arXiv · cond-mat/0509208
Demonstration of Rashba spin splitting in GaN-based heterostructures
Abstract
The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN quantum well (QW) structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin-splitting of the conduction band in k-space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin-splitting, caused by the built-in asymmetry at the AlGaN/GaN interface.
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W. Weber, S. D. Ganichev, Z. D. Kvon, V. V. Bel'kov, L. E. Golub, S. N. Danilov, D. Weiss, W. Prettl, Hyun-Ick Cho, Jung-Hee Lee. 2005-09-08. Demonstration of Rashba spin splitting in GaN-based heterostructures. https://doi.org/10.1063/1.2158024
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