arXiv subjects

Zahra Pedramrazi

Publications and source records attributed to Zahra Pedramrazi.

12 recordsLinked to original sources

arXiv2026

Contactless cavity sensing of superfluid stiffness in atomically thin 4Hb-TaS$_2$

The exceptional tunability of two-dimensional van der Waals materials offers unique opportunities for exploring novel superconducting phases. However, in such systems, the measurement of superfluid phase stiffness, a fundamental property of a superconductor, is challenging because of the mesoscopic sample size. Here, we introduce a contact-free technique for probing the electrodynamic response, and thereby the phase stiffness, of atomically thin superconductors using on-chip superconducting microwave resonators. We demonstrate this technique on 4Hb-TaS$_2$, a van der Waals superconductor whose gap structure under broken mirror symmetry is under debate. In our cleanest few-layer device, we observe a superconducting critical temperature comparable to that of the bulk. The temperature evolution of the phase stiffness features nodeless behavior in the presence of broken mirror symmetry, inconsistent with the scenario of nodal surface superconductivity. With minimal fabrication requirements, our technique enables microwave measurements across wide ranges of two-dimensional superconductors.

cond-mat.supr-con↗

arXiv2025

Tunable Superconducting Quantum Interference Device Coupler for Fluxonium Qubits

Tunable couplers enable high-fidelity two-qubit gates leveraging high on/off coupling ratios and reduced crosstalk within a single design. We investigate a galvanically connected direct-current superconducting quantum interference device (dc SQUID) as a minimal tunable coupling element for fluxonium qubits. Comparing grounded and floating fluxonium designs, we find that the latter contains an extra sloshing mode that strongly hybridizes with the qubit modes, leading to significant static ZZ crosstalk. In contrast, the grounded design avoids this issue and allows suppression of static ZZ crosstalk using a shunting capacitor. Leveraging fast flux control, we present two schemes to implement two-qubit gates, predicting a $\sqrt{i\text{SWAP}}$-like gate with $99.9\%$ open-system fidelity in less than 6 nanoseconds assuming modest relaxation and dephasing rates.

quant-ph↗

arXiv2025

Quantum Benchmarking of High-Fidelity Noise-Biased Operations on a Detuned-Kerr-Cat Qubit

Ubiquitous noises in quantum systems remain a key obstacle to building quantum computers, necessitating the use of quantum error correction codes. Recently, error-correcting codes tailored for noise-biased systems have been shown to offer high fault-tolerance thresholds and reduced hardware overhead, positioning noise-biased qubits as promising candidates for building universal quantum computers. However, quantum operations on these platforms remain challenging, and their noise structures have not yet been rigorously benchmarked to the same extent as those of conventional quantum hardware. In this work, we develop a comprehensive quantum control toolbox for a scalable noise-biased qubit, detuned Kerr-cat qubit, including initialization, universal single-qubit gates and quantum non-demolition readout. We systematically characterize the noise structure of these operations using gate set tomography and dihedral randomized benchmarking, achieving high local gate fidelities, with $\mathcal{F}[Z(π/2)]=99.2\%$ and $\mathcal{F}[X(π/2)]=92.5\%$. Notably, the noise bias of the detuned Kerr-cat qubit approaches 250, which outperforms its resonant-Kerr-cat qubit counterparts as reported previously, representing a new state-of-the-art performance benchmark for noise-biased qubits. Moreover, our results reveal a critical overestimation of operational noise bias inferred from bit-flip and phase-flip times alone, highlighting the necessity of a precise and direct benchmarking for noise-biased qubit operations. Our work thus establishes a framework for systematically characterizing and validating the performance of quantum operations in structured-noise architectures, which lays the groundwork for implementing efficient quantum error correction in next-generation architectures.

quant-ph↗

arXiv2024

High-Coherence Kerr-cat qubit in 2D architecture

The Kerr-cat qubit is a bosonic qubit in which multi-photon Schrodinger cat states are stabilized by applying a two-photon drive to an oscillator with a Kerr nonlinearity. The suppressed bit-flip rate with increasing cat size makes this qubit a promising candidate to implement quantum error correction codes tailored for noise-biased qubits. However, achieving strong light-matter interactions necessary for stabilizing and controlling this qubit has traditionally required strong microwave drives that heat the qubit and degrade its performance. In contrast, increasing the coupling to the drive port removes the need for strong drives at the expense of large Purcell decay. By integrating an effective band-block filter on-chip, we overcome this trade-off and realize a Kerr-cat qubit in a scalable 2D superconducting circuit with high coherence. This filter provides 30 dB of isolation at the qubit frequency with negligible attenuation at the frequencies required for stabilization and readout. We experimentally demonstrate quantum non-demolition readout fidelity of 99.6% for a cat with 8 photons. Also, to have high-fidelity universal control over this qubit, we combine fast Rabi oscillations with a new demonstration of the X(90) gate through phase modulation of the stabilization drive. Finally, the lifetime in this architecture is examined as a function of the cat size of up to 10 photons in the oscillator achieving a bit-flip time higher than 1 ms and only a linear decrease in the phase-flip time, in good agreement with the theoretical analysis of the circuit. Our qubit shows promise as a building block for fault-tolerant quantum processors with a small footprint.

quant-ph↗

arXiv2023

Broadband CPW-based impedance-transformed Josephson parametric amplifier

Quantum-limited Josephson parametric amplifiers play a pivotal role in advancing the field of circuit quantum electrodynamics by enabling the fast and high-fidelity measurement of weak microwave signals. Therefore, it is necessary to develop robust parametric amplifiers with low noise, broad bandwidth, and reduced design complexity for microwave detection. However, current broadband parametric amplifiers either have degraded noise performance or rely on complex designs. Here, we present a device based on the broadband impedance-transformed Josephson parametric amplifier (IMPA) that integrates a horn-like coplanar waveguide (CPW) transmission line, which significantly decreases the design and fabrication complexity, while keeping comparable performance. The device shows an instantaneous bandwidth of 700(200) MHz for 15(20) dB gain with an average saturation power of -110 dBm and near quantum-limited added noise. The operating frequency can be tuned over 1.4 GHz using an external flux bias. We further demonstrate the negligible back-action from our device on a transmon qubit. The amplification performance and simplicity of our device promise its wide adaptation in quantum metrology, quantum communication, and quantum information processing.

quant-ph↗

arXiv2022

Scalable High-Performance Fluxonium Quantum Processor

The technological development of hardware heading toward universal fault-tolerant quantum computation requires a large-scale processing unit with high performance. While fluxonium qubits are promising with high coherence and large anharmonicity, their scalability has not been systematically explored. In this work, we propose a superconducting quantum information processor based on compact high-coherence fluxoniums with suppressed crosstalk, reduced design complexity, improved operational efficiency, high-fidelity gates, and resistance to parameter fluctuations. In this architecture, the qubits are readout dispersively using individual resonators connected to a common bus and manipulated via combined on-chip RF and DC control lines, both of which can be designed to have low crosstalk. A multi-path coupling approach enables exchange interactions between the high-coherence computational states and at the same time suppresses the spurious static ZZ rate, leading to fast and high-fidelity entangling gates. We numerically investigate the cross resonance controlled-NOT and the differential AC-Stark controlled-Z operations, revealing low gate error for qubit-qubit detuning bandwidth of up to 1 GHz. Our study on frequency crowding indicates high fabrication yield for quantum processors consisting of over thousands of qubits. In addition, we estimate low resource overhead to suppress logical error rate using the XZZX surface code. These results promise a scalable quantum architecture with high performance for the pursuit of universal quantum computation.

quant-ph↗

arXiv2020

Non-Covalent Dimerization after Enediyne Cyclization on Au(111)

We investigate the thermally-induced cyclization of 1,2 - bis(2 - phenylethynyl)benzene on Au(111) using scanning tunneling microscopy and computer simulations. Cyclization of sterically hindered enediynes is known to proceed via two competing mechanisms in solution: a classic C1 - C6 or a C1 - C5 cyclization pathway. On Au(111) we find that the C1 - C5 cyclization is suppressed and that the C1 - C6 cyclization yields a highly strained bicyclic olefin whose surface chemistry was hitherto unknown. The C1 - C6 product self-assembles into discrete non-covalently bound dimers on the surface. The reaction mechanism and driving forces behind non-covalent association are discussed in light of density functional theory calculations.

cond-mat.mtrl-sci↗

arXiv2018

Observation of Topologically Protected States at Crystalline Phase Boundaries in Single-layer WSe2

Transition metal dichalcogenide (TMD) materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional (2D) single-layer limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase boundaries in a new quantum spin Hall insulator (QSHI), 1T'-WSe2. We observe helical states at the crystallographically-aligned interface between quantum a spin Hall insulating domain of 1T'-WSe2 and a semiconducting domain of 1H-WSe2 in contiguous single layers grown using molecular beam epitaxy (MBE). The QSHI nature of single-layer 1T'-WSe2 was verified using ARPES to determine band inversion around a 120 meV energy gap, as well as STM spectroscopy to directly image helical edge-state formation. Using this new edge-state geometry we are able to directly confirm the predicted penetration depth of a helical interface state into the 2D bulk of a QSHI for a well-specified crystallographic direction. The clean, well-ordered topological/trivial interfaces observed here create new opportunities for testing predictions of the microscopic behavior of topologically protected boundary states without the complication of structural disorder.

cond-mat.mtrl-sci↗

arXiv2017

Realization of Quantum Spin Hall State in Monolayer 1T'-WTe2

A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin-orbit coupling. By investigating electronic structure of epitaxially grown monolayer 1T'-WTe2 using angle-resolved photoemission (ARPES) and first principle calculations, we observe clear signatures of the topological band inversion and the band gap opening, which are the hallmarks of a QSH state. Scanning tunneling microscopy measurements further confirm the correct crystal structure and the existence of a bulk band gap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Our results establish monolayer 1T'-WTe2 as a new class of QSH insulator with large band gap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs).

cond-mat.mtrl-sci↗

arXiv2017

Short-Channel Field Effect Transistors with 9-Atom and 13-Atom wide Graphene Nanoribbons

Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap of these GNRs have prevented the fabrication of devices with the desired performance and switching behaviour. Here, by fabricating short channel (Lch ~20 nm) devices with a thin, high-k gate dielectric and a 9-atom wide (0.95 nm) armchair GNR as the channel material, we demonstrate FETs with high on-current (Ion >1 uA at Vd = -1 V) and high Ion/Ioff ~10^5 at room temperature. We find that the performance of these devices is limited by tunnelling through the Schottky barrier (SB) at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high performance short-channel FETs with bottom-up synthesized armchair GNRs.

cond-mat.mes-hall↗

arXiv2013

Bottom-up Graphene Nanoribbon Field-Effect Transistors

Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nanoscale chemically synthesized GNR field-effect transistors, made possible by development of a new layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1nm width GNRs.

cond-mat.mtrl-sci↗

arXiv2013

Experimentally Engineering the Edge Termination of Graphene Nanoribbons

The edges of graphene nanoribbons (GNRs) have attracted much interest due to their potentially strong influence on GNR electronic and magnetic properties. Here we report the ability to engineer the microscopic edge termination of high quality GNRs via hydrogen plasma etching. Using a combination of high-resolution scanning tunneling microscopy and first-principles calculations, we have determined the exact atomic structure of plasma-etched GNR edges and established the chemical nature of terminating functional groups for zigzag, armchair and chiral edge orientations. We find that the edges of hydrogen-plasma-etched GNRs are generally flat, free of structural reconstructions and are terminated by hydrogen atoms with no rehybridization of the outermost carbon edge atoms. Both zigzag and chiral edges show the presence of edge states.

cond-mat.mes-hall↗