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arXiv · 2005.08422

Fmax = 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealing

Peng Cui·Meng Jia·Guangyang Lin·Jie Zhang·Lars Gundlach·Yuping Zeng
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Abstract

In this letter, N2 and forming gas (FG) were used during ohmic contact annealing of InAlN/GaN HEMTs on Si. It is found that N2 annealing offers lower ohmic contact resistance (RC) while FG annealing features lower sheet resistance (Rsheet). Then FG/N2 two-step annealing was used to achieve a subthreshold swing (SS) of 113 mV/dec, an on/off current (Ion/Ioff) ratio of ~ 106, a transconductance (gm) peak of 415 mS/mm, a record low drain-inducing barrier lowing (DIBL) of 65 mV/V, and a record high power gain cutoff frequency (fmax) of 270 GHz on 50-nm InAlN/GaN HEMT on Si.

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Peng Cui, Meng Jia, Guangyang Lin, Jie Zhang, Lars Gundlach, Yuping Zeng. 2020-05-18. Fmax = 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealing. https://arxiv.org/abs/2005.08422

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