arXiv subjects

Yuping Zeng

Publications and source records attributed to Yuping Zeng.

5 recordsLinked to original sources

arXiv2026

High Performance TiO2 Ferroelectric Field Effect Transistors with HfZrO2 for Neuromorphic Computing

TiO2 ferroelectric field effect transistors (FeFETs) with HfZrO2 (HZO) ferroelectric dielectric layers and bottom gate topology are fabricated for applications in neuromorphic systems. Two sets of devices are fabricated with different gate topologies by varying the thickness of the ferroelectric gate stack. Different device architectures are studied by varying the source drain length (LSD) and gate length (LG). The devices have high on/off ratios up to 10^7 with low leakage off currents <10^-12 A. Repeated cycle testing shows high reliability and a stable memory window. The devices have large memory windows ranging from 3 to 8 V.

physics.app-ph↗

arXiv2025

Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth

Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap at high Sn concentrations. However, synthesizing Sn-rich GeSn structures remains challenging due to the low solid solubility of Sn in Ge (less than 1%) and the substantial lattice mismatch ( about 14%) between Sn and Ge. In this work, we demonstrate the successful growth of high-quality, relaxed GeSn layers with Sn contents of 9.2% and 11.4% on Si(100) substrates via molecular beam epitaxy (MBE). As far as we know, this is the first report of direct bandgap photoluminescence observed from MBE-grown GeSn films without post-growth annealing. Structural characterizations including X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM) confirm uniform Sn incorporation with minimal defect formation. Atomic force microscopy (AFM) reveals smooth surfaces with low roughness. Temperature-dependent photoluminescence (PL) measurements further confirm direct bandgap emission, representing a new stage in the development of MBE-grown GeSn.

physics.app-ph↗

arXiv2024

Atomic short-range order: a new degree of freedom for band engineering of GeSn semiconductor alloys

Chemical short-range order (SRO) in alloys denotes the statistical preference or avoidance between atomic species on neighboring lattice sites. Here, we highlight SRO as a powerful new mechanism for semiconductor alloy band engineering. Atom probe tomography reveals a significantly higher probability of Sn-Sn first nearest neighbors (1NNs) in thin-film GeSn alloys grown by molecular beam epitaxy (MBE) vs. chemical vapor deposition (CVD). Remarkably, although lower Sn concentration typically widens the bandgap, we find that the stronger presence of Sn-Sn 1NN pairs in MBE samples overrides this trend, resulting in a narrower bandgap despite having 2 at.\% lower Sn content than CVD samples. First-principles modeling corroborates this effect, attributing these SRO variations to distinctive surface terminations and growth temperatures between MBE and CVD. These findings establish SRO as a new degree of freedom for semiconductor band engineering beyond composition, strain, and quantum confinement, unlocking novel device mechanisms for the post-Moore era.

cond-mat.mtrl-sci↗

arXiv2021

High-Performance HZO/InAlN/GaN MIS-HEMT with fT/fmax of 155/250 GHz

Scaling of GaN high-electron-mobility transistors (HEMTs) usually increases gate leakage current and deteriorates breakdown characteristic, limiting the maximum drain current and output power density. These bottlenecks can be circumvented by inserting a dielectric material under the gate of HEMTs. Doped HfO2 is an excellent dielectric material but unexplored so far as the gate material of HEMTs for high-speed device application. Here we demonstrate that Zr-doped HfO2 (HZO)-gated InAlN/GaN metal-insulator-semiconductor (MIS) HEMTs exhibit remarkable properties. The device with a gate length (Lg) of 50 nm exhibits maximum drain current (Id,max) of 2.15 A/mm, a transconductance (gm) peak of 476 mS/mm, an on/off current ratio (Ion/Ioff) of 9.3*107, a low drain-induced barrier lowing (DIBL) of 45 mV/V. RF characterizations reveal a current gain cutoff frequency (fT) of 155 GHz and a maximum oscillation frequency (fmax) of 250 GHz, resulting in a (fT*fmax)1/2 of 197 GHz.These properties, particularly the high (fT/fmax)1/2 and JFOM are highly desirable for the millimeter-wave power applications, demonstrating the great technological potential of HZO/InAlN/GaN MIS-HEMTs.

physics.app-ph↗

arXiv2020

Fmax = 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealing

In this letter, N2 and forming gas (FG) were used during ohmic contact annealing of InAlN/GaN HEMTs on Si. It is found that N2 annealing offers lower ohmic contact resistance (RC) while FG annealing features lower sheet resistance (Rsheet). Then FG/N2 two-step annealing was used to achieve a subthreshold swing (SS) of 113 mV/dec, an on/off current (Ion/Ioff) ratio of ~ 106, a transconductance (gm) peak of 415 mS/mm, a record low drain-inducing barrier lowing (DIBL) of 65 mV/V, and a record high power gain cutoff frequency (fmax) of 270 GHz on 50-nm InAlN/GaN HEMT on Si.

physics.app-ph↗