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Yun Wu

Publications and source records attributed to Yun Wu.

46 records · Page 3Linked to original sources

Isotope Effect on Electron-Phonon Interaction in Multiband Superconductor MgB2

We investigate the effect of isotope substitution on the electron-phonon interaction in the multi-band superconductor MgB2 using tunable laser based Angle Resolved Photoemission Spectroscopy. The kink structure around 70 meV in the $σ$ band, which is caused by electron coupling to the E2g phonon mode, is shifted to higher binding energy by ~3.5 meV in Mg(10)B2 and the shift is not affected by superconducting transition. These results serve as the benchmark for investigations of isotope effects in known, unconventional superconductors and newly discovered superconductors where the origin of pairing is unknown.

cond-mat.supr-con↗

Discovery of unconventional charge density wave at the surface of K0.9Mo6O17

We use Angle Resolved Photoemission Spectroscopy (ARPES), Raman spectroscopy, Low Energy Electron Diffraction (LEED) and x-ray scattering to reveal an unusual electronically mediated charge density wave (CDW) in K0.9Mo6O17. Not only does K0.9Mo6O17 lack signatures of electron-phonon coupling, but it also hosts an extraordinary surface CDW, with TS CDW =220 K nearly twice that of the bulk CDW, TB CDW =115 K. While the bulk CDW has a BCS-like gap of 12 meV, the surface gap is ten times larger and well in the strong coupling regime. Strong coupling behavior combined with the absence of signatures of strong electron-phonon coupling indicates that the CDW is likely mediated by electronic interactions enhanced by low dimensionality.

cond-mat.str-el↗

Unoccupied electronic structure and signatures of topological Fermi arcs in the Weyl semimetal candidate Mo$_x$W$_{1-x}$Te$_2$

Weyl semimetals have sparked intense research interest, but experimental work has been limited to the TaAs family of compounds. Recently, a number of theoretical works have predicted that compounds in the Mo$_x$W$_{1-x}$Te$_2$ series are Weyl semimetals. Such proposals are particularly exciting because Mo$_x$W$_{1-x}$Te$_2$ has a quasi two-dimensional crystal structure well-suited to many transport experiments, while WTe$_2$ and MoTe$_2$ have already been the subject of numerous proposals for device applications. However, with available ARPES techniques it is challenging to demonstrate a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$. According to the predictions, the Weyl points are above the Fermi level, the system approaches two critical points as a function of doping, there are many irrelevant bulk bands, the Fermi arcs are nearly degenerate with bulk bands and the bulk band gap is small. Here, we study Mo$_x$W$_{1-x}$Te$_2$ for $x = 0.07$ and 0.45 using pump-probe ARPES. The system exhibits a dramatic response to the pump laser and we successfully access states $> 0.2$eV above the Fermi level. For the first time, we observe direct, experimental signatures of Fermi arcs in Mo$_x$W$_{1-x}$Te$_2$, which agree well with theoretical calculations of the surface states. However, we caution that the interpretation of these features depends sensitively on free parameters in the surface state calculation. We comment on the prospect of conclusively demonstrating a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$.

cond-mat.mtrl-sci↗

Realization of Room-Temperature Phonon-limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample quality enables us to quantitatively extract the mobility components limited by Coulomb impurities, intrinsic and surface optical phonons, and study their scaling with temperature, carrier density and dielectric constant. The excellent agreement between our theoretical analysis and experimental data demonstrates unambiguously that room-temperature phonon-limited transport is achieved in monolayer MoS2, which is a necessary factor for electronic device applications.

cond-mat.mtrl-sci↗

High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics

The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm2/Vs (337 cm2/Vs) is reached at room temperature (low temperature) for monolayer WS2. A theoretical model for electron transport is also developed.

cond-mat.mtrl-sci↗

Temperature induced Lifshitz transition in WTe2

We use ultra-high resolution, tunable, VUV laser-based, angle-resolved photoemission spectroscopy (ARPES) and temperature and field dependent resistivity and thermoelectric power (TEP) measurements to study the electronic properties of WTe2, a compound that manifests exceptionally large, temperature dependent magnetoresistance. The temperature dependence of the TEP shows a change of slope at T=175 K and the Kohler rule breaks down above 70-140 K range. The Fermi surface consists of two electron pockets and two pairs of hole pockets along the X-Gamma-X direction. Upon increase of temperature from 40K, the hole pockets gradually sink below the chemical potential. Like BaFe2As2, WTe2 has clear and substantial changes in its Fermi surface driven by modest changes in temperature. In WTe2, this leads to a rare example of temperature induced Lifshitz transition, associated with the complete disappearance of the hole pockets. These dramatic changes of the electronic structure naturally explain unusual features of the transport data.

cond-mat.str-el↗

Dynamic control of defective gap mode through defect location

A 1D model is developed for defective gap mode (DGM) with two types of boundary conditions: conducting mesh and conducting sleeve. For a periodically modulated system without defect, the normalized width of spectral gaps equals to the modulation factor, which is consistent with previous studies. For a periodic system with local defects introduced by the boundary conditions, it shows that the conducting-mesh-induced DGM is always well confined by spectral gaps while the conducting-sleeve-induced DGM is not. The defect location can be a useful tool to dynamically control the frequency and spatial periodicity of DGM inside spectral gaps. This controllability can be applied to optical microcavities and waveguides in photonic crystals and the interaction between gap eigenmodes and energetic particles in fusion plasmas.

physics.plasm-ph↗

Unusual microwave response and bulk conductivity of very thin fese0.3te0.7 films as a function of temperature

Results of X-band microwave surface impedance measurements of FeSe1-xTex very thin film are reported. The effective surface resistance shows appearance of peak at T less and near Tc when plotted as function of temperature. The authors suggests that the most well-reasoned explanation can be based on the idea of the changing orientation of the microwave magnetic field at a SN phase transition near the surface of a very thin film. The magnetic penetration depth exhibits a power-law behavior of delta lambda proportional to T with an exponent n = 2.4 at low temperatures, which is noticeably higher than in the published results on FeSe1-xTexsingle crystal. However the temperature dependence of the superfluid conductivity remains very different from the behavior described by the BCS theory. Experimental results are fitted very well by a two-gap model with delta1/kTc=0.43 and delta2/kTc=1.22,thus supporting s(+-)- wave symmetry. The rapid increase of the quasiparticle scattering time is obtained from the microwave impedance measurements.

cond-mat.supr-con↗

Tunable VUV laser based spectrometer for Angle Resolved Photoemission Spectroscopy (ARPES)

We have developed an angle-resolved photoemission spectrometer with tunable VUV laser as a photon source. The photon source is based on the fourth harmonic generation of a near IR beam from a Ti:sapphire laser pumped by a CW green laser and tunable between 5.3eV and 7eV. The most important part of the set-up is a compact, vacuum enclosed fourth harmonic generator based on KBBF crystals, grown hydrothermally in the US. This source can deliver a photon flux of over 10^14 photons/s. We demonstrate that this energy range is sufficient to measure the kz dispersion in an iron arsenic high temperature superconductor, which was previously only possible at synchrotron facilities.

physics.optics↗