arXiv subjects

Z. Viskadourakis

Publications and source records attributed to Z. Viskadourakis.

14 recordsLinked to original sources

arXiv2020

Spray-pyrolysis deposited La1-xSrxCoO3 thin films for potential non-volatile memory applications

In this work thin films of the La1-xSrxCoO3 (0.05 < x < 0.26) compound were grown, employing the so-called spray pyrolysis process. The as-grown thin films exhibit polycrystalline microstructure, with uniform grain size distribution, and observable porosity. Regarding their electrical transport properties, the produced thin films show semiconducting-like behavior, regardless the Sr doping level, which is most likely due to both the oxygen deficiencies and the grainy nature of the films. Furthermore, room temperature current-voltage (I-V) measurements reveal stable resistance switching behavior, which is well explained in terms of space-charge limited conduction mechanism. The presented experimental results provide essential evidence regarding the engagement of low cost, industrial-scale methods of growing perovskite transition metal oxide thin films, for potential applications in random access memory devices.

physics.app-ph↗

arXiv2015

Geometric tuning of charge and spin correlations in manganite superlattices

We report a modulation of the in-plane magnetotransport in artificial manganite superlattice (SL) [(NdMnO3)n /(SrMnO3)n /(LaMnO3)n]m by varying the layer thickness n while keeping the total thickness of the structure constant. Charge transport in these heterostructures is confined to the interfaces and occurs via variable range hopping (VRH). Upon increasing n, the interfacial separation rises, leading to a suppression of the electrostatic screening between carriers of neighboring interfaces and the opening of a Coulomb gap at the Fermi level (EF). The high-field magnetoresistance (MR) is universally negative due to progressive spin alignment. However at a critical thickness of n=5 unit cells (u.c.), an exchange field coupling between ferromagnetically ordered interfaces results in positive MR at low magnetic field (H). Our results demonstrate the ability to geometrically tune the electrical transport between regimes dominated by either charge or spin correlations.

cond-mat.str-el↗

arXiv2014

Ferroelectricity in underdoped La-based cuprates

Doping a parent antiferromagnetic Mott insulator in cuprates leads to short-range electronic correlations and eventually to high-Tc superconductivity. However, the nature of charge correlations in the lightly doped cuprates remains unclear. Understanding the intermediate electronic phase in the phase diagram (between the parent insulator and the high-Tc superconductor) is expected to elucidate the complexity both inside and outside the superconducting dome, and in particular in the underdoped region. One such phase is ferroelectricity whose origin and relation to the properties of high-Tc superconductors is subject of current research. Here we demonstrate that ferroelectricity and the associated magnetoelectric coupling are in fact common in La-214 cuprates namely, La$_{2-x}$Sr$_x$CuO$_4$, La$_2$Li$_x$Cu$_{1-x}$O$_4$ and La$_2$CuO$_{4+x}$. It is proposed that ferroelectricity results from local CuO$_6$ octahedral distortions, associated with the dopant atoms and/or clustering of the doped charge carriers, which break spatial inversion symmetry at the local scale whereas magnetoelectric coupling can be tuned through Dzyaloshinskii-Moriya interaction.

cond-mat.supr-con↗

arXiv2014

Very high thermoelectric power factor in a Fe3O4/SiO2/p-type Si(100)heterostructure

The thermoelectric and transport properties of a Fe3O4/SiO2/p-Si(100) heterostructure have been investigated between 100 and 300 K. Both Hall and Seebeck coefficients change sign from negative to positive with increasing temperature while the resistivity drops sharply due to tunneling of carriers into the p-Si(100). The low resistivity and large Seebeck coefficient of Si give a very high thermoelectric power factor of 25.5mW/K2m at 260K which is an underestimated, lower limit value and is related to the density of states and difference in the work functions of Fe3O4 and Si(100) that create an accumulation of majority holes at the p-Si/SiO2 interface

cond-mat.mtrl-sci↗

arXiv2014

Current transport and thermoelectric properties of very high power factor Fe3O4 / SiO2 / p-type Si (001) devices

The current transport and thermoelectric properties of Fe3O4 / SiO2 / p-type Si(001) heterostructures with Fe3O4 thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300 K. We observe a sharp drop of the in-plane resistivity at 200K due to the onset of conduction along the Si / SiO2 interface related to tunneling of electrons from the Fe3O4 into the accumulation layer of holes at the Si / SiO2 interface, whose existence was confirmed by capacitance-voltage measurements and a two band analysis of the Hall effect. This is accompanied by a large increase of the Seebeck coefficient reaching +1000 μV/K at 300K that is related to holes in the p-type Si(001) and gives a power factor of 70 mW/K2m when the Fe3O4 layer thickness is reduced down to 150 nm. We show that most of the current flows in the Fe3O4 layer at 300 K, while the Fe3O4 / SiO2 / p-type Si(001) heterostructures behave like tunneling p-n junctions in the transverse direction.

cond-mat.mtrl-sci↗

arXiv2012

Tunable ferroelectricity in artificial tri-layer superlattices comprised of non-ferroic components

Heterostructured material systems devoid of ferroic components are presumed not to display ordering associated with ferroelectricity. In heterostructures composed of transition metal oxides, however, the disruption introduced by an interface can affect the balance of the competing interactions among electronic spins, charges and orbitals. This has led to the emergence of properties absent in the original building blocks of a heterostructure, including metallicity, magnetism and superconductivity. Here we report the discovery of ferroelectricity in artificial tri-layer superlattices consisting solely of non-ferroelectric NdMnO3/SrMnO3/LaMnO3 layers. Ferroelectricity was observed below 40 K exhibiting strong tunability by superlattice periodicity. Furthermore, magnetoelectric coupling resulted in 150% magnetic modulation of the polarization. Density functional calculations indicate that broken space inversion symmetry and mixed valency, because of cationic asymmetry and interfacial polar discontinuity, respectively, give rise to the observed behavior. Our results demonstrate the engineering of asymmetric layered structures with emergent ferroelectric and magnetic field tunable functions distinct from that of normal devices, for which the components are typically ferroelectrics.

cond-mat.str-el↗

arXiv2012

Low-temperature ferroelectric phase and magnetoelectric coupling in the underdoped La_2CuO_(4+x)

We report the discovery of a ferroelectric ground state below 4.5 K in highly underdoped La_2CuO_(4+x) accompanied by slow charge dynamics which develop below T~40 K. An anisotropic magnetoelectric response has also been observed, indicating considerable spin-charge coupling in this lightly doped "parent" high temperature copper-oxide superconductor. The ferroelectric state is proposed to develop from polar nanoregions, in which spatial inversion symmetry is locally broken due to non-stoichiometric carrier doping.

cond-mat.supr-con↗

arXiv2012

Bi-quadratic magnetoelectric coupling in underdoped La_2CuO_{4+x}

The recent discovery of relaxor ferroelectricity and magnetoelectric effect in lightly doped cuprate material La_2CuO_{4+x} has provided a number of questions concerning its theoretical description. It has been argued using a Ginzburg-Landau free energy approach that the magnetoelectric effect can be explained by the presence of bi-quadratic interaction terms in the free energy. Here, by using the same free energy functional, we study the variety of behavior which can emerge in the electric polarization under an external magnetic field. Subsequently, we discuss the role of Dzyaloshinskii-Moriya interaction in generating this magnetoelectric response. This work is particularly relevant for such relaxor systems where the material-dependent parameters would be affected by changes in e.g. chemical doping or cooling rate.

cond-mat.supr-con↗

arXiv2012

Evidence for filamentary superconductivity nucleated at antiphase domain walls in antiferromagnetic CaFe$_2$As$_2$

Resistivity, magnetization and microscopic $^{75}$As nuclear magnetic resonance (NMR) measurements in the antiferromagnetically ordered state of the iron-based superconductor parent material CaFe$_2$As$_2$ exhibit anomalous features that are consistent with the collective freezing of domain walls. Below $T^*\approx 10$ K, the resistivity exhibits a peak and downturn, the bulk magnetization exhibits a sharp increase, and $^{75}$As NMR measurements reveal the presence of slow fluctuations of the hyperfine field. These features in both the charge and spin response are strongly field dependent, are fully suppressed by $H^*\approx 15$ T, and suggest the presence of filamentary superconductivity nucleated at the antiphase domain walls in this material.

cond-mat.supr-con↗

arXiv2011

Theory of the magnetoeletric effect in a lightly doped high-Tc cuprate

In a recent study Viskadourakis et al. discovered that extremely underdoped La_2CuO_(4+x) is a relaxor ferroelectric and a magnetoelectric material at low temperatures. It is further observed that the magnetoelectric response is anisotropic for different directions of electric polarization and applied magnetic field. By constructing an appropriate Landau theory, we show that a bi-quadratic magnetoelectric coupling can explain the experimentally observed polarization dependence on magnetic field. This coupling leads to several novel low-temperature effects including a feedback enhancement of the magnetization below the ferroelectric transition, and a predicted magnetocapacitive effect.

cond-mat.supr-con↗

arXiv2005

Surface and interface study of pulsed-laser-deposited off-stoichiometric NiMnSb thin films on Si(100) substrate

We report a detailed study of surface and interface properties of pulsed-laser deposited NiMnSb films on Si (100) substrate as a function of film thickness. As the thickness of films is reduced below 35 nm formation of a porous layer is observed. Porosity in this layer increases with decrease in NiMnSb film thickness. These morphological changes of the ultra thin films are reflected in the interesting transport and magnetic properties of these films. On the other hand, there are no influences of compositional in-homogeneity and surface/interface roughness on the magnetic and transport properties of the films.

cond-mat.mtrl-sci↗

arXiv2005

Negative Giant Longitudinal Magnetoresistance in NiMnSb/InSb: An interface effect

We report on the electrical and magneto-transport properties of the contact formed between polycrystalline NiMnSb thin films grown using pulsed laser deposition (PLD) and n-type degenerate InSb (100) substrates. A negative giant magnetoresistance (GMR) effect is observed when the external magnetic field is parallel to the surface of the film and to the current direction. We attribute the observed phenomenon to magnetic precipitates formed during the magnetic film deposition and confined to a narrow layer at the interface. The effect of these precipitates on the magnetoresistance depends on the thermal processing of the system.

cond-mat.mtrl-sci↗

arXiv2003

Magnetoresistance and percolation in the LaNi(1-x)Co(x)O3 solid solution

A detailed study of the zero-field electrical resistivity and magnetoresistance for the metallic members of the LaNi_{1-x}Co{x}O3 solid solution with 0.3<=x<=0.6 is reported. The low temperature resistivity of the compounds with 0.3<=x<=0.5 exhibits a logarithmic dependence that is characteristic of systems with spin fluctuations. It is suggested that the effect of the magnetic field dependence on the spin fluctuations plays a vital role in determining the magnetoresistive behavior of these compounds. Concrete experimental evidence that classify the chemically induced metal-to-insulator transition (x_{c}=0.65) as a percolative phenomenon is provided. The resistivity data for the x=0.6 metallic compound are analyzed in the framework of cluster percolation threshold theory. The results of this analysis are consistent with the suggestion that the growth of magnetic metallic clusters in the presence of a magnetic field is mainly responsible for the observed giant magnetoresistance effect at low temperatures for the compounds with x>=0.6.

cond-mat.mtrl-sci↗

arXiv2002

A comparative study of the magnetic and magnetotransport properties between a metallic (x=0.6) and a semiconducting (x=0.2) member of the solid solution LaNixCo1-xO3

We present a comparative study of both the magnetic and magnetotransport properties for two members of the perovskite solid solution LaNixCo1-xO3 (x=0.2, 0.6) located on opposite sides of the chemically induced metal-to-insulator transition. LaNi0.6Co0.4O3 exhibits metallic behavior and small but negative magnetoresistance, whereas LaNi0.2Co0.8O3 exhibits semiconducting behavior and giant negative magnetoresistance at low temperatures. On the other hand, we observe pronounced similarities in the magnetic properties of both compounds. A consistent explanation regarding the origin of the magnetoresistance in the two members of the solid solution is provided.

cond-mat.mtrl-sci↗