arXiv subjects

Yuqin Duan

Publications and source records attributed to Yuqin Duan.

4 recordsLinked to original sources

arXiv2025

A Bayesian Approach towards Atomically-precise Localization in Fluorescence Microscopy

Super-resolution microscopy has revolutionized the imaging of complex physical and biological systems by surpassing the Abbe diffraction limit. Recent advancements, particularly in single-molecule localization microscopy (SMLM), have pushed localization below nanometer precision, by applying prior knowledge of correlated fluorescence emission from single emitters. However, achieving a refinement from 1 nm to 1 Angstrom demands a hundred-fold increase in collected photon signal. This quadratic resource scaling imposes a fundamental barrier in SMLM, where the intense photon collection is challenged by photo-bleaching, prolonged integration times, and inherent practical constraints. Here, we break this limit by harnessing the periodic nature of the atomic lattice structure. Applying this discrete grid imaging technique (DIGIT) in a quantum emitter system, we observe an exponential collapse of localization uncertainty once surpassing the host crystal's atomic lattice constant. We further applied DIGIT to a large-scale quantum emitter array, enabling parallel positioning of each emitter through wide-field imaging. Collectively, these advancements establish DIGIT as a competitive tool for achieving unprecedented, precise measurements, ultimately paving the way to direct optical resolution of crystal and atomic features within quantum and biological systems.

physics.optics↗

arXiv2025

Cavity-enhanced solid-state nuclear spin gyroscope

Solid-state quantum sensors based on ensembles of nitrogen-vacancy (NV) centers in diamond have emerged as powerful tools for precise sensing applications. Nuclear spin sensors are particularly well-suited for applications requiring long coherence times, such as inertial sensing, but remain underexplored due to control complexity and limited optical readout efficiency. In this work, we propose cooperative cavity quantum electrodynamic (cQED) coupling to achieve efficient nuclear spin readout. Unlike previous cQED methods used to enhance electron spin readout, here we employ two-field interference in the NV hyperfine subspace to directly probe the nuclear spin transitions. We model the nuclear spin NV-cQED system (nNV-cQED) and observe several distinct regimes, including electromagnetically induced transparency, masing without inversion, and oscillatory behavior. We then evaluate the nNV-cQED system as an inertial sensor, indicating a rotation sensitivity improved by three orders of magnitude compared to previous solid-state spin demonstrations. Furthermore, we show that the NV electron spin can be simultaneously used as a comagnetometer, and the four crystallographic axes of NVs can be employed for vector resolution in a single nNV-cQED system. These results showcase the applications of two-field interference using the nNV-cQED platform, providing critical insights into the manipulation and control of quantum states in hybrid NV systems and unlocking new possibilities for high-performance quantum sensing.

quant-ph↗

arXiv2021

A vertically-loaded diamond microdisk resonator spin-photon interface

We propose and optimize a vertically-loaded diamond microdisk resonator (VLDMoRt) coupled to a nitrogen-vacancy (NV) center in diamond for efficient collection of zero-phonon-line emission into low numerical aperture ($\text{NA}$) free-space modes. The VLDMoRt achieves a Purcell enhancement of 172 with $39\%$ of the emitted light collected within a $\text{NA}$ of 0.6, leading to a total external spin-photon collection efficiency of 0.33. As the design is compatible with established nanofabrication techniques and couples to low-NA modes accessible by cryogenic free-space optical systems, it is a promising platform for efficient spin-photon interfaces based on diamond quantum emitters.

quant-ph↗

arXiv2020

A Ferroelectric Semiconductor Field-Effect Transistor

Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application. Here we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (α-In2Se3), is used as the channel material in the device. α-In2Se3 was chosen due to its appropriate bandgap, room temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers, and potential for large-area growth. A passivation method based on the atomic-layer deposition of aluminum oxide (Al2O3) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO2) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 108, a maximum on-current of 862 μA μm-1, and a low supply voltage.

physics.app-ph↗