Rev. B 96, 104410 (2017)], due to the high site selectivity of the Ni cations. Since our epitaxial NiFe2O4 layer with d = 3.5 nm has a high y values (0.91) and a reasonably large magnetization (180 emu/cc), it is expected to exhibit a strong spin filter effect, which can be used for efficient spin injection into Si.

cond-mat.mtrl-sci

Electronic structures of UX$_3$ (X=Al, Ga, and In) studied by photoelectron spectroscopy

The electronic structures of UX$_3$ (X=Al, Ga, and In) were studied by photoelectron spectroscopy to understand the relationship between their electronic structures and magnetic properties. The band structures and Fermi surfaces of UAl$_3$ and UGa$_3$ were revealed experimentally by angle-resolved photoelectron spectroscopy (ARPES), and they were compared with the result of band-structure calculations. The topologies of the Fermi surfaces and the band structures of UAl$_3$ and UGa$_3$ were explained reasonably well by the calculation, although bands near the Fermi level ($E_\mathrm{F}$) were renormalized owing to the finite electron correlation effect. The topologies of the Fermi surfaces of UAl$_3$ and UGa$_3$ are very similar to each other, except for some minor differences. Such minor differences in their Fermi surface or electron correlation effect might take an essential role in their different magnetic properties. No significant changes were observed between the ARPES spectra of UGa$_3$ in the paramagnetic and antiferromagnetic phases, suggesting that UGa$_3$ is an itinerant weak antiferromagnet. The effect of chemical pressure on the electronic structures of UX$_3$ compounds was also studied by utilizing the smaller lattice constants of UAl$_3$ and UGa$_3$ than that of UIn$_3$. The valence band spectrum of UIn$_3$ is accompanied by a satellite-like structure on the high-binding-energy side. The core-level spectrum of UIn$_3$ is also qualitatively different from those of UAl$_3$ and UGa$_3$. These findings suggest that the U~$5f$ states in UIn$_3$ are more localized than those in UAl$_3$ and UGa$_3$.

cond-mat.str-el

Electronic structure of ThRu2Si2 studied by angle-resolved photoelectron spectroscopy: Elucidating the contribution of U 5f states in URu2Si2

The electronic structure of ThRu2Si2 was studied by angle-resolved photoelectron spectroscopy (ARPES) with incident photon energies of hn=655-745 eV. Detailed band structure and the three-dimensional shapes of Fermi surfaces were derived experimentally, and their characteristic features were mostly explained by means of band structure calculations based on the density functional theory. Comparison of the experimental ARPES spectra of ThRu2Si2 with those of URu2Si2 shows that they have considerably different spectral profiles particularly in the energy range of 1 eV from the Fermi level, suggesting that U 5f states are substantially hybridized in these bands. The relationship between the ARPES spectra of URu2Si2 and ThRu2Si2 is very different from the one between the ARPES spectra of CeRu2Si2 and LaRu2Si2, where the intrinsic difference in their spectra is limited only in the very vicinity of the Fermi energy. The present result suggests that the U 5f electrons in URu2Si2 have strong hybridization with ligand states and have an essentially itinerant character.

cond-mat.str-el

Electronic structure and magnetic properties of magnetically dead layers in epitaxial CoFe2O4/Al2O3/Si(111) films studied by X-ray magnetic circular dichroism

Epitaxial CoFe2O4/Al2O3 bilayers are expected to be highly efficient spin injectors into Si owing to the spin filter effect of CoFe2O4. To exploit the full potential of this system, understanding the microscopic origin of magnetically dead layers at the CoFe2O4/Al2O3 interface is necessary. In this paper, we study the crystallographic and electronic structures and the magnetic properties of CoFe2O4(111) layers with various thicknesses (thickness d = 1.4, 2.3, 4, and 11 nm) in the epitaxial CoFe2O4(111)/Al2O3(111)/Si(111) structures using soft X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) combined with cluster-model calculation. The magnetization of CoFe2O4 measured by XMCD gradually decreases with decreasing thickness d and finally a magnetically dead layer is clearly detected at d = 1.4 nm. The magnetically dead layer has frustration of magnetic interactions which is revealed from comparison between the magnetizations at 300 and 6 K. From analysis using configuration-interaction cluster-model calculation, the decrease of d leads to a decrease in the inverse-to-normal spinel structure ratio and also a decrease in the average valence of Fe at the octahedral sites. These results strongly indicate that the magnetically dead layer at the CoFe2O4/Al2O3 interface originates from various complex networks of superexchange interactions through the change in the crystallographic and electronic structures. Furthermore, from comparison of the magnetic properties between d = 1.4 and 2.3 nm, it is found that ferrimagnetic order of the magnetically dead layer at d = 1.4 nm is restored by the additional growth of the 0.9-nm-thick CoFe2O4 layer on it.

cond-mat.mtrl-sci

Electronic Structures of Ferromagnetic CeAgSb$_2$:Soft X-ray Absorption, Magnetic Circular Dichroism and Angle-Resolved Photoemission Spectroscopies

We report a combined study for the electronic structures of ferromagnetic CeAgSb$_2$ using soft X-ray absorption (XAS), magnetic circular dichroism (XMCD), and angle-resolved photoemission (ARPES) spectroscopies. The Ce $M_{4, 5}$ XAS spectra show very small satellite structures, reflecting a strongly localized character of the Ce $4f$ electrons. The linear dichroism effects in the Ce $M_{4, 5}$ XAS spectra demonstrate the ground state Ce $4f$ symmetry of $Γ{_6}$, the spatial distribution of which is directed along the $c$-axis. The XMCD results give support to the picture of local-moment magnetism in CeAgSb$_2$. Moreover it is also found that the theoretical band dispersions for LaAgSb$_2$ provides better description of the ARPES band structures than those for CeAgSb$_2$. Nevertheless, ARPES spectra at the Ce $3d$-$4f$ resonance show the momentum dependence for the intensity ratio between Ce $4f^{1}_{5/2}$ and $4f^{1}_{7/2}$ peaks in a part of the Brillouin zone, suggesting the non-negligible momentum dependent hybridization effect between the Ce $4f$ and the conduction electrons. This is associated with the moderate mass enhancement in CeAgSb$_2$.

cond-mat.str-el

Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films

GeMn granular thin films are a unique and promising material for spintronics applications due to large positive magnetoresistance (MR). Previous studies on GeMn have suggested that the large MR is related to nanospinodal decomposition of GeMn into Mn-rich ferromagnetic nanoparticles and Mn-poor paramagnetic matrix. However, its microscopic origin of the MR has not been clarified yet. Here, using X-ray magnetic circular dichroism (XMCD), which is extremely sensitive to the local magnetic state of each atom, we investigate the magnetic properties of the nanoparticles and the matrix in GeMn separately. We find that the MR ratio is proportional to the product of the magnetizations originating from the nanoparticles and the matrix. This result indicates that spin-polarized holes in the nanoparticles penetrate into the matrix and that these holes undergo spin-disorder magnetic scattering by the paramagnetic Mn atoms in the matrix, which induces the large MR.

cond-mat.mtrl-sci

Electronic structures of ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ studied by angle-resolved photoelectron spectroscopy

The electronic structures of the ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ in the paramagnetic phase were studied by angle-resolved photoelectron spectroscopy using soft X-rays ($hν=400-500$). The quasi-particle bands with large contributions from $\mathrm{U}~5f$ states were observed in the vicinity of $E_\mathrm{F}$, suggesting that the $\mathrm{U}~5f$ electrons of these compounds have an itinerant character. Their overall band structures were explained by the band-structure calculations treating all the $\mathrm{U}~5f$ electrons as being itinerant. Meanwhile, the states in the vicinity of $E_\mathrm{F}$ show considerable deviations from the results of band-structure calculations, suggesting that the shapes of Fermi surface of these compounds are qualitatively different from the calculations, possibly caused by electron correlation effect in the complicated band structures of the low-symmetry crystals. Strong hybridization between $\mathrm{U}~5f$ and $\mathrm{Co}~3d$ states in $\mathrm{UCoGe}$ were found by the $\mathrm{Co}~2p-3d$ resonant photoemission experiment, suggesting that $\mathrm{Co}~3d$ states have finite contributions to the magnetic, transport, and superconducting properties.

cond-mat.str-el

Room temperature local ferromagnetism and nanoscale domain growth in the ferromagnetic semiconductor GeFe

We investigate the local electronic structure and magnetic properties of the group IV based ferromagnetic semiconductor, GeFe, using soft X ray magnetic circular dichroism. Our results show that the doped Fe 3d electrons are strongly hybridized with the Ge 4p states, and have an unusually large orbital magnetic moment relative to the spin magnetic moment; i.e., morb/mspin = 0.3. We find that local ferromagnetic domains, which are formed through ferromagnetic exchange interactions in the high Fe content regions of the GeFe films, exist at room temperature, well above the Curie temperature. We demonstrate the first observation of the intriguing nanoscale domain growth process in which ferromagnetic domains expand as the temperature decreases, followed by a transition of the entire film into a ferromagnetic state at the Curie temperature.

cond-mat.mtrl-sci

Probing Strongly Correlated 4f-Orbital Symmetry of the Ground State in Yb Compounds by Linear Dichroism in Core-Level Photoemission

We show that the strongly correlated 4f-orbital symmetry of the ground state is revealed by linear dichroism in core-level photoemission spectra as we have discovered for YbRh2Si2 and YbCu2Si2. Theoretical analysis tells us that the linear dichroism reflects the anisotropic charge distributions resulting from crystalline electric field. We have successfully determined the ground-state 4f symmetry for both compounds from the polarization-dependent angle-resolved core-level spectra at a low temperature well below the first excitation energy. The excited-state symmetry is also probed by temperature dependence of the linear dichroism where the high measuring temperatures are of the order of the crystal-field-splitting energies.

cond-mat.str-el

Thickness-dependent ferromagnetic metal to paramagnetic insulator transition in La$_{0.6}$Sr$_{0.4}$MnO$_3$ thin films studied by x-ray magnetic circular dichroism

Metallic transition-metal oxides undergo a metal-to-insulator transition (MIT) as the film thickness decreases across a ritical thickness of several monolayers (MLs), but its driving mechanism remains controversial. We have studied the thickness-dependent MIT of the ferromagnetic metal La$_{0.6}$Sr$_{0.4}$MnO$_3$ by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. As the film thickness was decreased across the critical thickness of the MIT (6-8 ML), a gradual decrease of the ferromagnetic signals and a concomitant increase of paramagnetic signals were observed, while the Mn valence abruptly decreased towards Mn$^{3+}$. These observations suggest that the ferromagnetic phase gradually and most likely inhomogeneously turns into the paramagnetic phase and both phases abruptly become insulating at the critical thickness.

cond-mat.str-el

Itinerant magnetism in URhGe revealed by angle resolved photoelectron spectroscopy

The electronic structure of the ferromagnetic superconductor URhGe in the paramagnetic phase has been studied by angle-resolved photoelectron spectroscopy using soft x rays (hn=595-700 eV). Dispersive bands with large contributions from U 5f states were observed in the ARPES spectra, and form Fermi surfaces. The band structure in the paramagnetic phase is partly explained by the band-structure calculation treating all U 5f electrons as being itinerant, suggesting that an itinerant description of U 5f states is a good starting point for this compound. On the other hand, there are qualitative disagreements especially in the band structure near the Fermi level (E_B < 0.5 eV). The experimentally observed bands are less dispersive than the calculation, and the shape of the Fermi surface is different from the calculation. The changes in spectral functions due to the ferromagnetic transition were observed in bands near the Fermi level, suggesting that the ferromagnetism in this compound has an itinerant origin.

cond-mat.str-el

Itinerant Nature of U 5f States in Uranium Mononitride UN Revealed by Angle Resolved Photoelectron Spectroscopy

The electronic structure of the antiferromagnet uranium nitride (UN) has been studied by angle resolved photoelectron spectroscopy using soft X-rays (hn=420-520 eV). Strongly dispersive bands with large contributions from the U 5f states were observed in ARPES spectra, and form Fermi surfaces. The band structure as well as the Fermi surfaces in the paramagnetic phase are well explained by the band-structure calculation treating all the U 5f electrons as being itinerant, suggesting that itinerant description of the U 5f states is appropriate for this compound. On the other hand, changes in the spectral function due to the antiferromagnetic transition were very small. The shapes of the Fermi surfaces in a paramagnetic phase are highly three-dimensional, and the nesting of Fermi surfaces is unlikely as the origin of the magnetic ordering.

cond-mat.str-el

Electronic Structure of Heavy Fermion Uranium Compounds Studied by Core-Level Photoelectron Spectroscopy

High-energy-resolution core-level and valence-band photoelectron spectroscopic studies were performed for the heavy Fermion uranium compounds UGe2, UCoGe, URhGe, URu2Si2, UNi2Al3, UPd2Al3, and UPt3 as well as typical localized and itinerant uranium compounds to understand the relationship between the uranium valence state and their core-level spectral line shapes. In addition to the main line and high-binding energy satellite structure recognized in the core-level spectra of uranium compounds, a shoulder structure on the lower binding energy side of the main lines of localized and nearly localized uranium compounds was also found. The spectral line shapes show a systematic variation depending on the U 5f electronic structure. The core-level spectra of UGe2, UCoGe, URhGe, URu2Si2, and UNi2Al3 are rather similar to those of itinerant compounds, suggesting that U 5f electrons in these compounds are well hybridized with ligand states. On the other hand, the core-level spectra of UPd2Al3 and UPt3 show considerably different spectral line shapes from those of the itinerant compounds, suggesting that U 5f electrons in UPd2Al3 and UPt3 are less hybridized with ligand states, leading to the correlated nature of U 5f electrons in these compounds. The dominant final state characters in their core-level spectra suggest that the numbers of 5f electrons in UGe2, UCoGe, URhGe, URu2Si2, UNi2Al3, and UPd2Al3 are close to but less than three, while that of UPt3 is close to two rather than to three.

cond-mat.str-el