Bottom-up Graphene Nanoribbon Field-Effect Transistors

Patrick B. Bennett; Zahra Pedramrazi; Ali Madani; Yen-Chia Chen; Dimas G. de Oteyza; Chen Chen; Felix R. Fischer; Michael F. Crommie; Jeffrey Bokor

doi:10.1063/1.4855116

arXiv · 1310.0495

Bottom-up Graphene Nanoribbon Field-Effect Transistors

Patrick B. Bennett·Zahra Pedramrazi·Ali Madani·Yen-Chia Chen·Dimas G. de Oteyza·Chen Chen·Felix R. Fischer·Michael F. Crommie·Jeffrey Bokor

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Abstract

Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nanoscale chemically synthesized GNR field-effect transistors, made possible by development of a new layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1nm width GNRs.

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Patrick B. Bennett, Zahra Pedramrazi, Ali Madani, Yen-Chia Chen, Dimas G. de Oteyza, Chen Chen, Felix R. Fischer, Michael F. Crommie, Jeffrey Bokor. 2013-10-01. Bottom-up Graphene Nanoribbon Field-Effect Transistors. https://doi.org/10.1063/1.4855116

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