arXiv subjects

Z. F. Wang

Publications and source records attributed to Z. F. Wang.

At least 37 records · Page 2Linked to original sources

arXiv2013

Organic Topological Insulators in Organometallic Lattices

Topological insulators (TIs) are a recently discovered class of materials having insulating bulk electronic states but conducting boundary states distinguished by nontrivial topology. So far, several generations of TIs have been theoretically predicted and experimentally confirmed, all based on inorganic materials. Here, based on first-principles calculations, we predict a family of two-dimensional organic TIs made of organometallic lattices. Designed by assembling molecular building blocks of triphenyl-metal compounds with strong spin-orbit coupling into a hexagonal lattice, this new classes of organic TIs are shown to exhibit nontrivial topological edge states that are robust against significant lattice strain. We envision that organic TIs will greatly broaden the scientific and technological impact of TIs.

cond-mat.mtrl-sci↗

arXiv2013

Quantum Anomalous Hall Effect in 2D Organic Topological Insulators

Quantum anomalous Hall effect (QAHE) is a fundamental transport phenomenon in the field of condensed-matter physics. Without external magnetic field, spontaneous magnetization combined with spin-orbit coupling give rise to a quantized Hall conductivity. So far, a number of theoretical proposals have been made to realize the QAHE, but all based on inorganic materials. Here, using first-principles calculations, we predict a family of 2D organic topological insulators (OTIs) for realizing the QAHE. Designed by assembling molecular building blocks of triphenyl-transition-metal compounds into a hexagonal lattice, this new classes of organic materials are shown to have a nonzero Chern number and exhibit a gapless chiral edge state within the Dirac gap.

cond-mat.mes-hall↗

arXiv2013

Quasiparticle Dynamics in Reshaped Helical Dirac Cone of Topological Insulators

Topological insulators (TIs) and graphene present two unique classes of materials which are characterized by spin polarized (helical) and non-polarized Dirac-cone band structures, respectively. The importance of many-body interactions that renormalize the linear bands near Dirac point in graphene has been well recognized and attracted much recent attention. However, renormalization of the helical Dirac point has not been observed in TIs. Here, we report the experimental observation of the renormalized quasi-particle spectrum with a skewed Dirac cone in a single Bi bilayer grown on Bi2Te3 substrate, from angle-resolved photoemission spectroscopy. First-principles band calculations indicate that the quasi-particle spectra are likely associated with the hybridization between the extrinsic substrate-induced Dirac states of Bi bilayer and the intrinsic surface Dirac states of Bi2Te3 film at close energy proximity. Without such hybridization, only single-particle Dirac spectra are observed in a single Bi bilayer grown on Bi2Se3, where the extrinsic Dirac states Bi bilayer and the intrinsic Dirac states of Bi2Se3 are well separated in energy. The possible origins of many-body interactions are discussed. Our findings provide a means to manipulate topological surface states.

cond-mat.mtrl-sci↗

arXiv2013

Creation of Helical Dirac Fermions by Interfacing Two Gapped Systems of Ordinary Fermions

Topological insulators (TIs) are a unique class of materials characterized by a surface (edge) Dirac cone state of helical Dirac fermions in the middle of bulk (surface) gap. When the thickness (width) of TIs is reduced, however, interaction between the surface (edge) states will open a gap removing the Dirac cone. Using density function theory calculation, we demonstrate the creation of helical Dirac fermions from interfacing two gapped TI films, a single bilayer Bi grown on a single quintuple layer Bi2Se3 or Bi2Te3. The theoretical prediction is directly confirmed by experiment. We further show that the extrinsic helical Dirac fermions consists of predominantly Bi bilayer states, which are created by a giant Rashba effect due to interfacial charge transfer. Our findings provide a promising new method to create novel TI materials by interface engineering.

cond-mat.mtrl-sci↗

arXiv2010

Formation of Hydrogenated Graphene Nanoripples by Strain Engineering and Directed Surface Self-assembly

We propose a new class of semiconducting graphene-based nanostructures: hydrogenated graphene nanoripples (HGNRs), based on continuum-mechanics analysis and first principles calculations. They are formed via a two-step combinatorial approach: first by strain engineered pattern formation of graphene nanoripples, followed by a curvature-directed self-assembly of H adsorption. It offers a high level of control of the structure and morphology of the HGNRs, and hence their band gaps which share common features with graphene nanoribbons. A cycle of H adsorption/desorption at/from the same surface locations completes a reversible metal-semiconductor-metal transition with the same band gap.

cond-mat.mes-hall↗

arXiv2008

Fabrication of Embedded Microvalve on PMMA Microfluidic Devices through Surface Functionalization

The integration of a PDMS membrane within orthogonally placed PMMA microfluidic channels enables the pneumatic actuation of valves within bonded PMMA-PDMS-PMMA multilayer devices. Here, surface functionalization of PMMA substrates via acid catalyzed hydrolysis and air plasma corona treatment were investigated as possible techniques to permanently bond PMMA microfluidic channels to PDMS surfaces. FTIR and water contact angle analysis of functionalized PMMA substrates showed that air plasma corona treatment was most effective in inducing PMMA hydrophilicity. Subsequent fluidic tests showed that air plasma modified and bonded PMMA multilayer devices could withstand fluid pressure at an operational flow rate of 9 mircoliters/min. The pneumatic actuation of the embedded PDMS membrane was observed through optical microscopy and an electrical resistance based technique. PDMS membrane actuation occurred at pneumatic pressures of as low as 10kPa and complete valving occurred at 14kPa for 100 micrometers x 100 micrometers channel cross-sections.

cs.OH↗

arXiv2008

Electronic Structure in Gapped Graphene with Coulomb Potential

In this paper, we numerically study the bound electron states induced by long range Coulomb impurity in gapped graphene and the quasi-bound states in supercritical region based on the lattice model. We present a detailed comparison between our numerical simulations and the prediction of the continuum model which is described by the Dirac equation in (2+1)-dimensional Quantum Electrodynamics (QED). We also use the Fano's formalism to investigate the quasi-bound state development and design an accessible experiments to test the decay of the supercritical vacuum in the gapped graphene.

cond-mat.mes-hall↗

arXiv2008

Formation of Embedded Microstructures by Thermal Activated Solvent Bonding

We present a thermal activated solvent bonding technique for the formation of embedded microstrucutres in polymer. It is based on the temperature dependent solubility of polymer in a liquid that is not a solvent at room temperature. With thermal activation, the liquid is transformed into a solvent of the polymer, creating a bonding capability through segmental or chain interdiffusion at the bonding interface. The technique has advantages over the more commonly used thermal bonding due to its much lower operation temperature (30 degrees C lower than the material's Tg), lower load, as well as shorter time. Lap shear test indicated bonding shear strength of up to 2.9 MPa. Leak test based on the bubble emission technique showed that the bonded microfluidic device can withstand at least 6 bars (87 psi) of internal pressure (gauge) in the microchannel. This technique can be applied to other systems of polymer and solvent.

cs.OH↗

arXiv2008

Studies of Polymer Deformation and Recovery in Hot Embossing

In large area micro hot embossing, the process temperature plays a critical role to both the local fidelity of microstructure formation and global uniformity. The significance of low temperature hot embossing is to improve global flatness of embossed devices. This paper reports on experimental studies of polymer deformation and relaxation in micro embossing when the process temperatures are below or near its glass transition temperature (Tg). In this investigation, an indentation system and a micro embosser were used to investigate the relationship of microstructure formation versus process temperature and load pressure. The depth of indentation was controlled and the load force at a certain indentation depth was measured. Experiments were carried out using 1 mm thick PMMA films with the process temperature ranging from Tg-55 degrees C to Tg +20 degrees C. The embossed structures included a single micro cavity and groups of micro cavity arrays. It was found that at temperature of Tg-55 degrees C, elastic deformation dominated the formation of microstructures and significant relaxation happened after embossing. From Tg-20 degrees C to Tg, plastic deformation dominated polymer deformation, and permanent cavities could be formed on PMMA substrates without obvious relaxation. However, the formation of protrusive structures as micro pillars was not complete since there was little polymer flow. With an increase in process temperature, microstructure could be formed under lower loading pressure. Considering the fidelity of a single microstructure and global flatness of embossed substrates, micro hot embossing at a low process temperature, but with good fidelity, should be preferred.

cs.OH↗

arXiv2007

Quantum Dot in Z-shaped Graphene Nanoribbon

Stimulated by recent advances in isolating graphene, we discovered that quantum dot can be trapped in Z-shaped graphene nanoribbon junciton. The topological structure of the junction can confine electronic states completely. By varying junction length, we can alter the spatial confinement and the number of discrete levels within the junction. In addition, quantum dot can be realized regardless of substrate induced static disorder or irregular edges of the junction. This device can be used to easily design quantum dot devices. This platform can also be used to design zero-dimensional functional nanoscale electronic devices using graphene ribbons.

cond-mat.mes-hall↗

arXiv2007

Tuning the electronic structures of armchair graphene nanoribbons through chemical edge modification: A theoretical study

We report combined first-principle and tight-binding (TB) calculations to simulate the effects of chemical edge modifications on structural and electronic properties. The C-C bond lengths and bond angles near the GNR edge have considerable changes when edge carbon atoms are bounded to different atoms. By introducing a phenomenological hopping parameter $t_{1}$ for nearest-neighboring hopping to represent various chemical edge modifications, we investigated the electronic structural changes of nanoribbons with different widths based on the tight-binding scheme. Theoretical results show that addends can change the band structures of armchair GNRs and even result in observable metal-to-insulator transition.

cond-mat.mtrl-sci↗

arXiv2007

An insight into the electronic structure of graphene: from monolayer to multi-layer

In this paper, we analytically investigate the electronic structure of Bernal stacking (AB stacking) graphene evolving from monolayer (a zero-gap semiconductor with a linear Dirac-like spectrum around the Fermi energy) to multi-layer (semi-metal bulk graphite). We firstly derive a real space analytical expression for the free Green's function (propagator) of multi-layer graphene based on the effective-mass approximation. The simulation results exhibit highly spatial anisotropy with three-fold rotational symmetry. By combining with the STM measurement of d2I/dV2 (the second derivative of current), we also provide a clear high-throughput and non-destructive method to identify graphene layers. Such a method is lacking in the emerging graphene research.

cond-mat.mes-hall↗

arXiv2006

Electronic Structure of Bilayer Graphene: A Real-space Green's Function Study

In this paper, a real-space analytical expression for the free Green's function (propagator) of bilayer graphene is derived based on the effective-mass approximation. Green's function displays highly spatial anisotropy with three-fold rotational symmetry. The calculated local density of states (LDOS) of a perfect bilayer graphene produces the main features of the observed scanning tunneling microscopy (STM) images of graphite at low bias voltage. Some predicted features of the LDOS can be verified by STM measurements. In addition, we also calculate the LDOS of bilayer graphene with vacancies by using the multiple-scattering theory (scatterings are localized around the vacancy of bilayer graphene). We observe that the interference patterns are determined mainly by the intrinsic properties of the propagator and the symmetry of the vacancies.

cond-mat.mtrl-sci↗

arXiv2006

Graphene switch design: an illustration of the Klein paradox

An armchair graphene ribbon switch has been designed based on the principle of the Klein paradox. The resulting switch displays an excellent on-off ratio performance. Anomalous tunneling phenomena are observed in our numerical simulations. According to our analytical results, selective tunneling rule is proposed to explain this interesting transport behavior. The switch design enriches the phenomenon of the Klein paradox and also provides a platform to study the paradox.

cond-mat.mes-hall↗

arXiv2002

Monte Carlo Study of an Extended 3-State Potts Model on the Triangular Lattice

By introducing a chiral term into the Hamiltonian of the 3-state Potts model on a triangular lattice additional symmetries are achieved between the clockwise and anticlockwise states and the ferromagnetic state. This model is investigated using Monte Carlo methods. We investigate the full phase diagram and find evidence for a line tricritical points separating the ferromagnetic and antiferromagnetic phases.

cond-mat.stat-mech↗

arXiv1998

dbar/ubar Asymmetry and the Origin of the Nucleon Sea

The Drell-Yan cross section ratios, $σ(p+d)/σ(p+p)$, measured in Fermilab E866, have led to the first determination of $\bar d(x) / \bar u(x)$, $\bar d(x) - \bar u(x)$, and the integral of $\bar d(x) - \bar u(x)$ for the proton over the range $0.02 \le x \le 0.345$. The E866 results are compared with predictions based on parton distribution functions and various theoretical models. The relationship between the E866 results and the NMC measurement of the Gottfried integral is discussed. The agreement between the E866 results and models employing virtual mesons indicates these non-perturbative processes play an important role in the origin of the $\bar d$, $\bar u$ asymmetry in the nucleon sea.

hep-ph↗

arXiv1998

Measurement of the Light Antiquark Flavor Asymmetry in the Nucleon Sea

A precise measurement of the ratio of Drell-Yan yields from an 800 GeV/c proton beam incident on hydrogen and deuterium targets is reported. Over 140,000 Drell-Yan muon pairs with dimuon mass M_{mu+ mu-} >= 4.5 GeV/c^2 were recorded. From these data, the ratio of anti-down (dbar) to anti-up (ubar) quark distributions in the proton sea is determined over a wide range in Bjorken-x. A strong x dependence is observed in the ratio dbar/ubar, showing substantial enhancement of dbar with respect to ubar for x<0.2. This result is in fair agreement with recent parton distribution parameterizations of the sea. For x>0.2, the observed dbar/ubar ratio is much nearer unity than given by the parameterizations.

hep-ex↗

arXiv1997

Inclusive Dielectron Cross Sections in p+p and p+d Interactions at Beam Energies from 1.04 to 4.88 GeV

Measurements of dielectron production in p+p and p+d collisions with beam kinetic energies from 1.04 to 4.88 GeV are presented. The differential cross section is presented as a function of invariant pair mass, transverse momentum, and rapidity. The shapes of the mass spectra and their evolution with beam energy provide information about the relative importance of the various dielectron production mechanisms in this energy regime. The p+d to p+p ratio of the dielectron yield is also presented as a function of invariant pair mass, transverse momentum, and rapidity. The shapes of the transverse momentum and rapidity spectra from the p+d and p+p systems are found to be similar to one another for each of the beam energies studied. The beam energy dependence of the integrated cross sections is also presented.

nucl-ex↗