arXiv subjects

Yury Kolomensky

Publications and source records attributed to Yury Kolomensky.

3 recordsLinked to original sources

arXiv2026

CERES: A Cryogenic Experiment to Reconstruct Energy Systematics in TeO$_{2}$ bolometers

Cryogenic calorimetric detectors are a powerful tool in the search for rare events such as neutrinoless double beta decay ($0νββ$), due to their excellent energy resolution and low intrinsic background. The performance of these detectors depends critically on a precise understanding of their energy scale and energy resolution. Recent studies suggest that both energy scale and energy resolution may vary depending on the spatial location and topology of energy deposition within the detector, indicating the presence of previously uncharacterized systematic effects. The Cryogenic Experiment to Reconstruct Energy Systematics (CERES) is a dedicated experiment designed to directly measure the position dependence of calorimetric response in Tellurium Dioxide (TeO$_{2}$) crystals. This paper details the experimental design, current status, and future upgrade plans for CERES.

physics.ins-det↗

arXiv2021

A direct-sampling RF receiver for MOLLER beam charge measurement

We have developed and tested a direct-sampling RF receiver capable of measuring the amplitude of a 1497 MHz sinusoidal signal in 0.5 ms integration windows to within <10 ppm relative uncertainty. The receiver is intended for measuring signals from beam current monitoring cavities on the beamline of the Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson Laboratory. The signal strength, frequency, and integration window are consistent with the thus far unmet requirements of the upcoming MOLLER experiment to measure the beam charge for different helicity states.

physics.ins-det↗

arXiv2020

Cryogenic Characterization of 180 nm CMOS Technology at 100 mK

Conventional CMOS technology operated at cryogenic conditions has recently attracted interest for its uses in low-noise electronics. We present one of the first characterizations of 180 nm CMOS technology at a temperature of 100 mK, extracting I/V characteristics, threshold voltages, and transconductance values, as well as observing their temperature dependence. We find that CMOS devices remain fully operational down to these temperatures, although we observe hysteresis effects in some devices. The measurements described in this paper can be used to inform the future design of CMOS devices intended to be operated in this deep cryogenic regime.

physics.ins-det↗