arXiv subjects

Z. D. Kvon

Publications and source records attributed to Z. D. Kvon.

108 records · Page 6Linked to original sources

arXiv2008

Experimental investigation of the ratchet effect in a two-dimensional electron system with broken spatial inversion symmetry

We report on experimental evidence of directed electron transport, induced by external linear-polarized microwave irradiation, in a two-dimensional spatially-periodic asymmetrical system called ratchet. The broken spatial symmetry was introduced in a high mobility two-dimensional electron gas based on AlGaAs/GaAs heterojunction, by patterning an array of artificial semi-discs-shaped antidots. We show that the direction of the transport is efficiently changed by microwave polarization. The dependence of the effect on magnetic field and temperature is investigated. This represents a significant step towards the realization of new microwave detectors and current generators.

cond-mat.mes-hall↗

arXiv2007

Strongly enhanced effective mass in dilute two-dimensional electron systems: System-independent origin

We measure the effective mass in a dilute two-dimensional electron system in (111)-silicon by analyzing temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A strong enhancement of the effective mass with decreasing electron density is observed. The mass renormalization as a function of the interaction parameter r_s is in good agreement with that reported for (100)-silicon, which shows that the relative mass enhancement is system- and disorder-independent being determined by electron-electron interactions only.

cond-mat.str-el↗

arXiv2007

Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems

The magneto-gyrotropic photogalvanic and spin-galvanic effects are observed in (0001)-oriented GaN/AlGaN heterojunctions excited by terahertz radiation. We show that free-carrier absorption of linearly or circularly polarized terahertz radiation in low-dimensional structures causes an electric photocurrent in the presence of an in-plane magnetic field. Microscopic mechanisms of these photocurrents based on spin-related phenomena are discussed. Properties of the magneto-gyrotropic and spin-galvanic effects specific for hexagonal heterostructures are analyzed.

cond-mat.mes-hall↗

arXiv2007

Photogalvanic effects in HgTe quantum wells

We report on the observation of the terahertz radiation induced circular (CPGE) and linear (LPGE) photogalvanic effects in HgTe quantum wells. The current response is well described by the phenomenological theory of CPGE and LPGE.

cond-mat.mes-hall↗

arXiv2006

Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots

In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot lattices. In samples with a 600 nm lattice period a new series of well-developed magnetoresistance oscillations has been found beyond the last commensurability peak which are supposed to originate from periodic skipping orbits encircling an antidot with a particular number of bounds.

cond-mat.mes-hall↗

arXiv2005

Demonstration of Rashba spin splitting in GaN-based heterostructures

The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN quantum well (QW) structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin-splitting of the conduction band in k-space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin-splitting, caused by the built-in asymmetry at the AlGaN/GaN interface.

cond-mat.other↗

arXiv2005

Directed electron transport through ballistic quantum dot under microwave radiation

Rectification of microwave radiation by asymmetric, ballistic quantum dot is observed. The directed transport is studied at different frequency (1-40 GHz) temperatures (0.3K-6K)and magnetic field. Dramatic reduction of the rectification is found in magnetic fields at which the cyclotron (Larmor) radius of the electron orbits at Fermi level is smaller than the size of the quantum dot. It strongly suggests the ballistic nature of the observed nonlinear phenomena. Both symmetric and anti-symmetric with respect to the magnetic field contributions to the directed transport are presented. We have found that the behavior of the symmetric part of the rectified voltage with the magnetic field is different significantly for microwaves with different frequencies. A ballistic model of the directed transport is proposed.

cond-mat.mes-hall↗

arXiv2004

Quantum corrections to the conductivity and Hall coefficient of a 2D electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: transition from diffusive to ballistic regime

We report an experimental study of the quantum corrections to the longitudinal conductivity and the Hall coefficient of a low mobility, high density two-dimensional two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5 K - 110 K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It was therefore possible to study the crossover region for the longitudinal conductivity and the Hall effect.

cond-mat.mes-hall↗

arXiv2004

Interactions in high-mobility 2D electron and hole systems

Electron-electron interactions mediated by impurities are studied in several high-mobility two-dimensional (electron and hole) systems where the parameter $k_BTτ/\hbar $ changes from 0.1 to 10 ($τ$ is the momentum relaxation time). This range corresponds to the \textit{intermediate} and \textit {ballistic} regimes where only a few impurities are involved in electron-electron interactions. The interaction correction to the Drude conductivity is detected in the temperature dependence of the resistance and in the magnetoresistance in parallel and perpendicular magnetic fields. The effects are analysed in terms of the recent theories of electron interactions developed for the ballistic regime. It is shown that the character of the fluctuation potential (short-range or long-range) is an important factor in the manifestation of electron-electron interactions in high-mobility 2D systems.

cond-mat.mes-hall↗

arXiv2003

Linear in-plane magnetoconductance and spin susceptibility of a 2D electron gas on a vicinal silicon surface

In this work we have studied the parallel magnetoresistance of a 2DEG near a vicinal silicon surface. An unusual, linear magnetoconductance is observed in the fields up to $B = 15$ T, which we explain by the effect of spin olarization on impurity scattering. This linear magnetoresistance shows strong anomalies near the boundaries of the minigap in the electron spectrum of the vicinal system.

cond-mat.mes-hall↗

arXiv2003

Conductivity of a 2DEG in Si/SiGe heterostructure near metal- insulator transition: role of the short and long range scattering potential

We report the observation of a metal-insulator transition (MIT) in a two- dimensional electron gas (2DEG) in a Si/SiGe heterostructure at zero magnetic field. On going through the MIT we observe the corresponding evolution of the magnetic field induced transition between the insulating phase and the quantum Hall (QH) liquid state in the QH regime. Similar to the previous reports for a GaAs sample, we find that the critical magnetic field needed to produce the transition becomes zero at the critical electron density corresponding to the zero field MIT. The temperature dependence of the conductivity in a metallic-like state at zero field is compared with the theory of the interaction corrections at intermediate and ballistic regimes $k_{B}Tτ/\hbar\geq1$. The theory yields a good fit for the linear part of the curve. However the slope of that part of $σ_{xx}(T)$ is about two times smaller than that reported in other 2D systems with similar values of $r_s$. At the same time, the recent theory of magnetoresistance due to electron-electron interaction in the case of arbitrary $k_{B}Tτ/\hbar$, smooth disorder and classically strong fields does not seem to be quite adequate for the description of the parabolic magnetoresistance observed in our samples. We attribute these results to the fact that neither of these theories deals with the whole scattering potential in a sample but leaves either its long range or its short range component out of consideration.

cond-mat.mes-hall↗

arXiv2003

Anomalous state of a 2DEG in vicinal Si MOSFET in high magnetic fields

We report the observation of an anomalous state of a 2D electron gas near a vicinal surface of a silicon MOSFET in high magnetic fields. It is characterised by unusual behaviour of the conductivities $σ_{xx}$ and $σ_{xy}$, which can be described as a collapse of the Zeeman spin splitting accompanied by a large peak in $σ_{xx}$ and an anomalous peak in $ σ_{xy}$. It occurs at densities corresponding to the position of the Fermi level above the onset of the superlattice mini-gap inherent to the vicinal system. The range of fields and densities where this effect exists has been determined, and it has been shown that it is suppressed by parallel magnetic fields.

cond-mat.mes-hall↗

arXiv2002

High-field side of Superconductor-Insulator Transition

We report the experimental observation of a magnetic-field-tuned superconductor-insulator transition (SIT) in ultrathin TiN films. The low temperature transport properties of these films show scaling behavior consistent with a transition driven by quantum phase fluctuations in two-dimensional superconductor. The magnetoresistance reveals peak and a subsequent decrease in fields higher than the critical field. The temperature dependences of the isomagnetic resistance data on the high-field side of the SIT have been analyzed and the transition from insulating to metallic phase is found, with at high fields the zero-temperature asymptotic value of the resistance being equal to h/e^2.

cond-mat.supr-con↗

arXiv2002

Subgap anomaly and above-energy-gap structure in chains of diffusive SNS junctions

We present the results of low-temperature transport measurements on chains of superconductor--normal-constriction--superconductor (SNS) junctions fabricated on the basis of superconducting PtSi film. A comparative study of the properties of the chains, consisting of 3 and 20 SNS junctions in series, and single SNS junctions reveals essential distinctions in the behavior of the current-voltage characteristics of the systems: (i) the gradual decrease of the effective suppression voltage for the excess conductivity observed at zero bias as the quantity of the SNS junctions increases, (ii) a rich fine structure on the dependences dV/dI-V at dc bias voltages higher than the superconducting gap and corresponding to some multiples of 2Δ/e. A model to explain this above-energy-gap structure based on energy relaxation of electron via Cooper-pair-breaking in superconducting island connecting normal metal electrods is proposed.

cond-mat.supr-con↗

arXiv2000

Two-dimensional array of diffusive SNS junctions with high-transparent interfaces

We report the first comparative study of the properties of two-dimensional arrays and single superconducting film - normal wire - superconducting film (SNS) junctions. The NS interfaces of our SNS junctions are really high transparent, for superconducting and normal metal parts are made from the same material (superconducting polycrystalline PtSi film). We have found that the two-dimensional arrays reveal some novel features: (i) the significant narrowing of the zero bias anomaly (ZBA) in comparison with single SNS junctions, (ii) the appearance of subharmonic energy gap structure (SGS), with up to n=16 (eV=\pm 2Δ/n), with some numbers being lost, (iii) the transition from 2D logarithmic weak localization behavior to metallic one. Our experiments show that coherent phenomena governed by the Andreev reflection are not only maintained over the macroscopic scale but manifest novel pronounced effects as well. The behavior of the ZBA and SGS in 2D array of SNS junctions strongly suggests that the development of a novel theoretical approach is needed which would self-consistently take into account the distribution of the currents, the potentials, and the superconducting order parameter.

cond-mat.mes-hall↗

arXiv2000

Metallic and insulating behaviour of the two-dimensional electron gas on a vicinal surface of Si MOSFETs

The resistance R of the 2DEG on the vicinal Si surface shows an unusual behaviour, which is very different from that in the (100) Si MOSFET where an unconventional metal to insulator transition has been reported. The crossover from the insulator with dR/dT<0 to the metal with dR/dT>0 occurs at a low resistance of R_{\Box}^c \sim 0.04h/e^2. At the low-temperature transition, which we attribute to the existence of a narrow impurity band at the interface, a distinct hysteresis in the resistance is detected. At higher temperatures, another change in the sign of dR/dT is seen and related to the crossover from the degenerate to non-degenerate 2DEG.

cond-mat.mes-hall↗

arXiv1999

Proximity effects and Andreev reflection in mesoscopic SNS junction with perfect NS interfaces

Low temperature transport measurements on superconducting film - normal metal wire - superconducting film (SNS) junctions fabricated on the basis of 6 nm thick superconducting polycrystalline PtSi films are reported. The structures with the normal metal wires of two different lengths L=1.5 $μ$m and L=6$μ$m and the same widths W=0.3$μ$m are studied. Zero bias resistance dip related to pair current proximity effect is observed for all junctions whereas the subharmonic energy gap structure originating from phase coherent multiple Andreev reflections have occurs only in the SNS junctions with short wires.

cond-mat.supr-con↗

arXiv1998

2D Lattice of coupled Sinai billiards: metal or insulator at g<<1

We investigate the transport in a two-dimensional (2D) lattice of coupled Sinai billiards fabricated on the basis of a high-mobility 2D electron gas in GaAs/AlGaAs heterojunction. For the states with low reduced conductivity g<<1 an anomalously weak temperature dependence of g was found. The large negative magnetoresistance described by the Lorentz line-shape of the width corresponding to the half magnetic flux quantum through the area of the billiard is observed. In going from g>1 to g<<1 it strongly increases. The Shubnikov-de Haas oscillations and commensurability magnetoresistance peak are preserved at g<<1. The data suggest that the system studied behaves more like a metal than an insulator at g<<1 and is not described by the generally accepted picture of Anderson localization.

cond-mat.mes-hall↗